Lead halide hybrid perovskites(LHP)have emerged as one of the most promising photovoltaic materials for their remarkable solar energy conversion ability.The transportation of the photoinduced carriers in LHP could scr...Lead halide hybrid perovskites(LHP)have emerged as one of the most promising photovoltaic materials for their remarkable solar energy conversion ability.The transportation of the photoinduced carriers in LHP could screen the defect recombination with the help of the large polaron formation.However,the physical insight of the relationship between the superior optical-electronic performance of perovskite and its polaron dynamics related to the electron-lattice strong coupling induced by the substitution engineering is still lack of investigation.Here,the bandgap modulated thin films ofα-FAPbI_(3)with different element substitution is investigated by the time resolved Terahertz spectroscopy.We find the polaron recombination dynamics could be prolonged in LHP with a relatively smaller bandgap,even though the formation of polaron will not be affected apparently.Intuitively,the large polaron mobility in(FAPb I_(3))0.95(MAPbI_(3))0.05thin film is~30%larger than that in(FAPb I_(3))0.85(MAPbBr_(3))0.15.The larger mobility in(FAPb I_(3))0.95(MAPb I_(3))0.05could be assigned to the slowing down of the carrier scattering time.Therefore,the physical origin of the higher carrier mobility in the(FAPb I_(3))0.95(MAPbI_(3))0.05should be related with the lattice distortion and enhanced electron–phonon coupling induced by the substitution.In addition,(FAPbI_(3))0.95(MAPbI_(3))0.05will lose fewer active carriers during the polaron cooling process than that in(FAPb I_(3))0.85(MAPbBr_(3)),indicating lower thermal dissipation in(FAPbI_(3))0.95(MAPbI_(3))0.05.Our results suggest that besides the smaller bandgap,the higher polaron mobility improved by the substitution engineering inα-FAPbI_(3)can also be an important factor for the high PCE of the black phaseα-FAPbI_(3)based solar cell devices.展开更多
Self-heating in a multifinger A1GaN/GaN high electron mobility transistor （HEMT） is investigated by micro-Raman spectroscopy, The device temperature is probed on the die as a function of applied bias. The operating ...Self-heating in a multifinger A1GaN/GaN high electron mobility transistor （HEMT） is investigated by micro-Raman spectroscopy, The device temperature is probed on the die as a function of applied bias. The operating temperature of the A1GaN/GaN HEMT is estimated from the calibration curve of a passively heated A1GaN/GaN structure. A linear increase of junction temperature is observed when direct current dissipated power is increased. When the power dissipation is 12.75 W at a drain voltage of 15 V, a peak temperature of 69.1 ℃ is observed at the gate edge on the drain side of the central finger. The position of the highest temperature corresponds to the high-field region at the gate edge.展开更多
Due to its complicated matrix effects, rapid quantitative analysis of chromium in agricultural soils is difficult without the concentration gradient samples by laser-induced breakdown spectroscopy. To improve the anal...Due to its complicated matrix effects, rapid quantitative analysis of chromium in agricultural soils is difficult without the concentration gradient samples by laser-induced breakdown spectroscopy. To improve the analysis speed and accuracy, two calibration models are built with the support vector machine method： one considering the whole spectra and the other based on the segmental spectra input. Considering the results of the multiple linear regression analysis, three segmental spectra are chosen as the input variables of the support vector regression （SVR） model. Compared with the results of the SVR model with the whole spectra input, the relative standard error of prediction is reduced from 3.18% to 2.61% and the running time is saved due to the decrease in the number of input variables, showing the robustness in rapid soil analysis without the concentration gradient samples.展开更多
基金supported by the National Natural Science Foundation of China(Nos.92050203,61905264,61925507,61875211,61674023,62005296,and 62105347)the National Key R&D Program of China 2017YFE0123700+1 种基金Shanghai Pilot Program for Basic Research(22JC1403200)the CAS Interdisciplinary Innovation Team。
文摘Lead halide hybrid perovskites(LHP)have emerged as one of the most promising photovoltaic materials for their remarkable solar energy conversion ability.The transportation of the photoinduced carriers in LHP could screen the defect recombination with the help of the large polaron formation.However,the physical insight of the relationship between the superior optical-electronic performance of perovskite and its polaron dynamics related to the electron-lattice strong coupling induced by the substitution engineering is still lack of investigation.Here,the bandgap modulated thin films ofα-FAPbI_(3)with different element substitution is investigated by the time resolved Terahertz spectroscopy.We find the polaron recombination dynamics could be prolonged in LHP with a relatively smaller bandgap,even though the formation of polaron will not be affected apparently.Intuitively,the large polaron mobility in(FAPb I_(3))0.95(MAPbI_(3))0.05thin film is~30%larger than that in(FAPb I_(3))0.85(MAPbBr_(3))0.15.The larger mobility in(FAPb I_(3))0.95(MAPb I_(3))0.05could be assigned to the slowing down of the carrier scattering time.Therefore,the physical origin of the higher carrier mobility in the(FAPb I_(3))0.95(MAPbI_(3))0.05should be related with the lattice distortion and enhanced electron–phonon coupling induced by the substitution.In addition,(FAPbI_(3))0.95(MAPbI_(3))0.05will lose fewer active carriers during the polaron cooling process than that in(FAPb I_(3))0.85(MAPbBr_(3)),indicating lower thermal dissipation in(FAPbI_(3))0.95(MAPbI_(3))0.05.Our results suggest that besides the smaller bandgap,the higher polaron mobility improved by the substitution engineering inα-FAPbI_(3)can also be an important factor for the high PCE of the black phaseα-FAPbI_(3)based solar cell devices.
基金Project supported by the National Basic Research Program of China (Grant No. 2011CBA00600)the National Natural Science Foundation of China (Grant No. 61106106)the Fundamental Research Funds for the Central Universities, China (Grant No. K50510250006)
文摘Self-heating in a multifinger A1GaN/GaN high electron mobility transistor （HEMT） is investigated by micro-Raman spectroscopy, The device temperature is probed on the die as a function of applied bias. The operating temperature of the A1GaN/GaN HEMT is estimated from the calibration curve of a passively heated A1GaN/GaN structure. A linear increase of junction temperature is observed when direct current dissipated power is increased. When the power dissipation is 12.75 W at a drain voltage of 15 V, a peak temperature of 69.1 ℃ is observed at the gate edge on the drain side of the central finger. The position of the highest temperature corresponds to the high-field region at the gate edge.
基金Supported by the National High-Technology Research and Development Program of China under Grant Nos 2014AA06A513 and 2013AA065502the National Natural Science Foundation of China under Grant No 61378041the Anhui Province Outstanding Youth Science Fund of China under Grant No 1508085JGD02
文摘Due to its complicated matrix effects, rapid quantitative analysis of chromium in agricultural soils is difficult without the concentration gradient samples by laser-induced breakdown spectroscopy. To improve the analysis speed and accuracy, two calibration models are built with the support vector machine method： one considering the whole spectra and the other based on the segmental spectra input. Considering the results of the multiple linear regression analysis, three segmental spectra are chosen as the input variables of the support vector regression （SVR） model. Compared with the results of the SVR model with the whole spectra input, the relative standard error of prediction is reduced from 3.18% to 2.61% and the running time is saved due to the decrease in the number of input variables, showing the robustness in rapid soil analysis without the concentration gradient samples.
