We propose an ultrathin wide-band metamaterial absorber （MA） based on a Minkowski （MIK） fractal frequency selective surface and resistive film. This absorber consists of a periodic arrangement of dielectric substr...We propose an ultrathin wide-band metamaterial absorber （MA） based on a Minkowski （MIK） fractal frequency selective surface and resistive film. This absorber consists of a periodic arrangement of dielectric substrates sandwiched with an MIK fractal loop structure electric resonator and a resistive film. The finite element method is used to simulate and analyze the absorption of the MA. Compared with the MA-backed copper film, the designed MA-backed resistive film exhibits an absorption of 90% at a frequency region of 2 GHz-20 GHz. The power loss density distribution of the MA is further illustrated to explain the mechanism of the proposed MA. Simulated absorptions at different incidence cases indicate that this absorber is polarization-insensitive and wide-angled. Finally, further simulated results indicate that the surface resistance of the resistive film and the dielectric constant of the substrate can affect the absorbing property of the MA. This absorber may be used in many military fields.展开更多
Theoretical calculations predict transition frequencies in the terahertz range for the field-effect transistors based on carbon nanotubes, and this shows their suitability for being used in high frequency applications...Theoretical calculations predict transition frequencies in the terahertz range for the field-effect transistors based on carbon nanotubes, and this shows their suitability for being used in high frequency applications. In this paper, we have designed a field-effect transistor based on carbon nanotube with high transition frequency suitable for ultra-wide band applications. We did this by optimizing nanotube diameter, gate insulator thickness and dielectric constant. As a result, we achieved the transition frequency about 7.45 THz. The environment of open source software FETToy is used to simulate the device. Also a suitable model for calculating the transition frequency is presented.展开更多
The RFID is a rapidly developing technology. It’s used in many applications such as logistics, ticketing, security, employee attendance record and others. Also, fractal technology is used in many areas, and recently ...The RFID is a rapidly developing technology. It’s used in many applications such as logistics, ticketing, security, employee attendance record and others. Also, fractal technology is used in many areas, and recently in antenna design because it allows making multi-band and wide-band antennas. In this paper, two tri-band fractal antennas are studied for the Radio Frequency Identification (RFID) applications using the Method of Moment (MoM). The first one is designed for the RFID readers and it operates at 3.85 GHZ, 5.80 GHZ and 8.12 GHZ. The second one is designed for the RFID Tags and it operates at 3.94 GHZ, 5.65 GHZ and 8.20 GHZ.展开更多
This paper presents a low phase-noise fractional-N frequency synthesizer which provides an inphase/quadrature-phase（I/Q） signal over a frequency range of 220–1100 MHz for wireless networks of industrial automation...This paper presents a low phase-noise fractional-N frequency synthesizer which provides an inphase/quadrature-phase（I/Q） signal over a frequency range of 220–1100 MHz for wireless networks of industrial automation（WIA） applications. Two techniques are proposed to achieve the wide range. First, a 1.4–2.2 GHz ultralow gain voltage-controlled oscillator（VCO） is adopted by using 128 tuning curves. Second, a selectable I/Q divider is employed to divide the VCO frequency by 2 or 3 or 4 or 6. Besides, a phase-switching prescaler is proposed to lower PLL phase noise, a self-calibrated charge pump is used to suppress spur, and a detect-boosting phase frequency detector is adopted to shorten settling time. With a 200 k Hz loop bandwidth, lowest measured phase noise is 106 dBc/Hz at a 10 k Hz offset and 131 dBc/Hz at a 1 MHz offset. Fabricated in the TSMC 0.18 μm CMOS process, the synthesizer occupies a chip area of 1.2 mm^2, consumes only 15 m W from the 1.8 V power supply,and settles within 13.2 s. The synthesizer is optimized for the WIA applications, but can also be used for other short-range wireless communications, such as 433, 868, 916 MHz ISM band applications.展开更多
A 37 GHz wide-band programmable divide-by-N frequency divider(FD) composed of a divide-by-2 divider(acting as the first stage) and a divider with a division ratio range of 273–330(acting as the second stage) has been...A 37 GHz wide-band programmable divide-by-N frequency divider(FD) composed of a divide-by-2 divider(acting as the first stage) and a divider with a division ratio range of 273–330(acting as the second stage) has been designed and fabricated using standard 90 nm CMOS technology. The second stage divider consists of a high-speed divide-by-8/9 dual-modulus prescaler, a pulse counter, and a swallow counter. Both the first stage divider(with high speed) and the divide-by-8/9 prescaler employ dynamic current-mode logic(DCML) structure to improve the operating performance. The first stage divider can work from 2 to 40 GHz and the whole divider covers a wide frequency range from 25 to 37 GHz. The input sensitivity is as low as-20 d Bm at 32 GHz and the phase noise at 37 GHz is less than-130 d Bc/Hz at an offset of 1 MHz. The whole chip dissipates 17.88 m W at a supply voltage of 1.2 V and occupies an area of only 730 μm×475 μm.展开更多
基金supported by the National Natural Science Foundation of China (Grant No. 51207060)the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20090142110004)
文摘We propose an ultrathin wide-band metamaterial absorber （MA） based on a Minkowski （MIK） fractal frequency selective surface and resistive film. This absorber consists of a periodic arrangement of dielectric substrates sandwiched with an MIK fractal loop structure electric resonator and a resistive film. The finite element method is used to simulate and analyze the absorption of the MA. Compared with the MA-backed copper film, the designed MA-backed resistive film exhibits an absorption of 90% at a frequency region of 2 GHz-20 GHz. The power loss density distribution of the MA is further illustrated to explain the mechanism of the proposed MA. Simulated absorptions at different incidence cases indicate that this absorber is polarization-insensitive and wide-angled. Finally, further simulated results indicate that the surface resistance of the resistive film and the dielectric constant of the substrate can affect the absorbing property of the MA. This absorber may be used in many military fields.
文摘Theoretical calculations predict transition frequencies in the terahertz range for the field-effect transistors based on carbon nanotubes, and this shows their suitability for being used in high frequency applications. In this paper, we have designed a field-effect transistor based on carbon nanotube with high transition frequency suitable for ultra-wide band applications. We did this by optimizing nanotube diameter, gate insulator thickness and dielectric constant. As a result, we achieved the transition frequency about 7.45 THz. The environment of open source software FETToy is used to simulate the device. Also a suitable model for calculating the transition frequency is presented.
文摘The RFID is a rapidly developing technology. It’s used in many applications such as logistics, ticketing, security, employee attendance record and others. Also, fractal technology is used in many areas, and recently in antenna design because it allows making multi-band and wide-band antennas. In this paper, two tri-band fractal antennas are studied for the Radio Frequency Identification (RFID) applications using the Method of Moment (MoM). The first one is designed for the RFID readers and it operates at 3.85 GHZ, 5.80 GHZ and 8.12 GHZ. The second one is designed for the RFID Tags and it operates at 3.94 GHZ, 5.65 GHZ and 8.20 GHZ.
基金supported by the National High Technology Research and Development Program of China(No.2011AA040102)
文摘This paper presents a low phase-noise fractional-N frequency synthesizer which provides an inphase/quadrature-phase（I/Q） signal over a frequency range of 220–1100 MHz for wireless networks of industrial automation（WIA） applications. Two techniques are proposed to achieve the wide range. First, a 1.4–2.2 GHz ultralow gain voltage-controlled oscillator（VCO） is adopted by using 128 tuning curves. Second, a selectable I/Q divider is employed to divide the VCO frequency by 2 or 3 or 4 or 6. Besides, a phase-switching prescaler is proposed to lower PLL phase noise, a self-calibrated charge pump is used to suppress spur, and a detect-boosting phase frequency detector is adopted to shorten settling time. With a 200 k Hz loop bandwidth, lowest measured phase noise is 106 dBc/Hz at a 10 k Hz offset and 131 dBc/Hz at a 1 MHz offset. Fabricated in the TSMC 0.18 μm CMOS process, the synthesizer occupies a chip area of 1.2 mm^2, consumes only 15 m W from the 1.8 V power supply,and settles within 13.2 s. The synthesizer is optimized for the WIA applications, but can also be used for other short-range wireless communications, such as 433, 868, 916 MHz ISM band applications.
基金Project supported by the National Basic Research Program of China(No.2010CB327404)the National Natural Science Foundation of China(No.60901012)
文摘A 37 GHz wide-band programmable divide-by-N frequency divider(FD) composed of a divide-by-2 divider(acting as the first stage) and a divider with a division ratio range of 273–330(acting as the second stage) has been designed and fabricated using standard 90 nm CMOS technology. The second stage divider consists of a high-speed divide-by-8/9 dual-modulus prescaler, a pulse counter, and a swallow counter. Both the first stage divider(with high speed) and the divide-by-8/9 prescaler employ dynamic current-mode logic(DCML) structure to improve the operating performance. The first stage divider can work from 2 to 40 GHz and the whole divider covers a wide frequency range from 25 to 37 GHz. The input sensitivity is as low as-20 d Bm at 32 GHz and the phase noise at 37 GHz is less than-130 d Bc/Hz at an offset of 1 MHz. The whole chip dissipates 17.88 m W at a supply voltage of 1.2 V and occupies an area of only 730 μm×475 μm.
文摘为了探索高频段室内无线体域网通信的可行性,对11 GHz室内无线体域网的传播特性进行了测量与研究。基于大量的测量数据,给出了11 GHz频段室内无线体域网的路径损耗、阴影效应与均方根时延扩展的统计特性。针对体对体通信时人体相对角度变化的场景,提出了一种具有相对角度影响的路径损耗模型,该模型利用了与身体角度相关的路径损耗指数、浮动截距以及身体角度因子修正相对角度变化引入的路径损耗。为了验证模型的适用性,对比分析了在小型空教室和大型会议室两种不同场景下相对角度变化对信道传播特性的影响。研究结果表明:在收发端距离固定的情况下,路径损耗指数、浮动截距和由相对角度引起的路径损耗(Path Loss caused by Relative Angle,PLRA)均与相对角度具有三角函数关系;在收发端相对角度固定时,PLRA与收发端距离无关,仅与相对角度有关。上述研究结果可以为11 GHz频段在未来室内无线体域网的使用提供理论基础与实践依据。
