Amorphous La0.7Zn0.3MnO3（LZMO） films were deposited on p＋-Si substrates by sol-gel method at low temperature of 450 ℃.The Ag/LZMO/p＋-Si device exhibits invertible bipolar resistive switching and the RHRS/RLRS was...Amorphous La0.7Zn0.3MnO3（LZMO） films were deposited on p＋-Si substrates by sol-gel method at low temperature of 450 ℃.The Ag/LZMO/p＋-Si device exhibits invertible bipolar resistive switching and the RHRS/RLRS was about 104-106 at room temperature which can be kept over 103 switching cycles.Better endurance characteristics were observed in the Ag/LZMO/p＋-Si device,the VSet and the VReset almost remained after 103 endurance switching cycles.According to electrical analyses,the conductor mechanism was in low resistor state（LRS） governed by the filament conductor and in the high state（HRS） dominated by the trapscontrolled space-charge-limited current（SCLC） conductor.展开更多
基金Funded by the National Natural Science Foundation of China(No.51262003)the Guangxi Key Laboratory of Information Materials(Guilin University of Electronic Technology),China(No.1110908-10-Z)
文摘Amorphous La0.7Zn0.3MnO3（LZMO） films were deposited on p＋-Si substrates by sol-gel method at low temperature of 450 ℃.The Ag/LZMO/p＋-Si device exhibits invertible bipolar resistive switching and the RHRS/RLRS was about 104-106 at room temperature which can be kept over 103 switching cycles.Better endurance characteristics were observed in the Ag/LZMO/p＋-Si device,the VSet and the VReset almost remained after 103 endurance switching cycles.According to electrical analyses,the conductor mechanism was in low resistor state（LRS） governed by the filament conductor and in the high state（HRS） dominated by the trapscontrolled space-charge-limited current（SCLC） conductor.
