We prepared germanium-on-insulator（GOI） substrates by using Smart-CutTM and wafer bonding technology. The fabricated GOI is appropriate for polishing due to a strong bonding strength（2.4 MPa） and a sufficient bond...We prepared germanium-on-insulator（GOI） substrates by using Smart-CutTM and wafer bonding technology. The fabricated GOI is appropriate for polishing due to a strong bonding strength（2.4 MPa） and a sufficient bonding quality.We investigated mechanical polishing and chemical-mechanical polishing（CMP） systematically, and an appropriate polishing method—mechanical polishing combined with CMP-is obtained.As shown by AFM measurement,the RMS of GOI after polishing decreased to 0.543 nm.And the Ge peak profile of the XRD curve became symmetric,and the FWHM is about 121.7 arcsec,demonstrating a good crystal quality.展开更多
基金supported by the Key Program of the National Natural Science Foundation of China(Nos.61176050,61036003,61176092, 60837001the Fundamental Research Funds for Fujian Province of China(No.2012H0038)+1 种基金the National Basic Research Program of China (Nos.2012CB933503,2013CB632103)the Fundamental Research Funds for the Central Universities,China(No.2010121056)
文摘We prepared germanium-on-insulator（GOI） substrates by using Smart-CutTM and wafer bonding technology. The fabricated GOI is appropriate for polishing due to a strong bonding strength（2.4 MPa） and a sufficient bonding quality.We investigated mechanical polishing and chemical-mechanical polishing（CMP） systematically, and an appropriate polishing method—mechanical polishing combined with CMP-is obtained.As shown by AFM measurement,the RMS of GOI after polishing decreased to 0.543 nm.And the Ge peak profile of the XRD curve became symmetric,and the FWHM is about 121.7 arcsec,demonstrating a good crystal quality.
