Erratum to“Tunneling Electrons Triggered Energy Transfer between Coherently Coupled Donor-Acceptor Molecules”

In the original publication of my article,“Tunneling Electrons Triggered Energy Transfer between Coherently Coupled Donor-Acceptor Molecules”,which was published in Chinese Journal of Chemical Physics,Vol.37,No.4,pages 497-504,I have identified an innegligible error that requires correction.I apologize for any inconvenience and appreciate the opportunity to clarify it in the following:Error Description:In page 499,since the words “FIG.2(b,d)”in line 78 are mentioned earlier than the words“FIG.1(a)”in line 82 in the submitted manuscript,the order of Figure 1 and Figure 2 are changed automatically in the official publication of the article,which makes the logical relationship of the article confused to a significant degree.

Tunneling Barrier Thickness Dependence of Spin Polarization of Ferromagnet in Magnetic Tunnel Junctions

For designing low-impedance magnetic tunnel junctions(MTJs),it has been found that tunneling magnetoresistance strongly correlates with the insulating barrier thickness,imposing a fundamental problem about the relationship between spin polarization of ferromagnet and the insulating barrier thickness in MTJs.Here,we investigate the influence of alumina barrier thickness on tunneling spin polarization(TSP)through a combination of theoretical calculations and experimental verification.Our simulating results reveal a significant impact of barrier thickness on TSP,exhibiting an oscillating decay of TSP with the barrier layer thinning.Experimental verification is realized on FeNi/AlO_(x)/Al superconducting tunnel junctions to directly probe the spin polarization of FeNi ferromagnet using Zeeman-split tunneling spectroscopy technique.These findings provide valuable insights for designs of high-performance spintronic devices,particularly in applications such as magnetic random access memories,where precise control over the insulating barrier layer is crucial.

Pseudospin-filter tunneling of massless Dirac fermions

The tunneling of the massless Dirac fermions through a vector potential barrier are theoretically investigated, wherethe vector potential can be introduced by very high and very thin (d-function) magnetic potential barriers. We showthat, distinct from the previously studied electric barrier tunneling, the vector potential barriers are more transparent forpseudospin-1/2 Dirac fermions but more obstructive for pseudospin-1 Dirac fermions. By tuning the height of the vectorpotential barrier, the pseudospin-1/2 Dirac fermions remain transmitted, whereas the transmission of the pseudospin-1Dirac fermions is forbidden, leading to a pseudospin filtering effect for massless Dirac fermions.

On Klein tunneling of low-frequency elastic waves in hexagonal topological plates

Incident particles in the Klein tunnel phenomenon in quantum mechanics can pass a very high potential barrier.Introducing the concept of tunneling into the analysis of phononic crystals can broaden the application prospects.In this study,the structure of the unit cell is designed,and the low frequency(<1 k Hz)valley locked waveguide is realized through the creation of a phononic crystal plate with a topological phase transition interface.The defect immunity of the topological waveguide is verified,that is,the wave can propagate along the original path in the cases of impurities and disorder.Then,the tunneling phenomenon is introduced into the topological valley-locked waveguide to analyze the wave propagation,and its potential applications(such as signal separators and logic gates)are further explored by designing phononic crystal plates.This research has broad application prospects in information processing and vibration control,and potential applications in other directions are also worth exploring.

3D-bioprinted tri-layered cellulose/collagen-based drug-eluting fillers for the treatment of deep tunneling wounds

Tunneling wounds create passageways underneath the skin surface with varying sizes and shapes and can have twists and turns,making their treatment extremely difficult.Available wound care solutions only cater to superficial wounds,and untreated tunneling wounds pose major health concerns.This study aims to fulfill this challenge by fabricating tunnel wound fillers(TWFs)made of natural polymers that mimic the dermal extracellular matrix.In this study,cellulose microfibers(CMFs)derived from banana stem and fish skin-derived collagen were used to formulate bio-inks with varying CMF contents(25,50,and 75 mg).Tri-layered(CMFs,primary and secondary collagen coatings),drug-eluting(Baneocin),and cell-laden(human mesenchymal stem cells)TWFs were three-dimensional(3D)-printed and extensively characterized.CMFs showed the most suitable rheological properties for 3D printing at 50 mg concentration.The Alamar Blue data showed significantly increased cell proliferation from Day 1 to Day 7,and scratch tests used to evaluate in vitro wound healing revealed that the best coverage of the wound area was achieved using CMFs in combination with collagen and alginate.Finally,the TWF showed promising capability and tunability in terms of wound shape and size upon testing on a chicken tissue model.The results demonstrate the tremendous potential of TWFs in treating deep tunneling wounds with unique advantages,such as patient-specific customization,good wound exudate absorption capability while releasing wound healing drugs,and the inclusion of stem cells for accelerated healing and tissue regeneration.

Assessing the dynamics of O_(2) desorption from cobalt phthalocyanine by in situ electrochemical scanning tunneling microscopy

We report here the in situ electrochemical scanning tunneling microscopy(ECSTM) study of cobalt phthalocyanine(CoPc)-catalyzed O_(2) evolution reaction(OER) and the dynamics of CoPc-O_(2) dissociation.The self-assembled CoPc monolayer is fabricated on Au(111) substrate and resolved by ECSTM in 0.1 M KOH electrolyte.The OH^(-)adsorption on CoPc prior to OER is observed in ECSTM images.During OER,the generated O_(2) adsorbed on Co Pc is observed in the CoPc monolayer.Potential step experiment is employed to monitor the desorption of OER-generated O_(2) from CoPc,which results in the decreasing surface coverage of CoPc-O_(2) with time.The rate constant of O_(2) desorption is evaluated through data fitting.The insights into the dynamics of Co-O_(2) dissociation at the molecular level via in situ imaging help understand the role of Co-O_(2) in oxygen reduction reaction(ORR) and OER.

Surface evolution of thermoelectric material KCu_(4)Se_(3) explored by scanning tunneling microscopy

Novel two-dimensional thermoelectric materials have attracted significant attention in the field of thermoelectric due to their low lattice thermal conductivity.A comprehensive understanding of their microscopic structures is crucial for driving further the optimization of materials properties and developing novel functional materials.Here,by using in situ scanning tunneling microscopy,we report the atomic layer evolution and surface reconstruction on the cleaved thermoelectric material KCu_(4)Se_(3) for the first time.We clearly revealed each atomic layer,including the naturally cleaved K atomic layer,the intermediate Se^(2-)atomic layer,and the Se^(-)atomic layer that emerges in the thermodynamic-stable state.Departing from the maj ority of studies that predominantly concentrate on macroscopic measurements of the charge transport,our results reveal the coexistence of potassium disorder and complex reconstructed patterns of selenium,which potentially influences charge carrier and lattice dynamics.These results provide direct insight into the surface microstructures and evolution of KCu_(4)Se_(3),and shed useful light on designing functional materials with superior performance.

An Empirical Direct Tunneling Current Expression for Ultra-Thin Oxide nMOSFETs

An empirical expression for the direct tunneling (DT) current is obtained.This expression can be used to calculate the DT current for nMOSFETs with ultra thin oxide when the oxide thickness is considered as an adjustable parameter.The results have good agreement with the experimental data.And the oxide thickness obtained is less than the value acquired from the capacitance voltage( C V )method.

Research on Tunneling Techniques in Virtual Private Networks

It is a trend of virtual private networks (VPNs) to be used for information exchange between enterprises, branches of enterprises and enterprises and their employees instead of traditional dial networks and leased lines. The tunneling technique is the key technique to implement VPN. In this paper, with the VPN implementation requirements in mind, we perform a comparative research on the existing tunneling protocols including GRE, L2TP, IPSec and IP/IP. We also propose an integrated scheme of tunneling mechanism that supports VPN under the current condition.

Fabrication and Characterization of Tunneling Current of Anodic Bonded Dry-Etched MEMS Tunneling Accelerometer

A tunneling accelerometer is fabricated and characterized based on the extension of the silicon-glass anodic-bonding and deep etching releasing process provided by Peking University.The tunneling current under open loop operation is tested in the air by HP4145B semiconductor analyzer,which verifies the presence of tunneling current and the exponential relationship between tunneling gap and tunneling current.The tunneling barrier is extrapolated to be from 1.182 to 2.177eV.The threshold voltages are tested to be 14～16V for most of the devices.The threshold voltages under -1,0,and +1g are tested,respectively,which shows the sensitivity of the accelerometer is about 87mV/g.

Direct Tunneling Effect in Metal-Semiconductor Contacts Simulated with Monte Carlo Method

Considering the tunneling effect and the Schottky effect,the metal semiconductor contact is simulated by using self consistent ensemble Monte Carlo method.Under different biases or at different barrier heights,the investigation into the tunneling current indicates that the tunneling effect is of great importance under reverse biases.The Schottky barrier diode current due to Schottky effect is in agreement with the theoretical one.The barrier lowering is found a profound effect on the current transport at the metal semiconductor interface.

Needle-Tunneling法膜系自动设计

综述了Ｎｅｅｄｌｅ和Ｔｕｎｎｅｌｉｎｇ 法膜系自动设计的基本原理，举出它们的应用实例，并且指出一个优秀的光学膜系自动设计程序应该包括Ｎｅｅｄｌｅ 法、Ｔｕｎｎｅｌｉｎｇ 法和传统的优化方法。它们的结合和交叉使用，使我们有可能从单层膜开始设计任意光学性能的多层膜。

Direct Tunneling Currents Through Gate Dielectrics in Deep Submicron MOSFETs

A direct tunneling model through gate dielectric s in CMOS devices in the frame of WKB approximation is reported.In the model,an im proved one-band effective mass approximation is used for the hole quantization, where valence band mixing is taken into account.By comparing to the experiments, the model is demonstrated to be applicable to both electron and hole tunneling c urrents in CMOS devices.The effect of the dispersion in oxide energy gap on the tunneling current is also studied.This model can be further extended to study th e direct tunneling current in future high-k materials.

使用HTTP Tunneling技术实现穿透网络防火墙的通信

近年来,防火墙在网络中得到了广泛的应用。它能够比较有效地防范病毒与黑客的攻击,保护网络的安全。但是也带来了一些不利影响,使一些需要进行网络通信的应用软件系统不能正常工作。介绍一个解决方案,并且重点介绍通过HTTP Tunneling技术使用基于文本的HTTP协议传送二进制数据的方法。

Fabrication of an AlAs/In_(0.53)Ga_ ( 0.47)As/InAs Resonant Tunneling Diode on InP Substrate for High-Speed Circuit Applications

A high performance AlAs/In0.53 Ga0.47 As/InAs resonant tunneling diode （RTD） on InP substrate is fabricated by inductively coupled plasma etching. This RTD has a peak-to-valley current ratio （PVCR） of 7. 57 and a peak current density Jp = 39.08kA/cm^2 under forward bias at room temperature. Under reverse bias, the corresponding values are 7.93 and 34.56kA/cm^2 . A resistive cutoff frequency of 18.75GHz is obtained with the effect of a parasitic probe pad and wire. The slightly asymmetrical current-voltage characteristics with a nominally symmetrical structure are also discussed.

Effectof Neutral Traps on Tunneling Current and SILC in Ultrathin Oxide Layer

The effect of neutral trap on tunneling currentin ultrathin MOSFETs is investigated by num erical analy- sis.The barrier variation arisen by neutral trap in oxide layer is described as a rectangular potential well in the con- duction band of Si O2 .The different barrier variation of an ultrathin metal- oxide- sem iconductor(MOS) structure with oxide thickness of4nm is numerically calculated.It is shown that the effect of neutral trap on tunneling cur- rent can not be neglected.The tunneling current is increased when the neutral trap exists in the oxide layer.This simple m odel can be used to understand the occurring mechanism of stress induced leakage current.

A Model of a Single Electron Transistor of Metallic Tunneling Junctions and Its Validation

Based on the orthodox theory,a model of a single electron transistor （SET） of metallic tunneling junctions is built using the master equation method. Several parameters of the device, such as capacitance, resistance and temperature,are input into the model and thus the I-V curves are attained. These curves are consistent with those from other experiments; therefore, the model is verified. However, there still exists a difference between simulated results and experimental results,mainly comes from the stationary case of the master equation. In other words, precision of simulated results would be increased if the transient case of the master equation is considered. Moreover, the current increases exponentially at higher drain voltages, which is due to the fact that the barrier suppression is caused by the image charge potential.

Low Voltage Flash Memory Cells Using SiGe Quantum Dots for Enhancing F-N Tunneling

A novel flash memory cell with stacked structure （Si substrate/SiGe quantum dots/tunneling oxide/polySi floating gate） is proposed and demonstrated to achieve enhanced F-N tunneling for both programming and erasing. Simulation results indicate the new structure provides high speed and reliability. Experimental results show that the operation voltage can be as much as 4V less than that of conventional full F-N tunneling NAND memory cells. Memory cells with the proposed structure can achieve higher speed, lower voltage, and higher reliability.

Simulation and Experimental Research on a Schottky Gate Resonant Tunneling Transistor

A Schottky gate resonant tunneling transistor （SGRTT） is fabricated. Relying on simulation by ATLAS software,we find that the gate voltages can be used to control the current of SGRTT when the emitter terminal is grounded and a positive bias voltage is applied to the collector terminal. When the collector terminal is grounded, the gate voltages can control the peak voltage. As revealed by measurement results, the reason is that the gate voltages and the electric field distribution on emitter and collector terminal change the distribution of the depletion region.

A Hybrid Random Number Generator Using Single Electron Tunneling Junctions and MOS Transistors

This paper proposes a novel single electron random number generator （RNG）. The generator consists of multiple tunneling junctions （MTJ） and a hybrid single electron transistor （SET）/MOS output circuit. It is an oscillator-based RNG. MTJ is used to implement a high-frequency oscillator, which uses the inherent physical randomness in tunneling events of the MTJ to achieve large frequency drift. The hybrid SET and MOS output circuit is used to amplify and buffer the output signal of the MTJ oscillator. The RNG circuit generates high-quality random digital sequences with a simple structure. The operation speed of this circuit is as high as 1GHz. The circuit also has good driven capability and low power dissipation. This novel random number generator is a promising device for future cryptographic systems and communication applications.