We examine 10 nm thick film structures containing either Hf or Ti sandwiched between two respective oxide layers. The layers are deposited onto heated substrates to create a diffusion region. We observe a high degree ...We examine 10 nm thick film structures containing either Hf or Ti sandwiched between two respective oxide layers. The layers are deposited onto heated substrates to create a diffusion region. We observe a high degree of light sensitivity of the electric current through the film thickness for one polarity of an applied voltage. For the other polarity, the current is not affected by the light. We explain the observed phenomenology using the single-particle model based on the existence of interface states on the metal-oxide interfaces.展开更多
Hafnium oxide thin films （HOTFs） were successfully deposited onto amorphous glasses using chemical bath deposition, successive ionic layer absorption and reaction （SILAR）, and sol-gel methods. The same reactive pr...Hafnium oxide thin films （HOTFs） were successfully deposited onto amorphous glasses using chemical bath deposition, successive ionic layer absorption and reaction （SILAR）, and sol-gel methods. The same reactive precursors were used for all of the methods, and all of the films were annealed at 300℃ in an oven （ambient conditions）. After this step, the optical and structural properties of the films produced by using the three different methods were compared. The structures of the films were analyzed by X-ray diffTaction （XRD）. The optical properties are investigated using the ultraviolet-visible （UV-VIS） spectroscopic technique. The film thickness was measured via atomic force microscopy （AFM） in the tapping mode. The surface properties and elemental ratios of the films were investigated and measured by scanning electron microscopy and energy-dispersive X-ray spectroscopy （EDX）. The lowest transmittance and the highest reflectance values were observed for the films produced using the SILAR method. In addition, the most intense characteristic XRD peak was observed in the diffraction pattern of the film produced using the SILAR method, and the greatest thickness and average grain size were calculated for the film produced using the SILAR method. The films produced using SILAR method contained fewer cracks than those produced using the other methods. In conclusion, the SILAR method was observed to be the best method for the production of HOTFs.展开更多
With advanced research for dielectrics including capacitors in DRAMs, decoupling filters in microcircuits and insulating gates in transistors, a lot of demand for the new challenging of high-k materials in semiconduct...With advanced research for dielectrics including capacitors in DRAMs, decoupling filters in microcircuits and insulating gates in transistors, a lot of demand for the new challenging of high-k materials in semiconductor industries has been emerged. This study explores and addresses the experimental approach for composite materials with one of the major concerns of high capacitance, and low leakage, as well as ease of integration technology. The characteristics of Al<sub>2</sub>O<sub>3</sub> supported HfO<sub>2</sub> (AHO) thin films for a series of different Hf ratios with Al<sub>2</sub>O<sub>3</sub> dielectrics by atomic layer deposition demonstrated as a candidate material. A composite AHO films with the homogeneous compositions of Al and Hf atoms into the Al-Hf-O mixed oxide system could stabilize the polycrystalline structure with increasing of dielectric constant (k) and decreasing of leakage current density, as well as a higher breakdown voltage than HfO<sub>2</sub> film on its own. 70 nm thick AHO thin films with different composition of Al and Hf contents were prepared by atomic layer deposition technique on titanium nitride (TiN) and silicon dioxide (SiO<sub>2</sub>) coated Si substrates. Photolithography and metal lift-off technique were used for the device fabrication of the metal-insulator-metal (MIM) capacitor structures. AHO films on TiN/SiO<sub>2</sub>/Si were measured by semiconductor analyzer and source/ measure system with probe station in the voltage range from -5 to 5 V with a frequency range from 10 kHz to 1 MHz were used to conduct capacitance-voltage (C-V) measurements with low/medium frequency range and current-voltage (I-V) measurements. It was found that Au/AHO/TiN/SiO<sub>2</sub>/Si MIM capacitors demonstrate a capacitance density of 1.5 - 4.5 fF/μm<sup>2</sup> at 10 kHz, a loss tangent of 0.02 - 0.04 at 10 kHz, dielectric constant of 11.7 - 35.5 depending on the composition and a low leakage current of 1.7 × 10<sup>-9</sup> A/cm<sup>2</sup> at 0.5 MV/cm at room temperature. The acquired experimental results could show the possibility of compositional alloy thin films that could potentially replace or open new market for high-k challenges in semiconductor technology.展开更多
采用溶胶凝胶法制备了h-k氧化铪HfO2薄膜,经500?C退火后,获得了高透过率、表面光滑、低漏电流和相对高介电常数的HfO2薄膜.并采用氧化铪作为绝缘层和锌铟锡氧化物作为有源层成功地制备了底栅顶接触结构薄膜晶体管器件.获得的薄膜晶体管...采用溶胶凝胶法制备了h-k氧化铪HfO2薄膜,经500?C退火后,获得了高透过率、表面光滑、低漏电流和相对高介电常数的HfO2薄膜.并采用氧化铪作为绝缘层和锌铟锡氧化物作为有源层成功地制备了底栅顶接触结构薄膜晶体管器件.获得的薄膜晶体管器件的饱和迁移率大于100 cm2·V1·s1,阈值电压为-0.5V,开关比为5×106,亚阈值摆幅为105 m V/decade.表明采用溶胶凝胶制备的薄膜晶体管具备高的迁移率,其迁移率接近低温多晶硅薄膜晶体管的迁移率.展开更多
文摘We examine 10 nm thick film structures containing either Hf or Ti sandwiched between two respective oxide layers. The layers are deposited onto heated substrates to create a diffusion region. We observe a high degree of light sensitivity of the electric current through the film thickness for one polarity of an applied voltage. For the other polarity, the current is not affected by the light. We explain the observed phenomenology using the single-particle model based on the existence of interface states on the metal-oxide interfaces.
文摘Hafnium oxide thin films （HOTFs） were successfully deposited onto amorphous glasses using chemical bath deposition, successive ionic layer absorption and reaction （SILAR）, and sol-gel methods. The same reactive precursors were used for all of the methods, and all of the films were annealed at 300℃ in an oven （ambient conditions）. After this step, the optical and structural properties of the films produced by using the three different methods were compared. The structures of the films were analyzed by X-ray diffTaction （XRD）. The optical properties are investigated using the ultraviolet-visible （UV-VIS） spectroscopic technique. The film thickness was measured via atomic force microscopy （AFM） in the tapping mode. The surface properties and elemental ratios of the films were investigated and measured by scanning electron microscopy and energy-dispersive X-ray spectroscopy （EDX）. The lowest transmittance and the highest reflectance values were observed for the films produced using the SILAR method. In addition, the most intense characteristic XRD peak was observed in the diffraction pattern of the film produced using the SILAR method, and the greatest thickness and average grain size were calculated for the film produced using the SILAR method. The films produced using SILAR method contained fewer cracks than those produced using the other methods. In conclusion, the SILAR method was observed to be the best method for the production of HOTFs.
文摘With advanced research for dielectrics including capacitors in DRAMs, decoupling filters in microcircuits and insulating gates in transistors, a lot of demand for the new challenging of high-k materials in semiconductor industries has been emerged. This study explores and addresses the experimental approach for composite materials with one of the major concerns of high capacitance, and low leakage, as well as ease of integration technology. The characteristics of Al<sub>2</sub>O<sub>3</sub> supported HfO<sub>2</sub> (AHO) thin films for a series of different Hf ratios with Al<sub>2</sub>O<sub>3</sub> dielectrics by atomic layer deposition demonstrated as a candidate material. A composite AHO films with the homogeneous compositions of Al and Hf atoms into the Al-Hf-O mixed oxide system could stabilize the polycrystalline structure with increasing of dielectric constant (k) and decreasing of leakage current density, as well as a higher breakdown voltage than HfO<sub>2</sub> film on its own. 70 nm thick AHO thin films with different composition of Al and Hf contents were prepared by atomic layer deposition technique on titanium nitride (TiN) and silicon dioxide (SiO<sub>2</sub>) coated Si substrates. Photolithography and metal lift-off technique were used for the device fabrication of the metal-insulator-metal (MIM) capacitor structures. AHO films on TiN/SiO<sub>2</sub>/Si were measured by semiconductor analyzer and source/ measure system with probe station in the voltage range from -5 to 5 V with a frequency range from 10 kHz to 1 MHz were used to conduct capacitance-voltage (C-V) measurements with low/medium frequency range and current-voltage (I-V) measurements. It was found that Au/AHO/TiN/SiO<sub>2</sub>/Si MIM capacitors demonstrate a capacitance density of 1.5 - 4.5 fF/μm<sup>2</sup> at 10 kHz, a loss tangent of 0.02 - 0.04 at 10 kHz, dielectric constant of 11.7 - 35.5 depending on the composition and a low leakage current of 1.7 × 10<sup>-9</sup> A/cm<sup>2</sup> at 0.5 MV/cm at room temperature. The acquired experimental results could show the possibility of compositional alloy thin films that could potentially replace or open new market for high-k challenges in semiconductor technology.
文摘采用溶胶凝胶法制备了h-k氧化铪HfO2薄膜,经500?C退火后,获得了高透过率、表面光滑、低漏电流和相对高介电常数的HfO2薄膜.并采用氧化铪作为绝缘层和锌铟锡氧化物作为有源层成功地制备了底栅顶接触结构薄膜晶体管器件.获得的薄膜晶体管器件的饱和迁移率大于100 cm2·V1·s1,阈值电压为-0.5V,开关比为5×106,亚阈值摆幅为105 m V/decade.表明采用溶胶凝胶制备的薄膜晶体管具备高的迁移率,其迁移率接近低温多晶硅薄膜晶体管的迁移率.
