This paper investigates the major structural parameters, such as crystal quality and strain state of （001）-oriented GaN thin films grown on sapphire substrates by metalorganic chemical vapour deposition, using an in...This paper investigates the major structural parameters, such as crystal quality and strain state of （001）-oriented GaN thin films grown on sapphire substrates by metalorganic chemical vapour deposition, using an in-plane grazing incidence x-ray diffraction technique. The results are analysed and compared with a complementary out-of-plane x- ray diffraction technique. The twist of the GaN mosaic structure is determined through the direct grazing incidence t of （100） reflection which agrees well with the result obtained by extrapolation method. The method for directly determining the in-plane lattice parameters of the GaN layers is also presented. Combined with the biaxial strain model, it derives the lattice parameters corresponding to fully relaxed GaN films. The GaN epilayers show an increasing residual compressive stress with increasing layer thickness when the two dimensional growth stage is established, reaching to a maximum level of-0.89 GPa.展开更多
The composition and stain distributions in the InGaN epitaxial films are jointly measured by employing various x-ray diffraction （XRD） techniques, including out-of-plane XRD at special planes, in-plane grazing incid...The composition and stain distributions in the InGaN epitaxial films are jointly measured by employing various x-ray diffraction （XRD） techniques, including out-of-plane XRD at special planes, in-plane grazing incidence XRD, and reciprocal space mapping （RSM）. It is confirmed that the measurement of （204） reflection allows a rapid access to estimate the composition without considering the influence of biaxial strain. The two-dimensional RSM checks composition and degree of strain relaxation jointly, revealing an inhomogeneous strain distribution profile along the growth direction. As the film thickness increases from 100 nm to 450 nm, the strain status of InGaN films gradually transfers from almost fully strained to fully relaxed state and then more In atoms incorporate into the film, while the near-interface region of InGaN films remains pseudomorphic to GaN.展开更多
The advancement in grazing incidence X-ray scattering(GIWAXS)techniques at synchrotron radiation facilities has significantly deepened our understanding of semiconducting polymers.However,investigation of ultrathin po...The advancement in grazing incidence X-ray scattering(GIWAXS)techniques at synchrotron radiation facilities has significantly deepened our understanding of semiconducting polymers.However,investigation of ultrathin polymer films under tensile conditions poses challenge,primarily due to limitations associated with the lack of suitable sample preparation methods and new stretching devices.This study addresses these limitations by designing and developing an in-situ temperature-controllable stretching sample stage,which enables real-time structural measurements of ultrathin polymer films at Beijing Synchrotron Radiation Facility.In particular,we report,for the first time,in-situ GIWAXS results of representative semiconducting polymer thin films under variable-temperature stretching.This research has overcome the limitations imposed by sample constraints,thus facilitating the achievement of valuable insights into the behavior of ultrathin polymer films under tensile conditions.Distinct changes in the molecular ordering and packing within the polymer thin films as a result of increasing applied strain and temperature have been uncovered.This study promotes future developments in the field,thus enabling the design and optimization of intrinsically stretchable electronic devices and other technologically relevant applications.展开更多
The multilayer Laue lens(MLL) is a diffractive focusing optical element which can focus hard X-rays down to the nanometer scale. In this study, a WSi_(2)/Si multilayer structure consisting of 1736 layers, with a 7.2-n...The multilayer Laue lens(MLL) is a diffractive focusing optical element which can focus hard X-rays down to the nanometer scale. In this study, a WSi_(2)/Si multilayer structure consisting of 1736 layers, with a 7.2-nm-thick outermost layer and a total thickness of 17 μm, is prepared by DC magnetron sputtering. Regarding the thin film growth rate calibration, we correct the long-term growth rate drift from 2 to 0.6%, as measured by the grazing incidence X-ray reflectivity(GIXRR). A one-dimensional line focusing resolution of 64 nm was achieved,while the diffraction efficiency was 38% of the-1 order of the MLL Shanghai Synchrotron Radiation Facility(SSRF) with the BL15U beamline.展开更多
We investigate the Ne-like Cr x-ray laser at 28.6 nm by using a modified ID lagrangian hydrodynamic code MEDI03 coupled with an atomic physics data package and a 2D ray tracing code as a post-processor. The laser pump...We investigate the Ne-like Cr x-ray laser at 28.6 nm by using a modified ID lagrangian hydrodynamic code MEDI03 coupled with an atomic physics data package and a 2D ray tracing code as a post-processor. The laser pumping configuration includes two prepulses and one main pulse. The first prepulse normally irradiates the target, while the second prepulse and the main pulse irradiate the target at grazing-incident angles. We predict that saturation can be achieved for the Ne-like Cr x-ray lasers with a total pumping energy of 125mJ, Good beam qualities with no deflecting angle and a small divergence angle of 5 mrad are observed.展开更多
In or Ga gradients in the Cu(In1-xGax)Se2(CIGS)absorbing layer lead to change the lattice parameters of the absorbing layer,giving rise to the bandgap grading in the absorbing layer which is directly associated with t...In or Ga gradients in the Cu(In1-xGax)Se2(CIGS)absorbing layer lead to change the lattice parameters of the absorbing layer,giving rise to the bandgap grading in the absorbing layer which is directly associated with the degree of absorbing ability of the CIGS solar cell.We tried to characterize the depth profile of the lattice parameters of the CIGS absorbing layer using a glancing incidence X-ray diffraction(GIXRD)technique,and then investigate the bandgap grading of the CIGS absorbing layer.When the glancing incident angle increased from 0.50 to 5.00°,the a and c lattice parameters of the CIGS absorbing layer gradually decreased from 5.7776(3)to 5.6905(2)?,and 11.3917(3)to 11.2114(2)?,respectively.The depth profile of the lattice parameters as a function of the incident angle was consistent with vertical variation in the compositionof In or Ga with depth in the absorbing layer.The variation of the lattice parameters was due to the difference between the ionic radius of In and Ga co-occupying at the same crystallographic site.According to the results of the depth profile of the refined parameters using GIXRD data,the bandgap of the CIGS absorber layer was graded over a range of 1.222-1.532 eV.This approach allows to determine the In or Ga gradients in the CIGS absorbing layer,and to nondestructively guess the bandgap depth profile through the refinement of the lattice parameters using GIXRD data on the assumption that the changes of the lattice parameters or unit-cell volume follow a good approximation to Vegard’s law.展开更多
SrTiO3 thin films are epitaxially grown on DyScO3, LaAlO3 substrates with/without buffer layers of DyScO3 and SrRuO3 using laser-MBE. X-ray diffraction methods, such as high resolution X-ray diffraction, grazing incid...SrTiO3 thin films are epitaxially grown on DyScO3, LaAlO3 substrates with/without buffer layers of DyScO3 and SrRuO3 using laser-MBE. X-ray diffraction methods, such as high resolution X-ray diffraction, grazing incident X-ray diffraction, and reciprocal space mapping are used to investigate the lattice structure, dislocation density, in-plane lattice strain distribution along film thickness. From the measurement results, the effects of substrate on film lattice quality and microstructure are discussed.展开更多
在国内发展了硬X射线微束掠入射实验方法,并将此具有微米级高空间分辨率的方法应用于纳米厚度薄膜的微区分析。该实验方法对分析样品表面或薄膜在微小区域的不均匀组分、结构、厚度、粗糙度和表面元素化学价态等信息具有重要意义。基于...在国内发展了硬X射线微束掠入射实验方法,并将此具有微米级高空间分辨率的方法应用于纳米厚度薄膜的微区分析。该实验方法对分析样品表面或薄膜在微小区域的不均匀组分、结构、厚度、粗糙度和表面元素化学价态等信息具有重要意义。基于X射线全反射原理,以微聚焦实验站的高通量、能量可调的单色微束X射线为基础,通过集成运动控制、光强探测、衍射和荧光探测,设计了掠入射实验方法的控制和数据采集系统。此系统采用分布式控制结构,并基于Experimental Physics and Industrial Control System (EPICS)环境设计SPEC控制软件。通过建立SPEC和EPICS的访问通道,实现SPEC软件对EPICS平台上设备的控制和数据获取。在所设计的控制和数据采集系统中,运动控制系统控制多维样品台电机的运动,实现定位样品位置和调节掠入射角;光强探测系统则监测样品出射光强度,通过样品台运动控制和光强探测的联控,实现样品台的扫描定位控制;通过衍射和荧光探测系统获取不同入射深度下样品的衍射峰强度和荧光计数。此外,为准确控制掠入射角角度,必须确定样品平面与X射线平行的零角度位置,对此给出一种自动定位零角度的方法,编写了该方法的控制算法,设计了相应的控制软件。零角度自动化定位的扫描结果表明,实验系统微区分析的空间分辨率达到2.8 μm,零角度定位精度小于±0.01°。利用该系统在上海光源微聚焦实验站首次实现了具有自动化准确控制零角度的微束掠入射X射线衍射和荧光同步表征的实验方法,实验中被测样品为10 nm Au/Cr/Si薄膜材料, Si基底最上层为10 nm厚的Au薄膜,其间为一层很薄的Cr粘附层。在不同掠入射角下测量样品的衍射信号,获取不同入射深度下样品的衍射峰强度,并实现在同一掠入射角下,同步采集样品的荧光计数信号,从而确定了样品表层的相结构信息以及荧光信号强度与入射角关系,实现了对纳米厚度薄膜在微小区域的相结构和组分分析。此外,通过该技术能够选取荧光计数最大值对应的入射角度,有助于提高后续发展的低浓度样品掠入射X射线吸收近边结构实验方法的信噪比。展开更多
基金supported by the National Natural Science Foundation of China (Grant Nos. 60506001,60776047,60976045 and 60836003)the National Basic Research Programme of China (Grant No. 2007CB936700)the National Science Foundation for Distinguished Young Scholars,China (Grant No. 60925017)
文摘This paper investigates the major structural parameters, such as crystal quality and strain state of （001）-oriented GaN thin films grown on sapphire substrates by metalorganic chemical vapour deposition, using an in-plane grazing incidence x-ray diffraction technique. The results are analysed and compared with a complementary out-of-plane x- ray diffraction technique. The twist of the GaN mosaic structure is determined through the direct grazing incidence t of （100） reflection which agrees well with the result obtained by extrapolation method. The method for directly determining the in-plane lattice parameters of the GaN layers is also presented. Combined with the biaxial strain model, it derives the lattice parameters corresponding to fully relaxed GaN films. The GaN epilayers show an increasing residual compressive stress with increasing layer thickness when the two dimensional growth stage is established, reaching to a maximum level of-0.89 GPa.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60506001, 60776047, 60976045, and 60836003)the National Basic Research Programme of China (Grant No. 2007CB936700)the National Natural Science Foundation for Distinguished Young Scholars (Grant No. 60925017)
文摘The composition and stain distributions in the InGaN epitaxial films are jointly measured by employing various x-ray diffraction （XRD） techniques, including out-of-plane XRD at special planes, in-plane grazing incidence XRD, and reciprocal space mapping （RSM）. It is confirmed that the measurement of （204） reflection allows a rapid access to estimate the composition without considering the influence of biaxial strain. The two-dimensional RSM checks composition and degree of strain relaxation jointly, revealing an inhomogeneous strain distribution profile along the growth direction. As the film thickness increases from 100 nm to 450 nm, the strain status of InGaN films gradually transfers from almost fully strained to fully relaxed state and then more In atoms incorporate into the film, while the near-interface region of InGaN films remains pseudomorphic to GaN.
基金the support from the Science Fund for Distinguished Young Scholars of Tianjin (23JCJQJC00240)the Fundamental Research Funds for the Central Universities+2 种基金the Collaborative Innovation Center of Chemical Science and Engineering (Tianjin)Peiyang Scholar Program of Tianjin Universitysupported by the National Natural Science Foundation of China (12375302)。
文摘The advancement in grazing incidence X-ray scattering(GIWAXS)techniques at synchrotron radiation facilities has significantly deepened our understanding of semiconducting polymers.However,investigation of ultrathin polymer films under tensile conditions poses challenge,primarily due to limitations associated with the lack of suitable sample preparation methods and new stretching devices.This study addresses these limitations by designing and developing an in-situ temperature-controllable stretching sample stage,which enables real-time structural measurements of ultrathin polymer films at Beijing Synchrotron Radiation Facility.In particular,we report,for the first time,in-situ GIWAXS results of representative semiconducting polymer thin films under variable-temperature stretching.This research has overcome the limitations imposed by sample constraints,thus facilitating the achievement of valuable insights into the behavior of ultrathin polymer films under tensile conditions.Distinct changes in the molecular ordering and packing within the polymer thin films as a result of increasing applied strain and temperature have been uncovered.This study promotes future developments in the field,thus enabling the design and optimization of intrinsically stretchable electronic devices and other technologically relevant applications.
基金the National Natural Science Foundation of China(Nos.12005250,U1932167,and U1432244).
文摘The multilayer Laue lens(MLL) is a diffractive focusing optical element which can focus hard X-rays down to the nanometer scale. In this study, a WSi_(2)/Si multilayer structure consisting of 1736 layers, with a 7.2-nm-thick outermost layer and a total thickness of 17 μm, is prepared by DC magnetron sputtering. Regarding the thin film growth rate calibration, we correct the long-term growth rate drift from 2 to 0.6%, as measured by the grazing incidence X-ray reflectivity(GIXRR). A one-dimensional line focusing resolution of 64 nm was achieved,while the diffraction efficiency was 38% of the-1 order of the MLL Shanghai Synchrotron Radiation Facility(SSRF) with the BL15U beamline.
基金supported by the National Natural Science Foundation of China ( Grant Nos 60678007,60621063 and 10774184)the State Key Development Program for Basic Research of China (Grant No 2007CB815101)
文摘We investigate the Ne-like Cr x-ray laser at 28.6 nm by using a modified ID lagrangian hydrodynamic code MEDI03 coupled with an atomic physics data package and a 2D ray tracing code as a post-processor. The laser pumping configuration includes two prepulses and one main pulse. The first prepulse normally irradiates the target, while the second prepulse and the main pulse irradiate the target at grazing-incident angles. We predict that saturation can be achieved for the Ne-like Cr x-ray lasers with a total pumping energy of 125mJ, Good beam qualities with no deflecting angle and a small divergence angle of 5 mrad are observed.
基金supported by Korea Research Institute of Standards and Science(KRISS–2019–GP2019-0014)。
文摘In or Ga gradients in the Cu(In1-xGax)Se2(CIGS)absorbing layer lead to change the lattice parameters of the absorbing layer,giving rise to the bandgap grading in the absorbing layer which is directly associated with the degree of absorbing ability of the CIGS solar cell.We tried to characterize the depth profile of the lattice parameters of the CIGS absorbing layer using a glancing incidence X-ray diffraction(GIXRD)technique,and then investigate the bandgap grading of the CIGS absorbing layer.When the glancing incident angle increased from 0.50 to 5.00°,the a and c lattice parameters of the CIGS absorbing layer gradually decreased from 5.7776(3)to 5.6905(2)?,and 11.3917(3)to 11.2114(2)?,respectively.The depth profile of the lattice parameters as a function of the incident angle was consistent with vertical variation in the compositionof In or Ga with depth in the absorbing layer.The variation of the lattice parameters was due to the difference between the ionic radius of In and Ga co-occupying at the same crystallographic site.According to the results of the depth profile of the refined parameters using GIXRD data,the bandgap of the CIGS absorber layer was graded over a range of 1.222-1.532 eV.This approach allows to determine the In or Ga gradients in the CIGS absorbing layer,and to nondestructively guess the bandgap depth profile through the refinement of the lattice parameters using GIXRD data on the assumption that the changes of the lattice parameters or unit-cell volume follow a good approximation to Vegard’s law.
基金Supported by National Natural Science Foundation of China (10774065)Science Foundation for Excellent Youth Scholars of Huaiyin Normal University (08QNZCK 005)
文摘SrTiO3 thin films are epitaxially grown on DyScO3, LaAlO3 substrates with/without buffer layers of DyScO3 and SrRuO3 using laser-MBE. X-ray diffraction methods, such as high resolution X-ray diffraction, grazing incident X-ray diffraction, and reciprocal space mapping are used to investigate the lattice structure, dislocation density, in-plane lattice strain distribution along film thickness. From the measurement results, the effects of substrate on film lattice quality and microstructure are discussed.
文摘在国内发展了硬X射线微束掠入射实验方法,并将此具有微米级高空间分辨率的方法应用于纳米厚度薄膜的微区分析。该实验方法对分析样品表面或薄膜在微小区域的不均匀组分、结构、厚度、粗糙度和表面元素化学价态等信息具有重要意义。基于X射线全反射原理,以微聚焦实验站的高通量、能量可调的单色微束X射线为基础,通过集成运动控制、光强探测、衍射和荧光探测,设计了掠入射实验方法的控制和数据采集系统。此系统采用分布式控制结构,并基于Experimental Physics and Industrial Control System (EPICS)环境设计SPEC控制软件。通过建立SPEC和EPICS的访问通道,实现SPEC软件对EPICS平台上设备的控制和数据获取。在所设计的控制和数据采集系统中,运动控制系统控制多维样品台电机的运动,实现定位样品位置和调节掠入射角;光强探测系统则监测样品出射光强度,通过样品台运动控制和光强探测的联控,实现样品台的扫描定位控制;通过衍射和荧光探测系统获取不同入射深度下样品的衍射峰强度和荧光计数。此外,为准确控制掠入射角角度,必须确定样品平面与X射线平行的零角度位置,对此给出一种自动定位零角度的方法,编写了该方法的控制算法,设计了相应的控制软件。零角度自动化定位的扫描结果表明,实验系统微区分析的空间分辨率达到2.8 μm,零角度定位精度小于±0.01°。利用该系统在上海光源微聚焦实验站首次实现了具有自动化准确控制零角度的微束掠入射X射线衍射和荧光同步表征的实验方法,实验中被测样品为10 nm Au/Cr/Si薄膜材料, Si基底最上层为10 nm厚的Au薄膜,其间为一层很薄的Cr粘附层。在不同掠入射角下测量样品的衍射信号,获取不同入射深度下样品的衍射峰强度,并实现在同一掠入射角下,同步采集样品的荧光计数信号,从而确定了样品表层的相结构信息以及荧光信号强度与入射角关系,实现了对纳米厚度薄膜在微小区域的相结构和组分分析。此外,通过该技术能够选取荧光计数最大值对应的入射角度,有助于提高后续发展的低浓度样品掠入射X射线吸收近边结构实验方法的信噪比。
