With the help of ab initio full-potential linearized augmented plane wave （FPLAPW） method, calculating the electronic structure and linear optical properties is carried out for XCd2（SO4）3 （X =Tl, Rb）. The result...With the help of ab initio full-potential linearized augmented plane wave （FPLAPW） method, calculating the electronic structure and linear optical properties is carried out for XCd2（SO4）3 （X =Tl, Rb）. The results show that Tl2Cd2（SO4）3 （TlCdS） has a larger band gap than Rb2Cd2（SO4）3 （RbCdS） and the energy bands for RbCdS are more dispersive than those of TlCdS. From their partial densities of states （PDOS）, we have observed that the hybridization between S ionic 2p and O atomic 2p orbitals forms SO4 ionic groups. The remarkable difference between RbCdS and TlCdS is, however, the degree of hybridization between cation （Tl and Rb） and its surrounding oxygen atoms. In the view of quantum chemistry, the strong p-d hybridization indicates the existence of their cation ionic bonds （Cd-O, Rb-O, and Tl-O）. The calculations of TlCdS and RbCdS show their optical properties to be less anisotropic. Their anisotropies in the optical properties mainly occur in a low photon energy region of 5-16 eV.展开更多
With the help of the ab initio full-potential linearized augmented plane wave （FPLAPW） method, calculations of the electronic structure and linear optical properties are carried out for red HgI2 and yellow HgI2. It ...With the help of the ab initio full-potential linearized augmented plane wave （FPLAPW） method, calculations of the electronic structure and linear optical properties are carried out for red HgI2 and yellow HgI2. It is found that the red HgI2 has a direct gap of 1.22834 eV and the yellow HgI2 has an indirect gap of 2.11222 eV. For the red HgI2, the calculated optical spectra are qualitatively in agreement with the experimental data. Furthermore, the origins of the different peaks of ε2（ω） are discussed. Our calculated anisotropic dielectric function of the red HgI2 is a nice match with the experimental results. Our calculated results are able to reproduce the overall trend of the experimental reflectivity spectra. Although no comparable experimental and theoretical results are available, clearly, the above proves the reliability of our calculations, suggesting that our calculations should be convincing for the yellow HgI2. Finally, the different optical properties are discussed.展开更多
The structural, energetic, and electronic properties of lattice highly mismatched ZnY1-xOx （Y = S, Se, Te） ternary alloys with dilute O concentrations are calculated from first principles within the density function...The structural, energetic, and electronic properties of lattice highly mismatched ZnY1-xOx （Y = S, Se, Te） ternary alloys with dilute O concentrations are calculated from first principles within the density functional theory. We demonstrate the formation of an isolated intermediate electronic band structure through diluted O-substitute in zinc-blende ZnY （Y = S, Se, Te） at octahedral sites in a semiconductor by the calculations of density of states （DOS）, leading to a significant absorption below the band gap of the parent semiconductor and an enhancement of the optical absorption in the whole energy range of the solar spectrum. It is found that the intermediate band states should be described as a result of the coupling between impurity O 2p states with the conduction band states. Moreover, the intermediate bands （IBs） in ZnTeO show high stabilization with the change of O concentration resulting from the largest electronegativity difference between O and Te compared with in the other ZnSO and ZnSeO.展开更多
The elastic, thermodynamic, electronic, and optical properties of recently discovered and potentially technologically important transition metal boride NbRuB, are investigated using the density functional formalism. B...The elastic, thermodynamic, electronic, and optical properties of recently discovered and potentially technologically important transition metal boride NbRuB, are investigated using the density functional formalism. Both generalized gradient approximation （GGA） and local density approximation （LDA） are used for optimizing the geometry and for estimating various elastic moduli and constants. The optical properties of NbRuB are studied for the first time with different photon polarizations. The frequency （energy） dependence of various optical constants complement quite well the essential features of the electronic band structure calculations. Debye temperature of NbRuB is estimated from the thermodynamical study. All these theoretical estimates are compared with published results, where available, and discussed in detail. Both electronic band structure and optical conductivity reveal robust metallic characteristics. The NbRuB possesses significant elastic anisotropy. Electronic features, on the other hand, are almost isotropic in nature. The effects of electronic band structure and Debye temperature on the emergence of superconductivity are also analyzed.展开更多
Density functional calculations were used to investigate the structural,electronic,optical and thermal properties of Cr_4AlB_6.The optimized lattice constants and atomic positions accord well with the experimental dat...Density functional calculations were used to investigate the structural,electronic,optical and thermal properties of Cr_4AlB_6.The optimized lattice constants and atomic positions accord well with the experimental data.The analysis of band structure and density of states confirms the metallic nature of Cr_4AlB_6.The static dielectric constant e1（0） is about 128.0,and the maximum optical conductivity occurs at about 8.12 eV.In the photon energy range from 7.87 to 23.48 e V,Cr_4AlB_6 presents a metal reflective property.The plasma resonance frequency wp of Cr_4AlB_6 is at the photon energy of 23.85 eV,and Cr_4AlB_6 will be transparent and change from metallic to dielectric response if the incident light has frequency greater than the plasma frequency of Cr_4AlB_6.Thermodynamic properties including the primitive cell volume and thermal expansion,the bulk modulus and heat capacity Cv were further investigated with the increasing temperature and pressure by using the quasi-harmonic Debye model.展开更多
Electronic and optical properties of rock-salt AIN under high pressure are investigated by first-principlesmethod based on the plane-wave basis set.Analysis of band structures suggests that the rock-salt AIN has an in...Electronic and optical properties of rock-salt AIN under high pressure are investigated by first-principlesmethod based on the plane-wave basis set.Analysis of band structures suggests that the rock-salt AIN has an indirectgap of 4.53 eV,which is in good agreement with other results.By investigating the effects of pressure on the energygap,the different movement of conduction band at X point below and above 22.5 GPa is predicted.The opticalproperties including dielectric function,absorption,reflectivity,and refractive index are also calculated and analyzed.Itis found that the rock-salt AIN is transparent from the partially ultra-violet to the visible light area and hardly does thetransparence affected by the pressure.Furthermore,the curve of optical spectrum will shift to high energy area (blueshift) with increasing pressure.展开更多
We present the specific ab-initio calculations that detail the variations of perovskite BaZrO3 caused by in-plane strain. Specifically, the internal relaxation, which was not captured in the widely used biaxial strain...We present the specific ab-initio calculations that detail the variations of perovskite BaZrO3 caused by in-plane strain. Specifically, the internal relaxation, which was not captured in the widely used biaxial strain model, was included in a complementary manner to lattice relaxation. Density functional theory as well as a hybrid functional method based on a plane wave basis set was employed to calculate the lattice structure, elastic constants, electronic properties and optical properties of perovskite BaZrO3. The lattice parameter c exhibited a clear linear dependence on the imposed in-plane strain, but the Poisson＇s ratio caused by internal relaxation was smaller than the elastic deformation, indicating an ＂inelastic＂ or ＂plastic＂ relaxation manner caused by the introduction of internal relaxation. As a result, the related electronic and optical properties of perovskite BaZrO3 were also strongly affected by the in-plane strain, which revealed an effective way to adjust the properties of perovskite BaZrO3 via internal relaxation.展开更多
The electronic and optical properties of graphene monoxide,a new type of semiconductor material,are theoretically studied by first-principles density functional theory.The calculated band structure shows that graphene...The electronic and optical properties of graphene monoxide,a new type of semiconductor material,are theoretically studied by first-principles density functional theory.The calculated band structure shows that graphene monoxide is a semiconductor with a direct band gap of 0.95 eV.The density of states of graphene monoxide and the partial density of states for C and O are given to understand the electronic structure.In addition,we calculate the optical properties of graphene monoxide,including the complex dielectric function,absorption coefficient, complex refractive index,loss-function,reflectivity and conductivity.These results provide a physical basis for potential application in optoelectronic devices.展开更多
We present a system study on the electronic structure and optical property of boron doped semiconducting graphene nanoribbons using the density functional theory. Energy band structure, density of states, deformation ...We present a system study on the electronic structure and optical property of boron doped semiconducting graphene nanoribbons using the density functional theory. Energy band structure, density of states, deformation density, Mulliken popular and optical spectra are considered to show the special electronic structure of boron doped semiconducting graphene nanoribbons. The C-B bond form is discussed in detail. From our analysis it is concluded that the Fermi energy of boron doped semiconducting graphene nanoribbons gets lower than that of intrinsic semiconducting graphene nanoribbons. Our results also show that the boron doped semiconducting graphene nanoribbons behave as p-type semiconducting and that the absorption coefficient of boron doped armchair graphene nanoribbons is generally enhanced between 2.0 eV and 3.3 eV. Therefore, our results have a great significance in developing nano-material for fabricating the nano-photovoltaic devices.展开更多
In this paper,the electronic structure and stability of the intrinsic,B-,N-,Si-,S-doped graphene are studied based on first-principles calculations of density functional theory.Firstly,the intrinsic,B-,N-,Si-,S-doped ...In this paper,the electronic structure and stability of the intrinsic,B-,N-,Si-,S-doped graphene are studied based on first-principles calculations of density functional theory.Firstly,the intrinsic,B-,N-,Si-,S-doped graphene structures are optimized,and then the forming energy,band structure,density of states,differential charge density are analyzed and calculated.The results show that Band Si-doped systems are p-type doping,while N is n-type doping.By comparing the forming energy,it is found that N atoms are more easily doped in graphene.In addition,for B-,N-,Si-doped systems,it is found that the doping atoms will open the band gap,leading to a great change in the band structure of the doping system.Finally,we systematically study the optical properties of the different configurations.By comparison,it is found that the order of light sensitivity in the visible region is as follows:S-doped>Si-doped>pure>B-doped>N-doped.Our results will provide theoretical guidance for the stability and electronic structure of non-metallic doped graphene.展开更多
We have discussed the materials of solar cell based on hybrid organic–inorganic halide perovskites with formamidinium(NH_2CH = NH_2^+or FA) lead iodide. Firstly, we build the structure of formamidinium lead iodide(FA...We have discussed the materials of solar cell based on hybrid organic–inorganic halide perovskites with formamidinium(NH_2CH = NH_2^+or FA) lead iodide. Firstly, we build the structure of formamidinium lead iodide(FAPbI_3) by using the material studio. By using the first-principles calculations, the energy band structure, density of states(DOS), and partial DOS(PDOS) of the hydrazine-iodide lead halide are obtained. Then, we theoretically analyze a design scheme for perovskite solar cell materials, published in [Science 354, 861(2016)], with the photoelectric conversion efficiency that can reach 20.3%. Also, we use non-toxic elements to replace lead in FAPbI_3 without affecting its photoelectric conversion efficiency. Here in this work, we explore the energy band structure, lattice constant, light absorption efficiency, etc. After the Ca, Zn, Ge Sr, Sn, and Ta atoms replacing lead(Pb) and through comparing the spectral distributions of the solar spectrum, it can be found that FAGeI_3, FASnI_3, and FAZnI_3 have better absorbance characteristics in the solar spectrum range. If the band gap structure is taken into account, FAGeI_3 will become an ideal material to replace FAPbI_3, although its performance is slightly lower than that of FAPbI_3. The toxicity of Pb is taken into account, and the Ge element can be used as a substitute element for Pb. Furthermore, we explore one of the perovskite materials, i.e., FA0.75Cs_(0.25)Sn_(0.25)Ge_(0.75)I_3 whose photovoltaic properties are close to those of FA_(0.75)Cs_(0.25)Sn_(0.5)Pb_(0.5)I_3, but the former does not contain toxic atoms.Our results pave the way for further investigating the applications of these materials in relevant technologies.展开更多
We present structural,magnetic and optical characteristics of Zn_（1-x）TM_xTe（TM = Mn,Fe,Co,Ni and x = 6.25%）,calculated through Wien2 k code,by using full potential linearized augmented plane wave（FP-LAPW） techn...We present structural,magnetic and optical characteristics of Zn_（1-x）TM_xTe（TM = Mn,Fe,Co,Ni and x = 6.25%）,calculated through Wien2 k code,by using full potential linearized augmented plane wave（FP-LAPW） technique.The optimization of the crystal structures have been done to compare the ferromagnetic（FM） and antiferromagnetic（AFM） ground state energies,to elucidate the ferromagnetic phase stability,which further has been verified through the formation and cohesive energies.Moreover,the estimated Curie temperatures T_c have demonstrated above room temperature ferromagnetism（RTFM） in Zn_（1-x）TM_xTe（TM =Mn,Fe,Co,Ni and x= 6.25%）.The calculated electronic properties have depicted that Mn- and Co-doped ZnTe behave as ferromagnetic semiconductors,while half-metallic ferromagnetic behaviors are observed in Fe- and Ni-doped ZnTe.The presence of ferromagnetism is also demonstrated to be due to both the p-d and s-d hybridizations between the host lattice cations and TM impurities.The calculated band gaps and static real dielectric constants have been observed to vary according to Penn＇s model.The evaluated band gaps lie in near visible and ultraviolet regions,which make these materials suitable for various important device applications in optoelectronic and spintronic.展开更多
In this article, we investigate the predictions of the first principles on structural stability, electronic and mechanical properties of 2D nanostructures: graphene, silicene, germanene and stenane. The electronic ban...In this article, we investigate the predictions of the first principles on structural stability, electronic and mechanical properties of 2D nanostructures: graphene, silicene, germanene and stenane. The electronic band structure and density of states in all these 2D materials are found to be generic in nature. A small band gap is generated in all the reported materials other than graphene. The linearity at the Dirac cone changes to quadratic, from graphene to stenane and a perfect semimetalicity is exhibited only by graphene. All other 2D structures tend to become semiconductors with an infinitesimal band gap. Bonding characteristics are revealed by density of states histogram, charge density contour, and Mulliken population analysis. Among all 2D materials graphene exhibits exotic mechanical properties. Analysis by born stability criteria and the calculation of formation enthalpies envisages the structural stability of all the structures in the 2D form. The calculated second order elastic stiffness tensor is used to determine the moduli of elasticity in turn to explore the mechanical properties of all these structures for the prolific use in engineering science. Graphene is found to be the strongest material but brittle in nature. Germanene and stenane exhibit ductile nature and hence could be easily incorporated with the existing technology in the semiconductor industry on substrates.展开更多
Valleytronics materials are a kind of special semiconductors which can host multiple symmetry-connected and wellseparated electron or hole pockets in the Brillouin zone when the system is slightly n or p doped. Since ...Valleytronics materials are a kind of special semiconductors which can host multiple symmetry-connected and wellseparated electron or hole pockets in the Brillouin zone when the system is slightly n or p doped. Since the low-energy particles residing in these pockets generally are not easily scattered to each other by small perturbations, they are endowed with an additional valley degree of freedom. Analogous to spin, the valley freedom can be used to process information,leading to the concept of valleytronics. The prerequisite for valleytronics is the generation of valley polarization. Thus,a focus in this field is achieving the electric generation of valley polarization, especially the static generation by the gate electric field alone. In this work, we briefly review the latest progress in this research direction, focusing on the concepts of the couplings between valley and layer, i.e., the valley–layer coupling which permits the gate-field control of the valley polarization, the couplings between valley, layer, and spin in magnetic systems, the physical properties, the novel designing schemes for electronic devices, and the material realizations of the gate-controlled valleytronics materials.展开更多
基金Project supported by the National Science Foundation of China （Grant No 2006CB921605） and the National Natural Science Foundation of China （Grant Nos 10174024 and 10474025）.
文摘With the help of ab initio full-potential linearized augmented plane wave （FPLAPW） method, calculating the electronic structure and linear optical properties is carried out for XCd2（SO4）3 （X =Tl, Rb）. The results show that Tl2Cd2（SO4）3 （TlCdS） has a larger band gap than Rb2Cd2（SO4）3 （RbCdS） and the energy bands for RbCdS are more dispersive than those of TlCdS. From their partial densities of states （PDOS）, we have observed that the hybridization between S ionic 2p and O atomic 2p orbitals forms SO4 ionic groups. The remarkable difference between RbCdS and TlCdS is, however, the degree of hybridization between cation （Tl and Rb） and its surrounding oxygen atoms. In the view of quantum chemistry, the strong p-d hybridization indicates the existence of their cation ionic bonds （Cd-O, Rb-O, and Tl-O）. The calculations of TlCdS and RbCdS show their optical properties to be less anisotropic. Their anisotropies in the optical properties mainly occur in a low photon energy region of 5-16 eV.
基金Project supported by Program for Science and Technology Innovation Talents in Universities of Henan Province,China (Grant No. 2008HASTIT008)the National Natural Science Foundation of China (Grant No. 10574039)the Key Project Foundation of Science and Technology of He’nan Province,China (Grant No. 092102210166)
文摘With the help of the ab initio full-potential linearized augmented plane wave （FPLAPW） method, calculations of the electronic structure and linear optical properties are carried out for red HgI2 and yellow HgI2. It is found that the red HgI2 has a direct gap of 1.22834 eV and the yellow HgI2 has an indirect gap of 2.11222 eV. For the red HgI2, the calculated optical spectra are qualitatively in agreement with the experimental data. Furthermore, the origins of the different peaks of ε2（ω） are discussed. Our calculated anisotropic dielectric function of the red HgI2 is a nice match with the experimental results. Our calculated results are able to reproduce the overall trend of the experimental reflectivity spectra. Although no comparable experimental and theoretical results are available, clearly, the above proves the reliability of our calculations, suggesting that our calculations should be convincing for the yellow HgI2. Finally, the different optical properties are discussed.
基金Project supported by the State Key Program for Basic Research of China (Grant No.2011CB302003)the Project of High Technology Research and Development Program of China (Grant No.2007AA03Z404)+1 种基金the National Natural Science Foundation of China (Grant Nos.60990312,61274058,61025020,and 61073101)the Natural Science Foundation of Anhui Province,China (Grant No.1208085QF116)
文摘The structural, energetic, and electronic properties of lattice highly mismatched ZnY1-xOx （Y = S, Se, Te） ternary alloys with dilute O concentrations are calculated from first principles within the density functional theory. We demonstrate the formation of an isolated intermediate electronic band structure through diluted O-substitute in zinc-blende ZnY （Y = S, Se, Te） at octahedral sites in a semiconductor by the calculations of density of states （DOS）, leading to a significant absorption below the band gap of the parent semiconductor and an enhancement of the optical absorption in the whole energy range of the solar spectrum. It is found that the intermediate band states should be described as a result of the coupling between impurity O 2p states with the conduction band states. Moreover, the intermediate bands （IBs） in ZnTeO show high stabilization with the change of O concentration resulting from the largest electronegativity difference between O and Te compared with in the other ZnSO and ZnSeO.
文摘The elastic, thermodynamic, electronic, and optical properties of recently discovered and potentially technologically important transition metal boride NbRuB, are investigated using the density functional formalism. Both generalized gradient approximation （GGA） and local density approximation （LDA） are used for optimizing the geometry and for estimating various elastic moduli and constants. The optical properties of NbRuB are studied for the first time with different photon polarizations. The frequency （energy） dependence of various optical constants complement quite well the essential features of the electronic band structure calculations. Debye temperature of NbRuB is estimated from the thermodynamical study. All these theoretical estimates are compared with published results, where available, and discussed in detail. Both electronic band structure and optical conductivity reveal robust metallic characteristics. The NbRuB possesses significant elastic anisotropy. Electronic features, on the other hand, are almost isotropic in nature. The effects of electronic band structure and Debye temperature on the emergence of superconductivity are also analyzed.
基金supported by the National Natural Science Foundation of China(No.U1304111)Program for Science&Technology Innovation Talents in Universities of Henan Province(No.14HASTIT039)the Innovation Team of Henan University of Science and Technology(2015XTD001)
文摘Density functional calculations were used to investigate the structural,electronic,optical and thermal properties of Cr_4AlB_6.The optimized lattice constants and atomic positions accord well with the experimental data.The analysis of band structure and density of states confirms the metallic nature of Cr_4AlB_6.The static dielectric constant e1（0） is about 128.0,and the maximum optical conductivity occurs at about 8.12 eV.In the photon energy range from 7.87 to 23.48 e V,Cr_4AlB_6 presents a metal reflective property.The plasma resonance frequency wp of Cr_4AlB_6 is at the photon energy of 23.85 eV,and Cr_4AlB_6 will be transparent and change from metallic to dielectric response if the incident light has frequency greater than the plasma frequency of Cr_4AlB_6.Thermodynamic properties including the primitive cell volume and thermal expansion,the bulk modulus and heat capacity Cv were further investigated with the increasing temperature and pressure by using the quasi-harmonic Debye model.
基金National Natural Science Foundation of China under Grant Nos.10576020 and 10776022
文摘Electronic and optical properties of rock-salt AIN under high pressure are investigated by first-principlesmethod based on the plane-wave basis set.Analysis of band structures suggests that the rock-salt AIN has an indirectgap of 4.53 eV,which is in good agreement with other results.By investigating the effects of pressure on the energygap,the different movement of conduction band at X point below and above 22.5 GPa is predicted.The opticalproperties including dielectric function,absorption,reflectivity,and refractive index are also calculated and analyzed.Itis found that the rock-salt AIN is transparent from the partially ultra-violet to the visible light area and hardly does thetransparence affected by the pressure.Furthermore,the curve of optical spectrum will shift to high energy area (blueshift) with increasing pressure.
基金Funded by the National Natural Science Foundation of China(No.51502179)the Colleges and Universities in Hebei Province Science and Technology Research Project(No.YQ2014033)the Hebei Key Discipline Construction Project(B2012210004 and E2013210038)
文摘We present the specific ab-initio calculations that detail the variations of perovskite BaZrO3 caused by in-plane strain. Specifically, the internal relaxation, which was not captured in the widely used biaxial strain model, was included in a complementary manner to lattice relaxation. Density functional theory as well as a hybrid functional method based on a plane wave basis set was employed to calculate the lattice structure, elastic constants, electronic properties and optical properties of perovskite BaZrO3. The lattice parameter c exhibited a clear linear dependence on the imposed in-plane strain, but the Poisson＇s ratio caused by internal relaxation was smaller than the elastic deformation, indicating an ＂inelastic＂ or ＂plastic＂ relaxation manner caused by the introduction of internal relaxation. As a result, the related electronic and optical properties of perovskite BaZrO3 were also strongly affected by the in-plane strain, which revealed an effective way to adjust the properties of perovskite BaZrO3 via internal relaxation.
基金supported by the National Natural Science Foundation of China(Nos.11047108,11147197,11005003)the Research Project of Basic and Cutting-Edge Technology of Henan Province,China(No.112300410183)the Education Department of Henan Province, China(No.2011B140002)
文摘The electronic and optical properties of graphene monoxide,a new type of semiconductor material,are theoretically studied by first-principles density functional theory.The calculated band structure shows that graphene monoxide is a semiconductor with a direct band gap of 0.95 eV.The density of states of graphene monoxide and the partial density of states for C and O are given to understand the electronic structure.In addition,we calculate the optical properties of graphene monoxide,including the complex dielectric function,absorption coefficient, complex refractive index,loss-function,reflectivity and conductivity.These results provide a physical basis for potential application in optoelectronic devices.
基金supported by the Natural Science Foundation of Fujian Province of China (Grant No. A0220001)Science Research Project of Leshan Vocational & Technical College (Grant No. KY2011001)the Key Research Project in Science and Technology of Leshan (Grant No. 2011GZD050)
文摘We present a system study on the electronic structure and optical property of boron doped semiconducting graphene nanoribbons using the density functional theory. Energy band structure, density of states, deformation density, Mulliken popular and optical spectra are considered to show the special electronic structure of boron doped semiconducting graphene nanoribbons. The C-B bond form is discussed in detail. From our analysis it is concluded that the Fermi energy of boron doped semiconducting graphene nanoribbons gets lower than that of intrinsic semiconducting graphene nanoribbons. Our results also show that the boron doped semiconducting graphene nanoribbons behave as p-type semiconducting and that the absorption coefficient of boron doped armchair graphene nanoribbons is generally enhanced between 2.0 eV and 3.3 eV. Therefore, our results have a great significance in developing nano-material for fabricating the nano-photovoltaic devices.
基金supported by the China Postdoctoral Science Foundation(No.2019M651281)。
文摘In this paper,the electronic structure and stability of the intrinsic,B-,N-,Si-,S-doped graphene are studied based on first-principles calculations of density functional theory.Firstly,the intrinsic,B-,N-,Si-,S-doped graphene structures are optimized,and then the forming energy,band structure,density of states,differential charge density are analyzed and calculated.The results show that Band Si-doped systems are p-type doping,while N is n-type doping.By comparing the forming energy,it is found that N atoms are more easily doped in graphene.In addition,for B-,N-,Si-doped systems,it is found that the doping atoms will open the band gap,leading to a great change in the band structure of the doping system.Finally,we systematically study the optical properties of the different configurations.By comparison,it is found that the order of light sensitivity in the visible region is as follows:S-doped>Si-doped>pure>B-doped>N-doped.Our results will provide theoretical guidance for the stability and electronic structure of non-metallic doped graphene.
基金Project supported by the National Natural Science Foundation of China(Grant No.11164004)the Industrial Research Project of Guizhou Province,China(Grant No.GY[2012]3060)+1 种基金the Project of Education Department of Guizhou Province,China(Grant No.[2016]215)the Special Laboratory Fund of Education Department of Guizhou Province,China(Grant No.GY[2014]217)
文摘We have discussed the materials of solar cell based on hybrid organic–inorganic halide perovskites with formamidinium(NH_2CH = NH_2^+or FA) lead iodide. Firstly, we build the structure of formamidinium lead iodide(FAPbI_3) by using the material studio. By using the first-principles calculations, the energy band structure, density of states(DOS), and partial DOS(PDOS) of the hydrazine-iodide lead halide are obtained. Then, we theoretically analyze a design scheme for perovskite solar cell materials, published in [Science 354, 861(2016)], with the photoelectric conversion efficiency that can reach 20.3%. Also, we use non-toxic elements to replace lead in FAPbI_3 without affecting its photoelectric conversion efficiency. Here in this work, we explore the energy band structure, lattice constant, light absorption efficiency, etc. After the Ca, Zn, Ge Sr, Sn, and Ta atoms replacing lead(Pb) and through comparing the spectral distributions of the solar spectrum, it can be found that FAGeI_3, FASnI_3, and FAZnI_3 have better absorbance characteristics in the solar spectrum range. If the band gap structure is taken into account, FAGeI_3 will become an ideal material to replace FAPbI_3, although its performance is slightly lower than that of FAPbI_3. The toxicity of Pb is taken into account, and the Ge element can be used as a substitute element for Pb. Furthermore, we explore one of the perovskite materials, i.e., FA0.75Cs_(0.25)Sn_(0.25)Ge_(0.75)I_3 whose photovoltaic properties are close to those of FA_(0.75)Cs_(0.25)Sn_(0.5)Pb_(0.5)I_3, but the former does not contain toxic atoms.Our results pave the way for further investigating the applications of these materials in relevant technologies.
基金the University of the Punjab, Lahore for financial support through faculty research grant program
文摘We present structural,magnetic and optical characteristics of Zn_（1-x）TM_xTe（TM = Mn,Fe,Co,Ni and x = 6.25%）,calculated through Wien2 k code,by using full potential linearized augmented plane wave（FP-LAPW） technique.The optimization of the crystal structures have been done to compare the ferromagnetic（FM） and antiferromagnetic（AFM） ground state energies,to elucidate the ferromagnetic phase stability,which further has been verified through the formation and cohesive energies.Moreover,the estimated Curie temperatures T_c have demonstrated above room temperature ferromagnetism（RTFM） in Zn_（1-x）TM_xTe（TM =Mn,Fe,Co,Ni and x= 6.25%）.The calculated electronic properties have depicted that Mn- and Co-doped ZnTe behave as ferromagnetic semiconductors,while half-metallic ferromagnetic behaviors are observed in Fe- and Ni-doped ZnTe.The presence of ferromagnetism is also demonstrated to be due to both the p-d and s-d hybridizations between the host lattice cations and TM impurities.The calculated band gaps and static real dielectric constants have been observed to vary according to Penn＇s model.The evaluated band gaps lie in near visible and ultraviolet regions,which make these materials suitable for various important device applications in optoelectronic and spintronic.
文摘In this article, we investigate the predictions of the first principles on structural stability, electronic and mechanical properties of 2D nanostructures: graphene, silicene, germanene and stenane. The electronic band structure and density of states in all these 2D materials are found to be generic in nature. A small band gap is generated in all the reported materials other than graphene. The linearity at the Dirac cone changes to quadratic, from graphene to stenane and a perfect semimetalicity is exhibited only by graphene. All other 2D structures tend to become semiconductors with an infinitesimal band gap. Bonding characteristics are revealed by density of states histogram, charge density contour, and Mulliken population analysis. Among all 2D materials graphene exhibits exotic mechanical properties. Analysis by born stability criteria and the calculation of formation enthalpies envisages the structural stability of all the structures in the 2D form. The calculated second order elastic stiffness tensor is used to determine the moduli of elasticity in turn to explore the mechanical properties of all these structures for the prolific use in engineering science. Graphene is found to be the strongest material but brittle in nature. Germanene and stenane exhibit ductile nature and hence could be easily incorporated with the existing technology in the semiconductor industry on substrates.
基金Project supported by the National Natural Science Foundation of China (Grant No. 12004035)the National Natural Science Fund for Excellent Young Scientists Fund Program(Overseas)。
文摘Valleytronics materials are a kind of special semiconductors which can host multiple symmetry-connected and wellseparated electron or hole pockets in the Brillouin zone when the system is slightly n or p doped. Since the low-energy particles residing in these pockets generally are not easily scattered to each other by small perturbations, they are endowed with an additional valley degree of freedom. Analogous to spin, the valley freedom can be used to process information,leading to the concept of valleytronics. The prerequisite for valleytronics is the generation of valley polarization. Thus,a focus in this field is achieving the electric generation of valley polarization, especially the static generation by the gate electric field alone. In this work, we briefly review the latest progress in this research direction, focusing on the concepts of the couplings between valley and layer, i.e., the valley–layer coupling which permits the gate-field control of the valley polarization, the couplings between valley, layer, and spin in magnetic systems, the physical properties, the novel designing schemes for electronic devices, and the material realizations of the gate-controlled valleytronics materials.
