High-purity germanium(HPGe)detectors,which are used for direct dark matter detection,have the advantages of a low threshold and excellent energy resolution.The surface passivation of HPGe has become crucial for achiev...High-purity germanium(HPGe)detectors,which are used for direct dark matter detection,have the advantages of a low threshold and excellent energy resolution.The surface passivation of HPGe has become crucial for achieving an extremely low energy threshold.In this study,first-principles simulations,passivation film preparation,and metal oxide semiconductor(MOS)capacitor characterization were combined to study surface passivation.Theoretical calculations of the energy band structure of the -H,-OH,and -NH_(2) passivation groups on the surface of Ge were performed,and the interface state density and potential with five different passivation groups with N/O atomic ratios were accurately analyzed to obtain a stable surface state.Based on the theoretical calculation results,the surface passivation layers of the Ge_(2)ON_(2) film were prepared via magnetron sputtering in accordance with the optimum atomic ratio structure.The microstructure,C-V,and I-V electrical properties of the layers,and the passivation effect of the Al/Ge_(2)ON_(2)/Ge MOS were characterized to test the interface state density.The mean interface state density obtained by the Terman method was 8.4×10^(11) cm^(-2) eV^(-1).The processing of germanium oxynitrogen passivation films is expected to be used in direct dark matter detection of the HPGe detector surface passivation technology to reduce the detector leakage currents.展开更多
The growth of high-quality germanium tin(Ge_(1–y)Sn_(y))binary alloys on a Si substrate using chemical vapor deposition(CVD)techniques holds immense potential for advancing electronics and optoelectronics application...The growth of high-quality germanium tin(Ge_(1–y)Sn_(y))binary alloys on a Si substrate using chemical vapor deposition(CVD)techniques holds immense potential for advancing electronics and optoelectronics applications,including the development of efficient and low-cost mid-infrared detectors and light sources.However,achieving precise control over the Sn concentration and strain relaxation of the Ge_(1–y)Sn_(y)epilayer,which directly influence its optical and electrical properties,remain a significant challenge.In this research,the effect of strain relaxation on the growth rate of Ge_(1–y)Sn_(y)epilayers,with Sn concentration>11at.%,is investigated.It is successfully demonstrated that the growth rate slows down by~55%due to strain relaxation after passing its critical thickness,which suggests a reduction in the incorporation of Ge into Ge_(1–y)Sn_(y)growing layers.Despite the increase in Sn concentration as a result of the decrease in the growth rate,it has been found that the Sn incorporation rate into Ge_(1–y)Sn_(y)growing layers has also decreased due to strain relaxation.Such valuable insights could offer a foundation for the development of innovative growth techniques aimed at achieving high-quality Ge_(1–y)Sn_(y)epilayers with tuned Sn concentration and strain relaxation.展开更多
To detect radioactive substances with low activity levels,an anticoincidence detector and a high-purity germanium(HPGe)detector are typically used simultaneously to suppress Compton scattering background,thereby resul...To detect radioactive substances with low activity levels,an anticoincidence detector and a high-purity germanium(HPGe)detector are typically used simultaneously to suppress Compton scattering background,thereby resulting in an extremely low detection limit and improving the measurement accuracy.However,the complex and expensive hardware required does not facilitate the application or promotion of this method.Thus,a method is proposed in this study to discriminate the digital waveform of pulse signals output using an HPGe detector,whereby Compton scattering background is suppressed and a low minimum detectable activity(MDA)is achieved without using an expensive and complex anticoincidence detector and device.The electric-field-strength and energy-deposition distributions of the detector are simulated to determine the relationship between pulse shape and energy-deposition location,as well as the characteristics of energy-deposition distributions for fulland partial-energy deposition events.This relationship is used to develop a pulse-shape-discrimination algorithm based on an artificial neural network for pulse-feature identification.To accurately determine the relationship between the deposited energy of gamma(γ)rays in the detector and the deposition location,we extract four shape parameters from the pulse signals output by the detector.Machine learning is used to input the four shape parameters into the detector.Subsequently,the pulse signals are identified and classified to discriminate between partial-and full-energy deposition events.Some partial-energy deposition events are removed to suppress Compton scattering.The proposed method effectively decreases the MDA of an HPGeγ-energy dispersive spectrometer.Test results show that the Compton suppression factors for energy spectra obtained from measurements on ^(152)Eu,^(137)Cs,and ^(60)Co radioactive sources are 1.13(344 keV),1.11(662 keV),and 1.08(1332 keV),respectively,and that the corresponding MDAs are 1.4%,5.3%,and 21.6%lower,respectively.展开更多
Understanding the hydrochemical characteristics and genesis mechanisms of strontium-rich groundwater is pivotal for supporting the exploitation and utilization of natural strontium-rich groundwater.In this research,27...Understanding the hydrochemical characteristics and genesis mechanisms of strontium-rich groundwater is pivotal for supporting the exploitation and utilization of natural strontium-rich groundwater.In this research,27 groundwater samples were collected.By analyzing major ion chemistry and strontium isotope data,and considering the hydrogeological context,various analytical approaches,including multivariate statistics,ion ratios,and isotopes,were used to reveal the characteristics and genesis mechanisms of strontium-rich groundwater in the study area.The findings indicate that the predominant hydrochemical type of groundwater is HCO_(3)-Ca,with Ca^(2+)and HCO_(3)^(-)as the primary cations and anions.The hydrochemistry of the strontium-rich groundwater is predominantly influenced by rock weathering processes.A combination of factors,including ion exchange,and anthropogenic activities,shapes the compositional characteristics of the groundwater in the region.The dissolution of calcite due to weathering emerges as the principal source of strontium in the groundwater.While ion exchange processes are not conducive to strontium enrichment in groundwater,their effect is relatively limited.The impact of human activities on the groundwater is minor.展开更多
High-performance germanium(Ge)waveguide photodetectors are designed and fabricated utilizing the inductivegain-peaking technique.With the appropriate integrated inductors,the 3-dB bandwidth of photodetectors is signif...High-performance germanium(Ge)waveguide photodetectors are designed and fabricated utilizing the inductivegain-peaking technique.With the appropriate integrated inductors,the 3-dB bandwidth of photodetectors is significantly improved owing to the inductive-gain-peaking effect without any compromises to the dark current and optical responsivity.Measured 3-dB bandwidth up to 75 GHz is realized and clear open eye diagrams at 64 Gbps are observed.In this work,the relationship between the frequency response and large signal transmission characteristics on the integrated inductors of Ge waveguide photodetectors is investigated,which indicates the high-speed performance of photodetectors using the inductive-gainpeaking technique.展开更多
The process of thermal stress damage during 1080 nm laser ablation of single-crystal germanium was recorded in real time using a high-speed charge-coupled device.A three-dimensional finite element numerical model base...The process of thermal stress damage during 1080 nm laser ablation of single-crystal germanium was recorded in real time using a high-speed charge-coupled device.A three-dimensional finite element numerical model based on Fourier's heat conduction equation,Hooke's law and the Alexander–Hasson equation was developed to analyze the thermal stress damage mechanism involved.The damage morphology of the ablated samples was observed using an optical microscope.The results show that the cooling process has an important influence on fracture in the laser-irradiated region of single-crystal germanium.Fracture is the result of a combination of thermal stress and reduction in local yield strength.展开更多
The hollow strontium carbonate pompons was synthesized for the first time by a controlled reaction precipitation method with sodium dodecyl benzene sulfonate(SDBS)and polyvinyl pyrrolidone(PVP)work together as templat...The hollow strontium carbonate pompons was synthesized for the first time by a controlled reaction precipitation method with sodium dodecyl benzene sulfonate(SDBS)and polyvinyl pyrrolidone(PVP)work together as template.The sampled particles were characterized by scanning electron microscopy(SEM),transmission electron microscopy(TEM),nitrogen adsorption-desorption measurement,X-ray diffraction(XRD),Energy dispersive X-Ray spectroscopy(EDX),Fourier transform infrared spectroscopy(FTIR),Thermogravimetric analysis and differential scanning calorimetry(TGA-DSC),etc.It is shown that the assynthesized hollow strontium carbonate pompons with the size of about 2μm consist of flake-like particles under the optimal reaction conditions.The formation mechanism of hollow strontium carbonate pompons was preliminarily explored.展开更多
基金supported by the National Natural Science Foundation of China(No.12005017).
文摘High-purity germanium(HPGe)detectors,which are used for direct dark matter detection,have the advantages of a low threshold and excellent energy resolution.The surface passivation of HPGe has become crucial for achieving an extremely low energy threshold.In this study,first-principles simulations,passivation film preparation,and metal oxide semiconductor(MOS)capacitor characterization were combined to study surface passivation.Theoretical calculations of the energy band structure of the -H,-OH,and -NH_(2) passivation groups on the surface of Ge were performed,and the interface state density and potential with five different passivation groups with N/O atomic ratios were accurately analyzed to obtain a stable surface state.Based on the theoretical calculation results,the surface passivation layers of the Ge_(2)ON_(2) film were prepared via magnetron sputtering in accordance with the optimum atomic ratio structure.The microstructure,C-V,and I-V electrical properties of the layers,and the passivation effect of the Al/Ge_(2)ON_(2)/Ge MOS were characterized to test the interface state density.The mean interface state density obtained by the Terman method was 8.4×10^(11) cm^(-2) eV^(-1).The processing of germanium oxynitrogen passivation films is expected to be used in direct dark matter detection of the HPGe detector surface passivation technology to reduce the detector leakage currents.
文摘The growth of high-quality germanium tin(Ge_(1–y)Sn_(y))binary alloys on a Si substrate using chemical vapor deposition(CVD)techniques holds immense potential for advancing electronics and optoelectronics applications,including the development of efficient and low-cost mid-infrared detectors and light sources.However,achieving precise control over the Sn concentration and strain relaxation of the Ge_(1–y)Sn_(y)epilayer,which directly influence its optical and electrical properties,remain a significant challenge.In this research,the effect of strain relaxation on the growth rate of Ge_(1–y)Sn_(y)epilayers,with Sn concentration>11at.%,is investigated.It is successfully demonstrated that the growth rate slows down by~55%due to strain relaxation after passing its critical thickness,which suggests a reduction in the incorporation of Ge into Ge_(1–y)Sn_(y)growing layers.Despite the increase in Sn concentration as a result of the decrease in the growth rate,it has been found that the Sn incorporation rate into Ge_(1–y)Sn_(y)growing layers has also decreased due to strain relaxation.Such valuable insights could offer a foundation for the development of innovative growth techniques aimed at achieving high-quality Ge_(1–y)Sn_(y)epilayers with tuned Sn concentration and strain relaxation.
基金This work was supported by the National Key R&D Program of China(Nos.2022YFF0709503,2022YFB1902700,2017YFC0602101)the Key Research and Development Program of Sichuan province(No.2023YFG0347)the Key Research and Development Program of Sichuan province(No.2020ZDZX0007).
文摘To detect radioactive substances with low activity levels,an anticoincidence detector and a high-purity germanium(HPGe)detector are typically used simultaneously to suppress Compton scattering background,thereby resulting in an extremely low detection limit and improving the measurement accuracy.However,the complex and expensive hardware required does not facilitate the application or promotion of this method.Thus,a method is proposed in this study to discriminate the digital waveform of pulse signals output using an HPGe detector,whereby Compton scattering background is suppressed and a low minimum detectable activity(MDA)is achieved without using an expensive and complex anticoincidence detector and device.The electric-field-strength and energy-deposition distributions of the detector are simulated to determine the relationship between pulse shape and energy-deposition location,as well as the characteristics of energy-deposition distributions for fulland partial-energy deposition events.This relationship is used to develop a pulse-shape-discrimination algorithm based on an artificial neural network for pulse-feature identification.To accurately determine the relationship between the deposited energy of gamma(γ)rays in the detector and the deposition location,we extract four shape parameters from the pulse signals output by the detector.Machine learning is used to input the four shape parameters into the detector.Subsequently,the pulse signals are identified and classified to discriminate between partial-and full-energy deposition events.Some partial-energy deposition events are removed to suppress Compton scattering.The proposed method effectively decreases the MDA of an HPGeγ-energy dispersive spectrometer.Test results show that the Compton suppression factors for energy spectra obtained from measurements on ^(152)Eu,^(137)Cs,and ^(60)Co radioactive sources are 1.13(344 keV),1.11(662 keV),and 1.08(1332 keV),respectively,and that the corresponding MDAs are 1.4%,5.3%,and 21.6%lower,respectively.
基金supported by the Guangxi Natural Science Foundation(2020GXNSFAA297025)the Guangxi Natural Science Foundation(GuikeAB22080046)+3 种基金the Guangxi Natural Science Foundation(GuikeAB21196050)the National Natural Science Foundation of China(42177075)the Natural Resources Science and Technology Strategic Research Project(2023-ZL-23)the Survey and China Geological Survey(DD20221808 and DD20230547).
文摘Understanding the hydrochemical characteristics and genesis mechanisms of strontium-rich groundwater is pivotal for supporting the exploitation and utilization of natural strontium-rich groundwater.In this research,27 groundwater samples were collected.By analyzing major ion chemistry and strontium isotope data,and considering the hydrogeological context,various analytical approaches,including multivariate statistics,ion ratios,and isotopes,were used to reveal the characteristics and genesis mechanisms of strontium-rich groundwater in the study area.The findings indicate that the predominant hydrochemical type of groundwater is HCO_(3)-Ca,with Ca^(2+)and HCO_(3)^(-)as the primary cations and anions.The hydrochemistry of the strontium-rich groundwater is predominantly influenced by rock weathering processes.A combination of factors,including ion exchange,and anthropogenic activities,shapes the compositional characteristics of the groundwater in the region.The dissolution of calcite due to weathering emerges as the principal source of strontium in the groundwater.While ion exchange processes are not conducive to strontium enrichment in groundwater,their effect is relatively limited.The impact of human activities on the groundwater is minor.
基金supported by the National Key Research and Development Program of China(2020YFB2206103)National Natural Science Foundation of China(61975196)Youth Innovation Promotion Association Chinese Academy of Sciences(2021111)。
文摘High-performance germanium(Ge)waveguide photodetectors are designed and fabricated utilizing the inductivegain-peaking technique.With the appropriate integrated inductors,the 3-dB bandwidth of photodetectors is significantly improved owing to the inductive-gain-peaking effect without any compromises to the dark current and optical responsivity.Measured 3-dB bandwidth up to 75 GHz is realized and clear open eye diagrams at 64 Gbps are observed.In this work,the relationship between the frequency response and large signal transmission characteristics on the integrated inductors of Ge waveguide photodetectors is investigated,which indicates the high-speed performance of photodetectors using the inductive-gainpeaking technique.
文摘The process of thermal stress damage during 1080 nm laser ablation of single-crystal germanium was recorded in real time using a high-speed charge-coupled device.A three-dimensional finite element numerical model based on Fourier's heat conduction equation,Hooke's law and the Alexander–Hasson equation was developed to analyze the thermal stress damage mechanism involved.The damage morphology of the ablated samples was observed using an optical microscope.The results show that the cooling process has an important influence on fracture in the laser-irradiated region of single-crystal germanium.Fracture is the result of a combination of thermal stress and reduction in local yield strength.
基金Funded by the National Natural Science Foundation of China(No.22002143)the Natural Science Foundation of Shanxi Province of China(No.201901D211223)the Postgraduate Students Scientific Research Project of North University of China(No.20201766)。
文摘The hollow strontium carbonate pompons was synthesized for the first time by a controlled reaction precipitation method with sodium dodecyl benzene sulfonate(SDBS)and polyvinyl pyrrolidone(PVP)work together as template.The sampled particles were characterized by scanning electron microscopy(SEM),transmission electron microscopy(TEM),nitrogen adsorption-desorption measurement,X-ray diffraction(XRD),Energy dispersive X-Ray spectroscopy(EDX),Fourier transform infrared spectroscopy(FTIR),Thermogravimetric analysis and differential scanning calorimetry(TGA-DSC),etc.It is shown that the assynthesized hollow strontium carbonate pompons with the size of about 2μm consist of flake-like particles under the optimal reaction conditions.The formation mechanism of hollow strontium carbonate pompons was preliminarily explored.
