Preface to Special Issue on Towards High Performance Ga_(2)O_(3) Electronics: Epitaxial Growth and Power Devices(Ⅰ)

There is currently great optimism within the electronics community that gallium oxide(Ga_(2)O_(3)) ultra-wide bandgap semiconductors have unprecedented prospects for eventually revolutionizing a rich variety of power electronic applications. Specially, benefiting from its ultra-high bandgap of around 4.8 eV, it is expected that the emerging Ga_(2)O_(3) technology would offer an exciting platform to deliver massively enhanced device performance for power electronics and even completely new applications.

Application of Power Electronics Converters in Renewable Energy

Against the backdrop of global energy shortages and increasingly severe environmental pollution,renewable energy is gradually becoming a significant direction for future energy development.Power electronics converters,as the core technology for energy conversion and control,play a crucial role in enhancing the efficiency and stability of renewable energy systems.This paper explores the basic principles and functions of power electronics converters and their specific applications in photovoltaic power generation,wind power generation,and energy storage systems.Additionally,it analyzes the current innovations in high-efficiency energy conversion,multilevel conversion technology,and the application of new materials and devices.By studying these technologies,the aim is to promote the widespread application of power electronics converters in renewable energy systems and provide theoretical and technical support for achieving sustainable energy development.

The Research and Application of the Anti-Interference Techniques of Electronic Device in Power System

This paper presents the study and application of the electronic device anti-interference techniques underhigh voltage and/or heavy current electro-magnetic circumstance in power system.[

The Advent of Wide Bandgap Green-Synthesized Copper Zinc Tin Sulfide Nanoparticles for Applications in Optical and Electronic Devices

Power-electronic devices are widely used in various applications, such as voltage and frequency control for transmitting and converting electric power. As these devices are becoming increasingly important, there is a need to reduce their losses and improve their performance to reduce electric power consumption. Current power semiconductor devices, such as inverters, are made of silicon (Si), but the performance of these Si power devices is reaching its limit due to physical properties and energy bandgap. To address this issue, recent developments in wide bandgap (WBG) semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN), offer the potential for a new generation of power semiconductor devices that can perform significantly better than silicon-based devices. In this research, a green synthesized copper-zinc-tin-sulfide (CZTS) nanoparticle is proposed as a new WBG semiconductor material that could be used for optical and electronic devices. Its synthesis, consisting of the production methods and materials used, is discussed. The characterization is also discussed, and further research is recommended in the later sections to enable the continual advancement of this technology.

Design of Transformer Magnetic Bias Protection Device in High Power Electronic Equipments

As the power electronics technology is widely used in the power system, it may also bring the DC component to the transformer operation, resulting in DC bias and may cause great harm to the transformer. In this article, the device to protect transformer from DC magnetic bias is designed. On the basis of load DC current, a magnetic bias protection device is developed by combination of current sensor, electric information collection circuit, signal filtering circuit, signal modulating circuits, fault feature judging circuit, automatic range tracking circuit, intelligent logic synthesis unit and implementation output circuit. By operating in temperature-rise test equipment in the high power electronic lab, the device is proved with reliability, high sensitivity and worthy of promotion and application.

A review of the most recent progresses of state-of-art gallium oxide power devices

Until very recently, gallium oxide(Ga_2O_3) has aroused more and more interests in the area of power electronics due to its ultra-wide bandgap of 4.5–4.8 eV, estimated critical field of 8 MV/cm and decent intrinsic electron mobility limit of250 cm2/(V·s), yielding a high Baliga's figures-of-merit(FOM) of more than 3000, which is several times higher than GaN and SiC.In addition to its excellent material properties, potential low-cost and large size substrate through melt-grown methodology also endows β-Ga_2O_3 more potential for future low-cost power devices. This article focuses on reviewing the most recent advances ofβ-Ga_2O_3 based power devices. It will be starting with a brief introduction to the material properties of β-Ga_2O_3 and then the growth techniques of its native substrate, followed by the thin film epitaxial growth. The performance of state-of-art β-Ga_2O_3 devices, including diodes and FETs are fully discussed and compared. Finally, potential solutions to the challenges of β-Ga_2O_3 are also discussed and explored.

ANN-Based Identification of Steady-State Behavior Parameters of Composite Power Semiconductor Device Model

The paper describes the application of an ANN based approach to the identification of the parameters relevant to the steady state behavior of composite power electronic device models of circuit simulation software. The identification of model parameters of IGBT in PSPICE using BP neural network is illustrated.

“光储直柔”建筑配电系统应用研究

以某项目为例分析“光储直柔”在建筑物中的应用,并对“光储直柔”系统的应用场景、建筑直流配电系统的关注点及“光储直柔”系统关键设备进行阐述。

电力电子系统中的电磁兼容专辑主编述评

SiC、GaN新一代宽禁带功率半导体在推动电力电子设备快速高频化、高效化和小体积化的同时,更容易干扰敏感负载、影响无线电通讯,乃至危害自身安全、可靠运行,从而给电力电子设备内外部的电磁兼容性能带来极大的压力和挑战。近年来,功率开关器件的射频特性、磁性器件的宽频带电磁模型、开关电源电磁辐射机理、无线电能传输近场特性、新型电磁干扰EMI(electromagnetic interference)滤波器设计成为研究热点,并受到了学术界及工业界的持续关注。《电源学报》特别推出“电力电子系统中的电磁兼容”专辑,以期推进电力电子系统电磁兼容分析与设计领域难点和热点问题的探讨。

高比例分布式电源配电网中低压柔性互联协调规划

柔性互联技术是解决高比例分布式电源(distributed generation,DG)配电网面临诸多问题的有效手段之一。提出了一种基于多层优化的配电网中压与低压柔性互联协调规划方法。首先,建立基于电力电子柔性互联设备(flexible interconnected devices,FID)的中低压柔性互联配电网潮流模型。然后,构建三层协调规划模型,上层以低压FID年运行成本及台区变压器负载率的年方差最小为目标,中层以中压FID年运行成本及从上级电网年购电成本最小为目标,分别决策低压和中压FID的安装位置与容量,下层以各场景的从上级电网购电成本最小为目标优化系统运行,并采用自适应粒子群优化和二阶锥规划相结合的混合算法求解。最后,采用含高比例DG的IEEE 33节点配电网进行算例分析,通过柔性互联规划系统的年综合运行成本降低了19.01%,台区变压器负载率的年方差减少了82.59%,验证了所提规划模型的有效性。

一种基于磁耦合转移原理的10kV直流断路器

直流电流没有自然过零点,因此开断直流短路电流比开断交流短路电流更为困难。本文介绍一种基于磁耦合电流转移原理的中压10kV直流断路器拓扑方案,该断路器可实现对15kA直流电流的快速开断。首先,对直流断路器原理和控制逻辑进行介绍;然后,根据拓扑方案提出快速机械开关、电力电子开关、磁耦合装置等核心部件的设计思路;最后,搭建仿真模型对该方案进行仿真分析,模拟不同工况下的开断情况,仿真结果验证了该方案的有效性。

Failure Analysis of Power Electronic Devices and Their Applications under Extreme Conditions

Power electronic devices are the core components of modern power converters,not only for normal applications,but also for extreme conditions.Current design of power electronic devices require large redundancies for reliability.This results in huge volume and weight for a large-capacity power converter,especially for some extreme applications.Therefore,to optimize the power density,the reliability of power devices needs to be investigated first in order to obtain the accurate operational margin of a power device.Although much research on device failure analysis has been reported,there still lacks efficient failure evaluation methods.This paper first summarizes the current failure research.Then,a three-step failure analysis method of power electronic devices is proposed as:failure information collection,failure identification and mechanism,and failure evaluation.The physics-based modeling method is emphasized since it has a strong relationship with the device fundamentals.After that,power electronic device applications under extreme conditions are introduced and a design method of device under extreme conditions is proposed based on the thermal equilibrium idea.Finally,the challenges and prospects to improve the power device reliability under extreme conditions are concluded.

基于等效励磁电感的SiC串联器件型中压双有源桥变换器的软开关技术

基于SiC串联器件的双有源桥变换器因具有开关损耗小、功率密度高、能量控制简单等优势,有望成为中压变换场景中实现高频隔离的优选方案。为保证SiC串联器件的可靠均压,各器件上并联大容值缓冲电容,然而该设计使变换器在传输功率较低时难以实现零电压开通,严重影响变换器的整体效率和串联器件的可靠运行。该文通过构建SiC串联器件型中压双有源桥变换器多模态运行模型并深入分析其运行特性,提出一种基于等效励磁电感的无源软开关技术。所提技术可通过优化外接传输电感位置的方式实现中压侧等效励磁电感参数调节,从而在无额外控制前提下实现SiC串联器件的软开关范围扩展。最后,设计了4 kV/1 kV实验样机,实现了100 kW下运行。实验结果显示,所提出的软开关技术能显著地扩展变换器中SiC串联器件的软开关范围,在保证SiC串联器件均压稳定性的同时能够大幅降低变换器在轻载运行时的功耗。

毫米波功率应用研究进展(特邀)

微波功率应用是一种直接利用微波的功率和能量与物质互作用的应用。近年来,随着毫米波功率源技术的发展,微波功率应用逐渐向毫米波频段发展。由于毫米波波长较短,在功率应用中展现出诸多独特特性,并发展出一系列独特应用。本文对毫米波在物理科学、材料科学、生物医学等领域的研究工作进行了评述,主要包括聚变等离子体加热与诊断、材料加工与分析、生物效应应用等,对目前研究和发展中的主要瓶颈问题进行了介绍,并对未来发展进行了展望。

用于货架电子设备的准无线电能传输技术

本文提出了一种可为金属货架上的微功耗电子设备以准无线方式供电或充电的技术。该技术包括发射和接收两部分,高频发射电源连接到货架层板以提供电能,接收电路使用集总元件,可以内置到电子设备中。通过分析电场耦合,建立了单接收及双接收系统的电路模型,并分析了功率效率传输特性。仿真及实验系统验证了所提技术的可行性。结果表明,接收设备可在货架平台内的任意位置获得稳定的电功率。接收设备数量增加时,系统的传输效率得以提高。六接收设备时,单个功率仍能在500 mW以上,足以驱动显示牌类的微功耗电子设备。

高压大容量柔性直流换流阀关键设计和发展趋势

柔性直流输电技术具有控制灵活性高、无换相失败问题和动态无功支撑能力强等突出优点,已广泛应用于点对点输电、背靠背联网和构建直流电网等场景。柔性直流换流阀通过功率器件的频繁开断来实现交、直流的电能转换,是柔性直流输电工程的核心设备。首先,结合工程实践经验,系统梳理并提出了不同应用场景下柔性直流换流阀的关键设计要求,对比分析了柔性直流输电工程中常用的功率器件及柔性直流换流阀拓扑,展望了柔性直流换流阀的发展趋势。此外,针对2种典型的未来应用场景,对比了不同的技术方案,可为柔性直流输电技术应用于高压大容量远距离输电场景提供有益借鉴。

正负序时变幅频旋转矢量及其在三相静止坐标系上投影瞬时值间关系的特征及仿真分析

随着电力电子化并网设备在电力系统中所占比例的大幅增加,电源侧的输出特性明显区别于传统以同步发电机为代表的电源输出特性,电力电子化电力系统故障分析尤其是网络不对称故障分析面临新的挑战。然而现有的故障分析方法基本未认识到设备内电势的时变幅频特征,仅有的基于时变幅频信号提出的时变幅频对称分量法也仅是1组数学化的分解公式,无明确的物理内涵作为方法支撑。针对此,通过分析正/负序时变幅频旋转矢量投影三相瞬时值间关系的特征,诠释了时变幅频对称分量法的物理本质。首先,研究时变幅频内电势旋转矢量的产生机制;然后,基于正/负时变幅频旋转矢量在三相静止坐标系上投影瞬时值特性建立描述各相的旋转相量概念及正/负序三相旋转相量图;最后,基于上述旋转矢量投影等效三相旋转相量的过程建立时变幅频对称分量法的物理内涵,由此将不对称故障点电压等效为正/负序旋转相量,并结合仿真进行分析。分析结果表明,所提故障分析方法为时变幅频内电势激励下网络不对称故障分析提供了基础理论。

应用液态金属的电力电子器件散热器设计

绝大多数应用绝缘栅双极型晶体管(IGBT)模块的换流阀均采用水冷系统。尽管水冷却系统的散热技术已经相当成熟且具有许多优点,但随着电力电子器件散热功率的提高,传统的水冷系统逐渐无法满足这些器件的散热需求。针对现有的传统水冷散热系统模型,利用数值模拟分析技术,对比分析了不同的冷板材料(铜、铝)和冷却工质(水、液态金属)工况下替换其散热工质分别为去离子水和液态金属的散热效果。结果表明:采用铜和液态金属的散热系统的散热性能得到大大提高。在此基础上,提出了液态金属散热系统模型,并通过与传统冷却模型进行比较,凸显了其在散热性能上的明显优越性。

“宽禁带电力电子器件的原理与应用”课程建设

为了满足南京航空航天大学电气工程及其自动化专业本科教育人才培养需求,建设了“宽禁带电力电子器件的原理与应用”课程。教学内容分为三大模块和七个学习阶段。在教学过程中,引入“教师引导、自主学习、问题导向、扩展视野”的教学理念,将启发式、讨论式等教学方法互相配合使用,充分激发学生学习兴趣,加深对器件知识的理解,强化器件测试和应用能力,着力培养学生分析问题和解决问题的能力。

“双碳”战略背景下铁氧体磁性材料及器件发展机遇

新型电力电子(PE)系统的构建是减少二氧化碳排放的重要手段,磁性材料及器件是构建该系统最重要的电子元件之一。介绍了最新PE系统中使用的磁性材料及器件,证实了磁性材料及器件在新型PE系统中的重要作用。分析了我国铁氧体软磁材料发展状况及与世界最先进水平之间存在的差距,提出要与系统设计者加强交流合作,共同推进新型PE系统的发展,让磁性材料与器件为实现“双碳”目标做出更大的贡献。