As the bridge between basic principles and applications of nanotechnology,nanofabrication methods play significant role in supporting the development of nanoscale science and engineering,which is changing and improvin...As the bridge between basic principles and applications of nanotechnology,nanofabrication methods play significant role in supporting the development of nanoscale science and engineering,which is changing and improving the production and lifestyle of the human.Photo lithography and other alternative technologies,such as nanoimprinting,electron beam lithography,focused ion beam cutting,and scanning probe lithography,have brought great progress of semiconductor industry,IC manufacturing and micro/nanoelectromechanical system(MEMS/NEMS)devices.However,there remains a lot of challenges,relating to the resolution,cost,speed,and so on,in realizing high-quality products with further development of nanotechnology.None of the existing techniques can satisfy all the needs in nanoscience and nanotechnology at the same time,and it is essential to explore new nanofabrication methods.As a newly developed scanning probe microscope(SPM)-based lithography,friction-induced nanofabrication provides opportunities for maskless,flexible,low-damage,low-cost and environment-friendly processing on a wide variety of materials,including silicon,quartz,glass surfaces,and so on.It has been proved that this fabrication route provides with a broad application prospect in the fabrication of nanoimprint templates,microfluidic devices,and micro/nano optical structures.This paper hereby involved the principals and operations of friction-induced nanofabrication,including friction-induced selective etching,and the applications were reviewed as well for looking ahead at opportunities and challenges with nanotechnology development.The present review will not only enrich the knowledge in nanotribology,but also plays a positive role in promoting SPM-based nanofabrication.展开更多
There is an urgent need for novel processes that can integrate different functional nanostructures onto specific substrates,so as to meet the fast-growing need for broad applications in nanoelectronics,nanophotonics,a...There is an urgent need for novel processes that can integrate different functional nanostructures onto specific substrates,so as to meet the fast-growing need for broad applications in nanoelectronics,nanophotonics,and fexible optoelectronics.Existing direct-lithography methods are difficult to use on fexible,nonplanar,and biocompatible surfaces.Therefore,this fabrication is usually accomplished by nanotransfer printing.However,large-scale integration of multiscale nanostructures with unconventional substrates remains challenging because fabrication yields and quality are often limited by the resolution,uniformity,adhesivity,and integrity of the nanostructures formed by direct transfer.Here,we proposed a resist-based transfer strategy enabled by near-zero adhesion,which was achieved by molecular modification to attain a critical surface energy interval.This approach enabled the intact transfer of wafer-scale,ultrathin-resist nanofilms onto arbitrary substrates with mitigated cracking and wrinkling,thereby facilitating the in situ fabrication of nanostructures for functional devices.Applying this approach,fabrication of three-dimensional-stacked multilayer structures with enhanced functionalities,nanoplasmonic structures with~10 nm resolution,and MoS2-based devices with excellent performance was demonstrated on specific substrates.These results collectively demonstrated the high stability,reliability,and throughput of our strategy for optical and electronic device applications.展开更多
Nanoimprint lithography(NIL) is an emerging micro/nano-patterning technique,which is a high-resolution,high-throughput and yet simple fabrication process.According to International Technology Roadmap for Semiconductor...Nanoimprint lithography(NIL) is an emerging micro/nano-patterning technique,which is a high-resolution,high-throughput and yet simple fabrication process.According to International Technology Roadmap for Semiconductor(ITRS),NIL has emerged as the next generation lithography candidate for the22 nm and 16 nm technological nodes.In this paper,we present an overview of nanoimprint lithography.The classfication,research focus,critical issues,and the future of nanoimprint lithography are intensively elaborated.A pattern as small as 2.4 nm has been demonstrated.Full-wafer nanoimprint lithography has been completed on a 12-inch wafer.Recently,12.5 nm pattern resolution through soft molecular scale nanoimprint lithography has been achieved by EV Group,a leading nanoimprint lithography technology supplier.展开更多
Helium ion beam(HIB)technology plays an important role in the extreme fields of nanofabrication.This paper reviews the latest developments in HIB technology as well as its extreme processing capabilities and widesprea...Helium ion beam(HIB)technology plays an important role in the extreme fields of nanofabrication.This paper reviews the latest developments in HIB technology as well as its extreme processing capabilities and widespread applications in nanofabrication.HIB-based nanofabrication includes direct-write milling,ion beam-induced deposition,and direct-write lithography without resist assistance.HIB nanoscale applications have also been evaluated in the areas of integrated circuits,materials sciences,nano-optics,and biological sciences.This review covers four thematic applications of HIB:(1)helium ion microscopy imaging for biological samples and semiconductors;(2)HIB milling and swelling for 2D/3D nanopore fabrication;(3)HIB-induced deposition for nanopillars,nanowires,and 3D nanostructures;(4)additional HIB direct writing for resist,graphene,and plasmonic nanostructures.This paper concludes with a summary of potential future applications and areas of improvement for HIB extreme nanofabrication technology.展开更多
At present, the most common micro/nano-scale fabri ca tion processes include the plane silicon process based on IC technology, stereo silicon process, LIGA, quasi-LIGA based on near ultra violet deep lithography, MEMS...At present, the most common micro/nano-scale fabri ca tion processes include the plane silicon process based on IC technology, stereo silicon process, LIGA, quasi-LIGA based on near ultra violet deep lithography, MEMS, energy beam etching and micro/nano-machining, etc. A common problem for t hese processes is the difficulty to fabricate arbitrary form for 3-dimensional micro/nano-parts, devices or mechanisms. To develop advanced MEMS manufacturin g technology, and to achieve fabrication of true 3-dimensional parts, devices or mechanisms, this paper proposes a nanofabrication technology for rapid proto typing of 3-dimensional parts, using plasma chemical vapor deposition (PCVD). This process can be describes as follows: A laser beam is produced by a low power, quasi molecule laser. It enters the vac uum chamber through a window, and is focused on with the substrate surface. A ga s in the chamber is ionized by the laser beam to produce PCVD on the substrate s urface, and forms a particle of the size of Ф100 nm (its thickness is about 100 nm). When the laser beam moves along X-axis, many particles form a line. Then the laser beam moves one step in Y-axis to form a new line. A plane is complete d by many lines. Then the substrate moves in Z-axis to form new plane. Eventu ally, many planes form a 3-dimensional component. Using available CAD/CAM softw are with this process, rapid prototyping of complex components can be achieved. A nanometer precision linear motor, such as that described in Chinese national p atent (patent No. ZL 98 2 16753.9), can be used to obtain the nanometer precisio n movements in the process. The process does not require mask, can be used for v arious rapid prototyping materials, to obtain high fabrication precision (its sc ale precision is 15 nm), and larger ratio of height to width of micro/nano-stru cture. It can find widespread applications in the fabrication of micro-mechani sm, trimming IC, and fabricating minilens, etc.展开更多
Nanofabrication of two-dimensional materials through mechanical machining is normally influenced by not only process parameters such as load and velocity but also intrinsic properties such as strength and thickness.He...Nanofabrication of two-dimensional materials through mechanical machining is normally influenced by not only process parameters such as load and velocity but also intrinsic properties such as strength and thickness.Herein,we examined the effects of graphene oxide(GO)film thickness on nanofabrication on the plane surfaces and at the step edges using scanning probe microscope lithography.The material removal of GO initiates at the load above a critical value,which strongly depends on film thickness and locations.With the increase in film thickness,the critical load decreases monotonically on the plane surfaces but increases gradually at the step edges.Further,the critical load for the GO monolayer at the step edges is at least 25 times lower than that on the plane surfaces,and the gap decreases to around 3 times when GO thickness increases to four layers.Then,mechanical nanofabrication initiating from the GO step edge allows producing various nanopatterns under extremely low loads around 1 nN.Finally,the GO nanostructures are deoxidized by annealing at 800°C in high-purity argon to restore their highly functionalized conjugated structures,which are supported by X-ray diffraction and Raman characterizations.This work provides a novel approach to fabricating graphene-like nanostructures by deoxidizing GO after nanofabrication,which holds significant potential for applications in graphene-based devices.展开更多
In the past decade,there has been tremendous progress in integrating chalcogenide phase-change materials(PCMs)on the silicon photonic platform for non-volatile memory to neuromorphic in-memory computing applications.I...In the past decade,there has been tremendous progress in integrating chalcogenide phase-change materials(PCMs)on the silicon photonic platform for non-volatile memory to neuromorphic in-memory computing applications.In particular,these non von Neumann computational elements and systems benefit from mass manufacturing of silicon photonic integrated circuits(PICs)on 8-inch wafers using a 130 nm complementary metal-oxide semiconductor line.Chip manufacturing based on deep-ultraviolet lithography and electron-beam lithography enables rapid prototyping of PICs,which can be integrated with high-quality PCMs based on the wafer-scale sputtering technique as a back-end-of-line process.In this article,we present an overview of recent advances in waveguide integrated PCM memory cells,functional devices,and neuromorphic systems,with an emphasis on fabrication and integration processes to attain state-of-the-art device performance.After a short overview of PCM based photonic devices,we discuss the materials properties of the functional layer as well as the progress on the light guiding layer,namely,the silicon and germanium waveguide platforms.Next,we discuss the cleanroom fabrication flow of waveguide devices integrated with thin films and nanowires,silicon waveguides and plasmonic microheaters for the electrothermal switching of PCMs and mixed-mode operation.Finally,the fabrication of photonic and photonic–electronic neuromorphic computing systems is reviewed.These systems consist of arrays of PCM memory elements for associative learning,matrix-vector multiplication,and pattern recognition.With large-scale integration,the neuromorphic photonic computing paradigm holds the promise to outperform digital electronic accelerators by taking the advantages of ultra-high bandwidth,high speed,and energy-efficient operation in running machine learning algorithms.展开更多
For years,friction-induced vibration and noise(FIVN)has puzzled many researchers in academia and industry.Several mechanisms have been proposed for explaining its occurrence and quantifying its frequencies,notably for...For years,friction-induced vibration and noise(FIVN)has puzzled many researchers in academia and industry.Several mechanisms have been proposed for explaining its occurrence and quantifying its frequencies,notably for automotive brake squeal,clutch squeal,and even rail corrugation.However,due to the complex and complicated nature of FIVN,there is not yet one fundamental mechanism that can explain all phenomena of FIVN.Based on experimental results obtained on a simple test structure and corresponding numerical validation using both complex eigenvalue analysis(CEA)and transient dynamic analysis(TDA),this study attempts to propose a new fundamental mechanism for FIVN,which is the repeated cycles of partial detachment and then reattachment of the contact surfaces.Since friction is ubiquitous and FIVN is very common,the insight into FIVN reported in this paper is highly significant and will help establish effective means to control FIVN in engineering and daily life.展开更多
In this study,Ag/γ-Al_(2)O_(3)catalysts were synthesized by an Ar dielectric barrier discharge plasma using silver nitrate as the Ag source andγ-alumina(γ-Al_(2)O_(3))as the support.It is revealed that plasma can r...In this study,Ag/γ-Al_(2)O_(3)catalysts were synthesized by an Ar dielectric barrier discharge plasma using silver nitrate as the Ag source andγ-alumina(γ-Al_(2)O_(3))as the support.It is revealed that plasma can reduce silver ions to generate crystalline silver nanoparticles(Ag NPs)of good dispersion and uniformity on the alumina surface,leading to the formation of Ag/γ-Al_(2)O_(3)catalysts in a green manner without traditional chemical reductants.Ag/γ-Al_(2)O_(3)exhibited good catalytic activity and stability in CO oxidation reactions,and the activity increased with increase in the Ag content.For catalysts with more than 2 wt%Ag,100%CO conversion can be achieved at 300°C.The catalytic activity of the Ag/γ-Al_(2)O_(3)catalysts is also closely related to the size of theγ-alumina,where Ag/nano-γ-Al_(2)O_(3)catalysts demonstrate better performance than Ag/micro-γ-Al_(2)O_(3)catalysts with the same Ag content.In addition,the catalytic properties of plasma-generated Ag/nano-γ-Al_(2)O_(3)(Ag/γ-Al_(2)O_(3)-P)catalysts were compared with those of Ag/nano-γ-Al_(2)O_(3)catalysts prepared by the traditional calcination approach(Ag/γ-Al_(2)O_(3)-C),with the plasma-generated samples demonstrating better overall performance.This simple,rapid and green plasma process is considered to be applicable for the synthesis of diverse noble metal-based catalysts.展开更多
基金Supported by National Natural Science Foundation of China(Grant Nos.51775462,51991373).
文摘As the bridge between basic principles and applications of nanotechnology,nanofabrication methods play significant role in supporting the development of nanoscale science and engineering,which is changing and improving the production and lifestyle of the human.Photo lithography and other alternative technologies,such as nanoimprinting,electron beam lithography,focused ion beam cutting,and scanning probe lithography,have brought great progress of semiconductor industry,IC manufacturing and micro/nanoelectromechanical system(MEMS/NEMS)devices.However,there remains a lot of challenges,relating to the resolution,cost,speed,and so on,in realizing high-quality products with further development of nanotechnology.None of the existing techniques can satisfy all the needs in nanoscience and nanotechnology at the same time,and it is essential to explore new nanofabrication methods.As a newly developed scanning probe microscope(SPM)-based lithography,friction-induced nanofabrication provides opportunities for maskless,flexible,low-damage,low-cost and environment-friendly processing on a wide variety of materials,including silicon,quartz,glass surfaces,and so on.It has been proved that this fabrication route provides with a broad application prospect in the fabrication of nanoimprint templates,microfluidic devices,and micro/nano optical structures.This paper hereby involved the principals and operations of friction-induced nanofabrication,including friction-induced selective etching,and the applications were reviewed as well for looking ahead at opportunities and challenges with nanotechnology development.The present review will not only enrich the knowledge in nanotribology,but also plays a positive role in promoting SPM-based nanofabrication.
基金supported by the National Key Research and Development Program of China(No.2022YFB4602600)the National Natural Science Foundation of China(No.52221001)Hunan Provincial Innovation Foundation for Postgraduate(No.CX20220406)。
文摘There is an urgent need for novel processes that can integrate different functional nanostructures onto specific substrates,so as to meet the fast-growing need for broad applications in nanoelectronics,nanophotonics,and fexible optoelectronics.Existing direct-lithography methods are difficult to use on fexible,nonplanar,and biocompatible surfaces.Therefore,this fabrication is usually accomplished by nanotransfer printing.However,large-scale integration of multiscale nanostructures with unconventional substrates remains challenging because fabrication yields and quality are often limited by the resolution,uniformity,adhesivity,and integrity of the nanostructures formed by direct transfer.Here,we proposed a resist-based transfer strategy enabled by near-zero adhesion,which was achieved by molecular modification to attain a critical surface energy interval.This approach enabled the intact transfer of wafer-scale,ultrathin-resist nanofilms onto arbitrary substrates with mitigated cracking and wrinkling,thereby facilitating the in situ fabrication of nanostructures for functional devices.Applying this approach,fabrication of three-dimensional-stacked multilayer structures with enhanced functionalities,nanoplasmonic structures with~10 nm resolution,and MoS2-based devices with excellent performance was demonstrated on specific substrates.These results collectively demonstrated the high stability,reliability,and throughput of our strategy for optical and electronic device applications.
基金supported by Natural Science Foundation of Shanghai(No.11ZR1432100)Shanghai Postdoctoral Science Foundation(11R21420900)
文摘Nanoimprint lithography(NIL) is an emerging micro/nano-patterning technique,which is a high-resolution,high-throughput and yet simple fabrication process.According to International Technology Roadmap for Semiconductor(ITRS),NIL has emerged as the next generation lithography candidate for the22 nm and 16 nm technological nodes.In this paper,we present an overview of nanoimprint lithography.The classfication,research focus,critical issues,and the future of nanoimprint lithography are intensively elaborated.A pattern as small as 2.4 nm has been demonstrated.Full-wafer nanoimprint lithography has been completed on a 12-inch wafer.Recently,12.5 nm pattern resolution through soft molecular scale nanoimprint lithography has been achieved by EV Group,a leading nanoimprint lithography technology supplier.
基金supported by research funding from Natural Science Foundation of Chongqing,China(Grant No.cstc2018jcyjAX0310,cstc2017jcyjB0105,cstc2018jcyjAX0304)National Natural Science Foundation of China(Grant Nos.61701474,31800711)+1 种基金Instrument development program of CAS(YZ201568)Pioneer Hundred Talents Program of CAS(Liang Wang)and Youth Innovation Promotion Association of the Chinese Academy of Sciences(2017392).
文摘Helium ion beam(HIB)technology plays an important role in the extreme fields of nanofabrication.This paper reviews the latest developments in HIB technology as well as its extreme processing capabilities and widespread applications in nanofabrication.HIB-based nanofabrication includes direct-write milling,ion beam-induced deposition,and direct-write lithography without resist assistance.HIB nanoscale applications have also been evaluated in the areas of integrated circuits,materials sciences,nano-optics,and biological sciences.This review covers four thematic applications of HIB:(1)helium ion microscopy imaging for biological samples and semiconductors;(2)HIB milling and swelling for 2D/3D nanopore fabrication;(3)HIB-induced deposition for nanopillars,nanowires,and 3D nanostructures;(4)additional HIB direct writing for resist,graphene,and plasmonic nanostructures.This paper concludes with a summary of potential future applications and areas of improvement for HIB extreme nanofabrication technology.
文摘At present, the most common micro/nano-scale fabri ca tion processes include the plane silicon process based on IC technology, stereo silicon process, LIGA, quasi-LIGA based on near ultra violet deep lithography, MEMS, energy beam etching and micro/nano-machining, etc. A common problem for t hese processes is the difficulty to fabricate arbitrary form for 3-dimensional micro/nano-parts, devices or mechanisms. To develop advanced MEMS manufacturin g technology, and to achieve fabrication of true 3-dimensional parts, devices or mechanisms, this paper proposes a nanofabrication technology for rapid proto typing of 3-dimensional parts, using plasma chemical vapor deposition (PCVD). This process can be describes as follows: A laser beam is produced by a low power, quasi molecule laser. It enters the vac uum chamber through a window, and is focused on with the substrate surface. A ga s in the chamber is ionized by the laser beam to produce PCVD on the substrate s urface, and forms a particle of the size of Ф100 nm (its thickness is about 100 nm). When the laser beam moves along X-axis, many particles form a line. Then the laser beam moves one step in Y-axis to form a new line. A plane is complete d by many lines. Then the substrate moves in Z-axis to form new plane. Eventu ally, many planes form a 3-dimensional component. Using available CAD/CAM softw are with this process, rapid prototyping of complex components can be achieved. A nanometer precision linear motor, such as that described in Chinese national p atent (patent No. ZL 98 2 16753.9), can be used to obtain the nanometer precisio n movements in the process. The process does not require mask, can be used for v arious rapid prototyping materials, to obtain high fabrication precision (its sc ale precision is 15 nm), and larger ratio of height to width of micro/nano-stru cture. It can find widespread applications in the fabrication of micro-mechani sm, trimming IC, and fabricating minilens, etc.
基金supported by the National Natural Science Foundation of China(Nos.52350411,52122507 and 52235004)Sichuan Science and Technology Program(2023NSFSC1988 and 2023YFSY0004)the Fundamental Research Funds for the Central University(No.2682021ZTPY095).
文摘Nanofabrication of two-dimensional materials through mechanical machining is normally influenced by not only process parameters such as load and velocity but also intrinsic properties such as strength and thickness.Herein,we examined the effects of graphene oxide(GO)film thickness on nanofabrication on the plane surfaces and at the step edges using scanning probe microscope lithography.The material removal of GO initiates at the load above a critical value,which strongly depends on film thickness and locations.With the increase in film thickness,the critical load decreases monotonically on the plane surfaces but increases gradually at the step edges.Further,the critical load for the GO monolayer at the step edges is at least 25 times lower than that on the plane surfaces,and the gap decreases to around 3 times when GO thickness increases to four layers.Then,mechanical nanofabrication initiating from the GO step edge allows producing various nanopatterns under extremely low loads around 1 nN.Finally,the GO nanostructures are deoxidized by annealing at 800°C in high-purity argon to restore their highly functionalized conjugated structures,which are supported by X-ray diffraction and Raman characterizations.This work provides a novel approach to fabricating graphene-like nanostructures by deoxidizing GO after nanofabrication,which holds significant potential for applications in graphene-based devices.
基金the support of the National Natural Science Foundation of China(Grant No.62204201)。
文摘In the past decade,there has been tremendous progress in integrating chalcogenide phase-change materials(PCMs)on the silicon photonic platform for non-volatile memory to neuromorphic in-memory computing applications.In particular,these non von Neumann computational elements and systems benefit from mass manufacturing of silicon photonic integrated circuits(PICs)on 8-inch wafers using a 130 nm complementary metal-oxide semiconductor line.Chip manufacturing based on deep-ultraviolet lithography and electron-beam lithography enables rapid prototyping of PICs,which can be integrated with high-quality PCMs based on the wafer-scale sputtering technique as a back-end-of-line process.In this article,we present an overview of recent advances in waveguide integrated PCM memory cells,functional devices,and neuromorphic systems,with an emphasis on fabrication and integration processes to attain state-of-the-art device performance.After a short overview of PCM based photonic devices,we discuss the materials properties of the functional layer as well as the progress on the light guiding layer,namely,the silicon and germanium waveguide platforms.Next,we discuss the cleanroom fabrication flow of waveguide devices integrated with thin films and nanowires,silicon waveguides and plasmonic microheaters for the electrothermal switching of PCMs and mixed-mode operation.Finally,the fabrication of photonic and photonic–electronic neuromorphic computing systems is reviewed.These systems consist of arrays of PCM memory elements for associative learning,matrix-vector multiplication,and pattern recognition.With large-scale integration,the neuromorphic photonic computing paradigm holds the promise to outperform digital electronic accelerators by taking the advantages of ultra-high bandwidth,high speed,and energy-efficient operation in running machine learning algorithms.
基金the National Natural Science Foundation of China(No.11672052)Natural Science Foundation of Zhejiang Province(LQ22E050012)are gratefully acknowledged.
文摘For years,friction-induced vibration and noise(FIVN)has puzzled many researchers in academia and industry.Several mechanisms have been proposed for explaining its occurrence and quantifying its frequencies,notably for automotive brake squeal,clutch squeal,and even rail corrugation.However,due to the complex and complicated nature of FIVN,there is not yet one fundamental mechanism that can explain all phenomena of FIVN.Based on experimental results obtained on a simple test structure and corresponding numerical validation using both complex eigenvalue analysis(CEA)and transient dynamic analysis(TDA),this study attempts to propose a new fundamental mechanism for FIVN,which is the repeated cycles of partial detachment and then reattachment of the contact surfaces.Since friction is ubiquitous and FIVN is very common,the insight into FIVN reported in this paper is highly significant and will help establish effective means to control FIVN in engineering and daily life.
基金financial support from National Natural Science Foundation of China(Nos.52004102 and 22078125)Postdoctoral Science Foundation of China(No.2021M690068)+2 种基金Fundamental Research Funds for the Central Universities(Nos.JUSRP221018 and JUSRP622038)Key Laboratory of Green Cleaning Technology and Detergent of Zhejiang Province(No.Q202204)Open Project of Key Laboratory of Green Chemical Engineering Process of Ministry of Education(No.GCP202112)。
文摘In this study,Ag/γ-Al_(2)O_(3)catalysts were synthesized by an Ar dielectric barrier discharge plasma using silver nitrate as the Ag source andγ-alumina(γ-Al_(2)O_(3))as the support.It is revealed that plasma can reduce silver ions to generate crystalline silver nanoparticles(Ag NPs)of good dispersion and uniformity on the alumina surface,leading to the formation of Ag/γ-Al_(2)O_(3)catalysts in a green manner without traditional chemical reductants.Ag/γ-Al_(2)O_(3)exhibited good catalytic activity and stability in CO oxidation reactions,and the activity increased with increase in the Ag content.For catalysts with more than 2 wt%Ag,100%CO conversion can be achieved at 300°C.The catalytic activity of the Ag/γ-Al_(2)O_(3)catalysts is also closely related to the size of theγ-alumina,where Ag/nano-γ-Al_(2)O_(3)catalysts demonstrate better performance than Ag/micro-γ-Al_(2)O_(3)catalysts with the same Ag content.In addition,the catalytic properties of plasma-generated Ag/nano-γ-Al_(2)O_(3)(Ag/γ-Al_(2)O_(3)-P)catalysts were compared with those of Ag/nano-γ-Al_(2)O_(3)catalysts prepared by the traditional calcination approach(Ag/γ-Al_(2)O_(3)-C),with the plasma-generated samples demonstrating better overall performance.This simple,rapid and green plasma process is considered to be applicable for the synthesis of diverse noble metal-based catalysts.
