Faceting transitions in crystal growth and heteroepitaxial growth in the anisotropic phase-field crystal model

We modify the anisotropic phase-field crystal model （APFC）, and present a semi-implicit spectral method to numerically solve the dynamic equation of the APFC model. The process results in the acceleration of computations by orders of magnitude relative to the conventional explicit finite-difference scheme, thereby, allowing us to work on a large system and for a long time. The faceting transitions introduced by the increasing anisotropy in crystal growth are then discussed. In particular, we investigate the morphological evolution in heteroepitaxial growth of our model. A new formation mechanism of misfit dislocations caused by vacancy trapping is found. The regular array of misfit dislocations produces a small-angle grain boundary under the right conditions, and it could significantly change the growth orientation of epitaxial layers.

Insight into the synergistic effect of defect and strong interface coupling on ZnIn_(2)S_(4)/CoIn_(2)S_(4)heterostructure for boosting photocatalytic H_(2) evolution

Steering the directional carrier migration across the interface is a central mission for efficient photocatalytic reactions.In this work,an atomic-shared heterointerface is constructed between the defect-rich ZnIn_(2)S_(4)(HVs-ZIS)and CoIn_(2)S_(4)(CIS)via a defect-guided heteroepitaxial growth strategy.The strong interface coupling induces adequate carriers exchanging passageway between HVs-ZIS and CIS,enhancing the internal electric field(IEF)in the ZnIn_(2)S_(4)/CoIn_(2)S_(4)(HVs-ZIS/CIS)heterostructure.The defect structure in HVs-ZIS induces an additional defect level,improving the separation efficiency of photocarriers.Moreover,promoted by the IEF and intimate heterointerface,photogenerated electrons trapped by the defect level can migrate to the valence band of CIS,contributing to massive photogenerated electrons with intense reducibility in HVs-ZIS/CIS.Consequently,the HVs-ZIS/CIS heterostructure performs a boosted H_(2)evolution activity of 33.65 mmol g^(-1)h^(-1).This work highlights the synergistic effects of defect and strong interface coupling in regulating carrier transfer and paves a brave avenue for constructing efficient heterostructure photocatalysts.

Epitaxial growth of CsPbBr_(3)/PbS single-crystal film heterostructures for photodetection

Epitaxial high-crystallization film semiconductor heterostructures has been proved to be an effective method to prepare single-crystal films for different functional devices in modern microelectronics,electro-optics,and optoelectronics.With superior semiconducting properties,halide perovskite materials are rising as building blocks for heterostructures.Here,the conformal vapor phase epitaxy of CsPbBr3 on PbS single-crystal films is realized to form the CsPbBr3/PbS heterostructures via a two-step vapor deposition process.The structural characterization reveals that PbS substrates and the epilayer CsPbBr3 have clear relationships:CsPbBr3(110)//PbS(100),CsPbBr3[001]//PbS[001]and CsPbBr3[001]//PbS[010].The absorption and photoluminescence(PL)characteristics of CsPbBr3/PbS heterostructures show the broadband light absorption and efficient photogenerated carrier transfer.Photodetectors based on the heterostructures show superior photoresponsivity of 15 A/W,high detectivity of 2.65×10^(11) Jones,fast response speed of 96 ms and obvious rectification behavior.Our study offers a convenient method for establishing the high-quality CsPbBr3/PbS single-crystal film heterostructures and providing an effective way for their application in optoelectronic devices.

Interfacial stress characterization of GaN epitaxial layer with sapphire substrate by confocal Raman spectroscopy

As an important wide-bandgap semiconductor,gallium nitride(GaN)has attracted considerable attention.This paper describes the use of confocal Raman spectroscopy to characterize undoped GaN,n-type GaN,and p-type GaN through depth profiling using 405-,532-,and 638-nm wavelength lasers.The Raman signal intensity of the sapphire substrate at different focal depths is studied to analyze the depth resolution.Based on the shift of the E2 H mode of the GaN epitaxial layer,the interfacial stress for different types of GaN is characterized and calculated.The results show that the maximum interfacial stress appears approximately at the junction of the GaN and the sapphire substrate.Local interfacial stress analysis between the GaN epitaxial layer and the substrate will be very helpful in furthering the applications of GaN devices.

Kinetic Monte Carlo Simulation of Deposition of Co Thin Film on Cu(001)

A kinetic Monte Carlo （kMC） simulation is conducted to study the growth of ultrathin film of Co on Cu（001） surface. The many-body, tight-binding potential model is used in the simulation to represent the interatomic potential. The film morphology of heteroepitaxial Co film on a Cu（001） substrate at the transient and final state conditions with various incident energies is simulated. The Co covered area and the thickness of the film growth of the first two layers are investigated. The simulation results show that the incident energy influences the film growth and structure. There exists a transition energy where the interracial roughness is minimum. There are some void regions in the film in the final state, because of the influence of the island growth in the first few layers. In addition, there are deviations from ideal layer-by-layer growth at a coverage from 0 - 2 monolayers （ML）.

Flexible-on-rigid heteroepitaxial metal-organic frameworks induced by template lattice change

Hybrid-phase metal-organic frameworks(MOFs)are a class of intriguing heterostructures for diverse applications,the properties of which are governed by their chemical composition,framework topology,and morphology.Herein,we report the structural and morphological evolution of flexible MOFs induced by the lattice change of template during heteroepitaxial growth.We demonstrate that the epitaxially grown flexible Fe-MOFs can be varied from one structure to another to adapt to the lattice of the template Zr-MOFs.Thus,flexible Fe-MOFs with similar chemical compositions and topology can be epitaxially grown on different Zr-MOFs over huge lattice constant gradient.We also demonstrate that the morphology of the heterostructures is affected by the degree of lattice difference between the template MOFs and the epitaxial MOFs.The reported results could pave the way toward the rational design of hybrid-phase MOFs guided by the principles of reticular chemistry.

Vapor phase epitaxy of PbS single-crystal films on water-soluble substrates and application to photodetectors

Lead sulfide(PbS),a typical functional semiconductor material,has attracted serious attention due to its great potential in optoelectronics applications.However,controllable growth of PbS single-crystal film still remains a great challenge.Here,we report heteroepitaxial growth of large-scale highly crystalline PbS films on alkali salt(NaCl and KCl)substrates via chemical vapor deposition(CVD).Structural characterizations demonstrate that the as-grown PbS films exhibit an atomically sharp interface with the underlying substrates.The epitaxial relationships between the epilayers and substrates were determined to be PbS(100)//NaCl(100)or KCl(100),PbS[010]//NaCl[010]or KCl[010].Owing to the high solubility of alkali salt,the epitaxial PbS films can be rapidly released from the underlying substrates and transferred to other substrates of interest while maintaining good integrity and crystallinity,the process of which is particularly attractive in the fields of electronics and optoelectronics.Furthermore,photodetectors based on the transferred PbS films were fabricated,exhibiting a high photoresponsivity of 7.5 A/W,a detectivity of 1.44×10^(12)Jones,and a rapid response time of approximately 0.25 s.This work sheds light on the batch production,green transfer,and optoelectronic application of PbS films.

Multi-wafer 3C-SiC thin films grown on Si(100) in a vertical HWLPCVD reactor

We report the latest results of the 3C-SiC layer growth on Si（100）substrates by employing a novel home-made horizontal hot wall low pressure chemical vapour deposition（HWLPCVD）system with a rotating susceptor that was designed to support up to three 50 mm-diameter wafers.3C-SiC film properties of the intrawafer and the wafer-to-wafer,including crystalline morphologies and electronics,are characterized systematically. Intra-wafer layer thickness and sheet resistance uniformity（σ/mean）of～3.40%and～5.37%have been achieved in the 3×50 mm configuration.Within a run,the deviations of wafer-to-wafer thickness and sheet resistance are less than 4%and 4.24%,respectively.