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Phase separations in graded-indium content InGaN/GaN multiple quantum wells and its function to high quantum efficiency
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作者 郭洪英 孙元平 +4 位作者 Yong-Hoon Cho Eun-Kyung Suh Hai-Joon Lee Rak-Jun Choi Yoon-Bong Hahn 《Journal of Semiconductors》 EI CAS CSCD 2012年第5期13-16,共4页
Phase separations have been studied for graded-indium content In_xGa_(1-x)N/GaN multiple quantum wells(MQWs) with different indium contents by means of photoluminescence(PL),cathodeluminescence(CL) and time-re... Phase separations have been studied for graded-indium content In_xGa_(1-x)N/GaN multiple quantum wells(MQWs) with different indium contents by means of photoluminescence(PL),cathodeluminescence(CL) and time-resolved PL(TRPL) techniques.Besides the main emission peaks,all samples show another 2 peaks at the high and low energy parts of the main peaks in PL when excited at 10 K.CL images show a clear contrast for 3 samples,which indicates an increasing phase separation with increasing indium content.TRPL spectra at 15 K of the main emissions show an increasing delay of rising time with indium content,which means a carrier transferring from low indium content structures to high indium content structures. 展开更多
关键词 carrier transfer phase separation graded-indium content multiple quantum wells
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