A NFFP HVI structure which implements high breakdown voltage without using additional FFP and process steps is proposed in this paper. An 850 V high voltage half bridge gate drive IC with the NFFP HVI structure is exp...A NFFP HVI structure which implements high breakdown voltage without using additional FFP and process steps is proposed in this paper. An 850 V high voltage half bridge gate drive IC with the NFFP HVI structure is experimentally realized using a thin epitaxial BCD process. Compared with the MFFP HVI structure, the proposed NFFP HVI structure shows simpler process and lower cost. The high side offset voltage in the half bridge gate drive IC with the NFFP HVI structure is almost as same as that with the self-shielding structure.展开更多
Rotor chopper control is a simple and effective drive method for induction motor. This paper presents a novel IGBT chopper topology,which can both adjust rotor resistance and protect IGBT efficiently. Investigation on...Rotor chopper control is a simple and effective drive method for induction motor. This paper presents a novel IGBT chopper topology,which can both adjust rotor resistance and protect IGBT efficiently. Investigation on the quasi transient state of the rotor rectifying circuit is made, and a nonlinear mapping between the equivalent resistance and the duty cycle is deduced. Furthermore, the method for determining the magnitude of the external resistor is introduced.展开更多
Based on the idea that a squeezing process can be thought of as a total cumulative effect of a large number of tiny squeezing processes, we define a squeeze-like operator with a time-dependent squeeze parameter. Apply...Based on the idea that a squeezing process can be thought of as a total cumulative effect of a large number of tiny squeezing processes, we define a squeeze-like operator with a time-dependent squeeze parameter. Applying this operator to and combining with a system which includes a two-photon interaction between two atoms and an initial vacuum cavity field, and resorting to a resonant strong driving classical field, we obtain an unconventional geometric phase gate with a shorter gating time.展开更多
The insulated gate bipolar transistor(IGBT) has become the most popular controllable power switching device in the design of power electronics industry.As the interface of power circuit and control circuit in power so...The insulated gate bipolar transistor(IGBT) has become the most popular controllable power switching device in the design of power electronics industry.As the interface of power circuit and control circuit in power source, the IGBT drive circuit should be with short transition time and the function of isolating safely and monitoring correctly the short-circuit and over-voltage fault.This paper presents the short-circuit protection theory and relative parameter selecting rules,based on the research on 2QD30A17K-I,the representative of high voltage and high power driver.展开更多
基金This work was supported by the National Nature Science Foundation of China under Grant No.60436030.
文摘A NFFP HVI structure which implements high breakdown voltage without using additional FFP and process steps is proposed in this paper. An 850 V high voltage half bridge gate drive IC with the NFFP HVI structure is experimentally realized using a thin epitaxial BCD process. Compared with the MFFP HVI structure, the proposed NFFP HVI structure shows simpler process and lower cost. The high side offset voltage in the half bridge gate drive IC with the NFFP HVI structure is almost as same as that with the self-shielding structure.
文摘Rotor chopper control is a simple and effective drive method for induction motor. This paper presents a novel IGBT chopper topology,which can both adjust rotor resistance and protect IGBT efficiently. Investigation on the quasi transient state of the rotor rectifying circuit is made, and a nonlinear mapping between the equivalent resistance and the duty cycle is deduced. Furthermore, the method for determining the magnitude of the external resistor is introduced.
基金Project supported by the National Natural Science Foundation of China （Grant No 60667001）.
文摘Based on the idea that a squeezing process can be thought of as a total cumulative effect of a large number of tiny squeezing processes, we define a squeeze-like operator with a time-dependent squeeze parameter. Applying this operator to and combining with a system which includes a two-photon interaction between two atoms and an initial vacuum cavity field, and resorting to a resonant strong driving classical field, we obtain an unconventional geometric phase gate with a shorter gating time.
文摘The insulated gate bipolar transistor(IGBT) has become the most popular controllable power switching device in the design of power electronics industry.As the interface of power circuit and control circuit in power source, the IGBT drive circuit should be with short transition time and the function of isolating safely and monitoring correctly the short-circuit and over-voltage fault.This paper presents the short-circuit protection theory and relative parameter selecting rules,based on the research on 2QD30A17K-I,the representative of high voltage and high power driver.
