THz plasmonics and electronics in germanene nanostrips

Germanene nanostrips(GeNSs)have garnered significant attention in modern semiconductor technology due to their exceptional physical characteristics,positioning them as promising candidates for a wide range of applications.GeNSs exhibit a two-dimensional(buckled)honeycomb-like lattice,which is similar to germanene but with controllable bandgaps.The modeling of GeNSs is essential for developing appropriate synthesis methods as it enables understanding and controlling the growth process of these systems.Indeed,one can adjust the strip width,which in turn can tune the bandgap and plasmonic response of the material to meet specific device requirements.In this study,the objective is to investigate the electronic behav-ior and THz plasmon features of GeNSs(≥100 nm wide).A semi-analytical model based on the charge-carrier velocity of free-standing germanene is utilized for this purpose.The charge-carrier velocity of freestanding germanene is determined through the GW approximation(V_(F)=0.702×10^(6)m·s^(−1)).Within the width range of 100 to 500 nm,GeNSs exhibit narrow bandgaps,typi-cally measuring only a few meV.Specifically,upon analysis,it was found that the bandgaps of the investigated GeNSs ranged between 29 and 6 meV.As well,these nanostrips exhibit√q-like plasmon dispersions,with their connected plasmonic fre-quency(≤30 THz)capable of being manipulated by varying parameters such as strip width,excitation plasmon angle,and sam-ple quality.These manipulations can lead to frequency variations,either increasing or decreasing,as well as shifts towards larger momentum values.The outcomes of our study serve as a foundational motivation for future experiments,and further con-firmation is needed to validate the reported results.

g-C_3N_4/germanene异质结物理性质的密度泛函计算-电场的影响（英文）

通过第一性原理计算研究电场强度和方向对于g-C3N4/germanene双层的结合能、态密度以及电荷的影响.计算结果显示,电场对于双层的物理性质影响很大,方向朝上的电场使得态密度曲线向左移动,同时方向朝下的电场使得态密度曲线朝右移动.并且在电场的影响下,功函数的变化不大.

Effect of warpage on the electronic structure and optical properties of bilayer germanene

The electronic structure and optical properties of bilayer germanene under different warpages are studied by the first-principles method of density functional theory.The effects of warpages on the electronic structure and optical properties of bilayer germanene are analyzed.The results of the electronic structure study show that the bottom of the conduction band of bilayer germanene moves to the lower energy direction with the increase of warpages at the K point,and the top of the valence band stays constant at the K point,and so the band gap decreases with the increase of warpage.When the warpage is 0.075 nm,the top of the valence band of bilayer germanene changes from K point to G point,and the bilayer germanene be-comes an indirect band gap semiconductor.This is an effective means to modulate the conversion of bilayer germanene between direct band gap semiconductor and indirect band gap semiconductor by adjusting the band structure of bilayer ger-manene effectively.The study of optical properties shows that the effect of warpage on the optical properties of bilayer ger-manene is mainly distributed in the ultraviolet and visible regions,and the warpage can effectively regulate the electronic struc-ture and optical properties of bilayer germanene.When the warpage is 0.069 nm,the first peak of dielectric function and extinc-tion coefficient is the largest,and the energy corresponding to the absorption band edge is the smallest.Therefore,the elec-tron utilization rate is the best when the warpage is 0.069 nm.

On the mystery of the absence of a spin-orbit gap in scanning tunneling microscopy spectra of germanene

Germanene,the germanium analogue of graphene,shares many properties with its carbon counterpart.Both materials are two-dimensional materials that host Dirac fermions.There are,however,also a few important differences between these two materials:(1)graphene has a planar honeycomb lattice,whereas germanene’s honeycomb lattice is buckled and(2)the spin-orbit gap in germanene is predicted to be about three orders of magnitude larger than the spin-orbit gap in graphene(24 meV for germanene versus 20μeV for graphene).Surprisingly,scanning tunneling spectra recorded on germanene layers synthesized on different substrates do not show any sign of the presence of a spin-orbit gap.To date the exact origin of the absence of this spin-orbit gap in the scanning tunneling spectra of germanene has remained a mystery.In this work we show that the absence of the spin-orbit gap can be explained by germanene’s exceptionally low work function of only 3.8 eV.The difference in work function between germanene and the scanning tunneling microscopy tip(the work functions of most commonly used STM tips are in the range of 4.5 to 5.5 eV)gives rise to an electric field in the tunnel junction.This electric field results in a strong suppression of the size of the spin-orbit gap.

Two types of ultrafast mode‑locking operations from an Er‑doped fber laser based on germanene nanosheets

As a member of Xenes family,germanene has excellent nonlinear saturable absorption characteristics.In this work,we prepared germanene nanosheets by liquid phase exfoliation and measured their saturation intensity as 0.6 GW/cm^(2) with a modulation depth of 8%.Then,conventional solitons with a pulse width of 946 fs and high-energy noise-like pulses with a pulse width of 784 fs were obtained by using germanene nanosheet as a saturable absorber for a mode-locked Erbium-doped fber laser.The characteristics of the two types of pulses were investigated experimentally.The results reveal that germanene has great potential for modulation devices in ultrafast lasers and can be used as a material for creation of excellent nonlinear optical devices to explore richer applications in ultrafast photonics.

Single and multi domain buckled germanene phases on Al(111)surface

The simultaneous formati on of single domain(3×3)and multi domai n(√7×√7)R(±19.1°)germa nene phases on Al(111)surface in thesub-monolayer range was studied using seanning tunneling microscopy(STM)and density functional theory(DFT)based simulations.Experimental results revealed that both germa nene phases nu cleate and grow in dependently from each other and regardless of Al substratetemperature within significantly expanded range Ts=27-200℃.Our results unambiguously showed that STM images with hexagonalcontrast yield correct-resolved structure for both germanene phases,while honeycomb contrast is a result of an artificial tip-induced STM resolution.First-principles calculations suggested atomic models with strongly buckled germanene(2×2)/Al(111)(3×3)and(√3×√3)R30°/Al(111)(√7×√7)R(±19.1°)with one of eight and one of six Ge atoms protruding upward respectively,that consistently describe the experimentally observed STM images both for single and multi domai n surface phases.According to the DFT based simulati ons both germa nene(2×2)and(√3×√3)R30°superstructures have a stretched lattice strain with respect to the ideal free-standing germa nene by 6.2%and 13.9%,respectively.Hence,numerous small domains separated by domain boundaries in the(√3×√3)R30°/Al(111)(√7×√7)R(±19.1°)germanenephase tend to reduce the surface energy and prevent the formation of extended single domains,in contrast to the(2×2)/Al(111)(3×3)phase.However,our experimental results showed that the nucleation and growth of germa nene on Al(111)surface yield strong modifications of Alsurface even at room temperature(RT),which may be contributed to the formation of Al-Ge alloy due to Ge surface solid-states reactivitythat was ignored in recent studies.It is already evident from our present findings that the role of Al atoms in the formation of(3×3)and(√7×√7)R(±19.1°)germa nene phases is worthy to be carefully studied in the future,which could be an important knowledge for large-quantityfabrication of germanene on aluminum.

Competing magnetic states in silicene and germanene 2D ferromagnets

Two-dimension(2D)magnets have recently developed into a class of stoichiometric materials with prospective applications in ultra-compact spintronics and quantum computing.Their functionality is particularly rich when different magnetic orders are competing in the same material.Metalloxenes REX2(RE=Eu,Gd;X=Si,Ge),silicene or germanene—heavy counterparts of graphene—coupled with a layer of rare-earth metals,evolve from three-dimension(3D)antiferromagnets in multilayer structures to 2D ferromagnets in a few monolayers.This evolution,however,does not lead to fully saturated 2D ferromagnetism,pointing at a possibility of coexisting/competing magnetic states.Here,REX2 magnetism is explored with element-selective X-ray magnetic circular dichroism(XMCD).The measurements are carried out for GdSi2,EuSi2,GdGe2,and EuGe2 of different thicknesses down to 1 monolayer employing K absorption edges of Si and Ge as well as M and L edges of the rare-earths.They access the magnetic state in REX2 and determine the seat of magnetism,orbital,and spin contributions to the magnetic moment.High-field measurements probe remnants of the bulk antiferromagnetism in 2D REX2.The results provide a new platform for studies of complex magnetic structures in 2D materials.

Two-dimensional materials of group-IVA boosting the development of energy storage and conversion

Graphene,an emerging fabric of carbon atoms,has manifested its versatility in all kinds of fields encompassing electronics,optoelectronics,thermoelectrics,taking advantage of its excellent mechanical strength,exceptional electronic and thermal conductivities,high surface specific area,and so forth.The prosperity of graphene never seen before has led the attention to silicene,siloxene,germanene,stanene,and plumbene due to their promising applications in the quantum spin Hall effect,topological insulator,batteries,capacitors,catalysis,and topological superconductivity.Herein,we review the existing production methods,numerous applications of two-dimensional group-IVA materials,and critically discuss the challenges of these materials,providing potential implications to the exploration of uncharted material systems.

2D-layered Sn/Ge anodes for lithium-ion batteries with high capacity and ultra-fast Li ion diffusivity

As a new type of green energy, lithium-ion battery(LIB) has been widely used in various electric portable devices because of its high-voltage, large specific capacity, long cycle life and environmental friendliness [1,2]. However, today’s anode materials of commercial LIBs cannot meet the further development requirements of smart devices and electric car due to the limitations of the electrode capacity(e.g. 372 mAh g-1 for graphite).

Theoretical Investigation of Structural, Electronic, and Mechanical Properties of Two Dimensional C, Si, Ge, Sn

In this article, we investigate the predictions of the first principles on structural stability, electronic and mechanical properties of 2D nanostructures: graphene, silicene, germanene and stenane. The electronic band structure and density of states in all these 2D materials are found to be generic in nature. A small band gap is generated in all the reported materials other than graphene. The linearity at the Dirac cone changes to quadratic, from graphene to stenane and a perfect semimetalicity is exhibited only by graphene. All other 2D structures tend to become semiconductors with an infinitesimal band gap. Bonding characteristics are revealed by density of states histogram, charge density contour, and Mulliken population analysis. Among all 2D materials graphene exhibits exotic mechanical properties. Analysis by born stability criteria and the calculation of formation enthalpies envisages the structural stability of all the structures in the 2D form. The calculated second order elastic stiffness tensor is used to determine the moduli of elasticity in turn to explore the mechanical properties of all these structures for the prolific use in engineering science. Graphene is found to be the strongest material but brittle in nature. Germanene and stenane exhibit ductile nature and hence could be easily incorporated with the existing technology in the semiconductor industry on substrates.

Germanium-based monoelemental and binary two-dimensional materials:Theoretical and experimental investigations and promising applications

Two-dimensional(2D)materials based on group IVA elements have attracted extensive attention owing to their rich chemical structures and novel proper-ties.This comprehensive review focuses on the phases of Ge monoelemental and binary 2D materials including germanene and its derivatives,Ge-IVA binary compounds,Ge-VA binary compounds,and Ge-VIA binary compounds.The latest progress in predictive modeling,fabrication,and fundamental and physical property modulation of their stable 2D configurations are presented.Accordingly,various interesting applications of these Ge-based 2D materials are discussed,particularly field effect transistors,photodetectors,optical devices,catalysts,energy storage devices,solar cells,thermoelectric devices,sensors,biomedical materials,and spintronic devices.Finally,this review con-cludes with a few perspectives and an outlook for quickly expanding the appli-cation scope Ge-based 2D materials based on recent developments.