The plasmonic property of heavily doped p-type silicon is studied here.Although most of the plasmonic devices use metal-insulator-metal(MIM)waveguide in order to support the propagation of surface plasmon polaritons(S...The plasmonic property of heavily doped p-type silicon is studied here.Although most of the plasmonic devices use metal-insulator-metal(MIM)waveguide in order to support the propagation of surface plasmon polaritons(SPPs),metals that possess a number of challenges in loss management,polarization response,nanofabrication etc.On the other hand,heavily doped p-type silicon shows similar plasmonic properties like metals and also enables us to overcome the challenges possessed by metals.For numerical simulation,heavily doped p-silicon is mathematically modeled and the theoretically obtained relative permittivity is compared with the experimental value.A waveguide is formed with the p-silicon-air interface instead of the metal-air interface.Formation and propagation of SPPs similar to MIM waveguides are observed.展开更多
Due to ineffectiveness of routine IR-absorption method for determinahon of intershtial oxygen in heavily doped silicon, a 'peak-height' method has been dcveloped. The phosphorus-doped CZ-Si with n=(7.l～l2)...Due to ineffectiveness of routine IR-absorption method for determinahon of intershtial oxygen in heavily doped silicon, a 'peak-height' method has been dcveloped. The phosphorus-doped CZ-Si with n=(7.l～l2)× 10~17cm^(-3) was taken as sample for characterization. The calculation results at 300 K and 10 K were ptesented in detail. The'peak-height' method is much simpler than 'short-baseline' and 'curved-baseline' methods.展开更多
The anodic voltammetric curves of heavily doped n-Si in HF solution, on which three different regions have emerged, and were plotted, A porous silicon layer with fine morphology was formed in linear region.
We perform systematic thermal conductivity measurements on heavily hole-doped Ba1-xKxFe2As2 single crystals with 0.747 ≤ x ≤ 0.974. At x=0.747, the K0/T is negligible, indicating a nodeless superconducting gap. A sm...We perform systematic thermal conductivity measurements on heavily hole-doped Ba1-xKxFe2As2 single crystals with 0.747 ≤ x ≤ 0.974. At x=0.747, the K0/T is negligible, indicating a nodeless superconducting gap. A small residual linear term K0/T （=0.035 m W.K-2 cm-1） appears at xz0.826, and it increases slowly up to x=0.974, followed by a substantial increase of more than 20 times to of K0/T clearly shows that the nodal gap appears near x surface topology. The small values of K0/T from x=0.826 the pure KFe2As2 （x=1.0）. This doping dependence = 0.8, possibly associated with the change of Fermi to 0.974 are consistent with the Y-shaped nodal s- wave gap recently revealed by angle-resolved photoemission spectroscopy experiments at x=0.9. Furthermore, the substantial increase of K0/T from x=0.974 to 1.0 is inconsistent with a symmetry-imposed d-wave gap in KFe2 As2, and a possible nodal gap structure in KFe2As2 is discussed.展开更多
文摘The plasmonic property of heavily doped p-type silicon is studied here.Although most of the plasmonic devices use metal-insulator-metal(MIM)waveguide in order to support the propagation of surface plasmon polaritons(SPPs),metals that possess a number of challenges in loss management,polarization response,nanofabrication etc.On the other hand,heavily doped p-type silicon shows similar plasmonic properties like metals and also enables us to overcome the challenges possessed by metals.For numerical simulation,heavily doped p-silicon is mathematically modeled and the theoretically obtained relative permittivity is compared with the experimental value.A waveguide is formed with the p-silicon-air interface instead of the metal-air interface.Formation and propagation of SPPs similar to MIM waveguides are observed.
文摘Due to ineffectiveness of routine IR-absorption method for determinahon of intershtial oxygen in heavily doped silicon, a 'peak-height' method has been dcveloped. The phosphorus-doped CZ-Si with n=(7.l～l2)× 10~17cm^(-3) was taken as sample for characterization. The calculation results at 300 K and 10 K were ptesented in detail. The'peak-height' method is much simpler than 'short-baseline' and 'curved-baseline' methods.
文摘The anodic voltammetric curves of heavily doped n-Si in HF solution, on which three different regions have emerged, and were plotted, A porous silicon layer with fine morphology was formed in linear region.
基金Supported by the National Basic Research Program under Grant Nos 2012CB821402 and 2015CB921401the National Natural Science Foundation of China+1 种基金the Program for Professor of Special Appointment(Eastern Scholar)at Shanghai Institutions of Higher LearningSTCSM of China(No 15XD1500200)
文摘We perform systematic thermal conductivity measurements on heavily hole-doped Ba1-xKxFe2As2 single crystals with 0.747 ≤ x ≤ 0.974. At x=0.747, the K0/T is negligible, indicating a nodeless superconducting gap. A small residual linear term K0/T （=0.035 m W.K-2 cm-1） appears at xz0.826, and it increases slowly up to x=0.974, followed by a substantial increase of more than 20 times to of K0/T clearly shows that the nodal gap appears near x surface topology. The small values of K0/T from x=0.826 the pure KFe2As2 （x=1.0）. This doping dependence = 0.8, possibly associated with the change of Fermi to 0.974 are consistent with the Y-shaped nodal s- wave gap recently revealed by angle-resolved photoemission spectroscopy experiments at x=0.9. Furthermore, the substantial increase of K0/T from x=0.974 to 1.0 is inconsistent with a symmetry-imposed d-wave gap in KFe2 As2, and a possible nodal gap structure in KFe2As2 is discussed.
