Diamond films were prepared at different grid bias and substrate bias in hot filament chemical vapor deposition (HFCVD) system. The Raman and SEM results show that grain size decreases and non-diamond impurities incre...Diamond films were prepared at different grid bias and substrate bias in hot filament chemical vapor deposition (HFCVD) system. The Raman and SEM results show that grain size decreases and non-diamond impurities increase for applying grid and substrate bias currents. The defects and impurities in the film increase with the decrease of grain size, which causes the decrease of hardness and elastic modulus of diamond films. The fracture toughness of film increases because of the grain size effects by applying bias. The grid bias and substrate bias make the friction coefficient smaller because of the smaller grain size and lubricating effect of graphite in the film. But the excessively high substrate bias current will lead to the dramatic decrease of mechanical properties of CVD diamond as a lot of non-diamond impurities appear in the film.展开更多
To further improve the oxidation-resistance of materials and reduce the cost of grid plates in grate-kiln, a new kind of heat-resistant grid plate was developed. The microstructure of this grid plate with a life more ...To further improve the oxidation-resistance of materials and reduce the cost of grid plates in grate-kiln, a new kind of heat-resistant grid plate was developed. The microstructure of this grid plate with a life more than 18 months was studied by XRD, SEM and EDS techniques. The results show that high hardness, high intensity and good impact property make the new kind of heat-resistant grid plate and its oxide film have a higher resistance to deformation and abrasion at 900-1000℃ Besides, small grain size is beneficial to form a complete protective oxide film. The oxide film composed of SiO2 layer, Cr2O3 layer and Fe2O3 layer is rather thin and bonds closely with the backing. The forming of the chemical stable nickel-rich layer increases the density of Cr2O3 layer.展开更多
In order to measure differential cross sections of the 10B(n,α)7Li reaction induced by MeV neutrons using the forward-backward coincidence method, a thin film 10B sample was designed and the 10B atom number was deter...In order to measure differential cross sections of the 10B(n,α)7Li reaction induced by MeV neutrons using the forward-backward coincidence method, a thin film 10B sample was designed and the 10B atom number was determined with a reference 10B film sample. Alpha counts of the 10B(nth,α)7Li reaction from the 10B thin film and the reference sample were measured using a gridded ionization chamber and thermal neutrons, which were moderated and thermalized by paraffin from fast neutrons produced in D(d,n)3He reaction on a 4.5 MV Van de Graaff. The neutron flux was normalized by measuring the fission yield of a small 238U fission chamber.展开更多
通过光刻掩膜技术、电阻热蒸发沉积技术制备电磁屏蔽窗口金属网栅薄膜,研究金属网栅的红外透射率和电磁屏蔽效能。为了能有效地屏蔽电磁波,使用CST Studio Suite电磁仿真软件设计不同周期、线宽的金属网栅,采用光刻掩膜技术、电阻热蒸...通过光刻掩膜技术、电阻热蒸发沉积技术制备电磁屏蔽窗口金属网栅薄膜,研究金属网栅的红外透射率和电磁屏蔽效能。为了能有效地屏蔽电磁波,使用CST Studio Suite电磁仿真软件设计不同周期、线宽的金属网栅,采用光刻掩膜技术、电阻热蒸发技术在双面抛光单晶硅基片上完成线宽为30μm,周期分别为350μm、450μm、550μm、650μm、750μm的金属网栅薄膜的制备。采用真空型傅立叶红外光谱仪和矢量网络分析仪分别对不同结构参数金属网栅薄膜的光谱特性和电磁屏蔽效能进行测试。结果:实现在双面抛光单晶硅基底上制备的网栅在12~18 GHz频段内,网栅的电磁屏蔽效能均达到12 dB以上。在3~5μm波段的透射率损失仅为8%。为了得到既具有高透光率,又具有强电磁屏蔽效能金属网栅薄膜需要合理设计金属网栅的线宽和周期。制备过程中网栅的光学-电学特性不仅受周期和线宽影响,掩膜板的加工精度、金属网栅的加工缺陷等也会造成不同程度的影响。展开更多
基金Project(0802025B) supported by Jiangsu Provincial Postdoctoral Science Foundation, ChinaProject(BK2008382) supported by Natural Science Foundation of Jiangsu Province, China
文摘Diamond films were prepared at different grid bias and substrate bias in hot filament chemical vapor deposition (HFCVD) system. The Raman and SEM results show that grain size decreases and non-diamond impurities increase for applying grid and substrate bias currents. The defects and impurities in the film increase with the decrease of grain size, which causes the decrease of hardness and elastic modulus of diamond films. The fracture toughness of film increases because of the grain size effects by applying bias. The grid bias and substrate bias make the friction coefficient smaller because of the smaller grain size and lubricating effect of graphite in the film. But the excessively high substrate bias current will lead to the dramatic decrease of mechanical properties of CVD diamond as a lot of non-diamond impurities appear in the film.
文摘To further improve the oxidation-resistance of materials and reduce the cost of grid plates in grate-kiln, a new kind of heat-resistant grid plate was developed. The microstructure of this grid plate with a life more than 18 months was studied by XRD, SEM and EDS techniques. The results show that high hardness, high intensity and good impact property make the new kind of heat-resistant grid plate and its oxide film have a higher resistance to deformation and abrasion at 900-1000℃ Besides, small grain size is beneficial to form a complete protective oxide film. The oxide film composed of SiO2 layer, Cr2O3 layer and Fe2O3 layer is rather thin and bonds closely with the backing. The forming of the chemical stable nickel-rich layer increases the density of Cr2O3 layer.
基金Supported by National Natural Science Foundation of China (10575006 and 10811120014) and China Nuclear Data Center
文摘In order to measure differential cross sections of the 10B(n,α)7Li reaction induced by MeV neutrons using the forward-backward coincidence method, a thin film 10B sample was designed and the 10B atom number was determined with a reference 10B film sample. Alpha counts of the 10B(nth,α)7Li reaction from the 10B thin film and the reference sample were measured using a gridded ionization chamber and thermal neutrons, which were moderated and thermalized by paraffin from fast neutrons produced in D(d,n)3He reaction on a 4.5 MV Van de Graaff. The neutron flux was normalized by measuring the fission yield of a small 238U fission chamber.
文摘通过光刻掩膜技术、电阻热蒸发沉积技术制备电磁屏蔽窗口金属网栅薄膜,研究金属网栅的红外透射率和电磁屏蔽效能。为了能有效地屏蔽电磁波,使用CST Studio Suite电磁仿真软件设计不同周期、线宽的金属网栅,采用光刻掩膜技术、电阻热蒸发技术在双面抛光单晶硅基片上完成线宽为30μm,周期分别为350μm、450μm、550μm、650μm、750μm的金属网栅薄膜的制备。采用真空型傅立叶红外光谱仪和矢量网络分析仪分别对不同结构参数金属网栅薄膜的光谱特性和电磁屏蔽效能进行测试。结果:实现在双面抛光单晶硅基底上制备的网栅在12~18 GHz频段内,网栅的电磁屏蔽效能均达到12 dB以上。在3~5μm波段的透射率损失仅为8%。为了得到既具有高透光率,又具有强电磁屏蔽效能金属网栅薄膜需要合理设计金属网栅的线宽和周期。制备过程中网栅的光学-电学特性不仅受周期和线宽影响,掩膜板的加工精度、金属网栅的加工缺陷等也会造成不同程度的影响。
