The boron-doped type-Ib gem diamond crystals were synthesized successfully by adding amorphous boron into a system of graphite and Kovar catalyst under high pressure and high temperature (HPHT).The effect of additive ...The boron-doped type-Ib gem diamond crystals were synthesized successfully by adding amorphous boron into a system of graphite and Kovar catalyst under high pressure and high temperature (HPHT).The effect of additive boron on type-Ib gem diamond was extensively studied including the growth characteristic,morphology and nitrogen concentration.The synthesized boron-doped type-Ib gem diamond crystals were characterized by optical microscope (OM),scanning electron microscope (SEM) and infrared spectrometer (IR).The results show that the growth region of the {111} face becomes wide,whereas the growth region of the {100} face becomes narrow and nearly disappears as increasing additive boron in the sample.The crystal will be opaque and imperfect,and the concentration of nitrogen will be decreased when the boron atoms are incorporated into gem diamond lattice.These techniques are very important and will be widely applied.展开更多
In this work, under pressure 5.4 GPa and temperature 1250-1400°C, large gem-diamond single crystals with perfect shape and different content of additive boron were synthesized using temperature gradient method. H...In this work, under pressure 5.4 GPa and temperature 1250-1400°C, large gem-diamond single crystals with perfect shape and different content of additive boron were synthesized using temperature gradient method. High-purity boron powders were added as boron source into the graphite powder, and the effects of additive boron on crystal growth habit were investigated in detail. The relationship between the growth rate and the amount of additive boron was studied. The scanning electron microscopy was employed to study the morphology of boron-doped diamond crystals. Raman spectroscopy and Hall measurements were used to investigate the crystal structures and the carrier concentration, respectively. The results show that with the increase of the content of boron added into graphite powder, the crystal growth rate and the carrier concentration increase firstly, and decrease afterwards, and the zone-center phonon line at 1332 cm 1 has small shift to lower energy. The defects occur on the crystal surface when excessive boron is added in the synthesis system.展开更多
基金supported by the National Natural Science Foundation of China (Grant No.50572032)
文摘The boron-doped type-Ib gem diamond crystals were synthesized successfully by adding amorphous boron into a system of graphite and Kovar catalyst under high pressure and high temperature (HPHT).The effect of additive boron on type-Ib gem diamond was extensively studied including the growth characteristic,morphology and nitrogen concentration.The synthesized boron-doped type-Ib gem diamond crystals were characterized by optical microscope (OM),scanning electron microscope (SEM) and infrared spectrometer (IR).The results show that the growth region of the {111} face becomes wide,whereas the growth region of the {100} face becomes narrow and nearly disappears as increasing additive boron in the sample.The crystal will be opaque and imperfect,and the concentration of nitrogen will be decreased when the boron atoms are incorporated into gem diamond lattice.These techniques are very important and will be widely applied.
文摘In this work, under pressure 5.4 GPa and temperature 1250-1400°C, large gem-diamond single crystals with perfect shape and different content of additive boron were synthesized using temperature gradient method. High-purity boron powders were added as boron source into the graphite powder, and the effects of additive boron on crystal growth habit were investigated in detail. The relationship between the growth rate and the amount of additive boron was studied. The scanning electron microscopy was employed to study the morphology of boron-doped diamond crystals. Raman spectroscopy and Hall measurements were used to investigate the crystal structures and the carrier concentration, respectively. The results show that with the increase of the content of boron added into graphite powder, the crystal growth rate and the carrier concentration increase firstly, and decrease afterwards, and the zone-center phonon line at 1332 cm 1 has small shift to lower energy. The defects occur on the crystal surface when excessive boron is added in the synthesis system.