To detect radioactive substances with low activity levels,an anticoincidence detector and a high-purity germanium(HPGe)detector are typically used simultaneously to suppress Compton scattering background,thereby resul...To detect radioactive substances with low activity levels,an anticoincidence detector and a high-purity germanium(HPGe)detector are typically used simultaneously to suppress Compton scattering background,thereby resulting in an extremely low detection limit and improving the measurement accuracy.However,the complex and expensive hardware required does not facilitate the application or promotion of this method.Thus,a method is proposed in this study to discriminate the digital waveform of pulse signals output using an HPGe detector,whereby Compton scattering background is suppressed and a low minimum detectable activity(MDA)is achieved without using an expensive and complex anticoincidence detector and device.The electric-field-strength and energy-deposition distributions of the detector are simulated to determine the relationship between pulse shape and energy-deposition location,as well as the characteristics of energy-deposition distributions for fulland partial-energy deposition events.This relationship is used to develop a pulse-shape-discrimination algorithm based on an artificial neural network for pulse-feature identification.To accurately determine the relationship between the deposited energy of gamma(γ)rays in the detector and the deposition location,we extract four shape parameters from the pulse signals output by the detector.Machine learning is used to input the four shape parameters into the detector.Subsequently,the pulse signals are identified and classified to discriminate between partial-and full-energy deposition events.Some partial-energy deposition events are removed to suppress Compton scattering.The proposed method effectively decreases the MDA of an HPGeγ-energy dispersive spectrometer.Test results show that the Compton suppression factors for energy spectra obtained from measurements on ^(152)Eu,^(137)Cs,and ^(60)Co radioactive sources are 1.13(344 keV),1.11(662 keV),and 1.08(1332 keV),respectively,and that the corresponding MDAs are 1.4%,5.3%,and 21.6%lower,respectively.展开更多
High-performance germanium(Ge)waveguide photodetectors are designed and fabricated utilizing the inductivegain-peaking technique.With the appropriate integrated inductors,the 3-dB bandwidth of photodetectors is signif...High-performance germanium(Ge)waveguide photodetectors are designed and fabricated utilizing the inductivegain-peaking technique.With the appropriate integrated inductors,the 3-dB bandwidth of photodetectors is significantly improved owing to the inductive-gain-peaking effect without any compromises to the dark current and optical responsivity.Measured 3-dB bandwidth up to 75 GHz is realized and clear open eye diagrams at 64 Gbps are observed.In this work,the relationship between the frequency response and large signal transmission characteristics on the integrated inductors of Ge waveguide photodetectors is investigated,which indicates the high-speed performance of photodetectors using the inductive-gainpeaking technique.展开更多
The process of thermal stress damage during 1080 nm laser ablation of single-crystal germanium was recorded in real time using a high-speed charge-coupled device.A three-dimensional finite element numerical model base...The process of thermal stress damage during 1080 nm laser ablation of single-crystal germanium was recorded in real time using a high-speed charge-coupled device.A three-dimensional finite element numerical model based on Fourier's heat conduction equation,Hooke's law and the Alexander–Hasson equation was developed to analyze the thermal stress damage mechanism involved.The damage morphology of the ablated samples was observed using an optical microscope.The results show that the cooling process has an important influence on fracture in the laser-irradiated region of single-crystal germanium.Fracture is the result of a combination of thermal stress and reduction in local yield strength.展开更多
Some organogermanium oligomers with different side groups were synthesized via ligand substitution polymerization from I, l-dioxane complex of germanium dichloride with different organolithium compounds. The oligomers...Some organogermanium oligomers with different side groups were synthesized via ligand substitution polymerization from I, l-dioxane complex of germanium dichloride with different organolithium compounds. The oligomers were isolated through either precipitation from methanol or extraction using toluene with a yield of no less than 50%. The weight average molecular weight (M-w) of the oligomers is ranging from 1.4 x 10(3) to 5.9 x 10(3) depending on the type and alkyl length of the organolithium compounds used.展开更多
The ICP-AES method for the determination of Ge in GdSiGe series alloys was studied.As the three main elements in the alloys,Gd,Si,and Ge differ greatly from each other in chemical properties,it was difficult to pretre...The ICP-AES method for the determination of Ge in GdSiGe series alloys was studied.As the three main elements in the alloys,Gd,Si,and Ge differ greatly from each other in chemical properties,it was difficult to pretreat the sample.Two decomposition methods were compared,and a mixture of HNO3+HF was used to decompose the sample and the effect of the HF amount on the sample decomposition was examined.The adsorption effect of GdF3 on Ge was discussed.Three GdSiGe series alloy samples were analyzed,and the RSDs of this method were in the range of 0.85%~2.66%.展开更多
In recent years,silicon(Si)and germanium(Ge)materials have been considered as promising highperformance anode materials for lithium-ion batteries due to their high theoretical capacities.It is of great importance to d...In recent years,silicon(Si)and germanium(Ge)materials have been considered as promising highperformance anode materials for lithium-ion batteries due to their high theoretical capacities.It is of great importance to design and synthesize micro/nanostructured Si and Ge materials.In this work,we demonstrated that Si,Ge and SiGe micro/nanowires can be continuously synthesized from their oxides precursors through molten salt electrodeposition.The electrochemical synthesis processes have been investigated systematically,and the deposited Si,Ge and SiGe micro/nanowires have been characterized and compared.The results show that the micro/nanostructured Si and Ge materials with tunable morphology can be facilely and continuously produced via molten salt electrodeposition.The electrodeposition process generally includes calcium oxide-assisted dissolution and electrodeposition processes,and the morphologies of the deposited Si and Ge products can be controlled by varying conditions.Si micro/nanowires,Si films,Ge micro/nanowires,and Ge particles can be continuously synthesized in a controlled manner.展开更多
A new process of enriching germanium from coal ash was developed. The processinvolves in mixing the coal ash and ammonium chloride and then roasting the mixture to producegermanium chloride that is then absorbed by di...A new process of enriching germanium from coal ash was developed. The processinvolves in mixing the coal ash and ammonium chloride and then roasting the mixture to producegermanium chloride that is then absorbed by dilute hydrochloric acid and hydrolyzed to germaniumoxide. The germanium recovery reached to 80.2% at the optimum condition: mass ratio of NH_4Cl/coalash is 0.15, roasting temperature 400℃ and roasting time 90 min.展开更多
Rare event search experiments are one of the most important topics in the field of fundamental physics,and high-purity germanium(HPGe)detectors with an ultralow radioactive background are frequently used for such expe...Rare event search experiments are one of the most important topics in the field of fundamental physics,and high-purity germanium(HPGe)detectors with an ultralow radioactive background are frequently used for such experiments.However,cosmogenic activation contaminates germanium crystals during transport and storage.In this study,we investigated the movable shielding containers of HPGe crystals using Geant4 and CRY Monte Carlo simulations.The production rates of 68Ge,65Zn,60Co,55Fe,and 3H were obtained individually for different types of cosmic rays.The validity of the simulation was confirmed through a comparison with the available experimental data.Based on this simulation,we found that the interactions induced by neutrons contribute to approximately 90%of the production rate of cosmogenic activation.In addition,by adding an optimized shielding structure,the production rates of cosmogenic radionuclides are reduced by about one order of magnitude.Our results show that it is feasible to use a shielding container to reduce the cosmogenic radioactivity produced during the transport and storage of high-purity germanium on the ground.展开更多
The mineralization is related closely to sedimentation, diagenesis and hydrothermal processes. In this paper, investigations are carried out on coal occurrence, maceral composition, inorganic minerals, trace elements ...The mineralization is related closely to sedimentation, diagenesis and hydrothermal processes. In this paper, investigations are carried out on coal occurrence, maceral composition, inorganic minerals, trace elements and huminite reflectance. It is concluded that the source of Lincang superlarge deposit is mainly the muscovite granite in the west edge of the basin. During sedimentation, Ge (germanium) was leached out and entered the basin. Ge was adsorbed by lower organism and humic substances in water. Lincang lignite underwent three thermal processes: peatification, early diagenesis and hydrothermal transformation. During peatification, Ge was adsorbed or complexed by humic colloids. During early diagenesis, the Ge associated with humic acids was hard to mobilize or transport. Most of Ge entered the structure of huminite while a small amount of Ge was associated with residual humic acids as complex or humate. During hydrothermal transformation, the heated natural water or deep fluid from basement encountered the coal layer within tectonic weak zone. SO 2- 4 was reduced by coal organic matter. Pyrite and calcite formed. Hydrothermal process did not contribute significantly to mineralization.展开更多
Magnetite is a very common mineral in various types of iron deposits and some sulfide deposits. Recent studies have focused on the use of trace elements in magnetite to discriminate ore types or trace ore-forming proc...Magnetite is a very common mineral in various types of iron deposits and some sulfide deposits. Recent studies have focused on the use of trace elements in magnetite to discriminate ore types or trace ore-forming process. Germanium is a disperse element in the crust, but sometimes is not rare in magnetite. Germanium in magnetite can be determined by laser ablation ICP-MS due to its low detection limit(0.0X ppm). In this study, we summary the Ge data of magnetite from magmatic deposits, iron formations, skarn deposits, iron oxide copper-gold deposits, and igneous derived hydrothermal deposits. Magnetite from iron formations contains relatively high Ge(up to ~250 ppm), whereas those from all other deposits mostly contains Ge less than 10 ppm, indicating that iron formations can be discriminated from other Fe deposits by Ge contents. Germanium in magmatic/hydrothermal magnetite is controlled by a few factors. Primary magma/fluid composition may be the major control of Ge in magnetite. Higher oxygen fugacity may be beneficial to Ge partition into magnetite. Sulfur fugacity and temperature may have little effect on Ge in magnetite. The enrichment mechanism of Ge in magnetite from iron formations remains unknown due to the complex ore genesis. Germanium along with other elements(Mn, Ni, Ga) and element ratios(Ge/Ga and Ge/Si raios) can distinguish different types of deposits, indicating that Ge can be used as a discriminate factor like Ti and V. Because of the availability of in situ analytical technique like laser ablation ICP-MS, in situ Ge/Si ratio of magnetite can serve as a geochemical tracer and may provide new constraints on the genesis of banded iron formations.展开更多
The extraction separation of germanium from indium raffinate in hydrometallurgical zinc process was discussed. The conditions and mechanism of the extraction with hydroxamic acid HGS98 have been investigated in detail...The extraction separation of germanium from indium raffinate in hydrometallurgical zinc process was discussed. The conditions and mechanism of the extraction with hydroxamic acid HGS98 have been investigated in detail. The results show that u sing 2% (mass fraction) hydroxamic acid HGS98 and 5% D 2EHPA as synergist, germanium is extracted (1 stage) over 99% in 5 min at phase ratio ( V o∶ V a) of 1∶5 from indium raffinate with original acidity. Then, using 2 mol·L -1 NH 4F as strip liquor, the stripping recovery is over 98% in 15 min at phase ratio of 1∶1. This process has the following advantages:easy to operate, high recovery and selectivity, and lower investment cost. It provides a new way to recover rare metal-germanium from metallurgical spent residues.展开更多
The ultralow detection threshold,ultralow intrinsic background,and excellent energy resolution of ptype point-contact germanium detectors are important for rare-event searches,in particular for the detection of direct...The ultralow detection threshold,ultralow intrinsic background,and excellent energy resolution of ptype point-contact germanium detectors are important for rare-event searches,in particular for the detection of direct dark matter interactions,coherent elastic neutrino-nucleus scattering,and neutrinoless double beta decay.Anomalous bulk events with an extremely fast rise time are observed in the CDEX-1B detector.We report a method of extracting fast bulk events from bulk events using a pulse shape simulation and reconstructed source experiment signature.Calibration data and the distribution of X-rays generated by intrinsic radioactivity verified that the fast bulk experienced a single hit near the passivation layer.The performance of this germanium detector indicates that it is capable of single-hit bulk spatial resolution and thus provides a background removal technique.展开更多
The synthesis and in vitro photodynamic anticancer activity of a new photosen- sitizer, tetra(trifluoroethoxy) germanium phthalocyanine (GePcF), were studied. GePcF was characterized by UV-Vis, IR, MS and elementa...The synthesis and in vitro photodynamic anticancer activity of a new photosen- sitizer, tetra(trifluoroethoxy) germanium phthalocyanine (GePcF), were studied. GePcF was characterized by UV-Vis, IR, MS and elemental analysis. The in vitro photodynamic activity of GePcF was studied by MTT. IC50 of GePcF for SW480 cells of human colonic adenocarcinoma and HeLa cells of cervical cancer were 36.53 and 45.78 μmol/L, respectively. GePcF as a photosensitizer may be used to treat cancers due to its photodyrmmic anticancer activity.展开更多
This paper reports that the high-K HfO2 gate dielectrics are fabricated on n-germanium substrates by sputtering Hf on Ge and following by a furnace annealing. The impacts of sputtering ambient, annealing ambient and a...This paper reports that the high-K HfO2 gate dielectrics are fabricated on n-germanium substrates by sputtering Hf on Ge and following by a furnace annealing. The impacts of sputtering ambient, annealing ambient and annealing temperature on the electrical properties of high-K HfO2 gate dielectrics on germanium substrates are investigated. Experimental results indicate that high-K HfO2 gate dielectrics on germanium substrates with good electrical characteristics are obtained, the electrical properties of high-K HfO2 gate dielectrics is strongly correlated with sputtering ambient, annealing ambient and annealing temperature.展开更多
The high strength, radiation hardness and cost-effectiveness make Germanium the substrate of choice for high-efficiency multi-junction solar cells for space applications. Numerical modeling and large-scale simulation ...The high strength, radiation hardness and cost-effectiveness make Germanium the substrate of choice for high-efficiency multi-junction solar cells for space applications. Numerical modeling and large-scale simulation are important and indispensable tools in the analysis and development of crystal growth process. In this study, germanium single crystals with low dislocation density were produced by Czochralski method by applying the necking technique. Chemical etching pits method was used to measure the dislocation density, and a professional modeling software CrysVUn was used to obtain the thermal-stress distribution. The results show that the thermal-stress of the sample with diameter of 15 mm is nearly equal to that of other samples, so the thermal-stress does not influence the dislocation multiplication. Based on the result, the dislocation density must be strangely increased caused by gravity.展开更多
Compton scattering with bound electrons contributes to a significant atomic effect in low-momentum transfer,yielding background structures in direct light dark matter searches as well as low-energy rare event experime...Compton scattering with bound electrons contributes to a significant atomic effect in low-momentum transfer,yielding background structures in direct light dark matter searches as well as low-energy rare event experiments.We report the measurement of Compton scattering in low-momentum transfer by implementing a 10-g germanium detector bombarded by a^(137)Cs source with a radioactivity of 8.7 mCi and a scatter photon captured by a cylindrical NaI(Tl)detector.A fully relativistic impulse approximation combined with multi-configuration Dirac–Fock wavefunctions was evaluated,and the scattering function of Geant4 software was replaced by our calculation results.Our measurements show that the Livermore model with the modified scattering function in Geant4 is in good agreement with the experimental data.It is also revealed that atomic many-body effects significantly influence Compton scattering for low-momentum transfer(sub-keV energy transfer).展开更多
We report a large-scale, high-quality heterostructure composed of vertically-stacked graphene and two-dimensional(2D) germanium.The heterostructure is constructed by the intercalation-assisted technique.We first synth...We report a large-scale, high-quality heterostructure composed of vertically-stacked graphene and two-dimensional(2D) germanium.The heterostructure is constructed by the intercalation-assisted technique.We first synthesize large-scale,single-crystalline graphene on Ir(111) surface and then intercalate germanium at the interface of graphene and Ir(111).The intercalated germanium forms a well-defined 2D layer with a 2 × 2 superstructure with respect to Ir(111).Theoretical calculations demonstrate that the 2D germanium has a double-layer structure.Raman characterizations show that the 2D germanium effectively weakens the interaction between graphene and Ir substrate, making graphene more like the intrinsic one.Further experiments of low-energy electron diffraction, scanning tunneling microscopy, and x-ray photoelectron spectroscopy(XPS) confirm the formation of large-scale and high-quality graphene/2D-germanium vertical heterostructure.The integration of graphene with a traditional 2D semiconductor provides a platform to explore new physical phenomena in the future.展开更多
The point-contact high-purity germanium detector(HPGe)has the advantages of low background,low energy threshold,and high energy resolution and can be applied in the detection of rare-event physics.However,the performa...The point-contact high-purity germanium detector(HPGe)has the advantages of low background,low energy threshold,and high energy resolution and can be applied in the detection of rare-event physics.However,the performance of HPGe must be further improved to achieve superior energy resolution,low noise,and long-term reliability.In this study,we combine computational simulations and experimental comparisons to deeply understand the passivation mechanism of Ge.The surface passivation effect is calculated and inferred from the band structure and density of interface states,and further con-firmed by the minority carrier lifetime.The first-principles method based on the density functional theory was adopted to systematically study the lattice structure,band structure,and density of state(DOS)of four different systems:Ge–H,Ge–Ge-NH 2,Ge-OH,and Ge-SiO_(x).The electronic char-acteristics of the Ge(100)unit cell with different passi-vation groups and Si/O atomic ratios were compared.This shows that H,N,and O atoms can effectively reduce the surface DOS of the Ge atoms.The passivation effect of the SiO_(x) group varied with increasing O atoms and Si/O atomic ratios.Experimentally,SiO and SiO_(2) passivation films were fabricated by electron beam evaporation on a Ge substrate,and the valence state of Si and resistivity was measured to characterize the film.The minority carrier lifetime of Ge-SiO_(2) is 21.3 ls,which is approximately quadruple that of Ge-SiO.The passivation effect and mechanism are discussed in terms of hopping conduction and surface defect density.This study builds a relationship between the passivation effect and different termination groups,and provides technical support for the potential passivation layer,which can be applied in Ge detectors with ultralow energy thresholds and especially in HPGe for rare-event physics detection experiments in future.展开更多
Interface roughness strongly influences the performance of germanium metal-organic-semiconductor field effect transistors (MOSFETs). In this paper, a 2D full-band Monte Carlo simulator is used to study the impact of...Interface roughness strongly influences the performance of germanium metal-organic-semiconductor field effect transistors (MOSFETs). In this paper, a 2D full-band Monte Carlo simulator is used to study the impact of interface roughness scattering on electron and hole transport properties in long- and short- channel Ge MOSFETs inversion layers. The carrier effective mobility in the channel of Ge MOSFETs and the in non-equilibriurn transport properties are investigated. Results show that both electron and hole mobility are strongly influenced by interface roughness scattering. The output curves for 50 nm channel-length double gate n and p Ge MOSFET show that the drive currents of n- and p-Ge MOSFETs have significant improvement compared with that of Si n- and p-MOSFETs with smooth interface between channel and gate dielectric. The 82% and 96% drive current enhancement are obtained for the n- and p-MOSFETs with the completely smooth interface. However, the enhancement decreases sharply with the increase of interface roughness. With the very rough interface, the drive currents of Ge MOSFETs are even less than that of Si MOSFETs. Moreover, the significant velocity overshoot also has been found in Ge MOSFETs.展开更多
The thermostability and the interference-resisting property of germanium (Ge) in graphite furnace atomic absorption spectrometry (GF.AAS) were increased remarkably when palladium and lithium nitrates were used as comp...The thermostability and the interference-resisting property of germanium (Ge) in graphite furnace atomic absorption spectrometry (GF.AAS) were increased remarkably when palladium and lithium nitrates were used as complexing matrix modifiers and barium nitrate as supplementary matrix modifier.展开更多
基金This work was supported by the National Key R&D Program of China(Nos.2022YFF0709503,2022YFB1902700,2017YFC0602101)the Key Research and Development Program of Sichuan province(No.2023YFG0347)the Key Research and Development Program of Sichuan province(No.2020ZDZX0007).
文摘To detect radioactive substances with low activity levels,an anticoincidence detector and a high-purity germanium(HPGe)detector are typically used simultaneously to suppress Compton scattering background,thereby resulting in an extremely low detection limit and improving the measurement accuracy.However,the complex and expensive hardware required does not facilitate the application or promotion of this method.Thus,a method is proposed in this study to discriminate the digital waveform of pulse signals output using an HPGe detector,whereby Compton scattering background is suppressed and a low minimum detectable activity(MDA)is achieved without using an expensive and complex anticoincidence detector and device.The electric-field-strength and energy-deposition distributions of the detector are simulated to determine the relationship between pulse shape and energy-deposition location,as well as the characteristics of energy-deposition distributions for fulland partial-energy deposition events.This relationship is used to develop a pulse-shape-discrimination algorithm based on an artificial neural network for pulse-feature identification.To accurately determine the relationship between the deposited energy of gamma(γ)rays in the detector and the deposition location,we extract four shape parameters from the pulse signals output by the detector.Machine learning is used to input the four shape parameters into the detector.Subsequently,the pulse signals are identified and classified to discriminate between partial-and full-energy deposition events.Some partial-energy deposition events are removed to suppress Compton scattering.The proposed method effectively decreases the MDA of an HPGeγ-energy dispersive spectrometer.Test results show that the Compton suppression factors for energy spectra obtained from measurements on ^(152)Eu,^(137)Cs,and ^(60)Co radioactive sources are 1.13(344 keV),1.11(662 keV),and 1.08(1332 keV),respectively,and that the corresponding MDAs are 1.4%,5.3%,and 21.6%lower,respectively.
基金supported by the National Key Research and Development Program of China(2020YFB2206103)National Natural Science Foundation of China(61975196)Youth Innovation Promotion Association Chinese Academy of Sciences(2021111)。
文摘High-performance germanium(Ge)waveguide photodetectors are designed and fabricated utilizing the inductivegain-peaking technique.With the appropriate integrated inductors,the 3-dB bandwidth of photodetectors is significantly improved owing to the inductive-gain-peaking effect without any compromises to the dark current and optical responsivity.Measured 3-dB bandwidth up to 75 GHz is realized and clear open eye diagrams at 64 Gbps are observed.In this work,the relationship between the frequency response and large signal transmission characteristics on the integrated inductors of Ge waveguide photodetectors is investigated,which indicates the high-speed performance of photodetectors using the inductive-gainpeaking technique.
文摘The process of thermal stress damage during 1080 nm laser ablation of single-crystal germanium was recorded in real time using a high-speed charge-coupled device.A three-dimensional finite element numerical model based on Fourier's heat conduction equation,Hooke's law and the Alexander–Hasson equation was developed to analyze the thermal stress damage mechanism involved.The damage morphology of the ablated samples was observed using an optical microscope.The results show that the cooling process has an important influence on fracture in the laser-irradiated region of single-crystal germanium.Fracture is the result of a combination of thermal stress and reduction in local yield strength.
基金This project of 29504030 was supported by the National Natural Science Foundation of China
文摘Some organogermanium oligomers with different side groups were synthesized via ligand substitution polymerization from I, l-dioxane complex of germanium dichloride with different organolithium compounds. The oligomers were isolated through either precipitation from methanol or extraction using toluene with a yield of no less than 50%. The weight average molecular weight (M-w) of the oligomers is ranging from 1.4 x 10(3) to 5.9 x 10(3) depending on the type and alkyl length of the organolithium compounds used.
基金Project supported by the New Technology and New Method Item of Ministry of Science and Technology of PRC(2005JG200030)
文摘The ICP-AES method for the determination of Ge in GdSiGe series alloys was studied.As the three main elements in the alloys,Gd,Si,and Ge differ greatly from each other in chemical properties,it was difficult to pretreat the sample.Two decomposition methods were compared,and a mixture of HNO3+HF was used to decompose the sample and the effect of the HF amount on the sample decomposition was examined.The adsorption effect of GdF3 on Ge was discussed.Three GdSiGe series alloy samples were analyzed,and the RSDs of this method were in the range of 0.85%~2.66%.
基金the Shanghai Rising-Star Program(19QA1403600)the National Natural Science Foundation of China(Nos.51974181+2 种基金51574164)the Iron and Steel Joint Research Found of National Natural Science Foundation and China Baowu Steel Group Corporation Limited(U1860203)the authors also thank the CAS Interdisciplinary In novation Team for financial support.
文摘In recent years,silicon(Si)and germanium(Ge)materials have been considered as promising highperformance anode materials for lithium-ion batteries due to their high theoretical capacities.It is of great importance to design and synthesize micro/nanostructured Si and Ge materials.In this work,we demonstrated that Si,Ge and SiGe micro/nanowires can be continuously synthesized from their oxides precursors through molten salt electrodeposition.The electrochemical synthesis processes have been investigated systematically,and the deposited Si,Ge and SiGe micro/nanowires have been characterized and compared.The results show that the micro/nanostructured Si and Ge materials with tunable morphology can be facilely and continuously produced via molten salt electrodeposition.The electrodeposition process generally includes calcium oxide-assisted dissolution and electrodeposition processes,and the morphologies of the deposited Si and Ge products can be controlled by varying conditions.Si micro/nanowires,Si films,Ge micro/nanowires,and Ge particles can be continuously synthesized in a controlled manner.
基金This project is financially supported by the National Nature Science Foundation of China (No. 59804004) and (No.50274046)
文摘A new process of enriching germanium from coal ash was developed. The processinvolves in mixing the coal ash and ammonium chloride and then roasting the mixture to producegermanium chloride that is then absorbed by dilute hydrochloric acid and hydrolyzed to germaniumoxide. The germanium recovery reached to 80.2% at the optimum condition: mass ratio of NH_4Cl/coalash is 0.15, roasting temperature 400℃ and roasting time 90 min.
基金supported by the National Key Research and Development Program of China(No.2017YFA0402203)the National Natural Science Foundation of China(No.11975162)the Fundamental Research Funds for Central Universities(No.20822041C4030)。
文摘Rare event search experiments are one of the most important topics in the field of fundamental physics,and high-purity germanium(HPGe)detectors with an ultralow radioactive background are frequently used for such experiments.However,cosmogenic activation contaminates germanium crystals during transport and storage.In this study,we investigated the movable shielding containers of HPGe crystals using Geant4 and CRY Monte Carlo simulations.The production rates of 68Ge,65Zn,60Co,55Fe,and 3H were obtained individually for different types of cosmic rays.The validity of the simulation was confirmed through a comparison with the available experimental data.Based on this simulation,we found that the interactions induced by neutrons contribute to approximately 90%of the production rate of cosmogenic activation.In addition,by adding an optimized shielding structure,the production rates of cosmogenic radionuclides are reduced by about one order of magnitude.Our results show that it is feasible to use a shielding container to reduce the cosmogenic radioactivity produced during the transport and storage of high-purity germanium on the ground.
文摘The mineralization is related closely to sedimentation, diagenesis and hydrothermal processes. In this paper, investigations are carried out on coal occurrence, maceral composition, inorganic minerals, trace elements and huminite reflectance. It is concluded that the source of Lincang superlarge deposit is mainly the muscovite granite in the west edge of the basin. During sedimentation, Ge (germanium) was leached out and entered the basin. Ge was adsorbed by lower organism and humic substances in water. Lincang lignite underwent three thermal processes: peatification, early diagenesis and hydrothermal transformation. During peatification, Ge was adsorbed or complexed by humic colloids. During early diagenesis, the Ge associated with humic acids was hard to mobilize or transport. Most of Ge entered the structure of huminite while a small amount of Ge was associated with residual humic acids as complex or humate. During hydrothermal transformation, the heated natural water or deep fluid from basement encountered the coal layer within tectonic weak zone. SO 2- 4 was reduced by coal organic matter. Pyrite and calcite formed. Hydrothermal process did not contribute significantly to mineralization.
基金funded by CAS“Light of West China”Program to YMMthe Key project of the National Natural Science Foundation of China(41230316)+3 种基金National Natural Science Foundation of China(41503039)the“CAS Hundred Talents”Project to JFG(Y5CJ038000)Research Initial Funding(Y4KJA20001 and Y5KJA20001)Independent Topics Fund(Y4CJ009000)of the Institute of Geochemistry,Chinese Academy of Sciences
文摘Magnetite is a very common mineral in various types of iron deposits and some sulfide deposits. Recent studies have focused on the use of trace elements in magnetite to discriminate ore types or trace ore-forming process. Germanium is a disperse element in the crust, but sometimes is not rare in magnetite. Germanium in magnetite can be determined by laser ablation ICP-MS due to its low detection limit(0.0X ppm). In this study, we summary the Ge data of magnetite from magmatic deposits, iron formations, skarn deposits, iron oxide copper-gold deposits, and igneous derived hydrothermal deposits. Magnetite from iron formations contains relatively high Ge(up to ~250 ppm), whereas those from all other deposits mostly contains Ge less than 10 ppm, indicating that iron formations can be discriminated from other Fe deposits by Ge contents. Germanium in magmatic/hydrothermal magnetite is controlled by a few factors. Primary magma/fluid composition may be the major control of Ge in magnetite. Higher oxygen fugacity may be beneficial to Ge partition into magnetite. Sulfur fugacity and temperature may have little effect on Ge in magnetite. The enrichment mechanism of Ge in magnetite from iron formations remains unknown due to the complex ore genesis. Germanium along with other elements(Mn, Ni, Ga) and element ratios(Ge/Ga and Ge/Si raios) can distinguish different types of deposits, indicating that Ge can be used as a discriminate factor like Ti and V. Because of the availability of in situ analytical technique like laser ablation ICP-MS, in situ Ge/Si ratio of magnetite can serve as a geochemical tracer and may provide new constraints on the genesis of banded iron formations.
文摘The extraction separation of germanium from indium raffinate in hydrometallurgical zinc process was discussed. The conditions and mechanism of the extraction with hydroxamic acid HGS98 have been investigated in detail. The results show that u sing 2% (mass fraction) hydroxamic acid HGS98 and 5% D 2EHPA as synergist, germanium is extracted (1 stage) over 99% in 5 min at phase ratio ( V o∶ V a) of 1∶5 from indium raffinate with original acidity. Then, using 2 mol·L -1 NH 4F as strip liquor, the stripping recovery is over 98% in 15 min at phase ratio of 1∶1. This process has the following advantages:easy to operate, high recovery and selectivity, and lower investment cost. It provides a new way to recover rare metal-germanium from metallurgical spent residues.
基金supported by the National Key Research and Development Program of China(No.2017YFA0402203)the National Natural Science Foundation of China(No.11975162)the SPARK project of the research and innovation program of Sichuan University(No.2018SCUH0051)。
文摘The ultralow detection threshold,ultralow intrinsic background,and excellent energy resolution of ptype point-contact germanium detectors are important for rare-event searches,in particular for the detection of direct dark matter interactions,coherent elastic neutrino-nucleus scattering,and neutrinoless double beta decay.Anomalous bulk events with an extremely fast rise time are observed in the CDEX-1B detector.We report a method of extracting fast bulk events from bulk events using a pulse shape simulation and reconstructed source experiment signature.Calibration data and the distribution of X-rays generated by intrinsic radioactivity verified that the fast bulk experienced a single hit near the passivation layer.The performance of this germanium detector indicates that it is capable of single-hit bulk spatial resolution and thus provides a background removal technique.
基金Supported by the Natural Science Foundation of Fujian Province(2012J01368)
文摘The synthesis and in vitro photodynamic anticancer activity of a new photosen- sitizer, tetra(trifluoroethoxy) germanium phthalocyanine (GePcF), were studied. GePcF was characterized by UV-Vis, IR, MS and elemental analysis. The in vitro photodynamic activity of GePcF was studied by MTT. IC50 of GePcF for SW480 cells of human colonic adenocarcinoma and HeLa cells of cervical cancer were 36.53 and 45.78 μmol/L, respectively. GePcF as a photosensitizer may be used to treat cancers due to its photodyrmmic anticancer activity.
基金Project supported by the National Natural Science Foundation of China (Grant No 90307006), by the National High Tech. Development Program of China (Grant No 2003AA1Z1370), and by the State Key Development Program for Basic Research of China (Grant No G2000036500).
文摘This paper reports that the high-K HfO2 gate dielectrics are fabricated on n-germanium substrates by sputtering Hf on Ge and following by a furnace annealing. The impacts of sputtering ambient, annealing ambient and annealing temperature on the electrical properties of high-K HfO2 gate dielectrics on germanium substrates are investigated. Experimental results indicate that high-K HfO2 gate dielectrics on germanium substrates with good electrical characteristics are obtained, the electrical properties of high-K HfO2 gate dielectrics is strongly correlated with sputtering ambient, annealing ambient and annealing temperature.
文摘The high strength, radiation hardness and cost-effectiveness make Germanium the substrate of choice for high-efficiency multi-junction solar cells for space applications. Numerical modeling and large-scale simulation are important and indispensable tools in the analysis and development of crystal growth process. In this study, germanium single crystals with low dislocation density were produced by Czochralski method by applying the necking technique. Chemical etching pits method was used to measure the dislocation density, and a professional modeling software CrysVUn was used to obtain the thermal-stress distribution. The results show that the thermal-stress of the sample with diameter of 15 mm is nearly equal to that of other samples, so the thermal-stress does not influence the dislocation multiplication. Based on the result, the dislocation density must be strangely increased caused by gravity.
基金supported by the National Key Research and Development Program of China(No.2017YFA0402203),the National Natural Science Foundation of China(Nos.11975159 and 11975162).
文摘Compton scattering with bound electrons contributes to a significant atomic effect in low-momentum transfer,yielding background structures in direct light dark matter searches as well as low-energy rare event experiments.We report the measurement of Compton scattering in low-momentum transfer by implementing a 10-g germanium detector bombarded by a^(137)Cs source with a radioactivity of 8.7 mCi and a scatter photon captured by a cylindrical NaI(Tl)detector.A fully relativistic impulse approximation combined with multi-configuration Dirac–Fock wavefunctions was evaluated,and the scattering function of Geant4 software was replaced by our calculation results.Our measurements show that the Livermore model with the modified scattering function in Geant4 is in good agreement with the experimental data.It is also revealed that atomic many-body effects significantly influence Compton scattering for low-momentum transfer(sub-keV energy transfer).
基金Project supported by the National Key Research&Development Program of China(Grant Nos.2016YFA0202300 and 2018YFA0305800)the National Natural Science Foundation of China(Grant Nos.61390501,61888102,and 51872284)+2 种基金the Strategic Priority Research Program of Chinese Academy of Sciences(Grant Nos.XDB30000000 and XDB28000000)Beijing Nova Program,China(Grant No.Z181100006218023)the University of Chinese Academy of Sciences
文摘We report a large-scale, high-quality heterostructure composed of vertically-stacked graphene and two-dimensional(2D) germanium.The heterostructure is constructed by the intercalation-assisted technique.We first synthesize large-scale,single-crystalline graphene on Ir(111) surface and then intercalate germanium at the interface of graphene and Ir(111).The intercalated germanium forms a well-defined 2D layer with a 2 × 2 superstructure with respect to Ir(111).Theoretical calculations demonstrate that the 2D germanium has a double-layer structure.Raman characterizations show that the 2D germanium effectively weakens the interaction between graphene and Ir substrate, making graphene more like the intrinsic one.Further experiments of low-energy electron diffraction, scanning tunneling microscopy, and x-ray photoelectron spectroscopy(XPS) confirm the formation of large-scale and high-quality graphene/2D-germanium vertical heterostructure.The integration of graphene with a traditional 2D semiconductor provides a platform to explore new physical phenomena in the future.
基金supported by the National Natural Science Foundation of China Youth Fund(No.12005017)。
文摘The point-contact high-purity germanium detector(HPGe)has the advantages of low background,low energy threshold,and high energy resolution and can be applied in the detection of rare-event physics.However,the performance of HPGe must be further improved to achieve superior energy resolution,low noise,and long-term reliability.In this study,we combine computational simulations and experimental comparisons to deeply understand the passivation mechanism of Ge.The surface passivation effect is calculated and inferred from the band structure and density of interface states,and further con-firmed by the minority carrier lifetime.The first-principles method based on the density functional theory was adopted to systematically study the lattice structure,band structure,and density of state(DOS)of four different systems:Ge–H,Ge–Ge-NH 2,Ge-OH,and Ge-SiO_(x).The electronic char-acteristics of the Ge(100)unit cell with different passi-vation groups and Si/O atomic ratios were compared.This shows that H,N,and O atoms can effectively reduce the surface DOS of the Ge atoms.The passivation effect of the SiO_(x) group varied with increasing O atoms and Si/O atomic ratios.Experimentally,SiO and SiO_(2) passivation films were fabricated by electron beam evaporation on a Ge substrate,and the valence state of Si and resistivity was measured to characterize the film.The minority carrier lifetime of Ge-SiO_(2) is 21.3 ls,which is approximately quadruple that of Ge-SiO.The passivation effect and mechanism are discussed in terms of hopping conduction and surface defect density.This study builds a relationship between the passivation effect and different termination groups,and provides technical support for the potential passivation layer,which can be applied in Ge detectors with ultralow energy thresholds and especially in HPGe for rare-event physics detection experiments in future.
基金Project supported by the National Natural Science Foundation of China (Grant No. 60606013)the National Basic Research Program of China (Grant No. 2006CB302705)
文摘Interface roughness strongly influences the performance of germanium metal-organic-semiconductor field effect transistors (MOSFETs). In this paper, a 2D full-band Monte Carlo simulator is used to study the impact of interface roughness scattering on electron and hole transport properties in long- and short- channel Ge MOSFETs inversion layers. The carrier effective mobility in the channel of Ge MOSFETs and the in non-equilibriurn transport properties are investigated. Results show that both electron and hole mobility are strongly influenced by interface roughness scattering. The output curves for 50 nm channel-length double gate n and p Ge MOSFET show that the drive currents of n- and p-Ge MOSFETs have significant improvement compared with that of Si n- and p-MOSFETs with smooth interface between channel and gate dielectric. The 82% and 96% drive current enhancement are obtained for the n- and p-MOSFETs with the completely smooth interface. However, the enhancement decreases sharply with the increase of interface roughness. With the very rough interface, the drive currents of Ge MOSFETs are even less than that of Si MOSFETs. Moreover, the significant velocity overshoot also has been found in Ge MOSFETs.
文摘The thermostability and the interference-resisting property of germanium (Ge) in graphite furnace atomic absorption spectrometry (GF.AAS) were increased remarkably when palladium and lithium nitrates were used as complexing matrix modifiers and barium nitrate as supplementary matrix modifier.