As indispensable components of superconducting circuit-based quantum computers,Josephson junctions determine how well superconducting qubits perform.Reverse Monte Carlo(RMC)can be used to recreate Josephson junction’...As indispensable components of superconducting circuit-based quantum computers,Josephson junctions determine how well superconducting qubits perform.Reverse Monte Carlo(RMC)can be used to recreate Josephson junction’s atomic structure based on experimental data,and the impact of the structure on junctions’properties can be investigated by combining different analysis techniques.In order to build a physical model of the atomic structure and then analyze the factors that affect its performance,this paper briefly reviews the development and evolution of the RMC algorithm.It also summarizes the modeling process and structural feature analysis of the Josephson junction in combination with different feature extraction techniques for electrical characterization devices.Additionally,the obstacles and potential directions of Josephson junction modeling,which serves as the theoretical foundation for the production of superconducting quantum devices at the atomic level,are discussed.展开更多
Photodetectors based on two-dimensional(2D) materials have attracted considerable attention because of their unique properties. To further improve the performance of self-driven photodetectors based on van der Waals h...Photodetectors based on two-dimensional(2D) materials have attracted considerable attention because of their unique properties. To further improve the performance of self-driven photodetectors based on van der Waals heterojunctions, a conductive band minimum(CBM) matched self-driven SnS_(2)/WS_(2) van der Waals heterojunction photodetector based on a SiO2/Si substrate has been designed. The device exhibits a positive current at zero voltage under 365 nm laser illumination.This is attributed to the built-in electric field at the interface of the SnS_(2) and WS_(2) layer, which will separate and transport the photogenerated carriers, even at zero bias voltage. In addition, the Al_(2)O_(3) layer is covered by the surface of the SnS_(2)/WS_(2) photodetector to further improve the performance, because the Al_(2)O_(3) layer will introduce tensile stress on the surface of the 2D materials leading to a higher electron concentration and smaller effective mass of electrons in the films. This work provides an idea for the research of self-driven photodetectors based on a van der Waals heterogeneous junction.展开更多
A new tunnel recombination junction is fabricated for n-i-p type micromorph tandem solar cells. We insert a thin heavily doped hydrogenated amorphous silicon （a-Si：H） p^＋ recombination layer between the n a-Si：H ...A new tunnel recombination junction is fabricated for n-i-p type micromorph tandem solar cells. We insert a thin heavily doped hydrogenated amorphous silicon （a-Si：H） p^＋ recombination layer between the n a-Si：H and the p hydrogenated nanocrystalline silicon （nc-Si：H） layers to improve the performance of the n-i-p tandem solar cells. The effects of the boron doping gas ratio and the deposition time of the p-a-Si：H recombination layer on the tunnel recombination junctions have been investigated. The current-voltage characteristic of the tunnel recombination junction shows a nearly ohmic characteristic, and the resistance of the tunnel recombination junction can be as low as 1.5 Ω-cm^2 by using the optimized p-a-Si：H recombination layer. We obtain tandem solar cells with open circuit voltage Voc = 1.4 V, which is nearly the sum of the Vocs of the two corresponding single cells, indicating no Voc losses at the tunnel recombination junction.展开更多
A new super-junction lateral double diffused MOSFET （LDMOST） structure is designed with n-type charge compensation layer embedded in the p^--substrate near the drain to suppress substrate-assisted depletion effect t...A new super-junction lateral double diffused MOSFET （LDMOST） structure is designed with n-type charge compensation layer embedded in the p^--substrate near the drain to suppress substrate-assisted depletion effect that results from the compensating charges imbalance between the pillars in the n-type buried layer. A high electric field peak is introduced in the surface by the pn junction between the p^--substrate and n-type buried layer, which given rise to a more uniform surface electric field distribution by modulation effect. The effect of reduced bulk field （REBULF） is introduced to improve the vertical breakdown voltage by reducing the high bulk electric field around the drain, The new structure features high breakdown voltage, low on-resistance and charges balance in the drift region due to n-type buried layer.展开更多
A novel lateral double-diffused metal–oxide semiconductor（LDMOS） with a high breakdown voltage（BV） and low specific on-resistance（Ron.sp） is proposed and investigated by simulation. It features a junction field...A novel lateral double-diffused metal–oxide semiconductor（LDMOS） with a high breakdown voltage（BV） and low specific on-resistance（Ron.sp） is proposed and investigated by simulation. It features a junction field plate（JFP） over the drift region and a partial N-buried layer（PNB） in the P-substrate. The JFP not only smoothes the surface electric field（E-field）, but also brings in charge compensation between the JFP and the N-drift region, which increases the doping concentration of the N-drift region. The PNB reshapes the equipotential contours, and thus reduces the E-field peak on the drain side and increases that on the source side. Moreover, the PNB extends the depletion width in the substrate by introducing an additional vertical diode, resulting in a significant improvement on the vertical BV. Compared with the conventional LDMOS with the same dimensional parameters, the novel LDMOS has an increase in BV value by 67.4%,and a reduction in Ron.sp by 45.7% simultaneously.展开更多
To study the influence of CoFeB/MgO interface on tunneling magnetoresistance （TMR）, different structures of magnetic tunnel junctions （MTJs） are successfully prepared by the magnetron sputtering technique and char...To study the influence of CoFeB/MgO interface on tunneling magnetoresistance （TMR）, different structures of magnetic tunnel junctions （MTJs） are successfully prepared by the magnetron sputtering technique and characterized by atomic force microscopy, a physical property measurement system, x-ray photoelectron spectroscopy, and transmission electron microscopy. The experimental results show that TMR of the CoFeB/Mg/MgO/CoFeB structure is evidently improved in comparison with the CoFeB/MgO/CoFeB structure because the inserted Mg layer prevents Fe-oxide formation at the CoFeB/MgO interface, which occurs in CoFeB/MgO/CoFeB MTJs. The inherent properties of the CoFeB/MgO/CoFeB, CoFeB/Fe-oxide/MgO/CoFeB and CoFeB/Mg/MgO/CoFeB MTJs are simulated by using the theories of density functions and non-equilibrium Green functions. The simulated results demonstrate that TMR of CoFeB/Fe-oxide/MgO/CoFeB MTJs is severely decreased and is only half the value of the CoFeB/Mg/MgO/CoFeB MTJs. Based on the experimental results and theoretical analysis, it is believed that in CoFeB/MgO/CoFeB MTJs, the interface oxidation of the CoFeB layer is the main reason to cause a remarkable reduction of TMR, and the inserted Mg layer may play an important role in protecting Fe atoms from oxidation, and then increasing TMR.展开更多
In copper oxide (CuO) based solar cells, various buffer layers such as CdS, In<sub>2</sub>S<sub>3</sub>, WS<sub>2</sub> and IGZO have been investigated by solar cell capacitance sim...In copper oxide (CuO) based solar cells, various buffer layers such as CdS, In<sub>2</sub>S<sub>3</sub>, WS<sub>2</sub> and IGZO have been investigated by solar cell capacitance simulator (SCAPS) in this work. By varying absorber and buffer layer thickness, photovoltaic parameters (open circuit voltage, fill factor, short-circuit current density and efficiency) are determined. The highest efficiency achieved is 19.6% with WS<sub>2</sub> buffer layer. The impact of temperature on all CuO-based solar cells is also investigated.展开更多
This paper reports that a double N layer （a-Si：H/μc-Si：H） is used to substitute the single microcrystalline silicon n layer （n-μc-Si：H） in n/p tunnel recombination junction between subcells in a-Si：H/μc-Si...This paper reports that a double N layer （a-Si：H/μc-Si：H） is used to substitute the single microcrystalline silicon n layer （n-μc-Si：H） in n/p tunnel recombination junction between subcells in a-Si：H/μc-Si：H tandem solar cells. The electrical transport and optical properties of these tunnel recombination junctions are investigated by current voltage measurement and transmission measurement. The new n/p tunnel recombination junction shows a better ohmic contact. In addition, the n/p interface is exposed to the air to examine the effect of oxidation on the tunnel recombination junction performance. The open circuit voltage and FF of a-Si：H/μc-Si：H tandem solar cell are all improved and the current leakage of the subcells can be effectively prevented efficiently when the new n/p junction is implemented as tunnel recombination junction.展开更多
A new ultra-low specific on-resistance （Ron,sp） vertical double diffusion metal-oxide-semiconductor field-effect tran- sistor （VDMOS） with continuous electron accumulation （CEA） layer, denoted as CEA-VDMOS, is p...A new ultra-low specific on-resistance （Ron,sp） vertical double diffusion metal-oxide-semiconductor field-effect tran- sistor （VDMOS） with continuous electron accumulation （CEA） layer, denoted as CEA-VDMOS, is proposed and its new current transport mechanism is investigated. It features a trench gate directly extended to the drain, which includes two PN junctions. In on-state, the electron accumulation layers are formed along the sides of the extended gate and introduce two continuous low-resistance current paths from the source to the drain in a cell pitch. This mechanism not only dramatically reduces the Ron,sp but also makes the Ron,sp almost independent of the n-pillar doping concentration （Am）. In off-state, the depletion between the n-pillar and p-pillar within the extended trench gate increases the Nn, and further reduces the Ron,sp. Especially, the two PNjunctions within the trench gate support a high gate--drain voltage in the off-state and on-state, re- spectively. However, the extended gate increases the gate capacitance and thus weakens the dynamic performance to some extent. Therefore, the CEA-VDMOS is more suitable for low and medium frequencies application. Simulation indicates that the CEA-VDMOS reduces the Ron,sp by 80% compared with the conventional super-junction VDMOS （CSJ-VDMOS） at the same high breakdown voltage （BV）.展开更多
Years of research have demonstrated that the use of multiple components is essential to the development of a commercial photoelectrode to address specific bottlenecks,such as low charge separation and injection effici...Years of research have demonstrated that the use of multiple components is essential to the development of a commercial photoelectrode to address specific bottlenecks,such as low charge separation and injection efficiency,low carrier diffusion length and lifetime,and poor durability.A facile strategy for the synthesis of multilayered photoanodes from atomic-layer-deposited ultrathin films has enabled a new type of electrode architecture with a total multilayer thickness of 15–17 nm.We illustrate the advantages of this electrode architecture by using nanolayers to address different bottlenecks,thus producing a multilayer photoelectrode with improved interface kinetics and shorter electron transport path,as determined by interface analyses.The photocurrent density was twice that of the bare structure and reached a maximum of 33.3±2.1 mA cm^(−2) at 1.23 VRHE.An integrated overall water-splitting cell consisting of an electrocatalytic NiS cathode and Bi_(2)S_(3)/NiS/NiFeO/TiO_(2) photoanode was used for precious-metal-free seawater splitting at a cell voltage of 1.23 V without degradation.The results and root analyses suggest that the distinctive advantages of the electrode architecture,which are superior to those of bulk bottom-up core–shell and hierarchical architectures,originate from the high density of active sites and nanometer-scale layer thickness,which enhance the suitability for interface-oriented energy conversion processes.展开更多
In this paper, a new structure of a 4H-SiC bipolar junction transistor （BJT） with a buried layer （BL） in the base is presented. The current gain shows an approximately 100% increase compared with that of the conve...In this paper, a new structure of a 4H-SiC bipolar junction transistor （BJT） with a buried layer （BL） in the base is presented. The current gain shows an approximately 100% increase compared with that of the conventional structure. This is attributed to the creation of a built-in electric field for the minority carriers to transport in the base which is explained based on 2D device simulations. The optimized design of the buried layer region is also considered by numeric simulations.展开更多
Owing to the function of manipulating light absorption distribution,tandem organic solar cells containing multiple sub-cells exhibit high power conversion efficiencies.However,there is a substantial challenge in preci...Owing to the function of manipulating light absorption distribution,tandem organic solar cells containing multiple sub-cells exhibit high power conversion efficiencies.However,there is a substantial challenge in precisely controlling the inter-subcells carrier migration which determines the balance of charge transport across the entire device.The conductivity of"nanowires"-like conducting channel in interconnecting layer between sub-cells should be improved which calls for fine engineering on the morphology of polyelectrolyte in interconnecting layer.Here,we develop a simple method to effectively manipulating the domains of conductive components in commercially available polyelectrolyte PEDOT:PSs.The use of poor solvent could effectively modify the configuration of polystyrene sulfonic acid and thus the space for conductive components.Based on our strategy,the insulated shells wrapping conductive domains are thinned and the efficiencies of tandem organic solar cells are improved.We believe our method might provide guidance for the manufacture of tandem organic solar cells.展开更多
基金This paper is supported by the Major Science and Technology Projects of Henan Province under Grant No.221100210400.
文摘As indispensable components of superconducting circuit-based quantum computers,Josephson junctions determine how well superconducting qubits perform.Reverse Monte Carlo(RMC)can be used to recreate Josephson junction’s atomic structure based on experimental data,and the impact of the structure on junctions’properties can be investigated by combining different analysis techniques.In order to build a physical model of the atomic structure and then analyze the factors that affect its performance,this paper briefly reviews the development and evolution of the RMC algorithm.It also summarizes the modeling process and structural feature analysis of the Josephson junction in combination with different feature extraction techniques for electrical characterization devices.Additionally,the obstacles and potential directions of Josephson junction modeling,which serves as the theoretical foundation for the production of superconducting quantum devices at the atomic level,are discussed.
基金Project supported by the National Natural Science Foundation of China (Grant Nos.61974144,62004127,and 12074263)the Science and Technology Foundation of Shenzhen (Grant No.JSGG20191129114216474)the “National” Taipei University of Technology–Shenzhen University Joint Research Program,China (Grant No.2020009)。
文摘Photodetectors based on two-dimensional(2D) materials have attracted considerable attention because of their unique properties. To further improve the performance of self-driven photodetectors based on van der Waals heterojunctions, a conductive band minimum(CBM) matched self-driven SnS_(2)/WS_(2) van der Waals heterojunction photodetector based on a SiO2/Si substrate has been designed. The device exhibits a positive current at zero voltage under 365 nm laser illumination.This is attributed to the built-in electric field at the interface of the SnS_(2) and WS_(2) layer, which will separate and transport the photogenerated carriers, even at zero bias voltage. In addition, the Al_(2)O_(3) layer is covered by the surface of the SnS_(2)/WS_(2) photodetector to further improve the performance, because the Al_(2)O_(3) layer will introduce tensile stress on the surface of the 2D materials leading to a higher electron concentration and smaller effective mass of electrons in the films. This work provides an idea for the research of self-driven photodetectors based on a van der Waals heterogeneous junction.
基金Project supported by the National Basic Research Program of China (Grant No. 2006CB202604)the Knowledge Innovation Program of Chinese Academy of Sciences (Grant No. 1KGCX2-YW-383-1)the National High Technology Research and Development Program of China (Grant No. SQ2010AA0521758001)
文摘A new tunnel recombination junction is fabricated for n-i-p type micromorph tandem solar cells. We insert a thin heavily doped hydrogenated amorphous silicon （a-Si：H） p^＋ recombination layer between the n a-Si：H and the p hydrogenated nanocrystalline silicon （nc-Si：H） layers to improve the performance of the n-i-p tandem solar cells. The effects of the boron doping gas ratio and the deposition time of the p-a-Si：H recombination layer on the tunnel recombination junctions have been investigated. The current-voltage characteristic of the tunnel recombination junction shows a nearly ohmic characteristic, and the resistance of the tunnel recombination junction can be as low as 1.5 Ω-cm^2 by using the optimized p-a-Si：H recombination layer. We obtain tandem solar cells with open circuit voltage Voc = 1.4 V, which is nearly the sum of the Vocs of the two corresponding single cells, indicating no Voc losses at the tunnel recombination junction.
基金Project supported by the National Natural Science Foundation of China （Grant No 60436030） and the Key Laboratory for Defence Science and Technology on Military Simulation Integrated Circuits （Grant No 9140C0903010604）.
文摘A new super-junction lateral double diffused MOSFET （LDMOST） structure is designed with n-type charge compensation layer embedded in the p^--substrate near the drain to suppress substrate-assisted depletion effect that results from the compensating charges imbalance between the pillars in the n-type buried layer. A high electric field peak is introduced in the surface by the pn junction between the p^--substrate and n-type buried layer, which given rise to a more uniform surface electric field distribution by modulation effect. The effect of reduced bulk field （REBULF） is introduced to improve the vertical breakdown voltage by reducing the high bulk electric field around the drain, The new structure features high breakdown voltage, low on-resistance and charges balance in the drift region due to n-type buried layer.
基金Project supported by the National Natural Science Foundation of China(Grant No.61376079)the Program for New Century Excellent Talents in University of Ministry of Education of China(Grant No.NCET-11-0062)the Postdoctoral Science Foundation of China(Grant Nos.2012T50771 and XM2012004)
文摘A novel lateral double-diffused metal–oxide semiconductor（LDMOS） with a high breakdown voltage（BV） and low specific on-resistance（Ron.sp） is proposed and investigated by simulation. It features a junction field plate（JFP） over the drift region and a partial N-buried layer（PNB） in the P-substrate. The JFP not only smoothes the surface electric field（E-field）, but also brings in charge compensation between the JFP and the N-drift region, which increases the doping concentration of the N-drift region. The PNB reshapes the equipotential contours, and thus reduces the E-field peak on the drain side and increases that on the source side. Moreover, the PNB extends the depletion width in the substrate by introducing an additional vertical diode, resulting in a significant improvement on the vertical BV. Compared with the conventional LDMOS with the same dimensional parameters, the novel LDMOS has an increase in BV value by 67.4%,and a reduction in Ron.sp by 45.7% simultaneously.
基金Supported by the National Defense Advance Research Foundation under Grant No 9140A08XXXXXX0DZ106the Basic Research Program of Ministry of Education of China under Grant No JY10000925005+2 种基金the Scientific Research Program Funded by Shaanxi Provincial Education Department under Grant No 11JK0912the Scientific Research Foundation of Xi'an University of Science and Technology under Grant No 2010011the Doctoral Research Startup Fund of Xi'an University of Science and Technology under Grant No 2010QDJ029
文摘To study the influence of CoFeB/MgO interface on tunneling magnetoresistance （TMR）, different structures of magnetic tunnel junctions （MTJs） are successfully prepared by the magnetron sputtering technique and characterized by atomic force microscopy, a physical property measurement system, x-ray photoelectron spectroscopy, and transmission electron microscopy. The experimental results show that TMR of the CoFeB/Mg/MgO/CoFeB structure is evidently improved in comparison with the CoFeB/MgO/CoFeB structure because the inserted Mg layer prevents Fe-oxide formation at the CoFeB/MgO interface, which occurs in CoFeB/MgO/CoFeB MTJs. The inherent properties of the CoFeB/MgO/CoFeB, CoFeB/Fe-oxide/MgO/CoFeB and CoFeB/Mg/MgO/CoFeB MTJs are simulated by using the theories of density functions and non-equilibrium Green functions. The simulated results demonstrate that TMR of CoFeB/Fe-oxide/MgO/CoFeB MTJs is severely decreased and is only half the value of the CoFeB/Mg/MgO/CoFeB MTJs. Based on the experimental results and theoretical analysis, it is believed that in CoFeB/MgO/CoFeB MTJs, the interface oxidation of the CoFeB layer is the main reason to cause a remarkable reduction of TMR, and the inserted Mg layer may play an important role in protecting Fe atoms from oxidation, and then increasing TMR.
文摘In copper oxide (CuO) based solar cells, various buffer layers such as CdS, In<sub>2</sub>S<sub>3</sub>, WS<sub>2</sub> and IGZO have been investigated by solar cell capacitance simulator (SCAPS) in this work. By varying absorber and buffer layer thickness, photovoltaic parameters (open circuit voltage, fill factor, short-circuit current density and efficiency) are determined. The highest efficiency achieved is 19.6% with WS<sub>2</sub> buffer layer. The impact of temperature on all CuO-based solar cells is also investigated.
基金Project supported by the State Key Development Program for Basic Research of China (Grant Nos 2006CB202602 and2006CB202603)the National Natural Science Foundation of China (Grant No 60506003)
文摘This paper reports that a double N layer （a-Si：H/μc-Si：H） is used to substitute the single microcrystalline silicon n layer （n-μc-Si：H） in n/p tunnel recombination junction between subcells in a-Si：H/μc-Si：H tandem solar cells. The electrical transport and optical properties of these tunnel recombination junctions are investigated by current voltage measurement and transmission measurement. The new n/p tunnel recombination junction shows a better ohmic contact. In addition, the n/p interface is exposed to the air to examine the effect of oxidation on the tunnel recombination junction performance. The open circuit voltage and FF of a-Si：H/μc-Si：H tandem solar cell are all improved and the current leakage of the subcells can be effectively prevented efficiently when the new n/p junction is implemented as tunnel recombination junction.
基金supported by the National Natural Science Foundation of China(Grant Nos.61176069 and 61376079)the Fundamental Research Funds for the Central Universities,China(Grant No.ZYGX2014Z006)
文摘A new ultra-low specific on-resistance （Ron,sp） vertical double diffusion metal-oxide-semiconductor field-effect tran- sistor （VDMOS） with continuous electron accumulation （CEA） layer, denoted as CEA-VDMOS, is proposed and its new current transport mechanism is investigated. It features a trench gate directly extended to the drain, which includes two PN junctions. In on-state, the electron accumulation layers are formed along the sides of the extended gate and introduce two continuous low-resistance current paths from the source to the drain in a cell pitch. This mechanism not only dramatically reduces the Ron,sp but also makes the Ron,sp almost independent of the n-pillar doping concentration （Am）. In off-state, the depletion between the n-pillar and p-pillar within the extended trench gate increases the Nn, and further reduces the Ron,sp. Especially, the two PNjunctions within the trench gate support a high gate--drain voltage in the off-state and on-state, re- spectively. However, the extended gate increases the gate capacitance and thus weakens the dynamic performance to some extent. Therefore, the CEA-VDMOS is more suitable for low and medium frequencies application. Simulation indicates that the CEA-VDMOS reduces the Ron,sp by 80% compared with the conventional super-junction VDMOS （CSJ-VDMOS） at the same high breakdown voltage （BV）.
基金We are grateful to Prof.Hong H.Lee for the valuable and in-depth conversations related to this study.This study was financially supported by the National Research Foundation of Korea(2021R1A2C1012735)Open access funding provided by Shanghai Jiao Tong University
文摘Years of research have demonstrated that the use of multiple components is essential to the development of a commercial photoelectrode to address specific bottlenecks,such as low charge separation and injection efficiency,low carrier diffusion length and lifetime,and poor durability.A facile strategy for the synthesis of multilayered photoanodes from atomic-layer-deposited ultrathin films has enabled a new type of electrode architecture with a total multilayer thickness of 15–17 nm.We illustrate the advantages of this electrode architecture by using nanolayers to address different bottlenecks,thus producing a multilayer photoelectrode with improved interface kinetics and shorter electron transport path,as determined by interface analyses.The photocurrent density was twice that of the bare structure and reached a maximum of 33.3±2.1 mA cm^(−2) at 1.23 VRHE.An integrated overall water-splitting cell consisting of an electrocatalytic NiS cathode and Bi_(2)S_(3)/NiS/NiFeO/TiO_(2) photoanode was used for precious-metal-free seawater splitting at a cell voltage of 1.23 V without degradation.The results and root analyses suggest that the distinctive advantages of the electrode architecture,which are superior to those of bulk bottom-up core–shell and hierarchical architectures,originate from the high density of active sites and nanometer-scale layer thickness,which enhance the suitability for interface-oriented energy conversion processes.
文摘In this paper, a new structure of a 4H-SiC bipolar junction transistor （BJT） with a buried layer （BL） in the base is presented. The current gain shows an approximately 100% increase compared with that of the conventional structure. This is attributed to the creation of a built-in electric field for the minority carriers to transport in the base which is explained based on 2D device simulations. The optimized design of the buried layer region is also considered by numeric simulations.
基金the National Natural Science Foundation of China(NSFC)(22275016,21835006,22122905)Beijing Municipal Science&Technology Commission(2232078)+2 种基金Beijing National Laboratory for Molecular Sciences(BNLMS)Junior Fellow(2019BMS20014,BNLMS-CXXM-201903)National Research Council of Science and Technology of Korea(Global20-004)the Key Research Program of the Chinese Academy of Sciences(XDPB13-3).
文摘Owing to the function of manipulating light absorption distribution,tandem organic solar cells containing multiple sub-cells exhibit high power conversion efficiencies.However,there is a substantial challenge in precisely controlling the inter-subcells carrier migration which determines the balance of charge transport across the entire device.The conductivity of"nanowires"-like conducting channel in interconnecting layer between sub-cells should be improved which calls for fine engineering on the morphology of polyelectrolyte in interconnecting layer.Here,we develop a simple method to effectively manipulating the domains of conductive components in commercially available polyelectrolyte PEDOT:PSs.The use of poor solvent could effectively modify the configuration of polystyrene sulfonic acid and thus the space for conductive components.Based on our strategy,the insulated shells wrapping conductive domains are thinned and the efficiencies of tandem organic solar cells are improved.We believe our method might provide guidance for the manufacture of tandem organic solar cells.
