N-Graphene Nanowalls via Plasma Nitrogen Incorporation and Substitution: The Experimental Evidence

Incorporating nitrogen(N)atom in graphene is considered a key technique for tuning its electrical properties.However,this is still a great challenge,and it is unclear how to build N-graphene with desired nitrogen configurations.There is a lack of experimental evidence to explain the influence and mechanism of structural defects for nitrogen incorporation into graphene compared to the derived DFT theories.Herein,this gap is bridged through a systematic study of different nitrogen-containing gaseous plasma post-treatments on graphene nanowalls(CNWs)to produce N-CNWs with incorporated and substituted nitrogen.The structural and morphological analyses describe a remarkable difference in the plasma–surface interaction,nitrogen concentration and nitrogen incorporation mechanism in CNWs by using different nitrogen-containing plasma.Electrical conductivity measurements revealed that the conductivity of the N-graphene is strongly influenced by the position and concentration of C–N bonding configurations.These findings open up a new pathway for the synthesis of N-graphene using plasma post-treatment to control the concentration and configuration of incorporated nitrogen for application-specific properties.

Synthesis of vertical graphene nanowalls by cracking n-dodecane using RF inductively-coupled plasma-enhanced chemical vapor deposition

A facile and controllable one-step method to treat liquid hydrocarbons and synthesize vertical graphene nanowalls has been developed by using the technique of inductively-coupled plasma-enhanced chemical vapor deposition for plasma cracking of n-dodecane.Herein,the morphology and microstructure of solid carbon material and graphene nanowalls are characterized in terms of different operating conditions,i.e.input power,H2/Ar ratio,injection rate and reaction temperature.The results reveal that the optimal operating conditions were 500 W,5:10,30μl min^-1 and 800℃ for the input power,H2/Ar ratio,injection rate and reaction temperature,respectively.In addition,the degree of graphitization and the gaseous product are analyzed by Raman spectroscopy and gas chromatography detection.It can be calculated from the Raman spectrum that the relative intensity of ID/IG is approximately 1.55,and I2D/IG is approximately 0.48,indicating that the graphene prepared from n-dodecane has a rich defect structure and a high degree of graphitization.By calculating the mass loading and detecting the outlet gas,we find that the cracking rate of n-dodecane is only 6%-7%and that the gaseous products below C2 mainly include CH4,C2H2,C2H4,C2H6 and H2.Among them,the proportion of hydrogen in the outlet gas of n-dodecane cracking ranges from 1.3%-15.1%under different hydrogen flows.Based on our research,we propose a brand new perspective for both liquid hydrocarbon treatment and other value-added product syntheses.

CVD preparation of vertical graphene nanowalls/VO_(2)(B)composite films with superior thermal sensitivity in uncooled infrared detector

Vanadium dioxide with superior thermal sensitivity is one of the most preferred materials used in microbolometer,and the B phase of VO_(2) is particularly prominent.However,conventional VO_(2)(B)undergoes low temperature-coefficient of resistance(TCR)values and large resistances.In this paper,simple controllable composite films of vertical graphene nanowalls/VO_(2)(B)(i.e.,VGNWs/VO_(2)(B))with a suitable square resistance(12.98 kU)and a better temperature-coefficient of resistance(TCR)(-3.2%/K)were prepared via low pressure chemical vapor deposition.The VGNWs can provide a fast channel for electron transport and enhance the conductivity of VO_(2)(B).This preparation method can provide a low cost,facile and simple pathway for the design and fabrication of high performance VO_(2)(B)thin films with superior electrical properties for its application in uncooled infrared detectors.