Gates joint locally connected network for accurate and robust reconstruction in optical molecular tomography

Optical molecular tomography(OMT)is a potential pre-clinical molecular imaging technique with applications in a variety of biomedical areas,which can provide non-invasive quantitative three-dimensional(3D)information regarding tumor distribution in living animals.The construction of optical transmission models and the application of reconstruction algorithms in traditional model-based reconstruction processes have affected the reconstruction results,resulting in problems such as low accuracy,poor robustness,and long-time consumption.Here,a gates joint locally connected network(GLCN)method is proposed by establishing the mapping relationship between the inside source distribution and the photon density on surface directly,thus avoiding the extra time consumption caused by iteration and the reconstruction errors caused by model inaccuracy.Moreover,gates module was composed of the concatenation and multiplication operators of three different gates.It was embedded into the network aiming at remembering input surface photon density over a period and allowing the network to capture neurons connected to the true source selectively by controlling three different gates.To evaluate the performance of the proposed method,numerical simulations were conducted,whose results demonstrated good performance in terms of reconstruction positioning accuracy and robustness.

引入上下文信息和Attention Gate的GUS-YOLO遥感目标检测算法

目前基于通用YOLO系列的遥感目标检测算法存在并未充分利用图像的全局上下文信息,在特征融合金字塔部分并未充分考虑缩小融合特征之间的语义鸿沟、抑制冗余信息干扰的缺点。在结合YOLO算法优点的基础上提出GUS-YOLO算法,其拥有一个能够充分利用全局上下文信息的骨干网络Global Backbone。除此之外,该算法在融合特征金字塔自顶向下的结构中引入Attention Gate模块,可以突出必要的特征信息,抑制冗余信息。另外,为Attention Gate模块设计了最佳的网络结构,提出了网络的特征融合结构U-Net。最后,为克服ReLU函数可能导致模型梯度不再更新的问题,该算法将Attention Gate模块的激活函数升级为可学习的SMU激活函数,提高模型鲁棒性。在NWPU VHR-10遥感数据集上,该算法相较于YOLOV7算法取得宽松指标mAP^(0.50)1.64个百分点和严格指标mAP^(0.75)9.39个百分点的性能提升。相较于目前主流的七种检测算法,该算法取得较好的检测性能。

An integrated split and dummy gates MOSFET with fast turn-off and reverse recovery characteristics

A power MOSFET with integrated split gate and dummy gate(SD-MOS) is proposed and demonstrated by the TCAD SENTAURUS.The split gate is surrounded by the source and shielded by the dummy gate.Consequently,the coupling area between the split gate and the drain electrode is reduced,thus the gate-to-drain charge(Q_(GD)),reverse transfer capacitance(C_(RSS)) and turn-off loss(E_(off)) are significantly decreased.Moreover,the MOS-channel diode is controlled by the dummy gate with ultra-thin gate oxide t_(ox),which can be turned on before the parasitic P-base/N-drift diode at the reverse conduction,then the majority carriers are injected to the N-drift to attenuate the minority injection.Therefore,the reverse recovery charge(Q_(RR)),time(T_(RR)) and peak current(I_(RRM)) are effectively reduced at the reverse freewheeling state.Additionally,the specific on-resistance(R_(on,sp)) and breakdown voltage(BV) are also studied to evaluate the static properties of the proposed SD-MOS.The simulation results show that the Q_(GD) of 6 nC/cm^(2),the C_(RSS) of 1.1 pF/cm^(2) at the V_(DS) of 150 V,the QRR of 1.2 μC/cm^(2) and the R_(on,sp) of 8.4 mΩ·cm^(2) are obtained,thus the figures of merit(FOM) including Q_(GD) ×R_(on,sp) of50 nC·mΩ,E_(off) × R_(on,sp) of 0.59 mJ·mΩ and the Q_(RR) × R_(on,sp) of 10.1 μC·mΩ are achieved for the proposed SD-MOS.

Skyrmion-based logic gates controlled by electric currents in synthetic antiferromagnet

Skyrmions in synthetic antiferromagnetic(SAF) systems have attracted much attention in recent years due to their superior stability, high-speed mobility, and completely compensated skyrmion Hall effect. They are promising building blocks for the next generation of magnetic storage and computing devices with ultra-low energy and ultra-high density.Here, we theoretically investigate the motion of a skyrmion in an SAF bilayer racetrack and find the velocity of a skyrmion can be controlled jointly by the edge effect and the driving force induced by the spin current. Furthermore, we propose a logic gate that can realize different logic functions of logic AND, OR, NOT, NAND, NOR, and XOR gates. Several effects including the spin–orbit torque, the skyrmion Hall effect, skyrmion–skyrmion repulsion, and skyrmion–edge interaction are considered in this design. Our work may provide a way to utilize the SAF skyrmion as a versatile information carrier for future energy-efficient logic gates.

Thermal spin molecular logic gates modulated by an electric field

Logic gates are fundamental structural components in all modern digital electronic devices. Here, nonequilibrium Green's functions are incorporated with the density functional theory to verify the thermal spin transport features of the single-molecule spintronic devices constructed by a single molecule in series or parallel connected with graphene nanoribbons electrodes. Our calculations demonstrate that the electric field can manipulate the spin-polarized current. Then, a complete set of thermal spin molecular logic gates are proposed, including AND, OR, and NOT gates. The mentioned logic gates enable different designs of complex thermal spin molecular logic functions and facilitate the electric field control of thermal spin molecular devices.

基于GRU-DRSN的双通道人体活动识别

人体活动识别(human activity recognizition, HAR)在医疗、军工、智能家居等领域有很大的应用空间。传统机器学习方法特征提取难度较大且精度不高。针对上述问题并结合传感器时序特性,提出了一种融合CBAM(convolutional block attention module)注意力机制的GRU-DRSN双通道并行模型,有效避免了传统串行模型因网络深度加深引起梯度爆炸和消失问题。同时并行结构使得两条支路具有相同的优先级,使用深度残差收缩网络(deep residual shrinkage network, DRSN)提取数据的深层空间特征,同时使用门控循环结构(gated recurrent unit, GRU)学习活动样本在时间序列上的特征,同时进行提取样本不同维度的特征,并通过CBAM模块进行特征的权重分配,最后通过Softmax层进行识别,实现了端对端的人体活动识别。使用公开数据集(wireless sensor data mining, WISDM)进行验证,模型平均精度达到了97.6%,与传统机器学习模型和前人所提神经网络模型相比,有更好的识别效果。

基于稀疏环结构PET的蒙特卡洛模拟

正电子发射断层显像(positron emission tomography,简称PET)能利用放射性核素标记特定元素.基于NEMA NU 2-2012标准,以Biograph Vision PET/CT为模型,使用蒙特卡洛方法研究不同稀疏环间隙对PET散射分数和灵敏度的影响.研究结果表明:该文稀疏环PET散射分数和灵敏度的模拟值均与其实验值接近.因此,该文的稀疏环PET模拟具有可靠性.

Gates法计算的GFR在单侧肾积水患者肾小球滤过功能评价中的应用

目的探讨Gates法计算的肾小球滤过率(GFR)对单侧肾积水患者肾小球滤过功能评估的价值。方法选择经B超检查确诊为单侧肾积水的患者176例(轻度积水组21例、中度积水组33例、重度积水组122例),同期选取泌尿系统及GFR均正常的肾移植供体捐献者22例(正常对照组)。两组均接受99mTc-DTPA肾动态显像检查,用Gates法计算患肾、健肾、双肾GFR值,根据单肾GFR将患者肾功能划分为肾功能正常、轻度下降、中度下降、重度下降及肾无功能。结果与正常对照组比较,中、重度积水组患侧肾GFR降低,轻、中、重度积水组健侧肾GFR升高,中、重度积水组双肾GFR降低(P均<0.05)。轻度积水组90.48%的患肾GFR正常,中度积水组63.64%的患肾GFR轻度下降,重度积水组35.25%的患肾GFR重度下降、33.33%的患肾无功能。积水越严重肾功能越差。结论 Gates法计算的单肾、总肾GFR可定量分析单侧肾积水患者肾小球滤过功能,同步评价健侧肾的代偿能力。

Gow-Gates法下牙槽神经阻滞麻醉在下颌阻生第三磨牙拔除术中的麻醉效果研究

目的通过临床随机对照试验的方法评价Gow-Gates法下牙槽神经阻滞麻醉在下颌阻生第三磨牙拔除术中的麻醉有效性和安全性。方法使用左右半口设计,32例患者的左右下颌阻生第三磨牙分别随机采用Gow-Gates法和传统注射法进行下牙槽神经阻滞麻醉,并拔除下颌阻生第三磨牙,记录麻醉效果及不良事件。结果所有患者均完成研究。Gow-Gates法的麻醉成功率为96.9%,传统注射法的麻醉成功率为90.6%,二者的麻醉成功率无统计学差异(P=0.317)。在麻醉程度上,Gow-Gates法麻醉程度为A和B级的比率为96.9%,明显好于传统注射法的78.1%(P=0.034)。Gow-Gates法的回抽出血率明显低于传统注射法(P=0.025),2种注射方法均未出现血肿。结论 Gow-Gates法下牙槽神经阻滞麻醉在下颌阻生第三磨牙拔除术中的麻醉效果好且较为安全,可以作为传统注射法的有效补充。

11.2 W/mm power density AlGaN/GaN high electron-mobility transistors on a GaN substrate

In this letter,high power density AlGaN/GaN high electron-mobility transistors(HEMTs)on a freestanding GaN substrate are reported.An asymmetricΓ-shaped 500-nm gate with a field plate of 650 nm is introduced to improve microwave power performance.The breakdown voltage(BV)is increased to more than 200 V for the fabricated device with gate-to-source and gate-to-drain distances of 1.08 and 2.92μm.A record continuous-wave power density of 11.2 W/mm@10 GHz is realized with a drain bias of 70 V.The maximum oscillation frequency(f_(max))and unity current gain cut-off frequency(f_(t))of the AlGaN/GaN HEMTs exceed 30 and 20 GHz,respectively.The results demonstrate the potential of AlGaN/GaN HEMTs on freestanding GaN substrates for microwave power applications.

基于FUZZY-BN-FTA的厂区架空燃气管道泄漏可能性研究

为研究厂区架空燃气管道泄漏的故的可能性,提出模糊数学方法、贝叶斯网络模型以及故障树模型相结合的集成模型。通过GeNIe软件建立架空燃气管道泄漏事故的模糊贝叶斯网络模型;引入Leaky Noisy-or Gate扩展模型对模糊贝叶斯网络中节点的条件概率表进行修正,结合基本事件先验概率预测架空燃气管道泄漏的概率值,并引入3个基本事件重要度确定基本事件的重要性排序,同时进行敏感性分析确定主要影响因素,提出控制措施。研究结果表明:厂区车辆撞击、管道疲劳损耗、管材质量不佳、安装设计不合理、焊接缺陷为导致架空燃气管道泄漏的主要因素。研究结果可为工业企业安全管理人员有针对性地制定控制措施,减少事故发生率提供参考。

中文重叠关系抽取的动态分层级联标记模型

构建了动态分层级联标记中文重叠关系抽取(RWG-LSA)模型:首先基于预训练语言模型和gated机制构建了动态字词融合特征学习模型(RWG),有效避免了主体标记模块的特征缺失和无法并行计算等问题;其次引入动态权局部自注意力(LSA),自主学习到主体层面的语义特征;最后在有效融合了输入序列的全局和主体局部特征的基础上,实现RWG-LSA模型对文本中实体对和关系的抽取。在SKE中文数据集上的实验表明,本模型对重叠关系抽取有显著效果,F1值达到了82.44%。

肾积水对轻中度肾损伤者Gates法GFR的影响

目的了解轻中度肾积水对肾动态显像GFR的影响。方法回顾2010年1～12月51例双血浆法GFR(tGFR)在30～90ml/(1.73m2.min)范围内的肾积水患者的肾动态显像,按照tGFR的大小并结合肾脏疾病的分期标准分成正常对照组[90ml(1.73m2.min)≤tGFR<120ml/(1.73m2.min)],轻度[60ml/(1.73m2.min)≤tGFR<90ml/(1.73m2.min)]和中度[30ml/(1.73m2.min)≤tGFR<60ml/(1.73m2.min)]肾损伤3组,并比较体表面积标准化前后Gates法GFR(gGFR)和tGFR间差异和相关性。结果大多数情况下,gGFR均高于tGFR,二者差值范围-35.1～26.1ml/(1.73m2.min);tGFRBSA和gGFRBSA间差值范围-38.3～26.8ml/(1.73m2.min)。无论轻度和中度肾损伤组,还是整体患者中,BSA标准化均可改善tGFR和gGFR间的相关性。BSA标准化后,中度肾损伤组的相关系数可达到0.634(P=0.020),而轻度肾损伤组和整体患者中仅为0.298(P=0.229)和0.543(P=0.002)。结论体表面积标准化Gates法GFR可提高其与双血浆法间的相关性,但评估肾积水伴轻中度肾损伤患者GFR价值有限,应参考双血浆法的定量结果。

白车身侧围总拼精度提升方案的创新与应用

本文系统阐述了奇瑞公司焊装车间主线侧围总拼柔性GATE系统精度提升的创新方案。该方案通过对GATE系统的定位机构进行优化调整,满足公司生产需求。通过对新的OPENGATE系统刚性CAE分析以及现场实际验证确定了该方案有效。

Flexible planar micro supercapacitor diode

Supercapacitor diode is a novel ion device that performs both supercapacitor energy storage and ion diode rectification functions.However,previously reported devices are limited by their large size and complex processes.In this work,we demonstrate a screen-printed micro supercapacitor diode(MCAPode)that based on the insertion of a finger mode with spinel ZnCo_(2)O_(4) as cathode and activated carbon as anode for the first time,and featuring an excellent area specific capacitance(1.21 mF cm^(-2)at 10 mV s^(-1))and high rectification characteristics(rectification ratioⅠof 11.99 at 40 mV s^(-1)).Taking advantage of the ionic gel electrolyte,which provides excellent stability during repeated flexing and at high temperatures.In addition,MCAPode exhibits excellent electrochemical performance and rectification capability in"AND"and"OR"logic gates.These findings provide practical solutions for future expansion of micro supercapacitor diode applications.

Current-collapse suppression and leakage-current decrease in AlGaN/GaN HEMT by sputter-TaN gate-dielectric layer

In this paper, we explore the electrical characteristics of high-electron-mobility transistors(HEMTs) using a TaN/AlGaN/GaN metal insulating semiconductor(MIS) structure. The high-resistance tantalum nitride(TaN) film prepared by magnetron sputtering as the gate dielectric layer of the device achieved an effective reduction of electronic states at the TaN/AlGaN interface, and reducing the gate leakage current of the MIS HEMT, its performance was enhanced. The HEMT exhibited a low gate leakage current of 2.15 × 10^(-7) mA/mm and a breakdown voltage of 1180 V. Furthermore, the MIS HEMT displayed exceptional operational stability during dynamic tests, with dynamic resistance remaining only 1.39 times even under 400 V stress.

A quantum blind signature scheme based on dense coding for non-entangled states

In some schemes, quantum blind signatures require the use of difficult-to-prepare multiparticle entangled states. By considering the communication overhead, quantum operation complexity, verification efficiency and other relevant factors in practical situations, this article proposes a non-entangled quantum blind signature scheme based on dense encoding. The information owner utilizes dense encoding and hash functions to blind the information while reducing the use of quantum resources. After receiving particles, the signer encrypts the message using a one-way function and performs a Hadamard gate operation on the selected single photon to generate the signature. Then the verifier performs a Hadamard gate inverse operation on the signature and combines it with the encoding rules to restore the message and complete the verification.Compared with some typical quantum blind signature protocols, this protocol has strong blindness in privacy protection,and higher flexibility in scalability and application. The signer can adjust the signature operation according to the actual situation, which greatly simplifies the complexity of the signature. By simultaneously utilizing the secondary distribution and rearrangement of non-entangled quantum states, a non-entangled quantum state representation of three bits of classical information is achieved, reducing the use of a large amount of quantum resources and lowering implementation costs. This improves both signature verification efficiency and communication efficiency while, at the same time, this scheme meets the requirements of unforgeability, non-repudiation, and prevention of information leakage.

Te掺杂的GaSb材料载流子特性研究

非故意掺杂的GaSb材料呈现p型导电,限制了GaSb材料在InAs/GaSb超晶格红外探测器等领域的应用。探究N型GaSb薄膜电学特性对估算超晶格载流子浓度以及制备超晶格衬底、缓冲层、电极接触层等提供了一定的理论依据。Te掺杂能够以抑制GaSb本征缺陷的方式实现N型GaSb薄膜的制备,利用分子束外延(Molecular Beam Epitaxy,MBE)技术,设置GaTe源温分别为420℃、450℃、480℃,分别在GaSb衬底与GaAs衬底上生长不同GaTe源温度下掺杂的GaSb薄膜,通过霍尔测试探究GaSb薄膜的电学特性。在77 K的霍尔测试中,发现在GaAs衬底上生长的GaSb薄膜均显示为N型半导体,载流子浓度随源温升高而增加。与非故意掺杂的GaSb相比,源温为420℃、450℃时由于载流子浓度增加而导致的杂质散射,迁移率大幅提高,且随温度升高而增加,但在480℃时,由于缺陷密度减小,迁移率大大减小。在GaSb衬底上生长7000ABe掺杂的GaSb缓冲层,再生长5000ATe掺杂的GaSb薄膜。结果发现,由于P型缓冲层的存在,当源温为420℃时,薄膜显示为P型半导体,空穴载流子的存在导致薄膜整体载流子浓度增加,且空穴和电子的补偿作用使迁移率大幅降低。源温为450℃、480℃时,薄膜仍为N型半导体,载流子浓度随温度增加,且为GaAs衬底上生长的GaSb薄膜载流子浓度的2~3倍;迁移率在450℃时最高,480℃时减小。设置GaTe源温为450℃时GaSb薄膜的载流子浓度较高且迁移率较高,参与超晶格材料的制备能够使整个材料的效果最佳。

Remote entangling gate between a quantum dot spin and a transmon qubit mediated by microwave photons

Spin qubits and superconducting qubits are promising candidates for realizing solid-state quantum information processors.Designing a hybrid architecture that combines the advantages of different qubits on the same chip is a highly desirable but challenging goal.Here we propose a hybrid architecture that utilizes a high-impedance SQUID array resonator as a quantum bus,thereby coherently coupling different solid-state qubits.We employ a resonant exchange spin qubit hosted in a triple quantum dot and a superconducting transmon qubit.Since this hybrid system is highly tunable,it can operate in a dispersive regime,where the interaction between the different qubits is mediated by virtual photons.By utilizing such interactions,entangling gate operations between different qubits can be realized in a short time of 30 ns with a fidelity of up to 96.5%under realistic parameter conditions.Further utilizing this interaction,remote entangled state between different qubits can be prepared and is robust to perturbations of various parameters.These results pave the way for exploring efficient fault-tolerant quantum computation on hybrid quantum architecture platforms.

Prediction and scheduling of multi-energy microgrid based on BiGRU self-attention mechanism and LQPSO

To predict renewable energy sources such as solar power in microgrids more accurately,a hybrid power prediction method is presented in this paper.First,the self-attention mechanism is introduced based on a bidirectional gated recurrent neural network(BiGRU)to explore the time-series characteristics of solar power output and consider the influence of different time nodes on the prediction results.Subsequently,an improved quantum particle swarm optimization(QPSO)algorithm is proposed to optimize the hyperparameters of the combined prediction model.The final proposed LQPSO-BiGRU-self-attention hybrid model can predict solar power more effectively.In addition,considering the coordinated utilization of various energy sources such as electricity,hydrogen,and renewable energy,a multi-objective optimization model that considers both economic and environmental costs was constructed.A two-stage adaptive multi-objective quantum particle swarm optimization algorithm aided by a Lévy flight,named MO-LQPSO,was proposed for the comprehensive optimal scheduling of a multi-energy microgrid system.This algorithm effectively balances the global and local search capabilities and enhances the solution of complex nonlinear problems.The effectiveness and superiority of the proposed scheme are verified through comparative simulations.