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Grid Strength Assessment for Inhomogeneous Multi-infeed HVDC Systems via Generalized Short Circuit Ratio
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作者 Guanzhong Wang Huanhai Xin +2 位作者 Di Wu Zhiyi Li Ping Ju 《Journal of Modern Power Systems and Clean Energy》 SCIE EI CSCD 2023年第4期1370-1374,共5页
Generalized short circuit ratio(g SCR)for grid strength assessment of multi-infeed high-voltage direct current(MIDC)systems is a rigorous theoretical extension of the traditional SCR,which enables SCR to be extended t... Generalized short circuit ratio(g SCR)for grid strength assessment of multi-infeed high-voltage direct current(MIDC)systems is a rigorous theoretical extension of the traditional SCR,which enables SCR to be extended to MIDC systems.However,g SCR is originally based on the assumption of homogeneous MIDC systems,in which all high-voltage direct current(HVDC)converters have an identical control configuration,thus presenting challenges to applications of g SCR to inhomogeneous MIDC systems.To weaken this assumption,this paper applies matrix perturbation theory to explore the possibility of utilization of g SCR into inhomogeneous MIDC systems.Results of numerical experiments show that in inhomogeneous MIDC systems,the previously proposed g SCR can still be used without modification.However,critical g SCR(Cg SCR)must be redefined by considering the characteristics of control configurations of HVDC converter.Accordingly,the difference between g SCR and redefined Cg SCR can effectively quantify the pertinent AC grid strength in terms of the static-voltage stability margin.The performance of the proposed method is demonstrated in a triple-infeed inhomogeneous line commutated converter based high-voltage direct current(LCC-HVDC)system. 展开更多
关键词 generalized short circuit ratio(gSCR) multiinfeed high-voltage direct current system modal perturbation static-voltage stability
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High voltage generator circuit with low power and high efficiency applied in EEPROM 被引量:1
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作者 刘彦 张世林 赵毅强 《Journal of Semiconductors》 EI CAS CSCD 2012年第6期79-83,共5页
This paper presents a low power and high efficiency high voltage generator circuit embedded in electrically erasable programmable read-only memory(EEPROM).The low power is minimized by a capacitance divider circuit ... This paper presents a low power and high efficiency high voltage generator circuit embedded in electrically erasable programmable read-only memory(EEPROM).The low power is minimized by a capacitance divider circuit and a regulator circuit using the controlling clock switch technique.The high efficiency is dependent on the zero threshold voltage(V_(th)) MOSFET and the charge transfer switch(CTS) charge pump.The proposed high voltage generator circuit has been implemented in a 0.35μm EEPROM CMOS process.Measured results show that the proposed high voltage generator circuit has a low power consumption of about 150.48μW and a higher pumping efficiency(83.3%) than previously reported circuits.This high voltage generator circuit can also be widely used in low-power flash devices due to its high efficiency and low power dissipation. 展开更多
关键词 CTS charge pump high efficiency high voltage generator circuit low power EEPROM oscillation zero V_(th)
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