Polycrystalline silicon thin films were prepared by RTCVD (rapid thermal chemica l vapor deposition) method on several substrates such as SSP (silicon sheet from powder) ribbon, poly-Si wafer and mono-Si wafer. Intra-...Polycrystalline silicon thin films were prepared by RTCVD (rapid thermal chemica l vapor deposition) method on several substrates such as SSP (silicon sheet from powder) ribbon, poly-Si wafer and mono-Si wafer. Intra-granular defects such as stacking faults, twins and microstructure defects were investigated on thin fil ms by scan electron microscopy (SEM) technique.展开更多
We review the recently discovered tunnel-type giant magnetoresistance (GMR) in ferromagnetic metal-insulator granular thin films, which is the magnetoresistance (MR) associated with the spin-dependent tunneling betwee...We review the recently discovered tunnel-type giant magnetoresistance (GMR) in ferromagnetic metal-insulator granular thin films, which is the magnetoresistance (MR) associated with the spin-dependent tunneling between two ferromagnetic metal particles. The theoretical and experimental results including electrical resistivity, magnetoresistance and their temperature dependence are described. Limitations to the applications of the ferromagnetic metal-insulator granular films are also discussed. Additionally, a brief survey of another two magnetic properties, high- frequency property and giant Hall effect (GHE) associated strongly with the granular structures is also presented.展开更多
基金This work was supported by the Chinese Academy of Sciences within"The Hundred Talent Projecr"(99-019-122288)National High Technical Research and Development Programme of China(No.2001AA513060)+1 种基金the 10th Five-Year Plan of Guangdong Province(A1100501)the National Natural Science Fundation of China(No.50376067).
文摘Polycrystalline silicon thin films were prepared by RTCVD (rapid thermal chemica l vapor deposition) method on several substrates such as SSP (silicon sheet from powder) ribbon, poly-Si wafer and mono-Si wafer. Intra-granular defects such as stacking faults, twins and microstructure defects were investigated on thin fil ms by scan electron microscopy (SEM) technique.
基金the National NaturalScience Foundation of China (Grant No. 59801006) the Key Teacher Supporting Project (Grant No. G00032) +1 种基金and the Starting Foundation of Returned Researchers of the National Education Committee and Tianjin Youth Science Foundatio
文摘We review the recently discovered tunnel-type giant magnetoresistance (GMR) in ferromagnetic metal-insulator granular thin films, which is the magnetoresistance (MR) associated with the spin-dependent tunneling between two ferromagnetic metal particles. The theoretical and experimental results including electrical resistivity, magnetoresistance and their temperature dependence are described. Limitations to the applications of the ferromagnetic metal-insulator granular films are also discussed. Additionally, a brief survey of another two magnetic properties, high- frequency property and giant Hall effect (GHE) associated strongly with the granular structures is also presented.
