This paper is to discuss the sensing characteristics of SnO_2 semiconductor components in which Pr_6O_(11) is added.When experimenting under 11 gases of CH_3COCH_3,C_2H_5OH.C_6H_5CH_3,H_2,NH_3,CO, CO_2 CH_4,C_4H_10,n...This paper is to discuss the sensing characteristics of SnO_2 semiconductor components in which Pr_6O_(11) is added.When experimenting under 11 gases of CH_3COCH_3,C_2H_5OH.C_6H_5CH_3,H_2,NH_3,CO, CO_2 CH_4,C_4H_10,n—C_6H_(14)and n—C_7H_(16),we find that the components have selectivity to CH_3COCH_3, C_2H_5OH and that the ideal amount of Pr_6O_(11) in the components is about I.Owt%.The experiments also show that with the increase of the amount of Pr_6O_(11),the ideal working temperature,the response and restoration time decrease.展开更多
In order to simplify the fabrication process,distribute the temperature uniformly and reduce the power consumption of the micro-hotplate（MHP） gas sensor,a planar-type gas sensor based on SnO2 thin film with suspende...In order to simplify the fabrication process,distribute the temperature uniformly and reduce the power consumption of the micro-hotplate（MHP） gas sensor,a planar-type gas sensor based on SnO2 thin film with suspended structure is designed through a MEMS process.Steady-state thermal analysis of the gas sensor and the closed membrane type sensor where the membrane overlaps the Si substrate is carried out with the finite element model,and it is shown that the suspended planar-type gas sensor has a more homogeneous temperature distribution and a lower power consumption.When the maximum temperature on the sensor reaches 383℃,the power consumption is only 7 mW,and the temperature gradient across the thin film is less than 14℃.To overcome the fragility of the suspended beams,a novel fabrication process in which the deposition of the gas sensing film occurs prior to the formation of suspended beams is proposed.The back side of the Si substrate is etched through deep reactive ion etching（DRIE） to avoid chemical pollution of the front side.The fabrication steps in which only four masks are used for the photolithography are described in detail.The Fe doped SnO2 thin film synthesized by sol-gel spin-coating is used as the gas sensing element.The device is tested on hydrogen and exhibits satisfactory sensing performance.The sensitivity increases with the rise of the concentration from 50×10-6 to 2000×10-6,and reaches about 30 at 2000×10-6.展开更多
文摘This paper is to discuss the sensing characteristics of SnO_2 semiconductor components in which Pr_6O_(11) is added.When experimenting under 11 gases of CH_3COCH_3,C_2H_5OH.C_6H_5CH_3,H_2,NH_3,CO, CO_2 CH_4,C_4H_10,n—C_6H_(14)and n—C_7H_(16),we find that the components have selectivity to CH_3COCH_3, C_2H_5OH and that the ideal amount of Pr_6O_(11) in the components is about I.Owt%.The experiments also show that with the increase of the amount of Pr_6O_(11),the ideal working temperature,the response and restoration time decrease.
基金The National Natural Science Foundation of China (No.58175122)the Natural Science Foundation of Jiangsu Province (No.BK2007185)+1 种基金the Natural Science Foundation of Higher Education Institutions of Jiangsu Province(No.07KJB460044)the Scientific Research Innovation Project for College Graduates in Jiangsu Province (No.CXZZ11_0340)
文摘In order to simplify the fabrication process,distribute the temperature uniformly and reduce the power consumption of the micro-hotplate（MHP） gas sensor,a planar-type gas sensor based on SnO2 thin film with suspended structure is designed through a MEMS process.Steady-state thermal analysis of the gas sensor and the closed membrane type sensor where the membrane overlaps the Si substrate is carried out with the finite element model,and it is shown that the suspended planar-type gas sensor has a more homogeneous temperature distribution and a lower power consumption.When the maximum temperature on the sensor reaches 383℃,the power consumption is only 7 mW,and the temperature gradient across the thin film is less than 14℃.To overcome the fragility of the suspended beams,a novel fabrication process in which the deposition of the gas sensing film occurs prior to the formation of suspended beams is proposed.The back side of the Si substrate is etched through deep reactive ion etching（DRIE） to avoid chemical pollution of the front side.The fabrication steps in which only four masks are used for the photolithography are described in detail.The Fe doped SnO2 thin film synthesized by sol-gel spin-coating is used as the gas sensing element.The device is tested on hydrogen and exhibits satisfactory sensing performance.The sensitivity increases with the rise of the concentration from 50×10-6 to 2000×10-6,and reaches about 30 at 2000×10-6.
