The temperature dependence of some performance of 6H SiC unipolar power devices is analyzed theoretically.By employing the temperature dependent ionization coefficient and mobility of a silicon carbide,the analytica...The temperature dependence of some performance of 6H SiC unipolar power devices is analyzed theoretically.By employing the temperature dependent ionization coefficient and mobility of a silicon carbide,the analytical expressions of the temperature dependent performance,such as breakdown characteristics and on resistance of 6H SiC unipolar power devices are derived in a closed form.The analytical results are compared with the experimental results,with good accordance found in the breakdown characteristics.展开更多
Power semiconductor devices are the key technology driver for all power electronic system engineering.The main development trend for power devices is going towards higher power handling capability at even smaller Sivo...Power semiconductor devices are the key technology driver for all power electronic system engineering.The main development trend for power devices is going towards higher power handling capability at even smaller Sivolume, faster switching performance,advanced ruggedness and reliability at elevated operating temperature and extended SOA diagrams.To cover all applications in the various fields of industry,consumer,computing and automotive the device optimization is different for low voltage power MOSFET,for high voltage MOSFET,for plasma modulated devices and components based on wide bandgap(WB) material.In the paper,the main development trends will be described and discussed.展开更多
A triggered surge protective device is designed and its discharge characteristics axe studied. The experimental results show that the triggered surge protective device has excellent surge protective characteristics. W...A triggered surge protective device is designed and its discharge characteristics axe studied. The experimental results show that the triggered surge protective device has excellent surge protective characteristics. When the gap distance is 5 mm, p. d is 90 Pa.mm and without an active energy trigger circuit, the DC breakdown voltage of the triggered surge protective device is 2.32 kV and the pulse breakdown voltage is 5.75 kV. Therefore, the pulse voltage ratio, which is defined as the specific value of pulse breakdown voltage and DC breakdown voltage, is 2.48. With a semiconductor ZnO flashover trigger device and an active energy coupling trigger circuit, the pulse breakdown voltage can be reduced to 3.32 kV, the pulse voltage ratio is 1.43 and the response time is less than 100 ns. These results are helpful in laying a theoretical foundation for further studies on triggered surge protective devices.展开更多
A hollow cathode surge protective gap （HCSPG） was designed, and the discharge characteristics was investigated in an air and nitrogen gas environment. For both the gap spacing D and the hole diameter Ф of HCSPG of ...A hollow cathode surge protective gap （HCSPG） was designed, and the discharge characteristics was investigated in an air and nitrogen gas environment. For both the gap spacing D and the hole diameter Ф of HCSPG of 3 mm, the voltage protective value Up of HCSPG is about 3.5 kV and its converting time tc exceeds 100 ns at an air pressure from 10 Pa to 100 Pa. The maximum converting time tc from glow to arc discharging reaches 1600 ns at an air pressure of 100 Pa, while the minimum converting time tc is 120 ns at 10 Pa. For a triggered HCSPG, Up is reduced to about 1.6 kV while the converting time is 120 ns with a semiconductor trigger device and 50 ns with a dielectric porcelain trigger device under an air pressure of 100 Pa.展开更多
Given the demand for constantly scaling micro- electronic devices to ever smaller dimensions, a SiO2 gate dielectric was substituted with a higher dielectric-constant material, Hf（Zr）O2, in order to minimize current...Given the demand for constantly scaling micro- electronic devices to ever smaller dimensions, a SiO2 gate dielectric was substituted with a higher dielectric-constant material, Hf（Zr）O2, in order to minimize current leakage through dielectric thin film. However, upon interfacing with high dielectric constant （high-κ） dielectrics, the electron mobility in the conventional Si channel degrades due to Coulomb scattering, surface-roughness scattering, remotephonon scattering, and dielectric-charge trapping.Ⅲ-Ⅴ and Ge are two promising candidates with superior mobility over Si. Nevertheless, Hf（Zr）O2/Ⅲ-Ⅴ（Ge） has much more complicated interface bonding than Si-based interfaces. Successful fabrication of a high-quality device critically depends on understanding and engineering the bonding configurations at Hf（Zr）O2/Ⅲ-Ⅴ（Ge） interfaces for the optimal design of device interfaces. Thus, an accurate atomic insight into the interface bonding and mechanism of interface gap states formation becomes essential. Here, we utilize first- principle calculations to investigate the interface between HfO2 and GaAs. Our study shows that As--As dimer bonding, Ga partial oxidation （between 3＋ and 1＋） and Ga- dangling bonds constitute the major contributions to gap states. These findings provide insightful guidance for optimum interface passivation.展开更多
In this article, we reported the synthesis and characterization of a novel silafluorene-based host material, 1,3-bis（5-methyl-5H- dibenzo[b,d]silol-5-yl）benzene （Me-DBSiB）, for blue phosphorescent organic light-em...In this article, we reported the synthesis and characterization of a novel silafluorene-based host material, 1,3-bis（5-methyl-5H- dibenzo[b,d]silol-5-yl）benzene （Me-DBSiB）, for blue phosphorescent organic light-emitting devices （PHOLEDs）. The Me- DBSiB was constructed by linking 9-methyl-9-silafluorene units to the phenyl framework through the sp3-hybridized silica atom to maintain high singlet and triplet energy, as well as to enhance thermal and photo-stability. The calculated result shows that the phenyl core does not contribute to both the highest occupied molecular orbital and lowest unoccupied molecular orbital. Wide optical energy gap of 4.1 eV was achieved. When the Me-DBSiB was used as the host and iridium （Ⅲ） bis[（4,6-difluorophenyl）pyridinato-N,C2＇]picolate （Firpic） as the guest, a maximum current efficiency was 14.8 cd/A, lower than the counterpart of 1,3-bis（9-carbazolyl）benzene （28 cd/A）. The unbalanced barrier for electron and hole injection to host layer may be responsible for low efficiency. Even so, our results show that silafluorene moieties are promising building blocks for constructing wide-energy-gap host materials.展开更多
文摘The temperature dependence of some performance of 6H SiC unipolar power devices is analyzed theoretically.By employing the temperature dependent ionization coefficient and mobility of a silicon carbide,the analytical expressions of the temperature dependent performance,such as breakdown characteristics and on resistance of 6H SiC unipolar power devices are derived in a closed form.The analytical results are compared with the experimental results,with good accordance found in the breakdown characteristics.
文摘Power semiconductor devices are the key technology driver for all power electronic system engineering.The main development trend for power devices is going towards higher power handling capability at even smaller Sivolume, faster switching performance,advanced ruggedness and reliability at elevated operating temperature and extended SOA diagrams.To cover all applications in the various fields of industry,consumer,computing and automotive the device optimization is different for low voltage power MOSFET,for high voltage MOSFET,for plasma modulated devices and components based on wide bandgap(WB) material.In the paper,the main development trends will be described and discussed.
基金supported by National Natural Science Foundation of China(No.51177131)the New Century Talent Foundation of Ministry of Education of China(NCET-08-0438)
文摘A triggered surge protective device is designed and its discharge characteristics axe studied. The experimental results show that the triggered surge protective device has excellent surge protective characteristics. When the gap distance is 5 mm, p. d is 90 Pa.mm and without an active energy trigger circuit, the DC breakdown voltage of the triggered surge protective device is 2.32 kV and the pulse breakdown voltage is 5.75 kV. Therefore, the pulse voltage ratio, which is defined as the specific value of pulse breakdown voltage and DC breakdown voltage, is 2.48. With a semiconductor ZnO flashover trigger device and an active energy coupling trigger circuit, the pulse breakdown voltage can be reduced to 3.32 kV, the pulse voltage ratio is 1.43 and the response time is less than 100 ns. These results are helpful in laying a theoretical foundation for further studies on triggered surge protective devices.
基金supported by the Program for New Century Excellent Talents in University of China (NCET-08-0438)innovation fund of Xi'an Jiaotong University of China (2007S202)
文摘A hollow cathode surge protective gap （HCSPG） was designed, and the discharge characteristics was investigated in an air and nitrogen gas environment. For both the gap spacing D and the hole diameter Ф of HCSPG of 3 mm, the voltage protective value Up of HCSPG is about 3.5 kV and its converting time tc exceeds 100 ns at an air pressure from 10 Pa to 100 Pa. The maximum converting time tc from glow to arc discharging reaches 1600 ns at an air pressure of 100 Pa, while the minimum converting time tc is 120 ns at 10 Pa. For a triggered HCSPG, Up is reduced to about 1.6 kV while the converting time is 120 ns with a semiconductor trigger device and 50 ns with a dielectric porcelain trigger device under an air pressure of 100 Pa.
基金supported by the National Natural Science Foundation of China (11304161, 11104148, and 51171082)the Tianjin Natural Science Foundation (13JCYBJC41100 and 14JCZDJC37700)+3 种基金the National Basic Research Program of China (973 Program) (2014CB931703)Specialized Research Fund for the Doctoral Program of Higher Education (20110031110034)the Fundamental Research Funds for the Central Universitiessupported by the Global Frontier Center for Multiscale Energy Systems at Seoul National University in Korea
文摘Given the demand for constantly scaling micro- electronic devices to ever smaller dimensions, a SiO2 gate dielectric was substituted with a higher dielectric-constant material, Hf（Zr）O2, in order to minimize current leakage through dielectric thin film. However, upon interfacing with high dielectric constant （high-κ） dielectrics, the electron mobility in the conventional Si channel degrades due to Coulomb scattering, surface-roughness scattering, remotephonon scattering, and dielectric-charge trapping.Ⅲ-Ⅴ and Ge are two promising candidates with superior mobility over Si. Nevertheless, Hf（Zr）O2/Ⅲ-Ⅴ（Ge） has much more complicated interface bonding than Si-based interfaces. Successful fabrication of a high-quality device critically depends on understanding and engineering the bonding configurations at Hf（Zr）O2/Ⅲ-Ⅴ（Ge） interfaces for the optimal design of device interfaces. Thus, an accurate atomic insight into the interface bonding and mechanism of interface gap states formation becomes essential. Here, we utilize first- principle calculations to investigate the interface between HfO2 and GaAs. Our study shows that As--As dimer bonding, Ga partial oxidation （between 3＋ and 1＋） and Ga- dangling bonds constitute the major contributions to gap states. These findings provide insightful guidance for optimum interface passivation.
基金supported by the Fundamental Research Funds for the Central Universities(08143034)the National Basic Research Program of China(2013CB328705)the National Natural Science Foundation of China(61275034,61106123)
文摘In this article, we reported the synthesis and characterization of a novel silafluorene-based host material, 1,3-bis（5-methyl-5H- dibenzo[b,d]silol-5-yl）benzene （Me-DBSiB）, for blue phosphorescent organic light-emitting devices （PHOLEDs）. The Me- DBSiB was constructed by linking 9-methyl-9-silafluorene units to the phenyl framework through the sp3-hybridized silica atom to maintain high singlet and triplet energy, as well as to enhance thermal and photo-stability. The calculated result shows that the phenyl core does not contribute to both the highest occupied molecular orbital and lowest unoccupied molecular orbital. Wide optical energy gap of 4.1 eV was achieved. When the Me-DBSiB was used as the host and iridium （Ⅲ） bis[（4,6-difluorophenyl）pyridinato-N,C2＇]picolate （Firpic） as the guest, a maximum current efficiency was 14.8 cd/A, lower than the counterpart of 1,3-bis（9-carbazolyl）benzene （28 cd/A）. The unbalanced barrier for electron and hole injection to host layer may be responsible for low efficiency. Even so, our results show that silafluorene moieties are promising building blocks for constructing wide-energy-gap host materials.
