An AgGeSbTe thin film is proposed as a negative heat-mode resist for dry lithography.It possesses high etching selectivity with the etching rate difference of as high as 62 nm/min in CHF_(3)/O_(2)mixed gases.The etche...An AgGeSbTe thin film is proposed as a negative heat-mode resist for dry lithography.It possesses high etching selectivity with the etching rate difference of as high as 62 nm/min in CHF_(3)/O_(2)mixed gases.The etched sidewall is steep without the obvious lateral corrosion.The lithographic characteristics and underlying physical mechanisms are analyzed.Besides,results of X-ray diffraction,Raman spectroscopy,and X-ray photoelectron spectroscopy further indicate that laser irradiation causes the formation of Ge,Sb,and AgTe crystals,which is the basis of etching selectivity.In addition,the etching selectivity of Si to AgGeS_(b)Te resist is as high as 19 at SF_(6)/Ar mixed gases,possessing good etching resistance.It is believed that the AgGeSbTe thin film is a promising heat-mode resist for dry lithography.展开更多
A Te-free binary phase change material Sb Bi is proposed as a new inorganic photoresist for heat-mode lithography. It shows good film-forming ability(surface roughness <1 nm), low threshold power for crystallizatio...A Te-free binary phase change material Sb Bi is proposed as a new inorganic photoresist for heat-mode lithography. It shows good film-forming ability(surface roughness <1 nm), low threshold power for crystallization(2 m W), and high etching selectivity(15:1). Line-type, dot-type, and complex pattern structures with the smallest feature size of 275 nm are fabricated on Sb Bi thin films using a 405 nm diode laser direct writing system. In addition, the excellent grating structures with a period of 0.8 μm demonstrate that thermal interference does not affect the adjacent microstructures obviously. These results indicate that Sb Bi is a promising laser heat-mode resist material for micro/nanostructure fabrication.展开更多
基金The work was supported by the National Natural Science Foundation of China(Nos.21773291,61904118,and 22002102)Natural Science Foundation of Jiangsu Province(Nos.BK20190935 and BK20190947)+1 种基金Natural Science Foundation of the Jiangsu Higher Education Institutions of China(No.19KJA210005)Jiangsu Key Laboratory for Environment Functional Materials.
文摘An AgGeSbTe thin film is proposed as a negative heat-mode resist for dry lithography.It possesses high etching selectivity with the etching rate difference of as high as 62 nm/min in CHF_(3)/O_(2)mixed gases.The etched sidewall is steep without the obvious lateral corrosion.The lithographic characteristics and underlying physical mechanisms are analyzed.Besides,results of X-ray diffraction,Raman spectroscopy,and X-ray photoelectron spectroscopy further indicate that laser irradiation causes the formation of Ge,Sb,and AgTe crystals,which is the basis of etching selectivity.In addition,the etching selectivity of Si to AgGeS_(b)Te resist is as high as 19 at SF_(6)/Ar mixed gases,possessing good etching resistance.It is believed that the AgGeSbTe thin film is a promising heat-mode resist for dry lithography.
基金partially supported by the National Natural Science Foundation of China(Nos.51672292and 61627826)the International Science&Technology Cooperation Program of China:Intergovernmental International Cooperation Program in Science and Technology Innovation(No.2016YFE0110600)the International Science&Technology Cooperation Program of Shanghai(No.16520710500)
文摘A Te-free binary phase change material Sb Bi is proposed as a new inorganic photoresist for heat-mode lithography. It shows good film-forming ability(surface roughness <1 nm), low threshold power for crystallization(2 m W), and high etching selectivity(15:1). Line-type, dot-type, and complex pattern structures with the smallest feature size of 275 nm are fabricated on Sb Bi thin films using a 405 nm diode laser direct writing system. In addition, the excellent grating structures with a period of 0.8 μm demonstrate that thermal interference does not affect the adjacent microstructures obviously. These results indicate that Sb Bi is a promising laser heat-mode resist material for micro/nanostructure fabrication.
