Broadband Dual-Input Doherty Power Amplifier Design Based on a Simple Adaptive Power Dividing Ratio Function

In this paper,a simple adaptive power dividing function for the design of a dual-input Doherty power amplifier(DPA)is presented.In the presented approaches,the signal separation function(SSF)at different frequency points can be characterized by a polynomial.And in the practical test,the coefficients of SSF can be determined by measuring a small number of data points of input power.Same as other dualinput DPAs,the proposed approach can also achieve high output power and back-off efficiency in a broadband operation band by adjusting the power distribution ratio flexibly.Finally,a 1.5-2.5 GHz highefficiency dual-input Doherty power amplifier is implemented according to this approach.The test results show that the peak power is 48.6-49.7d Bm,and the 6-d B back-off efficiency is 51.0-67.0%,and the saturation efficiency is 52.4-74.6%.The digital predistortion correction is carried out at the frequency points of 1.8/2.1GHz,and the adjacent channel power ratio is lower than-54.5d Bc.Simulation and experiment results can verify the effectiveness and correctness of the proposed method.

5G Wideband Bandpass Filtering Power Amplifiers Based on a Bandwidth-Extended Bandpass Matching Network

In this paper,a 5G wideband power amplifier(PA)with bandpass filtering response is synthesized using a bandwidth-extended bandpass filter as the matching network(MN).In this structure,the bandwidth(θ_(C))is defined as a variable in the closedform equations provided by the microstrip bandpass filter.It can be extended over a wide range only by changing the characteristic impedances of the structure.Different from the other wideband MNs,the extension of bandwidth does not increase the complexity of the structure(order n is fixed).In addition,based on the bandwidth-extended structure,the wideband design of bandpass filtering PA is not limited to the fixed bandwidth of the specific filter structure.The theoretical analysis of the MN and the design flow of the PA are provided in this design.The fabricated bandpass filtering PA can support almost one-octave bandwidth(2-3.8 GHz),covering the two 5G bands(n41 and n78).The drain efficiency of 47%-60%and output power higher than 40 dBm are measured.Good frequency selectivity in S-parameter measurements can be observed.

Research Towards Terahertz Power Amplifiers in Silicon-Based Process

In view of the existing design challenges for Terahertz(THz)power amplifiers(PAs),the common design methods and the efforts of the State Key Laboratory of Millimeter Wave,Southeast University,China in the development of silicon-based THz PAs,mainly including silicon-based PAs with operating frequencies covering 100–300 GHz,are summarized in this paper.Particularly,we design an LC-balun-based two-stage differential cascode PA with a center frequency of 150 GHz and an output power of 14 dBm.Based on a Marchand balun,we report a 220 GHz three-stage differential cascode PA with a saturated output power of 9.5 dBm.To further increase the output power of THz PA,based on a four-way differential power combining technique,we report a 211–263 GHz dual-LC-tank-based broadband PA with a recorded 14.7 dBm Psat and 16.4 dB peak gain.All the above circuits are designed in a standard 130 nm silicon germanium(SiGe)BiCMOS process.

Tri-state Modulation Power Driving of Electro-hydraulic Proportional Amplifier

Switch electro-hydraulic proportional amplifier（PA） widely employs single switch modulation power driving（SSMPD） or reverse discharging power driving（RDPD） at present. SSMPD has slow dynamic response, and can＇t adjust independently the dither signal＇s amplitude and frequency; RDPD accelerates the current decay; consequently, it increases current ripple and power loss. For the purpose of solving the above mentioned problem, the tri-state modulation power driving（TSMPD） scheme was proposed for improving the performance of power driving. Detailedly, the hardware circuit for the tri-state modulation power driving is designed; the tri-state modulation algorithm is realized by digital signal processor（DSP）. The tri-state modulation power driving is investigated by experiments, comparetive experiments among the single switch modulation power driving（SSMPD）, reverse discharging power driving（RDPD）, and the TSMPD are implemented, and the experimental results demonstrate that the linearity error of TSMDP meets the requirement of PA; the current response of TSMSP is the best; the amplitude of ripple current of the TSMPD can be reduced without increasing frequency of PWM, in addition, dither signal amplitude and frequency can be adjusted independently for each other. It is very meaningful to guide the development of high performance proportional amplifier for high frequency response proportional solenoid.

Robust power amplifier predistorter by using memory polynomials

In memory polynomial predistorter design, the coefficient estimation algorithm based on normalized least mean square is sensitive to initialization parameters. A predistorter based on generalized normalized gradient descent algorithm is proposed. The merit of the GNGD algorithm is that its learning rate provides compensation for the independent assumptions in the derivation of NLMS, thus its stability is improved. Computer simulation shows that the proposed predistorter is very robust. It can overcome the sensitivity of initialization parameters and get a better linearization performance.

Adaptive Digital Predistortion Schemes to Linearize RF Power Amplifiers with Memory Effects

To compensate for nonlinear distortion introduced by RF power amplifiers （PAs） with memory effects, two correlated models, namely an extended memory polynomial （EMP） model and a memory lookup table （LUT） model, are proposed for predistorter design. Two adaptive digital predistortion （ADPD） schemes with indirect learning architecture are presented. One adopts the EMP model and the recursive least square （RLS） algorithm, and the other utilizes the memory LUT model and the least mean square （LMS） algorithm. Simulation results demonstrate that the EMP-based ADPD yields the best linearization performance in terms of suppressing spectral regrowth. It is also shown that the ADPD based on memory LUT makes optimum tradeoff between performance and computational complexity.

Research on the Effect of High Power Microwave on Low Noise Amplifier and Limiter Based on the Injection Method

The reliability of electronic device is threatened in high power microwave (HPM) environment. In accordance with the situation that the emulation is ineffective in evaluating the accuracy and precision of the HPM effect to electronic device, the experimental method is used to resolve the problem. Low Noise Amplifier (LNA) and Limiter are selected as the objects for the experiments, the structural characteristic of the front-end of radar receiver is described, the phenomena and criterion are elaborated and analyzed using injection method due to its ability to get an accurate threshold avoiding the complex coupling, the basic principle of injection experiment is demonstrated, and the method and process of effect experiment about Low Noise Amplifier and Limiter are also explained. The experimental system is established, and the system is composed of low power microwave source such as TWT, test equipment for obtaining the effect parameters, and some of auxiliary equipments as camera, optical microscope or electron microscopy, attenuator, detector, and directional coupler etc. The microwave delivered from source is adjusted to the power infused by attenuator, and pour in the decanting point of effecter via directional coupler, then the couple signal created by directional coupler is input to the recording instrument after detecting by detector, finally the power of effecter is obtained. The value of power, which damages the effecter in the microwave pulse environment, is classified at the index of sensitivity, and the threshold is obtained by power diagnose and wave test. Some regular understandings of the HPM effect to electronic device are obtained based on the results of the experiments. It turns out that the index of electronic device is influenced significantly by the energy via front door coupling, the MOSFET made up of GaAs is the most wearing part to HPM in LNA, the damage threshold of LNA is about 40dBm under single pulse while in repetitive pulse the value is from 33.3dBm to 43.9dBm according to different wave band. The damage threshold of Limiter is about 56dBm to80dBm.

Design Technologies for Silicon-Based High-Efficiency RF Power Amplifiers:A Brief Overview

This paper presents a brief overview of several promising design technologies for high efficiency silicon-based radio frequency （RF） power amplifiers （PAs） as well as the use of these technologies in mobile broadband wireless communications. Four important aspects of PA design are addressed in this paper. First, we look at class-E PA design equations and provide an example of a class-E PA that achieves efficiency of 65-70% at 2.4 GHz. Then, we discuss state-of-the-art envelope tracking （ET） design for monolithic wideband RF mobile transmitter applications. A brief overview of Doherty PA design for the next-generation wireless handset applications is then given. Towards the end of the paper, we discuss an inherently broadband and highly efficient class-J PA design targeting future multi-band multi-standard wireless communication protocols.

The Paralleling of High Power High Frequency Amplifier Based on Synchronous and Asynchronous Control

The vertical position of plasma in the HT-7U Tokamak is inherently unstable. In order to realize active stabilization, the response rate of the high-power high-frequency amplifier feeding the active control coils must be fast enough. This paper analyzes the paralleling scheme of the power amplifier through two kinds of control mode. One is the synchronous control; the other is the asynchronous control. Via the comparison of the two kinds of control mode, both of their characteristics are given in the text. At last, the analyzed result is verified by a small power experiment.

Legendre Wavelet Neural Networks for Power Amplifier Linearization

In this paper, a novel technique for power amplifier (PA) linearization is presented. The Legendre wavelet neural networks (LWNN) is first utilized to model PA and inverse structure of the PA by applying practical transmission signals and the gradient descent algorithm is applied to estimate the coefficients of the LWNN. Secondly, this technique is implemented to identify and optimize the coefficient parameters of the proposed pre-distorter (PD), i.e., the inversion model of the PA. The proposed method is most efficient and the pre-distorter shows stability and effectiveness because of the rich properties of the LWNN. A quite significant improvement in linearity is achieved based on the measured data of the PA characteristics and out power spectrum has been compared.

Pruned Volterra Models with Memory Effects for Nonlinear Power Amplifiers

In this letter, a novel model is proposed for modeling the nonlinearity and memory effects of power amplifiers. The classical Volterra model is modified through a function of the sum of nonlinearity order with sum of memory length. The parameters of this model can be extracted in digital domain since the model is analyzed based on the envelope signals. The model we proposed enables a substantial reduction in the number of coefficients involved, and with excellent accuracy.

Adaptive Quasi-PID Control Method for Switching Power Amplifiers

Quasi-PID control method that is able to effectively inhibit the inherent tracking error of PI control method is proposed on the basis of a rounded theoretical analysis of a model of switching power amplifiers (SPAs). To avoid the harmful impacts of the circuit parameter variations and the random disturbances on quasi-PID control method, a single neuron is introduced to endow it with self-adaptability. Quasi-PID control method and the single neuron combine with each other perfectly, and their formation is named as single-neuron adaptive quasi-PID control method. Simulation and experimental results show that single-neuron adaptive quasi-PID control method can accurately track both the predictable and the unpredictable waveforms. Quantitative analysis demonstrates that the accuracy of single-neuron adaptive quasi-PID control method is comparable to that of linear power amplifiers (LPAs) and so can fulfill the requirements of some high-accuracy applications, such as protective relay test. Such accuracy is very difficult to be achieved by many modern control methods for converter controls. Compared with other modern control methods, the programming realization of single-neuron adaptive quasi-PID control method is more suitable for real-time applications and realization on low-end microprocessors for its simple structure and lower computational complexity.

An Envelope Hammerstein Model for Power Amplifiers

In this paper, an envelope Hammerstein （EH） model is introduced to describe dynamic input -output characteristics of RF power amplifiers. In the modeling approach, we use a new truncation method and an established nonlinear time series method to determine model structure. Then, we discuss the process of model parameter extraction in detailed. Finally, a 2 W WCDMA power amplifier is measured to verify the performance of EH model, and good agreement between model output and measurement result shows our model can accurately predict output characteristic of the power amplifier.

High power high beam quality diode-pumped 1319-nm Nd:YAG oscillator-amplifier laser system

This paper demonstrated a high power and high beam quality diode-pumped 1319-nm Nd：YAG master oscillator-power amplifier laser system. A thermally near-unstable resonator with four-rod birefringence compensation fiat-fiat cavity was adopted as the master oscillator. A solid etalon was inserted in the unidirectional ring resonator to compress the laser linewidth. Under a repetition rate of 500 Hz and pulse width of 160 μs, the master oscillator delivers an average output power of 16.8 W at 1319 nm with linear polarisation, beam quality factor M^2=1.16 and linewidth of 3.2 GHz. A double-pass power amplifier with two amplifier stages was employed for higher power scaling and the output power was amplified to be 25.9 W with M^2 = 1.43.

Robust Digital Predistortion for LTE/5G Power Amplifiers Utilizing Negative Feedback Iteration

A robust digital predistortion(DPD)technique utilizing negative feedback iteration is introduced for linearizing power amplifiers(PAs)in long term evolution(LTE)/5G systems.Different from the conventional direct learning and indirect learning structure,the proposed DPD suggests a two-step method to identify the predistortion.Firstly,a negative feedback based iteration is used to estimate the optimal DPD signal.Then the corresponding DPD parameters are extracted by forward modeling with the input signal and optimal DPD signal.The iteration can be applied to both single-band and dual-band PAs,which will achieve superior linear performance than the conventional direct learning DPD while having a relatively low computational complexity.The measurement is carried out on a broadband Doherty PA(DPA)with a 200 MHz bandwidth LTE signal at 2.1 GHz,and on a 5G DPA with two 10 MHz LTE signals at 3.4/3.6 GHz for validation in dual-band scenarios.

Wavelet network based predistortion method for wideband RF power amplifiers exhibiting memory effects

RF power amplifiers (PAs) are usually considered as memoryless devices in most existing predistortion techniques. Nevertheless, in wideband communication systems, PA memory effects can no longer be ignored and memoryless predistortion cannot linearize PAs effectively. After analyzing PA memory effects, a novel predistortion method based on wavelet networks (WNs) is proposed to linearize wideband RF power amplifiers. A complex wavelet network with tapped delay lines is applied to construct the predistorter and then a complex backpropagation algorithm is developed to train the predistorter parameters. The simulation results show that compared with the previously published feed-forward neural network predistortion method, the proposed method provides faster convergence rate and better performance in reducing out-of-band spectral regrowth.

Novel approach to harmonic control for Class F power amplifier with high power added efficiency

This paper presents a new topology to implement Class F power amplifier for eliminating the on-resistance (R_(ON))effect.The time-domain and frequency-domain voltage and current waveforms for Class F amplifier are ana- lyzed using Fourier series analysis method.Considering the on-resistance effect,the formulas of the efficiency,output power,dc power dissipation,and fundamental load impedance are given from ideal current and voltage waveforms.For experimental verification,we designed and implemented a Class F power amplifier,which operates at 850 MHz using MGaAs/GaAs Heterostructure FET(HFET)device,and analyzed the measurement results.Test results show that the maximum PAE of 67% can be achieved at 28 dBm output power level.

New thermal optimization scheme of power module in solid-state amplifier

The new 1 kW power module for ADS project needs the optimization of cooling design including water flow and tunnel layout, and the water flow of three tons per hour was chosen to be a goal for a 20 kW power source.According to analysis from the insertion and integrated loss, about 24 modules were integrated into the rated power. Thus, every module has a cooling flow of 2.1 L/min for RF heat load and power supply loss, which is very hard to achieve if no special consideration and techniques. A new thermal simulation method was introduced for thermal analysis of cooling plate through CST multi-physics suite,especially for temperature of power LDMOS transistor.Some specific measures carried out for the higher heat transfer were also presented in this paper.

A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT

A C-band high efficiency and high gain two-stage power amplifier based on A1GaN/GaN high electron mobility transistor （HEMT） is designed and measured in this paper. The input and output impedances for the optimum power-added efficiency （PAE） are determined at the fundamental and 2nd harmonic frequency （f0 and 2f0）. The harmonic manipulation networks are designed both in the driver stage and the power stage which manipulate the second harmonic to a very low level within the operating frequency band. Then the inter-stage matching network and the output power combining network are calculated to achieve a low insertion loss. So the PAE and the power gain is greatly improved. In an operation frequency range of 5,4 GHz-5.8 GHz in CW mode, the amplifier delivers a maximum output power of 18.62 W, with a PAE of 55.15 % and an associated power gain of 28.7 dB, which is an outstanding performance.

X-Band Power Amplifier for Next Generation Networks Based on MESFET

Advanced wireless standards of communication like 3GPP and LTE are becoming more and more efficient and with this evolution of communication systems mobile equipment is also become smaller and smaller. Power amplifier designing has become a very crucial task in this era where efficiency and size are the main concern of any designer. In this paper we have design and analyzed X-band Class E Metal-semiconductor field effect transistor(MESFET) based Power Amplifier. This device targets the devices which use OFDM technique to improve their spectral efficiency for the next generation communication systems. Microstrip lines are used to achieve small size for our design instead of lumped components. Load Pull measurements are used to get MESFET input and output impedances optimum values. For linear and non linear operation small signal mathematical model of the design is used. To reduce thermal losses FR4 substrate is used to increase PA efficiency. Our designs shows small values of input and output return loss of about-22.3d B and-23.716 d B achieving a high gain of about25.6 d B respectively, with PAE of about 30 % having stability factor greater than 1 and 21.894 d Bm of output power.