Effect of additive boron on type-Ib gem diamond single crystals synthesized under HPHT

The boron-doped type-Ib gem diamond crystals were synthesized successfully by adding amorphous boron into a system of graphite and Kovar catalyst under high pressure and high temperature (HPHT).The effect of additive boron on type-Ib gem diamond was extensively studied including the growth characteristic,morphology and nitrogen concentration.The synthesized boron-doped type-Ib gem diamond crystals were characterized by optical microscope (OM),scanning electron microscope (SEM) and infrared spectrometer (IR).The results show that the growth region of the {111} face becomes wide,whereas the growth region of the {100} face becomes narrow and nearly disappears as increasing additive boron in the sample.The crystal will be opaque and imperfect,and the concentration of nitrogen will be decreased when the boron atoms are incorporated into gem diamond lattice.These techniques are very important and will be widely applied.

Effects of additive boron on HPHT diamond single crystals grown by TGM

In this work, under pressure 5.4 GPa and temperature 1250-1400°C, large gem-diamond single crystals with perfect shape and different content of additive boron were synthesized using temperature gradient method. High-purity boron powders were added as boron source into the graphite powder, and the effects of additive boron on crystal growth habit were investigated in detail. The relationship between the growth rate and the amount of additive boron was studied. The scanning electron microscopy was employed to study the morphology of boron-doped diamond crystals. Raman spectroscopy and Hall measurements were used to investigate the crystal structures and the carrier concentration, respectively. The results show that with the increase of the content of boron added into graphite powder, the crystal growth rate and the carrier concentration increase firstly, and decrease afterwards, and the zone-center phonon line at 1332 cm 1 has small shift to lower energy. The defects occur on the crystal surface when excessive boron is added in the synthesis system.

添加剂硼对纯铁粉末触媒合成金刚石的影响

本文研究了添加剂硼对纯铁粉末触媒合成金刚石的影响。实验中将不同比例的无定形硼粉直接添加到石墨-纯铁粉末体系中并均匀混合,以此方式,将硼掺杂到高温高压合成的金刚石单晶中。实验结果表明,随硼添加比例的不同,合成金刚石的最低压力点也不同;同时,通过不同添加比例的硼合成出金刚石的颜色,可得知该方法对提高金刚石内硼含量的有效性。实验还发现,当硼添加比例一定时,合成温度对合成金刚石的特性产生了一系列的影响。

高温高压合成含硼金刚石单晶制备工艺初探

本文以掺入不同含量硼铁的铁基合金为触媒,以石墨为碳源,在高温高压条件下合成了含硼金刚石单晶体。利用扫描电镜(SEM)观察了金刚石及触媒的组织形貌;利用金相显微镜观察了金刚石颗粒的颜色和形态;利用拉曼光谱仪(RS)确认了人造金刚石单晶体中硼的存在;利用低温电阻测量仪验证了合成的含硼金刚石单晶颗粒具有半导体性能。实验结果表明,在金刚石的合成中,触媒中硼铁含量为2wt%的合成效果相对最好。

优质Ⅱb型宝石级金刚石大单晶的高温高压合成

实验在国产六面顶压机上利用温度梯度法合成优质Ⅱb型宝石级金刚石。研究发现在约5.5GPa和约1300℃的条件下,添加剂硼的加入使合成Ⅱb型金刚石的形貌较Ⅱa型宝石级金刚石有较大不同,文章分析了产生该现象的原因;实验还发现随着硼添加量的增加,所合成Ⅱb型宝石级金刚石的颜色由浅变深。结果实验获得了尺寸达4mm的优质Ⅱb型宝石级金刚石大单晶。

高温高压下用氧化硼添加剂合成金刚石

文章研究了氧化硼添加剂对F e70N i30触媒合成金刚石的影响。当前掺硼金刚石是研究的热点,但关于利用F e70N i30触媒合成掺氧化硼的金刚石的文章却不多。在实验中将一定比例的氧化硼添加到石墨-F e70N i30粉末体系中并混合均匀,在六面顶压机上利用高温高压合成掺氧化硼金刚石。实验结果表明,添加一定量的氧化硼对金刚石的合成压力和温度的影响不大,但掺氧化硼合成的金刚石与不掺杂合成的金刚石在颜色和表面形貌上有很大的区别。对这种情况作了比较和分析。

添加剂硼对合成细颗粒金刚石单晶的影响

实验在国产六面顶压机上利用高温高压方法,在铁基粉末触媒中添加硼粉,合成出了细颗粒金刚石单晶,找到了合成含硼细颗粒金刚石单晶的最佳添加比例。实验结果表明:随着硼添加量的增加,晶体的颜色逐渐加深,合成细颗粒金刚石单晶的最低压力点呈动态变化趋势。在铁基粉末触媒中添加硼粉,合成的金刚石单晶容易出现包裹体,且颗粒细化后依旧没有大的改善,原因与硼的电子结构有关。

多种硼源的复合添加对含硼金刚石单晶的影响

本文使用碳化硼、六方氮化硼和硼砂三种硼源材料复合添加的铁基触媒在高温高压下合成含硼金刚石,通过对金刚石结构与性能的表征,探讨多种硼源复合添加对含硼金刚石的影响。实验发现,采用多种硼源复合添加的铁基触媒合成金刚石可以有效地稳定金刚石的硼源供给,提高金刚石的含硼量。随着硼含量的增加,金刚石的结晶习性逐渐以(111)晶面为主,主要的机械性能和热稳定性得到了明显的提高。实验结果充分说明,多种硼源复合添加更有利于提高含硼金刚石的品级。