The effect of tert-butyl hydroperoxide-sodium pyrosulfite((CH3)3COOH-Na2S2O5)as an initiator system in H2O2-based slurry was investigated for the abrasive-free polishing(AFP)of a hard disk substrate.The polishing resu...The effect of tert-butyl hydroperoxide-sodium pyrosulfite((CH3)3COOH-Na2S2O5)as an initiator system in H2O2-based slurry was investigated for the abrasive-free polishing(AFP)of a hard disk substrate.The polishing results show that the H_(2)O_(2)-C_(4)H_(10)O_(2)-Na_(2)S_(2)O_(5) slurry exhibits a material removal rate(MRR)that is nearly 5 times higher than that of the H2O2 slurry in the AFP of the hard disk substrate.In addition,the surface polished by the slurry containing the initiator exhibits a lower surface roughness and has fewer nano-asperity peaks than that of the H2O2 slurry.Further,we investigate the polishing mechanism of H_(2)O_(2)-C_(4)H_(10)O_(2)-Na_(2)S_(2)O_(5) slurry.Electron spin-resonance spectroscopy and auger electron spectrometer analyses show that the oxidizing ability of the H_(2)O_(2)-C_(4)H_(10)O_(2)-Na_(2)S_(2)O_(5) slurry is much greater than that of the H2O2 slurry.The results of potentiodynamic polarization measurements show that the hard disk substrate in the H_(2)O_(2)-C_(4)H_(10)O_(2)-Na_(2)S_(2)O_(5) slurry can be rapidly etched,and electrochemical impedance spectroscopy analysis indicates that the oxide film of the hard disk substrate formed in the H_(2)O_(2)-C_(4)H_(10)O_(2)-Na_(2)S_(2)O_(5) slurry may be loose,and can be removed easily during polishing.The better oxidizing and etching ability of H_(2)O_(2)-C_(4)H_(10)O_(2)-Na_(2)S_(2)O_(5) slurry leads to a higher MRR in AFP for hard disk substrates.展开更多
基金supported by the National Natural Science Foundation of China(Grant No.51175317)Research Fund for the Doctoral Program of Higher Education of China(Grant No.20123108110016)Tribology Science Fund of State Key Laboratory of Tribology(No.SKLTKF11B06).
文摘The effect of tert-butyl hydroperoxide-sodium pyrosulfite((CH3)3COOH-Na2S2O5)as an initiator system in H2O2-based slurry was investigated for the abrasive-free polishing(AFP)of a hard disk substrate.The polishing results show that the H_(2)O_(2)-C_(4)H_(10)O_(2)-Na_(2)S_(2)O_(5) slurry exhibits a material removal rate(MRR)that is nearly 5 times higher than that of the H2O2 slurry in the AFP of the hard disk substrate.In addition,the surface polished by the slurry containing the initiator exhibits a lower surface roughness and has fewer nano-asperity peaks than that of the H2O2 slurry.Further,we investigate the polishing mechanism of H_(2)O_(2)-C_(4)H_(10)O_(2)-Na_(2)S_(2)O_(5) slurry.Electron spin-resonance spectroscopy and auger electron spectrometer analyses show that the oxidizing ability of the H_(2)O_(2)-C_(4)H_(10)O_(2)-Na_(2)S_(2)O_(5) slurry is much greater than that of the H2O2 slurry.The results of potentiodynamic polarization measurements show that the hard disk substrate in the H_(2)O_(2)-C_(4)H_(10)O_(2)-Na_(2)S_(2)O_(5) slurry can be rapidly etched,and electrochemical impedance spectroscopy analysis indicates that the oxide film of the hard disk substrate formed in the H_(2)O_(2)-C_(4)H_(10)O_(2)-Na_(2)S_(2)O_(5) slurry may be loose,and can be removed easily during polishing.The better oxidizing and etching ability of H_(2)O_(2)-C_(4)H_(10)O_(2)-Na_(2)S_(2)O_(5) slurry leads to a higher MRR in AFP for hard disk substrates.
