Streaming potential is mainly related to electrokinetic energy conversion,which has been considered to show promising potential for advanced technologies,especially sensing.The inherent property of streaming potential...Streaming potential is mainly related to electrokinetic energy conversion,which has been considered to show promising potential for advanced technologies,especially sensing.The inherent property of streaming potential is that the energy conversion process is always a continuous state.However,practical applications include many cases of discontinuous states,such as nonlinear sensing.Here,we report a discontinuous streaming potential electrokinetic energy conversion fluid system.Experiments and theoretical calculations reveal that this system exhibits a discontinuous electrokinetic effect and provides a gating liquid slip in micropores,offering the advantages of gating liquid charge coupling and interfacial drag reduction.Moreover,the system is demonstrated in a wearable fall-down alert application.We expect this liquid gating energy conversion system to open up a platform for the design and application of autonomous health monitoring devices,seismic sea wave warning systems,and beyond.展开更多
A new PMMA/PMGI/ZEP520/PMGI four-layer resistor electron beam lithography technology is successfully developed and used to fabricate a 120 nm gate-length lattice-matched In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)...A new PMMA/PMGI/ZEP520/PMGI four-layer resistor electron beam lithography technology is successfully developed and used to fabricate a 120 nm gate-length lattice-matched In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48) As InP-based HEMT,of which the material structure is successfully designed and optimized by our group.A 980 nm ultra-wide T-gate head,which is nearly as wide as 8 times the gatefoot(120 nm),is successfully obtained,and the excellent T-gate profile greatly reduces the parasitic resistance and capacitance effect and effectively enhances the RF performances. These fabricated devices demonstrate excellent DC and RF performances such as a maximum current gain frequency of 190 GHz and a unilateral power-gain gain frequency of 146 GHz.展开更多
基金National Natural Science Foundation of China(52025132,21975209,21621091,12075191)National Key R&D Program of China(2018YFA0209500)+3 种基金National Science Foundation of Fujian Province(2022J02059)Fundamental Research Funds for the Central Universities in China(20720220085)111 Project(B17027,B16029)Science and Technology Projects of Innovation Laboratory for Sciences and Technologies of Energy Materials of Fujian Province(grant no.RD2022070601).
文摘Streaming potential is mainly related to electrokinetic energy conversion,which has been considered to show promising potential for advanced technologies,especially sensing.The inherent property of streaming potential is that the energy conversion process is always a continuous state.However,practical applications include many cases of discontinuous states,such as nonlinear sensing.Here,we report a discontinuous streaming potential electrokinetic energy conversion fluid system.Experiments and theoretical calculations reveal that this system exhibits a discontinuous electrokinetic effect and provides a gating liquid slip in micropores,offering the advantages of gating liquid charge coupling and interfacial drag reduction.Moreover,the system is demonstrated in a wearable fall-down alert application.We expect this liquid gating energy conversion system to open up a platform for the design and application of autonomous health monitoring devices,seismic sea wave warning systems,and beyond.
基金supported by the Young Scientists Fund of the National Natural Science Foundation of China(No.60806024)the Fundamental Research Funds for Central University,China(No.XDJK2009C020)
文摘A new PMMA/PMGI/ZEP520/PMGI four-layer resistor electron beam lithography technology is successfully developed and used to fabricate a 120 nm gate-length lattice-matched In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48) As InP-based HEMT,of which the material structure is successfully designed and optimized by our group.A 980 nm ultra-wide T-gate head,which is nearly as wide as 8 times the gatefoot(120 nm),is successfully obtained,and the excellent T-gate profile greatly reduces the parasitic resistance and capacitance effect and effectively enhances the RF performances. These fabricated devices demonstrate excellent DC and RF performances such as a maximum current gain frequency of 190 GHz and a unilateral power-gain gain frequency of 146 GHz.