A new method using group-induced second-order long waves (GSLW) to describe wave groups is presented in this paper on the basis of the GSLW theory by Longuet- Higgins and Steward (1964) . In the method , the parabolic...A new method using group-induced second-order long waves (GSLW) to describe wave groups is presented in this paper on the basis of the GSLW theory by Longuet- Higgins and Steward (1964) . In the method , the parabolic relationship between GSLW and the wave envelope is first deduced , and then the distribution function of GSLW amplitude is derived . Thus, the formulae in terms of the moments of GSLW and short wave spectra for the average time duration and the mean length of runs of wave heights exceeding a certain level can be derived . A new groupiness factor equivalent to half the mean wave number in wave groups is defined by taking into account the widths of spectra of GSLW and short waves . Compared with theoretical results of others , ours are closer to measured wave data .展开更多
The physical trend of group-I/tellurides is unexpected and contrary to the conventional wisdom. The present firstprinciples calculations give fundamental insights into the extent to which group-Ⅱ telluride compounds ...The physical trend of group-I/tellurides is unexpected and contrary to the conventional wisdom. The present firstprinciples calculations give fundamental insights into the extent to which group-Ⅱ telluride compounds present special properties upon mixing the d valence character. Our results provide explanations for the unexpected experimental observations based on the abnormal binding ordering of metal d electrons and their strong perturbation to the band edge states. The insights into the binary tellurides are useful for the study and control of the structural and chemical perturbation in their ternary alloys and heterostructures.展开更多
Pb-based group-IV chalcogenides including Pb Te and Pb Se have been extensively studied as high performance thermoelectric materials during the past few decades.However,the toxicity of Pb inhibits their applications i...Pb-based group-IV chalcogenides including Pb Te and Pb Se have been extensively studied as high performance thermoelectric materials during the past few decades.However,the toxicity of Pb inhibits their applications in vast fields due to the serious harm to the environment.Recently the Pb-free group-IV chalcogenides have become an extensive research subject as promising thermoelectric materials because of their unique thermal and electronic transport properties as well as the enviromentally friendly advantage.This paper briefly summarizes the recent research advances in Sn-,Ge-,and Sichalcogenides thermoelectrics,showing the unexceptionally high thermoelectric performance in Sn Se single crystal,and the significant improvement in thermoelectric performance for those polycrystalline materials by successfully modulating the electronic and thermal transport through using some well-developed strategies including band engineering,nanostructuring and defect engineering.In addition,some important issues for future device applications,including N-type doping and mechanical and chemical stabilities of the new thermoelectrics,are also discussed.展开更多
基金This project was funded by the National Natural Science Foundation of China
文摘A new method using group-induced second-order long waves (GSLW) to describe wave groups is presented in this paper on the basis of the GSLW theory by Longuet- Higgins and Steward (1964) . In the method , the parabolic relationship between GSLW and the wave envelope is first deduced , and then the distribution function of GSLW amplitude is derived . Thus, the formulae in terms of the moments of GSLW and short wave spectra for the average time duration and the mean length of runs of wave heights exceeding a certain level can be derived . A new groupiness factor equivalent to half the mean wave number in wave groups is defined by taking into account the widths of spectra of GSLW and short waves . Compared with theoretical results of others , ours are closer to measured wave data .
基金supported by the National Natural Science Foundation of China (Grant Nos. 10847111 and 61006091)the Startup Project for Ph. D. of Guangdong University of Technology (Grant No. 083034)the Fundamental Research Funds for the Central Universities of South China University of Technology (Grant No. 2009ZM0022)
文摘The physical trend of group-I/tellurides is unexpected and contrary to the conventional wisdom. The present firstprinciples calculations give fundamental insights into the extent to which group-Ⅱ telluride compounds present special properties upon mixing the d valence character. Our results provide explanations for the unexpected experimental observations based on the abnormal binding ordering of metal d electrons and their strong perturbation to the band edge states. The insights into the binary tellurides are useful for the study and control of the structural and chemical perturbation in their ternary alloys and heterostructures.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51472052 and U1601213)
文摘Pb-based group-IV chalcogenides including Pb Te and Pb Se have been extensively studied as high performance thermoelectric materials during the past few decades.However,the toxicity of Pb inhibits their applications in vast fields due to the serious harm to the environment.Recently the Pb-free group-IV chalcogenides have become an extensive research subject as promising thermoelectric materials because of their unique thermal and electronic transport properties as well as the enviromentally friendly advantage.This paper briefly summarizes the recent research advances in Sn-,Ge-,and Sichalcogenides thermoelectrics,showing the unexceptionally high thermoelectric performance in Sn Se single crystal,and the significant improvement in thermoelectric performance for those polycrystalline materials by successfully modulating the electronic and thermal transport through using some well-developed strategies including band engineering,nanostructuring and defect engineering.In addition,some important issues for future device applications,including N-type doping and mechanical and chemical stabilities of the new thermoelectrics,are also discussed.
