Generalized short circuit ratio(g SCR)for grid strength assessment of multi-infeed high-voltage direct current(MIDC)systems is a rigorous theoretical extension of the traditional SCR,which enables SCR to be extended t...Generalized short circuit ratio(g SCR)for grid strength assessment of multi-infeed high-voltage direct current(MIDC)systems is a rigorous theoretical extension of the traditional SCR,which enables SCR to be extended to MIDC systems.However,g SCR is originally based on the assumption of homogeneous MIDC systems,in which all high-voltage direct current(HVDC)converters have an identical control configuration,thus presenting challenges to applications of g SCR to inhomogeneous MIDC systems.To weaken this assumption,this paper applies matrix perturbation theory to explore the possibility of utilization of g SCR into inhomogeneous MIDC systems.Results of numerical experiments show that in inhomogeneous MIDC systems,the previously proposed g SCR can still be used without modification.However,critical g SCR(Cg SCR)must be redefined by considering the characteristics of control configurations of HVDC converter.Accordingly,the difference between g SCR and redefined Cg SCR can effectively quantify the pertinent AC grid strength in terms of the static-voltage stability margin.The performance of the proposed method is demonstrated in a triple-infeed inhomogeneous line commutated converter based high-voltage direct current(LCC-HVDC)system.展开更多
This paper presents a low power and high efficiency high voltage generator circuit embedded in electrically erasable programmable read-only memory(EEPROM).The low power is minimized by a capacitance divider circuit ...This paper presents a low power and high efficiency high voltage generator circuit embedded in electrically erasable programmable read-only memory(EEPROM).The low power is minimized by a capacitance divider circuit and a regulator circuit using the controlling clock switch technique.The high efficiency is dependent on the zero threshold voltage(V_(th)) MOSFET and the charge transfer switch(CTS) charge pump.The proposed high voltage generator circuit has been implemented in a 0.35μm EEPROM CMOS process.Measured results show that the proposed high voltage generator circuit has a low power consumption of about 150.48μW and a higher pumping efficiency(83.3%) than previously reported circuits.This high voltage generator circuit can also be widely used in low-power flash devices due to its high efficiency and low power dissipation.展开更多
基金jointly supported by the National Natural Science Foundation of China(No.52007163)China Postdoctoral Science Foundation(No.2020M671718)。
文摘Generalized short circuit ratio(g SCR)for grid strength assessment of multi-infeed high-voltage direct current(MIDC)systems is a rigorous theoretical extension of the traditional SCR,which enables SCR to be extended to MIDC systems.However,g SCR is originally based on the assumption of homogeneous MIDC systems,in which all high-voltage direct current(HVDC)converters have an identical control configuration,thus presenting challenges to applications of g SCR to inhomogeneous MIDC systems.To weaken this assumption,this paper applies matrix perturbation theory to explore the possibility of utilization of g SCR into inhomogeneous MIDC systems.Results of numerical experiments show that in inhomogeneous MIDC systems,the previously proposed g SCR can still be used without modification.However,critical g SCR(Cg SCR)must be redefined by considering the characteristics of control configurations of HVDC converter.Accordingly,the difference between g SCR and redefined Cg SCR can effectively quantify the pertinent AC grid strength in terms of the static-voltage stability margin.The performance of the proposed method is demonstrated in a triple-infeed inhomogeneous line commutated converter based high-voltage direct current(LCC-HVDC)system.
基金supported by the National Natural Science Foundation of China(No.61072010)
文摘This paper presents a low power and high efficiency high voltage generator circuit embedded in electrically erasable programmable read-only memory(EEPROM).The low power is minimized by a capacitance divider circuit and a regulator circuit using the controlling clock switch technique.The high efficiency is dependent on the zero threshold voltage(V_(th)) MOSFET and the charge transfer switch(CTS) charge pump.The proposed high voltage generator circuit has been implemented in a 0.35μm EEPROM CMOS process.Measured results show that the proposed high voltage generator circuit has a low power consumption of about 150.48μW and a higher pumping efficiency(83.3%) than previously reported circuits.This high voltage generator circuit can also be widely used in low-power flash devices due to its high efficiency and low power dissipation.