We report on a micro-Raman investigation of inducing defects in mono-layer, hi-layer and tri-layer graphene by γ ray radiation. It is found that the radiation exposure results in two-dimensional （2D） and G band pos...We report on a micro-Raman investigation of inducing defects in mono-layer, hi-layer and tri-layer graphene by γ ray radiation. It is found that the radiation exposure results in two-dimensional （2D） and G band position evolution with the layer number increasing and D and D~ bands rising, suggesting the presence of defects and related crystal lattice deformation in graphene. Bi-layer graphene is more stable than mono- and tri-layer graphene, indicating that the former is a better candidate in the application of radiation environments. Also, the DC electrical property of the mono-layer graphene device shows that the defects increase the carrier density.展开更多
基金Project partially supported by the National Basic Research Program of China (Grant Nos.2011CB808404 and 2009CB939703)the National Natural Science Foundation of China (Grant Nos.60825403,90607022,and 61001043)
文摘We report on a micro-Raman investigation of inducing defects in mono-layer, hi-layer and tri-layer graphene by γ ray radiation. It is found that the radiation exposure results in two-dimensional （2D） and G band position evolution with the layer number increasing and D and D~ bands rising, suggesting the presence of defects and related crystal lattice deformation in graphene. Bi-layer graphene is more stable than mono- and tri-layer graphene, indicating that the former is a better candidate in the application of radiation environments. Also, the DC electrical property of the mono-layer graphene device shows that the defects increase the carrier density.
