Relativistic Heavy Ion Collider and the Large Hadron Collider for Heavy Ion Fusion

Heavy Ion Fusion makes use of the Relativistic Heavy Ion Collider at Brookhaven National Lab and the Large Hadron Collider in Geneva, Switzerland for Inertial Confinement Fusion. Two Storage Rings, which may or may not initially be needed, added to each of the Colliders increases the intensity of the Heavy Ion Beams making it comparable to the Total Energy delivered to the DT target by the National Ignition Facility at the Lawrence Livermore Lab. The basic Physics involved gives Heavy Ion Fusion an advantage over Laser Fusion because heavy ions have greater penetration power than photons. The Relativistic Heavy Ion Collider can be used as a Prototype Heavy Ion Fusion Reactor for the Large Hadron Collider.

Heavy ion energy influence on multiple-cell upsets in small sensitive volumes:from standard to high energies

The 28 nm process has a high cost-performance ratio and has gradually become the standard for the field of radiation-hardened devices.However,owing to the minimum physical gate length of only 35 nm,the physical area of a standard 6T SRAM unit is approximately 0.16μm^(2),resulting in a significant enhancement of multi-cell charge-sharing effects.Multiple-cell upsets(MCUs)have become the primary physical mechanism behind single-event upsets(SEUs)in advanced nanometer node devices.The range of ionization track effects increases with higher ion energies,and spacecraft in orbit primarily experience SEUs caused by high-energy ions.However,ground accelerator experiments have mainly obtained low-energy ion irradiation data.Therefore,the impact of ion energy on the SEU cross section,charge collection mechanisms,and MCU patterns and quantities in advanced nanometer devices remains unclear.In this study,based on the experimental platform of the Heavy Ion Research Facility in Lanzhou,low-and high-energy heavy-ion beams were used to study the SEUs of 28 nm SRAM devices.The influence of ion energy on the charge collection processes of small-sensitive-volume devices,MCU patterns,and upset cross sections was obtained,and the applicable range of the inverse cosine law was clarified.The findings of this study are an important guide for the accurate evaluation of SEUs in advanced nanometer devices and for the development of radiation-hardening techniques.

Uniformity Control of Scanned Beam in 300 MeV Proton and Heavy Ion Accelerator Complex at SESRI

In recent years,heavy ion accelerator technology has been rapidly developing worldwide and widely applied in the fields of space radiation simulation and particle therapy.Usually,a very high uniformity in the irradiation area is required for the extracted ion beams,which is crucial because it directly affects the experimental precision and therapeutic effect.Specifically,ultra-large-area and high-uniformity scanning are crucial requirements for spacecraft radiation effects assessment and serve as core specification for beamline terminal design.In the 300 MeV proton and heavy ion accelerator complex at the Space Environment Simulation and Research Infrastructure(SESRI),proton and heavy ion beams will be accelerated and ultimately delivered to three irradiation terminals.In order to achieve the required large irradiation area of 320 mm×320 mm,horizontal and vertical scanning magnets are used in the extraction beam line.However,considering the various requirements for beam species and energies,the tracking accuracy of power supplies(PSs),the eddy current effect of scanning magnets,and the fluctuation of ion bunch structure will reduce the irradiation uniformity.To mitigate these effects,a beam uniformity optimization method based on the measured beam distribution was proposed and applied in the accelerator complex at SESRI.In the experiment,the uniformity is successfully optimized from 75%to over 90%after five iterations of adjustment to the PS waveforms.In this paper,the method and experimental results were introduced.

Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation

Experiments and simulation studies on 283 MeV I ion induced single event effects of silicon carbide(SiC) metal–oxide–semiconductor field-effect transistors(MOSFETs) were carried out. When the cumulative irradiation fluence of the SiC MOSFET reached 5×10^(6)ion·cm^(-2), the drain–gate channel current increased under 200 V drain voltage, the drain–gate channel current and the drain–source channel current increased under 350 V drain voltage. The device occurred single event burnout under 800 V drain voltage, resulting in a complete loss of breakdown voltage. Combined with emission microscope, scanning electron microscope and focused ion beam analysis, the device with increased drain–gate channel current and drain–source channel current was found to have drain–gate channel current leakage point and local source metal melt, and the device with single event burnout was found to have local melting of its gate, source, epitaxial layer and substrate. Combining with Monte Carlo simulation and TCAD electrothermal simulation, it was found that the initial area of single event burnout might occur at the source–gate corner or the substrate–epitaxial interface, electric field and current density both affected the lattice temperature peak. The excessive lattice temperature during the irradiation process appeared at the local source contact, which led to the drain–source channel damage. And the excessive electric field appeared in the gate oxide layer, resulting in drain–gate channel damage.

Effect of temperature on heavy ion-induced single event transient on 16-nm FinFET inverter chains

The variations of single event transient(SET)pulse width of high-LET heavy ion irradiation in 16-nm-thick bulk silicon fin field-effect transistor(Fin FET)inverter chains with different driven strengths are measured at different temperatures.Three-dimensional(3D)technology computer-aided design simulations are carried out to study the SET pulse width and saturation current varying with temperature.Experimental and simulation results indicate that the increase in temperature will enhance the parasitic bipolar effect of bulk Fin FET technology,resulting in the increase of SET pulse width.On the other hand,the increase of inverter driven strength will change the layout topology,which has a complex influence on the SET temperature effects of Fin FET inverter chains.The experimental and simulation results show that the device with the strongest driven strength has the least dependence on temperature.

Investigation of heavy ion irradiation effects on a charge trapping memory capacitor by C-V measurement

Heavy ion irradiation effects on charge trapping memory(CTM)capacitors with TiN/Al_(2)O_(3)/HfO_(2)/Al_(2)O_(3)/HfO_(2)/SiO_(2)/p-Si structure have been investigated.The ion-induced interface charges and oxide trap charges were calculated and analyzed by capacitance-voltage(C-V)characteristics.The C-V curves shift towards the negative direction after swift heavy ion irradiation,due to the net positive charges accumulating in the trapping layer.The memory window decreases with the increase of ion fluence at high voltage,which results from heavy ion-induced structural damage in the blocking layer.The mechanism of heavy ion irradiation effects on CTM capacitors is discussed in detail with energy band diagrams.The results may help to better understand the physical mechanism of heavy ion-induced degradation of CTM capacitors.

Fuel compression in the magnetized cylindrical implosion driven by a gold tube heated by heavy ion beams

A magnetized cylindrical target composed of a gold tube filled with deuterium-tritium fuel plasma at low density is studied numerically in the present paper.A shock wave is produced when a heavy ion beam heats the gold along the direction of the magnetic field.The density peak of the shock wave increases with the increase in time and it propagates in the-r direction in the cylindrical tube.It seems that this wave is the supermagnetosonic wave.It is found that the Mach number M is between 6.96 and 19.19.The density peak of the shock wave increases as the intensity of the heavy ion beam increases.Furthermore,the density peak of the shock wave increases as the external magnetic field increases.

Heavy ion induced upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memory

Upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memory induced by accelerated ^（129）Xe and ^（209）Bi ions are investigated in detail. The linear energy transfer covers the range from 50 to 99.8 Me V/（mg/cm^2）. When the memory chips are powered off during heavy ions irradiation, single-event-latch-up and single-event-function-interruption are excluded,and only 0-〉1 upset errors in the memory array are observed. These error bit rates seem very difficult to achieve and cannot be simply recovered based on the power cycle. The number of error bits shows a strong dependence on the linear energy transfer（LET）. Under room-temperature annealing conditions, the upset errors can be reduced by about two orders of magnitude using rewrite/reprogram operations, but they subsequently increase once again in a few minutes after the power cycle. High-temperature annealing can diminish almost all error bits, which are affected by the lower LET ^（129）Xe ions. The percolation path between the floating-gate（FG） and the substrate contributes to the radiation-induced leakage current, and has been identified as the root cause of the upset errors of the Flash memory array in this work.

Heavy ion and X-ray irradiation alter the cytoskeleton and cytomechanics of cortical neurons

Heavy ion beams with high linear energy transfer exhibit more beneifcial physical and biological performance than conventional X-rays, thus improving the potential of this type of radiotherapy in the treatment of cancer. However, these two radiotherapy modalities both cause inevitable brain injury. The objective of this study was to evaluate the effects of heavy ion and X-ray irra-diation on the cytoskeleton and cytomechanical properties of rat cortical neurons, as well as to determine the potential mechanism of neuronal injury after irradiation. Cortical neurons from 30 new-born mice were irradiated with heavy ion beams at a single dose of 2 Gy and X-rays at a single dose of 4 Gy;subsequent evaluation of their effects were carried out at 24 hours after irradiation. An immunolfuorescence assay showed that after irradiation with both the heavy ion beam and X-rays, the number of primary neurons was signiifcantly decreased, and there was ev-idence of apoptosis. Radiation-induced neuronal injury was more apparent after X-irradiation. Under atomic force microscopy, the neuronal membrane appeared rough and neuronal rigidity had increased. These cell changes were more apparent following exposure to X-rays. Our ifnd-ings indicated that damage caused by heavy ion and X-ray irradiation resulted in the structural distortion and rearrangement of the cytoskeleton, and affected the cytomechanical properties of the cortical neurons. Moreover, this radiation injury to normal neurons was much severer after irradiation with X-rays than after heavy ion beam irradiation.

Influence of heavy ion irradiation on DC and gate-lag performance of AlGaN/GaN HEMTs

AlGaN/GaN high electron mobility transistors （HEMTs） were irradiated by 256 MeV 127I ions with a fluence up to 1 × 10^10 ions/cm2 at the HI-13 heavy ion accelerator of the China Institute of Atomic Energy. Both the drain current ld and the gate current Ig increased in off-state during irradiation. Post-irradiation measurement results show that the device output, transfer, and gate characteristics changed significantly. The saturation drain current, reverse gate leakage current, and the gate-lag all increased dramatically. By photo emission microscopy, electroluminescence hot spots were found in the gate area. All of the parameters were retested after one day and after one week, and no obvious annealing effect was observed under a temperature of 300 K. Further analysis demonstrates that swift heavy ions produced latent tracks along the ion trajectories through the hetero-junction. Radiation-induced defects in the latent tracks decreased the charges in the two-dimensional electron gas and reduced the carrier mobility, degrading device performance.

Laser ion source for heavy ion inertial fusion

The proposed heavy ion inertial fusion(HIF)scenarios require ampere class low charge state ion beams of heavy species.The laser ion source(LIS)is recognized as one of the promising candidates of ion beam providers,since it can deliver high brightness heavy ion beams to accelerators.The design of LIS for the HIF depends on the accelerator structure and accelerator complex following the source.In this article,we discuss the specifications and design of an appropriate LIS assuming two major types of the accelerators:radio frequency(RF)high quality factor cavity type and non-resonant induction core type.We believe that a properly designed LIS would satisfy the requirements of both types,while some issues need to be verified experimentally.

Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation

The degradations in NPN silicon-germanium （SiGe） heterojunction bipolar transistors （HBTs） were fully studied in this work, by means of 25-MeV Si, 10-MeV C1, 20-MeV Br, and 10-MeV Br ion irradiation, respectively. Electrical parameters such as the base current （IB）, current gain （β）, neutral base recombination （NBR）, and Early voltage （VA） were investigated and used to evaluate the tolerance to heavy ion irradiation. Experimental results demonstrate that device degradations are indeed radiation-source-dependent, and the larger the ion nuclear energy loss is, the more the displacement damages are, and thereby the more serious the performance degradation is. The maximum degradation was observed in the transistors irradiated by 10-MeV Br. For 20-MeV and 10-MeV Br ion irradiation, an unexpected degradation in Ic was observed and Early voltage decreased with increasing ion fluence, and NBR appeared to slow down at high ion fluence. The degradations in SiGe HBTs were mainly attributed to the displacement damages created by heavy ion irradiation in the transistors. The underlying physical mechanisms are analyzed and investigated in detail.

Degradation of β-Ga_(2)O_(3) Schottky barrier diode under swift heavy ion irradiation

The electrical characteristics and microstructures ofβ-Ga_(2)O_(3) Schottky barrier diode(SBD)devices irradiated with swift heavy ions(2096 MeV Ta ions)have been studied.It was found thatβ-Ga_(2)O_(3) SBD devices showed the reliability degradation after irradiation,including turn-on voltage Von,on-resistance Ron,ideality factor n,and the reverse leakage current density Jr.In addition,the carrier concentration of the drift layer was decreased significantly and the calculated carrier removal rates were 5×10^(6)-1.3×10^(7)cm^(-1).Latent tracks induced by swift heavy ions were observed visually in the wholeβ-Ga2O3 matrix.Furthermore,crystal structure of tracks was amorphized completely.The latent tracks induced by Ta ions bombardments were found to be the reason for the decrease in carrier mobility and carrier concentration.Eventually,these defects caused the degradation of electrical characteristics of the devices.In terms of the carrier removal rates,theβ-Ga_(2)O_(3) SBD devices were more sensitive to swift heavy ions irradiation than SiC and GaN devices.

Heavy ion‑induced MCUs in 28nm SRAM‑based FPGAs:upset proportions,classifications,and pattern shapes

For modern scaling devices,multiple cell upsets(MCUs)have become a major threat to high-reliability field-programmable gate array(FPGA)-based systems.Thus,both performing the worst-case irradiation tests to provide the actual MCU response of devices and proposing an effective MCU distinction method are urgently needed.In this study,high-and medium-energy heavy-ion irradiations for the configuration random-access memory of 28 nm FPGAs are performed.An MCU extraction method supported by theoretical predictions is proposed to study the MCU sizes,shapes,and frequencies in detail.Based on the extraction method,the different percentages,and orientations of the large MCUs in both the azimuth and zenith directions determine the worse irradiation response of the FPGAs.The extracted largest 9-bit MCUs indicate that high-energy heavy ions can induce more severe failures than medium-energy ones.The results show that both the use of high-energy heavy ions during MCU evaluations and effective protection for the application of high-density 28 nm FPGAs in space are extremely necessary.

Impact of the displacement damage in channel and source/drain regions on the DC characteristics degradation in deep-submicron MOSFETs after heavy ion irradiation

This paper mainly reports the permanent impact of displacement damage induced by heavy-ion strikes on the deepsubmicron MOSFETs. Upon the heavy ion track through the device, it can lead to displacement damage, including the vacancies and the interstitials. As the featured size of device scales down, the damage can change the dopant distribution in the channel and source/drain regions through the generation of radiation-induced defects and thus have significant impacts on their electrical characteristics. The measured results show that the radiation-induced damage can cause DC characteristics degradations including the threshold voltage, subthreshold swing, saturation drain current, transconductanee, etc. The radiation-induced displacement damage may become the dominant issue while it was the secondary concern for the traditional devices after the heavy ion irradiation. The samples are also irradiated by Co- 60 gamma ray for comparison with the heavy ion irradiation results. Corresponding explanations and analysis are discussed.

Reconstruction of fission events in heavy ion reactions with the compact spectrometer for heavy ion experiment

We report a reconstruction method for fast-fission events in 25 MeV/u^(86)Kr +^(208)Pb reactions at the Compact Spectrometer for Heavy Ion Experiment(CSHINE). The fission fragments(FFs) are measured using three large-area parallel-plate avalanche counters, which can deliver the position and arrival timing information of the fragments. The start timing information is provided by the radio frequency of the cyclotron. Fission events were reconstructed using the velocities of the two FFs. The broadening of both the velocity distribution and azimuthal difference of the FFs decreases with the folding angle, in accordance with the picture that fast fission occurs. The anisotropic angular distribution of the fission axis also consistently reveals the dynamic features of fission events.

Heavy Ion and Laser Microbeam Induced Current Transients in SiGe Heterojunction Bipolar Transistor

Silicon-germanium （SiGe） hereto-junction bipolar transistor current transients induced by pulse laser and heavy iron are measured using a real-time digital oscilloscope. These transients induced by pulse laser and heavy iron exhibit the same waveform and charge collection time except for the amplitude of peak current. Different laser energies and voltage biases under heavy ion irradiation also have impact on current transient, whereas the waveform remains unchanged. The position-correlated current transients suggest that the nature of the current transient is controlled by the behavior of the C/S junction.

Differential Proteomics Reveals the Potential Injury Mechanism Induced by Heavy Ion Radiation in Mice Ovaries

In the present study, we used a proteomics approach based on a two-dimensional electrophoresis （2-DE） reference map to investigate protein expression in the ovarian tissues of pubertal Swiss-Webster mice subjected to carbon ion radiation （CIR）. Among the identified proteins, ubiquitin carboxy-terminal hydrolase L1 （UCH-L1） is associated with the cell cycle[1] and that it influences proliferation in ovarian tissues. We analyzed the expression of UCH-L1 and the proliferation marker proliferation cell nuclear antigen （PCNA） following CIR using immunoblotting and immunofluorescence. The proteomics and biochemical results provide insight into the underlying mechanisms of CIR toxicity in ovarian tissues.

Raman spectrum study of graphite irradiated by swift heavy ions

Highly oriented pyrolytic graphites are irradiated with 40.5-Me V and 67.7-Me V ^112Sn-ions in a wide range of fluences： 1×10^11 ions/cm^2–1×10^14ions/cm^2. Raman spectra in the region between 1200 cm^-1 and 3500cm^-1 show that the disorder induced by Sn-ions increases with ion fluence increasing. However, for the same fluence, the amount of disorder is greater for 40.5-Me V Sn-ions than that observed for 67.7-Me V Sn-ions, even though the latter has a slightly higher value for electronic energy loss. This is explained by the ion velocity effect. Importantly, ～ 3-cm^-1frequency shift toward lower wavenumber for the D band and ～ 6-cm^-1 shift toward lower wavenumber for the 2D band are observed at a fluence of 1×10^14 ions/cm^2, which is consistent with the scenario of radiation-induced strain. The strain formation is interpreted in the context of inelastic thermal spike model, and the change of the 2D band shape at high ion fluence is explained by the accumulation of stacking faults of the graphene layers activated by radiation-induced strain around ion tracks. Moreover,the hexagonal structure around the ion tracks is observed by scanning tunneling microscopy, which confirms that the strains near the ion tracks locally cause electronic decoupling of neighboring graphene layers.

Irradiation effects of graphene and thin layer graphite induced by swift heavy ions

Graphene and thin graphite films deposited on SiO2/Si are irradiated by swift heavy ions(209Bi, 9.5 Me V/u) with the fluences in a range of 1011ions/cm2–1012ions/cm2 at room temperature. Both pristine and irradiated samples are investigated by Raman spectroscopy. For pristine graphite films, the 'blue shift' of 2D bond and the 'red shift' of G bond with the decrease of thickness are found in the Raman spectra. For both irradiated graphene and thin graphite films, the disorder-induced D peak and D' peak are detected at the fluence above a threshold Φth. The thinner the film, the lower the Φthis. In this work, the graphite films thicker than 60 nm reveal defect free via the absence of a D bond signal under the swift heavy ion irradiation till the fluence of 2.6 × 1012ions/cm2. For graphite films thinner than 6 nm, the area ratios between D peak and G peak increase sharply with reducing film thickness. It concludes that it is much easier to induce defects in thinner films than in thicker ones by swift heavy ions. The intensities of the D peak and D' peak increase with increasing ion fluence, which predicts the continuous impacting of swift heavy ions can lead to the increasing of defects in samples. Different defect types are detected in graphite films of different thickness values. The main defect types are discussed via the various intensity ratios between the D peak and D' peak(HD/HD).