Role of Ga-doping in iron-gallium alloy clusters

The structural and magnetic properties of Fen-mCam （n = 3 - 6, m = 0 - 2; n = 13, m = 0 - 3） alloy clusters have been studied using density functional theory. The substitutional doping is favourable for small clusters with up to six atoms at low Ga concentration and substitutional Ga atoms in 13-atom clusters prefer surface sites. The Ca-doping generally could reduce the energetic stability but enhance the electronic stability of Fe clusters, along with a decrease of the local magnetic moments of Fe atoms around Ca dopants. These findings provide a microscopic insight into Fe-Ga alloys which are well：known magnetostriction materials.

Experimental Analysis of a Pneumatic Drop-on-Demand(DOD)Injection Technology for 3D Printing Using a Gallium-Indium Alloy

Many liquid metals have a high boiling point,strong electrical conductivity,high thermal conductivity,and nontoxic properties,which make them ideal targets for applications in different fields such as optics,microcircuits,electronic switches,micro-electromechanical System(MEMS)devices and 3D printing manufacturing.However,owing to the generally high surface tension of these liquids,achieving uniform micro-droplets is often a challenge due to the inherent difficulties in controlling their size and shape.In this study,a gallium indium alloy(GaIn24.5)has been used in combination with a pneumatic drop-on-demand(DOD)injection technology to carry out a series of experiments.The micro-droplet forming process has been explored for different pressure and pulse width conditions.Uniform metal droplets(diameter 1080μm)have been obtained with a 1.5 kPa jet pressure,100 ms pulse width,and 50%duty ratio.The standard deviation of the measured metal droplets diameter has been found to be approximately 20μm.

Influence of yttrium on the structure and magnetostriction of Fe_(83)Ga_(17) alloy

Polycrystalline Fe83Ga17 alloy rods with various amounts of yttrium were prepared by high vacuum induction melting. It is found that yttrium addition has a significant effect on the structure and magnetostriction of Fes3Ga17 alloy. The small addition of yttrium alters the solidification character and the grain shape of Fe83Ga17 alloy, and as a result, columnar grains with the 〈100〉 preferential direction are pro- duced. Yttrium addition improves the magnetostrictive performance of the as-cast Fes3Ga17 alloy. The magnetostriction values of the as-cast alloy with 0.32at% and 0.64at% yttrium addition go up to 119×10^-6 and 137×10^-6 under 15 MPa compressive stress, respectively. The energy dispersive spectroscopy （EDS） result shows that almost all of the yttrium atoms exist in the Y2Fe17-xGax phase. A small amount of this kind of secondary phase cannot obviously increase the saturate magnetic field.

Microstructure and magnetostrictive performance of NbC-doped <100>oriented Fe-Ga alloys

The〈100〉oriented Fe83Ga17 alloy rods with various NbC contents less than 1at%were prepared by the directional solidification method at a growth rate of 720 mm·h^-1. Low NbC-content was found to affect the oriented grain growth and slightly improve the〈100〉ori-entation. Flat grain boundaries in the alloys with low NbC contents less than 0.2at%became greatly curved at higher NbC contents, and a large amount of Nb-rich precipitates were observed in the alloys with high NbC contents. Small amounts of NbC, less than 0.2at%, resulted in an increase in magnetostrictive strain due to the improvement of the〈100〉orientation, and a high magnetostrictive strain value of 335 ×10^-6 under a pre-stress of 15 MPa was obtained in the 0.1at%NbC-doped alloys. The magnetostrictive performance obviously decreased with the NbC addition higher than 0.5at%, and the strain sensitivity under no pre-stress was lower than that in the binary Fe？Ga alloy.

Chemical Thermodynamic Analysis of Silicon Doping in MOCVD of GaAs System

With chemical thermodynamic method, enthalpies, entropies and heat capacities of (SiH3)nAsH3-n (1&len&le3), (CH3)4-mSiH4-m (1&lem&le4) and their radicals were calculated. Homogeneous reaction equilibrium of 65 gas phase species in SiH4 (or Si2H6) doped MOCVD GaAs by TMG and AsH3 system was analyzed, the relations of gas phase partial pressures with growth temperatures and input partial pressures were calculated. When the gas phase is saturated with a GaAs: Si solid, the gas phase partial pressures and solid phase silicon impurity (SiGa-As, Ga-SiAs, SiGa-SiAs) concentrations were calculated under different growth temperatures and input partial pressures. With the above results, some of the Si doping behavior in MOCVD of GaAs were explained.

New Asymmetric Model for Predicting Ternary Thermodynamic Properties

The prediction of the thermodynamic properties of ternary systems from the properties of their sub-binary systems is of great importance to phase diagram calculations. In the present study, a new asymmetric model which has more clear physical significance has been developed for evaluating the ternary thermodynamic properties from its three binary components. The model is considered to be rigorous in the case where the pseudobinary systems of fixed X2/X3 are regular are regular solution. The application of new model to the prediction of ternary enthalpies of mixing for Bi-Ga-Sn, Au-Ag-Sn and NaCl-KCl-CaCl2 systems shows that the calculated results by new model are closer to experimental data than those by Toop's model.

Microstructure and optoelectronic properties of galliumtitanium-zinc oxide thin films deposited by magnetron sputtering

Gallium-titanium-zinc oxide(GTZO) transparent conducting oxide(TCO) thin films were deposited on glass substrates by radio frequency magnetron sputtering. The dependences of the microstructure and optoelectronic properties of GTZO thin films on Ar gas pressure were observed. The X-ray diffraction(XRD) and scanning electron microscopy(SEM) results show that all the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. With the increment of Ar gas pressure, the microstructure and optoelectronic properties of GTZO thin films will be changed. When Ar gas pressure is 0.4 Pa, the deposited films possess the best crystal quality and optoelectronic properties.

Optimization of top polymer gratings to improve GaN LEDs light transmission

We present a grating model of two-dimensional （2D） rigorous coupled wave analysis （RCWA） to study top diffraction gratings on light-emitting diodes （LEDs）. We compare the integrated-transmission of the non-grating, rectangular-grating, and triangular-grating cases for the same grating period of 6 μm, and show that the triangular grating has the best performance. For the triangular grating with 6-μm period, the LED achieves the highest light transmission at 6-μm grating bottom width and 2.9-μm grating depth. Compared with the non-grating case, the optimized light transmission improvement is about 74.6%. The simulation agrees with the experimental data of the thin polymer grating encapsulated flip-chip （FC） GaN-based LEDs for the light extraction improvement.

Performance testing of log pile photonic crystal fast-fabricated by direct femtosecond laser writing

Great efforts has been made on fabricating photonic crystals （PCs） with photonic band gaps （PBGs） during the past decade. Three-dimensional （3D） log pile PC was fabricated fast by direct femtosecond laser writing in ORMOCER. Qualitative analysis of the errors of PC was investigated using the Image Pro Plus. Surface qualities such as bending, distortion, and surface roughness were shown, and the band gap in the infrared wavelength region was observed. Meanwhile, the theory was experimentally verified that the center of PBG diminishes as the crystal lattice period reduces. Therefore, it is possible to fabricate PCs whose band gap range is from the near-infrared to visible wave band.

GaN-based p–i–n ultraviolet photodetectors with a thin p-type GaN layer on patterned sapphire substrates

We study the performance of GaN-based p i n ultraviolet （UV） photodetectors （PDs） with a 60 nm thin ptype contact layer grown on patterned sapphire substrate （PSS）. The PDs on PSS exhibit a low dark current of -2 pA under a bias of -5 V, a large UV/visible rejection ratio of-7× 10^3, and a high-quantum efficiency of -40% at 365 nm under zero bias. The average quantum efficiency of the PDs still remains above 20% in the deep-UV region from 280 to 360 nm. In addition, the noise characteristics of the PDs are also discussed, and the corresponding specific detectivities limited by the thermal noise and the low-frequency 1/f noise are calculated.

Light extraction of GaN LEDs with 2-D photonic crystal structure

Ultraviolet photo-lithography is employed to introduce two-dimensional （2D） photonic crystal （PC） structure on the top surface of GaN-based light emitting diode （LED）. PC patterns are transferred to 460-rimthick transparent indium tin oxide （ITO） electrode by inductively coupled plasma （ICP） etching. Light intensity of PC-LED can be enhanced by 38% comparing with the one without PC structure. Rigorous coupled wave analysis method is performed to calculate the light transmission spectrum of PC slab. Simulation results indicate that total internal reflect angle which modulated by PC structure has been increased by 7°, which means that the light extraction efficiency is enhanced outstandingly.

Stacking-faults-free zinc blende GaAs/AlGaAs axial heterostructure nanowires during vapor-liquid-solid growth

Pure zinc blende structure GaAs/AlGaAs axial heterostructure nanowires （NWs） are grown by metal organic chemical vapor deposition on GaAs（111） B substrates using Au-catalyzed vapor-liquid-solid mechanism. Al adatom enhances the influence of diameters on NWs growth rate. NWs are grown mainly through the contributions from the direct impingement of the precursors onto the alloy droplets and not so much from adatom diffusion. The results indicate that the droplet acts as a catalyst rather than an adatom collector.

Research on electrical pulse of 20-kV/30-Hz GaAs photoconductive switches

Photoconductive semiconductor switches （PCSSs） are widely used in high power ultra-wideband source applications and precise synchronization control due to their high power low-jitter high-repetition-frequency. In this letter, a 14-mm gap semi-insulating GaAs PCSS biased under 20 kV is triggered by a 1064-nm laser with a repetition frequency of 30 Hz. Although the trigger condition is greater than the threshold of the lock-on effect, the high gain mode is not observed. The results indicate that the high gain mode of the PCSS is quenched by decreasing the remnant voltage of pulsed energy storage capacitor.

Optical properties of 1.3-μm InAs/GaAs quantum dots grown by metal organic chemical vapor deposition

The optical properties of self-assembled InAs quantum dots （QDs） on GaAs substrate grown by metalorganic chemical vapor deposition （MOCVD） are reported. Photoluminescence （PL） measurements prove the good optical quality of InAs QDs, which axe achieved using lower growth temperature and higher InAs coverage. At room temperature, the ground state peak wavelength of PL spectrum and full-width at half-maximum （FWHM） are 1305 nm and 30 meV, respectively, which are obtained as the QDs are finally capped with 5-nm In0.06Ga0.94As strain-reducing layer （SRL）. The PL spectra exhibit two emission peaks at 1305 and 1198 nm, which correspond to the ground state （GS） and the excited state （ES） of the QDs, respectively.

Photonic crystal waveguides and their applications Invited Paper

Two-dimensional （2D） slab photonic crystal waveguides （PCWGs） on silicon-on-insulator （SOI） wafer were designed and fabricated. Full photonic band gap, band gap guided mode, and index guided mode were observed by measuring the transmission spectra. Mini-stop-bands in the PCWG were simulated with different structure parameters. Coupling characteristics of PCWG were investigated theoretically considering the imperfections during the fabrication process. It was found that suppressing power reservation effect can realize both short coupling length and high coupling efficiency.

Investigation of GaN-based dual-wavelength light-emitting diodes with p-type barriers and vertically stacked quantum wells

Designs of p-doped in quantum well （QW） barriers and specific number of vertically stacked QWs are proposed to improve the optical performance of GaN-based dual-wavelength light-emitting diodes （LEDs）. Emission spectra, carrier concentration, electron current density, and internal quantum efficiency （IQE） are studied numerically. Simulation results show that the efficiency droop and the spectrum intensity at the large current injection are improved markedly by using the proposed design. Compared with the conventional LEDs, the uniform spectrum intensity of dual-wavelength luminescence is realized when a specific number of vertically stacked QWs is adopted. Suppression of electron leakage current and the promotion of hole injection efficiency could be one of the main reasons for these improvements.

Feasibility analysis of junction temperature measurement for GaN-based high-power white LEDs by the peak-shift method

Transient thermal impedance of GaN-based high-power white light emitting diodes （LEDs） is created using a thermal transient tester. An electro-thermal simulation shows that LED junction temperature （JT） rises to a very low degree under low duty cycle pulsed current. At the same JT, emission peaks are equivalent at pulsed and continuous currents. Moreover, the difference in peak wavelength when a LED is driven by pulsed and continuous currents initially decreases then increases with increasing pulse width. Thus, selecting an appropriate pulse width decreases errors in JT measurement.

Effects of p-type GaN thickness on optical properties of Ga N-based light-emitting diodes

The influence of p-type Ga N(p Ga N) thickness on the light output power(LOP) and internal quantum efficiency(IQE) of light emitting diode(LED) was studied by experiments and simulations. The LOP of Ga N-based LED increases as the thickness of p Ga N layer decreases from 300 nm to 100 nm, and then decreases as the thickness decreases to 50 nm. The LOP of LED with 100-nm-thick pG a N increases by 30.9% compared with that of the conventional LED with 300-nm-thick p Ga N. The variation trend of IQE is similar to that of LOP as the decrease of Ga N thickness. The simulation results demonstrate that the higher light efficiency of LED with 100-nm-thick p Ga N is ascribed to the improvements of the carrier concentrations and recombination rates.

Fabrication of high-quality ZnS buffer and its application in Cd-free CIGS solar cells

This paper provides the fabrication of Cd-free Cu(In,Ga)Se2(CIGS) solar cells on soda-lime glass substrates. A high quality ZnS buffer layer is grown by chemical bath deposition(CBD) process with ZnSO4-NH3-SC(NH2)2 aqueous solution system. The X-ray diffraction(XRD) result shows that the as-deposited ZnS film has cubic(111) and(220) diffraction peaks. Scanning electron microscope(SEM) images indicate that the ZnS film has a dense and compact surface with good crystalline quality. Transmission measurement shows that the optical transmittance is about 90% when the wavelength is beyond 500 nm. The bandgap(Eg) value of the as-deposited ZnS film is estimated to be 3.54 eV. Finally, a competitive efficiency of 11.06% is demonstrated for the Cd-free CIGS solar cells with ZnS buffer layer after light soaking.