The ternary alloy heterojunctions In<sub>x</sub>Ga<sub>1-x</sub>As/In<sub>x</sub>Al<sub>1-x</sub>As are important materialswhich have been widely used in microwave and p...The ternary alloy heterojunctions In<sub>x</sub>Ga<sub>1-x</sub>As/In<sub>x</sub>Al<sub>1-x</sub>As are important materialswhich have been widely used in microwave and photoelectric devices.The alloy hetero-junctions In<sub>x</sub>Ga<sub>1-x</sub>As/In<sub>x</sub>Al<sub>1-x</sub>As（x=0.3）have great potential use in high electron mobili-ty transistors（HEMTs）,heterostructure insulated-gate FFTs（HIGFETs）and resonant tun-neling diodes（RTDs）.When x rises to 0.53,In<sub>x</sub>Ga<sub>1-x</sub>As/In<sub>x</sub>Al<sub>1-x</sub>As can be widely used inthe high-speed electronic devices.The valence-band offset（the value of ΔE<sub>v</sub>展开更多
基金Project supported by the National Natural Science Foundation of Chinathe Industrial Department of Xiamen Photoelectron Company.
文摘The ternary alloy heterojunctions In<sub>x</sub>Ga<sub>1-x</sub>As/In<sub>x</sub>Al<sub>1-x</sub>As are important materialswhich have been widely used in microwave and photoelectric devices.The alloy hetero-junctions In<sub>x</sub>Ga<sub>1-x</sub>As/In<sub>x</sub>Al<sub>1-x</sub>As（x=0.3）have great potential use in high electron mobili-ty transistors（HEMTs）,heterostructure insulated-gate FFTs（HIGFETs）and resonant tun-neling diodes（RTDs）.When x rises to 0.53,In<sub>x</sub>Ga<sub>1-x</sub>As/In<sub>x</sub>Al<sub>1-x</sub>As can be widely used inthe high-speed electronic devices.The valence-band offset（the value of ΔE<sub>v</sub>
