To detect radioactive substances with low activity levels,an anticoincidence detector and a high-purity germanium(HPGe)detector are typically used simultaneously to suppress Compton scattering background,thereby resul...To detect radioactive substances with low activity levels,an anticoincidence detector and a high-purity germanium(HPGe)detector are typically used simultaneously to suppress Compton scattering background,thereby resulting in an extremely low detection limit and improving the measurement accuracy.However,the complex and expensive hardware required does not facilitate the application or promotion of this method.Thus,a method is proposed in this study to discriminate the digital waveform of pulse signals output using an HPGe detector,whereby Compton scattering background is suppressed and a low minimum detectable activity(MDA)is achieved without using an expensive and complex anticoincidence detector and device.The electric-field-strength and energy-deposition distributions of the detector are simulated to determine the relationship between pulse shape and energy-deposition location,as well as the characteristics of energy-deposition distributions for fulland partial-energy deposition events.This relationship is used to develop a pulse-shape-discrimination algorithm based on an artificial neural network for pulse-feature identification.To accurately determine the relationship between the deposited energy of gamma(γ)rays in the detector and the deposition location,we extract four shape parameters from the pulse signals output by the detector.Machine learning is used to input the four shape parameters into the detector.Subsequently,the pulse signals are identified and classified to discriminate between partial-and full-energy deposition events.Some partial-energy deposition events are removed to suppress Compton scattering.The proposed method effectively decreases the MDA of an HPGeγ-energy dispersive spectrometer.Test results show that the Compton suppression factors for energy spectra obtained from measurements on ^(152)Eu,^(137)Cs,and ^(60)Co radioactive sources are 1.13(344 keV),1.11(662 keV),and 1.08(1332 keV),respectively,and that the corresponding MDAs are 1.4%,5.3%,and 21.6%lower,respectively.展开更多
High-performance germanium(Ge)waveguide photodetectors are designed and fabricated utilizing the inductivegain-peaking technique.With the appropriate integrated inductors,the 3-dB bandwidth of photodetectors is signif...High-performance germanium(Ge)waveguide photodetectors are designed and fabricated utilizing the inductivegain-peaking technique.With the appropriate integrated inductors,the 3-dB bandwidth of photodetectors is significantly improved owing to the inductive-gain-peaking effect without any compromises to the dark current and optical responsivity.Measured 3-dB bandwidth up to 75 GHz is realized and clear open eye diagrams at 64 Gbps are observed.In this work,the relationship between the frequency response and large signal transmission characteristics on the integrated inductors of Ge waveguide photodetectors is investigated,which indicates the high-speed performance of photodetectors using the inductive-gainpeaking technique.展开更多
The process of thermal stress damage during 1080 nm laser ablation of single-crystal germanium was recorded in real time using a high-speed charge-coupled device.A three-dimensional finite element numerical model base...The process of thermal stress damage during 1080 nm laser ablation of single-crystal germanium was recorded in real time using a high-speed charge-coupled device.A three-dimensional finite element numerical model based on Fourier's heat conduction equation,Hooke's law and the Alexander–Hasson equation was developed to analyze the thermal stress damage mechanism involved.The damage morphology of the ablated samples was observed using an optical microscope.The results show that the cooling process has an important influence on fracture in the laser-irradiated region of single-crystal germanium.Fracture is the result of a combination of thermal stress and reduction in local yield strength.展开更多
The single event effect(SEE) sensitivity of silicon–germanium heterojunction bipolar transistor(Si Ge HBT) irradiated by 100-Me V proton is investigated. The simulation results indicate that the most sensitive positi...The single event effect(SEE) sensitivity of silicon–germanium heterojunction bipolar transistor(Si Ge HBT) irradiated by 100-Me V proton is investigated. The simulation results indicate that the most sensitive position of the Si Ge HBT device is the emitter center, where the protons pass through the larger collector-substrate(CS) junction. Furthermore, in this work the experimental studies are also carried out by using 100-Me V proton. In order to consider the influence of temperature on SEE, both simulation and experiment are conducted at a temperature of 93 K. At a cryogenic temperature, the carrier mobility increases, which leads to higher transient current peaks, but the duration of the current decreases significantly.Notably, at the same proton flux, there is only one single event transient(SET) that occurs at 93 K. Thus, the radiation hard ability of the device increases at cryogenic temperatures. The simulation results are found to be qualitatively consistent with the experimental results of 100-Me V protons. To further evaluate the tolerance of the device, the influence of proton on Si Ge HBT after gamma-ray(^(60)Coγ) irradiation is investigated. As a result, as the cumulative dose increases, the introduction of traps results in a significant reduction in both the peak value and duration of the transient currents.展开更多
基金This work was supported by the National Key R&D Program of China(Nos.2022YFF0709503,2022YFB1902700,2017YFC0602101)the Key Research and Development Program of Sichuan province(No.2023YFG0347)the Key Research and Development Program of Sichuan province(No.2020ZDZX0007).
文摘To detect radioactive substances with low activity levels,an anticoincidence detector and a high-purity germanium(HPGe)detector are typically used simultaneously to suppress Compton scattering background,thereby resulting in an extremely low detection limit and improving the measurement accuracy.However,the complex and expensive hardware required does not facilitate the application or promotion of this method.Thus,a method is proposed in this study to discriminate the digital waveform of pulse signals output using an HPGe detector,whereby Compton scattering background is suppressed and a low minimum detectable activity(MDA)is achieved without using an expensive and complex anticoincidence detector and device.The electric-field-strength and energy-deposition distributions of the detector are simulated to determine the relationship between pulse shape and energy-deposition location,as well as the characteristics of energy-deposition distributions for fulland partial-energy deposition events.This relationship is used to develop a pulse-shape-discrimination algorithm based on an artificial neural network for pulse-feature identification.To accurately determine the relationship between the deposited energy of gamma(γ)rays in the detector and the deposition location,we extract four shape parameters from the pulse signals output by the detector.Machine learning is used to input the four shape parameters into the detector.Subsequently,the pulse signals are identified and classified to discriminate between partial-and full-energy deposition events.Some partial-energy deposition events are removed to suppress Compton scattering.The proposed method effectively decreases the MDA of an HPGeγ-energy dispersive spectrometer.Test results show that the Compton suppression factors for energy spectra obtained from measurements on ^(152)Eu,^(137)Cs,and ^(60)Co radioactive sources are 1.13(344 keV),1.11(662 keV),and 1.08(1332 keV),respectively,and that the corresponding MDAs are 1.4%,5.3%,and 21.6%lower,respectively.
基金supported by the National Key Research and Development Program of China(2020YFB2206103)National Natural Science Foundation of China(61975196)Youth Innovation Promotion Association Chinese Academy of Sciences(2021111)。
文摘High-performance germanium(Ge)waveguide photodetectors are designed and fabricated utilizing the inductivegain-peaking technique.With the appropriate integrated inductors,the 3-dB bandwidth of photodetectors is significantly improved owing to the inductive-gain-peaking effect without any compromises to the dark current and optical responsivity.Measured 3-dB bandwidth up to 75 GHz is realized and clear open eye diagrams at 64 Gbps are observed.In this work,the relationship between the frequency response and large signal transmission characteristics on the integrated inductors of Ge waveguide photodetectors is investigated,which indicates the high-speed performance of photodetectors using the inductive-gainpeaking technique.
文摘The process of thermal stress damage during 1080 nm laser ablation of single-crystal germanium was recorded in real time using a high-speed charge-coupled device.A three-dimensional finite element numerical model based on Fourier's heat conduction equation,Hooke's law and the Alexander–Hasson equation was developed to analyze the thermal stress damage mechanism involved.The damage morphology of the ablated samples was observed using an optical microscope.The results show that the cooling process has an important influence on fracture in the laser-irradiated region of single-crystal germanium.Fracture is the result of a combination of thermal stress and reduction in local yield strength.
基金Project supported by the National Natural Science Foundation of China (Grant Nos.61574171,61704127,11875229,51872251,and 12027813)。
文摘The single event effect(SEE) sensitivity of silicon–germanium heterojunction bipolar transistor(Si Ge HBT) irradiated by 100-Me V proton is investigated. The simulation results indicate that the most sensitive position of the Si Ge HBT device is the emitter center, where the protons pass through the larger collector-substrate(CS) junction. Furthermore, in this work the experimental studies are also carried out by using 100-Me V proton. In order to consider the influence of temperature on SEE, both simulation and experiment are conducted at a temperature of 93 K. At a cryogenic temperature, the carrier mobility increases, which leads to higher transient current peaks, but the duration of the current decreases significantly.Notably, at the same proton flux, there is only one single event transient(SET) that occurs at 93 K. Thus, the radiation hard ability of the device increases at cryogenic temperatures. The simulation results are found to be qualitatively consistent with the experimental results of 100-Me V protons. To further evaluate the tolerance of the device, the influence of proton on Si Ge HBT after gamma-ray(^(60)Coγ) irradiation is investigated. As a result, as the cumulative dose increases, the introduction of traps results in a significant reduction in both the peak value and duration of the transient currents.
