This paper investigates the major structural parameters, such as crystal quality and strain state of （001）-oriented GaN thin films grown on sapphire substrates by metalorganic chemical vapour deposition, using an in...This paper investigates the major structural parameters, such as crystal quality and strain state of （001）-oriented GaN thin films grown on sapphire substrates by metalorganic chemical vapour deposition, using an in-plane grazing incidence x-ray diffraction technique. The results are analysed and compared with a complementary out-of-plane x- ray diffraction technique. The twist of the GaN mosaic structure is determined through the direct grazing incidence t of （100） reflection which agrees well with the result obtained by extrapolation method. The method for directly determining the in-plane lattice parameters of the GaN layers is also presented. Combined with the biaxial strain model, it derives the lattice parameters corresponding to fully relaxed GaN films. The GaN epilayers show an increasing residual compressive stress with increasing layer thickness when the two dimensional growth stage is established, reaching to a maximum level of-0.89 GPa.展开更多
The multilayer Laue lens(MLL) is a diffractive focusing optical element which can focus hard X-rays down to the nanometer scale. In this study, a WSi_(2)/Si multilayer structure consisting of 1736 layers, with a 7.2-n...The multilayer Laue lens(MLL) is a diffractive focusing optical element which can focus hard X-rays down to the nanometer scale. In this study, a WSi_(2)/Si multilayer structure consisting of 1736 layers, with a 7.2-nm-thick outermost layer and a total thickness of 17 μm, is prepared by DC magnetron sputtering. Regarding the thin film growth rate calibration, we correct the long-term growth rate drift from 2 to 0.6%, as measured by the grazing incidence X-ray reflectivity(GIXRR). A one-dimensional line focusing resolution of 64 nm was achieved,while the diffraction efficiency was 38% of the-1 order of the MLL Shanghai Synchrotron Radiation Facility(SSRF) with the BL15U beamline.展开更多
We investigate the Ne-like Cr x-ray laser at 28.6 nm by using a modified ID lagrangian hydrodynamic code MEDI03 coupled with an atomic physics data package and a 2D ray tracing code as a post-processor. The laser pump...We investigate the Ne-like Cr x-ray laser at 28.6 nm by using a modified ID lagrangian hydrodynamic code MEDI03 coupled with an atomic physics data package and a 2D ray tracing code as a post-processor. The laser pumping configuration includes two prepulses and one main pulse. The first prepulse normally irradiates the target, while the second prepulse and the main pulse irradiate the target at grazing-incident angles. We predict that saturation can be achieved for the Ne-like Cr x-ray lasers with a total pumping energy of 125mJ, Good beam qualities with no deflecting angle and a small divergence angle of 5 mrad are observed.展开更多
The composition and stain distributions in the InGaN epitaxial films are jointly measured by employing various x-ray diffraction （XRD） techniques, including out-of-plane XRD at special planes, in-plane grazing incid...The composition and stain distributions in the InGaN epitaxial films are jointly measured by employing various x-ray diffraction （XRD） techniques, including out-of-plane XRD at special planes, in-plane grazing incidence XRD, and reciprocal space mapping （RSM）. It is confirmed that the measurement of （204） reflection allows a rapid access to estimate the composition without considering the influence of biaxial strain. The two-dimensional RSM checks composition and degree of strain relaxation jointly, revealing an inhomogeneous strain distribution profile along the growth direction. As the film thickness increases from 100 nm to 450 nm, the strain status of InGaN films gradually transfers from almost fully strained to fully relaxed state and then more In atoms incorporate into the film, while the near-interface region of InGaN films remains pseudomorphic to GaN.展开更多
It is found that ultrathin poly（3-hexylthiophene） （P3HT） film with a 2.5 nm-thick layer exhibits a higher mobility of 5.0× 10-2 cm2/V-s than its bulk counterpart. The crystalline structure of the as-fabricate...It is found that ultrathin poly（3-hexylthiophene） （P3HT） film with a 2.5 nm-thick layer exhibits a higher mobility of 5.0× 10-2 cm2/V-s than its bulk counterpart. The crystalline structure of the as-fabricated ultrathin P3HT layer is verified by atomic force microscopy as well as grazing incidence X-ray diffraction. Transient measurements of the as-fabricated transistors reveal the influence of the interface traps on charge transport. These results are explained by the trap energy level distribution at the interface manipulated by layers of polymer film.展开更多
The introduction of solvent additives is one of the most common approaches for enhancing the power conversion efficiency of organic solar cells(OSCs).However,the use of solvent additives has some negative effects,and ...The introduction of solvent additives is one of the most common approaches for enhancing the power conversion efficiency of organic solar cells(OSCs).However,the use of solvent additives has some negative effects,and an understanding of how solvent additives affect OSCs is currently limited.In this study,we developed an in situ grazing incidence wide-angle X-ray scattering(GIWAXS)technique in the SAXS beamline(BL16 B1)at the Shanghai Synchrotron Radiation Facility,and the additive effects of1,8-diiodoctane(DIO)on the performance and morphology evolution of the PTB7-Th/PC71 BM device was investigated in depth.The results revealed that the crystal size increased with the volume ratio of DIO,and a drastic evolution of lattice space and crystal coherence length was observed during thermal annealing for the first time,to our knowledge.The discrete PC71BM molecules dissolved by DIO have an effect similar to that of the nucleating agent for PTB7-Th,boosting the crystallization of PTB7-Th,reducing phase separation,and inducing more drastic morphological evolution during thermal annealing.Our results provide a deep perspective for the mechanism of solvent additives,while also showing the significance and feasibility of the in situ GIWAXS technique we developed at BL16 B1.展开更多
Under far from equilibrium conditions, the formation mechanism of solid can be studied in terms of the dynamic scaling theory. The roughness and dynamic scaling behavior of the Fe-N thin films were studied by atomic f...Under far from equilibrium conditions, the formation mechanism of solid can be studied in terms of the dynamic scaling theory. The roughness and dynamic scaling behavior of the Fe-N thin films were studied by atomic force microscopy and grazing incidence X-ray scattering. The results indicate that the roughness of the surface increases with increasing sputtering time during the course of magnetron sputtering, and the surface exhibits a fractal characteristic. While the Fe-N films prepared by compound technology—combining magnetron sputtering with plasma based ion implantation are not in agreement with the fractal theory.展开更多
Crystallographic dynamics of blend films of regioregular poly（3-hexylthiophene）（P3HT） mixed with [6-6-]-phenylC61-butyric acid methyl ester（PC61BM） treated by thermal annealing or by adding solvent 1,8-diiodooct...Crystallographic dynamics of blend films of regioregular poly（3-hexylthiophene）（P3HT） mixed with [6-6-]-phenylC61-butyric acid methyl ester（PC61BM） treated by thermal annealing or by adding solvent 1,8-diiodooctane（DIO） are characterized by 2D-grazing incidence x-ray diffraction（2D-GIXRD）. The results show that the P3 HT chains are primarily oriented with the thiophene ring edge-on to the substrate, with a small fraction of chains oriented plane-on. The interplanar spacing becomes narrow after being treated by DIO, and the coherence length of the P3 HT crystallites increases after being treated by thermal annealing or DIO, which is accompanied by a change in the orientation angle of the P3 HT lamellae. The increased ordering of P3 HT packing induced by thermal annealing or adding DIO contributes to enhanced photovoltaic performance.展开更多
基金supported by the National Natural Science Foundation of China (Grant Nos. 60506001,60776047,60976045 and 60836003)the National Basic Research Programme of China (Grant No. 2007CB936700)the National Science Foundation for Distinguished Young Scholars,China (Grant No. 60925017)
文摘This paper investigates the major structural parameters, such as crystal quality and strain state of （001）-oriented GaN thin films grown on sapphire substrates by metalorganic chemical vapour deposition, using an in-plane grazing incidence x-ray diffraction technique. The results are analysed and compared with a complementary out-of-plane x- ray diffraction technique. The twist of the GaN mosaic structure is determined through the direct grazing incidence t of （100） reflection which agrees well with the result obtained by extrapolation method. The method for directly determining the in-plane lattice parameters of the GaN layers is also presented. Combined with the biaxial strain model, it derives the lattice parameters corresponding to fully relaxed GaN films. The GaN epilayers show an increasing residual compressive stress with increasing layer thickness when the two dimensional growth stage is established, reaching to a maximum level of-0.89 GPa.
基金the National Natural Science Foundation of China(Nos.12005250,U1932167,and U1432244).
文摘The multilayer Laue lens(MLL) is a diffractive focusing optical element which can focus hard X-rays down to the nanometer scale. In this study, a WSi_(2)/Si multilayer structure consisting of 1736 layers, with a 7.2-nm-thick outermost layer and a total thickness of 17 μm, is prepared by DC magnetron sputtering. Regarding the thin film growth rate calibration, we correct the long-term growth rate drift from 2 to 0.6%, as measured by the grazing incidence X-ray reflectivity(GIXRR). A one-dimensional line focusing resolution of 64 nm was achieved,while the diffraction efficiency was 38% of the-1 order of the MLL Shanghai Synchrotron Radiation Facility(SSRF) with the BL15U beamline.
基金supported by the National Natural Science Foundation of China ( Grant Nos 60678007,60621063 and 10774184)the State Key Development Program for Basic Research of China (Grant No 2007CB815101)
文摘We investigate the Ne-like Cr x-ray laser at 28.6 nm by using a modified ID lagrangian hydrodynamic code MEDI03 coupled with an atomic physics data package and a 2D ray tracing code as a post-processor. The laser pumping configuration includes two prepulses and one main pulse. The first prepulse normally irradiates the target, while the second prepulse and the main pulse irradiate the target at grazing-incident angles. We predict that saturation can be achieved for the Ne-like Cr x-ray lasers with a total pumping energy of 125mJ, Good beam qualities with no deflecting angle and a small divergence angle of 5 mrad are observed.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60506001, 60776047, 60976045, and 60836003)the National Basic Research Programme of China (Grant No. 2007CB936700)the National Natural Science Foundation for Distinguished Young Scholars (Grant No. 60925017)
文摘The composition and stain distributions in the InGaN epitaxial films are jointly measured by employing various x-ray diffraction （XRD） techniques, including out-of-plane XRD at special planes, in-plane grazing incidence XRD, and reciprocal space mapping （RSM）. It is confirmed that the measurement of （204） reflection allows a rapid access to estimate the composition without considering the influence of biaxial strain. The two-dimensional RSM checks composition and degree of strain relaxation jointly, revealing an inhomogeneous strain distribution profile along the growth direction. As the film thickness increases from 100 nm to 450 nm, the strain status of InGaN films gradually transfers from almost fully strained to fully relaxed state and then more In atoms incorporate into the film, while the near-interface region of InGaN films remains pseudomorphic to GaN.
基金Project supported by the Special Funds for the Development of Strategic Emerging Industries in Shenzhen City,China(Grant No.JCYJ20120830154526537)the Start-up Funding of South University of Science and Technology of Chinathe Strategic Research Grant of City University of Hong Kong of China(Grant No.7002724)
文摘It is found that ultrathin poly（3-hexylthiophene） （P3HT） film with a 2.5 nm-thick layer exhibits a higher mobility of 5.0× 10-2 cm2/V-s than its bulk counterpart. The crystalline structure of the as-fabricated ultrathin P3HT layer is verified by atomic force microscopy as well as grazing incidence X-ray diffraction. Transient measurements of the as-fabricated transistors reveal the influence of the interface traps on charge transport. These results are explained by the trap energy level distribution at the interface manipulated by layers of polymer film.
基金supported by the National Natural Science Foundation of China(Nos.U1932118,2005324)the National Key R&D Program of China(Nos.2017YFA0403002,2018YFB0704201)。
文摘The introduction of solvent additives is one of the most common approaches for enhancing the power conversion efficiency of organic solar cells(OSCs).However,the use of solvent additives has some negative effects,and an understanding of how solvent additives affect OSCs is currently limited.In this study,we developed an in situ grazing incidence wide-angle X-ray scattering(GIWAXS)technique in the SAXS beamline(BL16 B1)at the Shanghai Synchrotron Radiation Facility,and the additive effects of1,8-diiodoctane(DIO)on the performance and morphology evolution of the PTB7-Th/PC71 BM device was investigated in depth.The results revealed that the crystal size increased with the volume ratio of DIO,and a drastic evolution of lattice space and crystal coherence length was observed during thermal annealing for the first time,to our knowledge.The discrete PC71BM molecules dissolved by DIO have an effect similar to that of the nucleating agent for PTB7-Th,boosting the crystallization of PTB7-Th,reducing phase separation,and inducing more drastic morphological evolution during thermal annealing.Our results provide a deep perspective for the mechanism of solvent additives,while also showing the significance and feasibility of the in situ GIWAXS technique we developed at BL16 B1.
文摘Under far from equilibrium conditions, the formation mechanism of solid can be studied in terms of the dynamic scaling theory. The roughness and dynamic scaling behavior of the Fe-N thin films were studied by atomic force microscopy and grazing incidence X-ray scattering. The results indicate that the roughness of the surface increases with increasing sputtering time during the course of magnetron sputtering, and the surface exhibits a fractal characteristic. While the Fe-N films prepared by compound technology—combining magnetron sputtering with plasma based ion implantation are not in agreement with the fractal theory.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51272022 and 11474018)the Research Fund for the Doctoral Program of Higher Education of China(Grant No.20120009130005)the Fundamental Research Funds for the Central Universities of China(Grant No.2012JBZ001)
文摘Crystallographic dynamics of blend films of regioregular poly（3-hexylthiophene）（P3HT） mixed with [6-6-]-phenylC61-butyric acid methyl ester（PC61BM） treated by thermal annealing or by adding solvent 1,8-diiodooctane（DIO） are characterized by 2D-grazing incidence x-ray diffraction（2D-GIXRD）. The results show that the P3 HT chains are primarily oriented with the thiophene ring edge-on to the substrate, with a small fraction of chains oriented plane-on. The interplanar spacing becomes narrow after being treated by DIO, and the coherence length of the P3 HT crystallites increases after being treated by thermal annealing or DIO, which is accompanied by a change in the orientation angle of the P3 HT lamellae. The increased ordering of P3 HT packing induced by thermal annealing or adding DIO contributes to enhanced photovoltaic performance.
