The electronic properties and transport properties of MoTe2/SnS2 heterostructure Tunneling FETs are investigated by the density functional theory coupled with non-equilibrium Green’s function method.Two dimensional(2...The electronic properties and transport properties of MoTe2/SnS2 heterostructure Tunneling FETs are investigated by the density functional theory coupled with non-equilibrium Green’s function method.Two dimensional(2D)monolayer MoTe2 and SnS2 are combined to a vertical van der Waals heterojunction.A small staggered band gap is formed in the overlap region,while larger gaps remain in the underlap source and drain regions of monolayer MoTe2 and SnS2 respectively.Such a type-II heterojunction is favorable for tunneling FET.Furthermore,we suggest short stack length and large gate-to-drain overlap to enhance the on-state current suppress the leakage current respectively.The numerical results show that at a low drain to source voltage Vds=0.05V,On/Off current ratio can reach 108 and the On-state currents is over 20μA/μm for ntype devices.Our results present that van der Waals heterostructure TFETs can be potential candidate as next generation ultra-steep subthreshold and low-power electronic applications.展开更多
基金the Training Program of the Major Research Plan of the National Natural Science Foundation of China(61774168,91964103)and the MOST(2016YFA0202300).
文摘The electronic properties and transport properties of MoTe2/SnS2 heterostructure Tunneling FETs are investigated by the density functional theory coupled with non-equilibrium Green’s function method.Two dimensional(2D)monolayer MoTe2 and SnS2 are combined to a vertical van der Waals heterojunction.A small staggered band gap is formed in the overlap region,while larger gaps remain in the underlap source and drain regions of monolayer MoTe2 and SnS2 respectively.Such a type-II heterojunction is favorable for tunneling FET.Furthermore,we suggest short stack length and large gate-to-drain overlap to enhance the on-state current suppress the leakage current respectively.The numerical results show that at a low drain to source voltage Vds=0.05V,On/Off current ratio can reach 108 and the On-state currents is over 20μA/μm for ntype devices.Our results present that van der Waals heterostructure TFETs can be potential candidate as next generation ultra-steep subthreshold and low-power electronic applications.
