The group Ⅲ nitrides are an important class of materials with aplications in UV and visible optoelectronics,high temperature electronics,cold cathodes and solar blind detectors.In recent years,with the realisation of...The group Ⅲ nitrides are an important class of materials with aplications in UV and visible optoelectronics,high temperature electronics,cold cathodes and solar blind detectors.In recent years,with the realisation of nitride based LEDs,the use of GaN IED has the potential to compete with 1raditional filament and discharge lamps,for the provision of white lighting,and there has been an explosion of interest in the MOCVD growth of GaN based materials with an increasing focus on large area multiwafer reactors and wafer uniforrmity.This paper will review the design philosophy and characteristics of close-coupled showerhead reactors,relating these to the requirements of group Ⅲ-nitride growth,and will present a selection of data resulting from the operation of such equipment.These results suggest that the close coupled showerhead style of reactor is very suitable for the growth of GaN based structures in both research and production environments.展开更多
WT9.BZ]A quasi-thermodynamic model of MOVPE growth of Ga xAl yIn 1-x-y N alloys has been proposed with TMGa,TMAl,TMIn and ammonia as sources.In this model,the effect of decomposition of ammonia has been con- si...WT9.BZ]A quasi-thermodynamic model of MOVPE growth of Ga xAl yIn 1-x-y N alloys has been proposed with TMGa,TMAl,TMIn and ammonia as sources.In this model,the effect of decomposition of ammonia has been con- sidered and the number of moles is used to express the mass conservation constraints of element N,H,Ga,Al and In.It is assumed that the alloy is synthesized by the reactions between ammonia and group Ⅲ elements.The influence of growth conditions on the relationship between Ga xAl yIn 1-x-y N lattice matched to GaN and input group Ⅲ metalorganic compounds has been calculated.Almost all the aluminum and gallium reaching the growing surface are incorporated in the alloy.In order to enhance the incorporation of indium into Ga xAl yIn 1-x-y N,lower growth temperature and higher input Ⅴ/Ⅲ ratio should be used and the decomposed fraction of ammonia should be reduced.展开更多
文摘The group Ⅲ nitrides are an important class of materials with aplications in UV and visible optoelectronics,high temperature electronics,cold cathodes and solar blind detectors.In recent years,with the realisation of nitride based LEDs,the use of GaN IED has the potential to compete with 1raditional filament and discharge lamps,for the provision of white lighting,and there has been an explosion of interest in the MOCVD growth of GaN based materials with an increasing focus on large area multiwafer reactors and wafer uniforrmity.This paper will review the design philosophy and characteristics of close-coupled showerhead reactors,relating these to the requirements of group Ⅲ-nitride growth,and will present a selection of data resulting from the operation of such equipment.These results suggest that the close coupled showerhead style of reactor is very suitable for the growth of GaN based structures in both research and production environments.
文摘WT9.BZ]A quasi-thermodynamic model of MOVPE growth of Ga xAl yIn 1-x-y N alloys has been proposed with TMGa,TMAl,TMIn and ammonia as sources.In this model,the effect of decomposition of ammonia has been con- sidered and the number of moles is used to express the mass conservation constraints of element N,H,Ga,Al and In.It is assumed that the alloy is synthesized by the reactions between ammonia and group Ⅲ elements.The influence of growth conditions on the relationship between Ga xAl yIn 1-x-y N lattice matched to GaN and input group Ⅲ metalorganic compounds has been calculated.Almost all the aluminum and gallium reaching the growing surface are incorporated in the alloy.In order to enhance the incorporation of indium into Ga xAl yIn 1-x-y N,lower growth temperature and higher input Ⅴ/Ⅲ ratio should be used and the decomposed fraction of ammonia should be reduced.
文摘围绕Ⅲ族氮化物半导体在紫外战术导弹逼近告警系统中的潜在应用前景,设计出一种基于新型Ⅲ族氮化物半导体光电阴极的紫外变像管,确定了影响光电阴极光电发射性能的Al摩尔组分、膜层厚度和P型掺杂水平。利用高分辨率X射线衍射仪和紫外分光光度计,对光电阴极结构和光学日盲特性进行仿真分析和测试。紫外变像管的光谱辐射灵敏度测试结果显示:探测器像管的辐射灵敏度在220~270 nm波段范围内波动较小,在波长266 nm处的辐射灵敏度为39.7 m A/W,光谱响应从波长270 nm之后开始急剧下降,表明其本征具有良好的日盲紫外属性。基于变像管的光谱辐射灵敏度测试结果及信噪比的作用距离模型,采用MODTRAN大气模拟软件包对以此变像管为核心探测器件的导弹逼近告警系统作用距离进行迭代求解。计算结果显示:导弹逼近告警系统的作用距离可达到7.1 km.
