Porous heterostructure of graphene/hexagonal boron nitride as an efficient electrocatalyst for hydrogen peroxide generation

Compared with the traditional heteroatom doping,employing heterostructure is a new modulating approach for carbon-based electrocatalysts.Herein,a facile ball milling-assisted route is proposed to synthesize porous carbon materials composed of abundant graphene/hexagonal boron nitride(G/h-BN)heterostructures.Metal Ni powder and nanoscale h-BN sheets are used as a catalytic substrate/hard template and“nucleation seed”for the formation of the heterostructure,respectively.As-prepared G/h-BN heterostructures exhibit enhanced electrocatalytic activity toward H_(2)O_(2) generation with 86%-95%selectivity at the range of 0.45-0.75 V versus reversible hydrogen electrode(RHE)and a positive onset potential of 0.79 versus RHE(defined at a ring current density of 0.3 mA cm^(-2))in the alkaline solution.In a flow cell,G/h-BN heterostructured electrocatalyst has a H_(2)O_(2) production rate of up to 762 mmol g_(catalyst)^(-1) h^(-1) and Faradaic efficiency of over 75%during 12 h testing,superior to the reported carbon-based electrocatalysts.The density functional theory simulation suggests that the B atoms at the interface of the G/h-BN heterostructure are the key active sites.This research provides a new route to activate carbon catalysts toward highly active and selective O_(2)-to-H_(2)O_(2) conversion.

High-Throughput Growth of Hexagonal Boron Nitride Film Using Porous-Structure Isolation Layer

Chemical vapor deposition is considered as the most hopeful method for the synthesis of large-area high-quality hexagonal boron nitride on the substrate of catalytic metal. However, the size the hexagonal boron nitride films are limited to the size of growth chamber, which indicates a lower production efficiency. In this paper, the utilization efficiency of growth chamber is highly improved by alternately stacking multiple pieces of Cu foils and carbon fiber surface felt with porous structure. Uniform and continuous hexagonal boron nitride films are prepared on Cu foils through chemical vapor deposition utilizing ammonia borane as the precursor. This work develops a simple and practicable method for high-throughput preparation of hexagonal boron nitride films, which could contribute to the industrial application of hexagonal boron nitride. .

Replacement of Flake Graphite in Aluminacarbon Refractories by Hexagonal Boron Nitride

Three kinds of composite alumina refractories were prepared with tabular alumina （3-1 and 1-0 mm） as aggregates,tabular alumina powder,α-Al2 O3 micropowder,and Si powder as matrix,adding 3 mass％ hexagonal boron nitride （h-BN）,3 mass％ flake graphite and 10 mass％ flake graphite,respectively.Cold physical properties,hot modulus of rupture,oxidation resistance,thermal shock resistance and slag corrosion resistance of the specimens were compared.The results show that：（1） physical properties and hot modulus of rupture of Al2 O3-h-BN refractories are slightly different from those of low carbon Al2 O3-C refractories,but better than those of traditional Al2 O3-C refractories with 10 mass％ graphite ; （2） Al2 O3-h-BN refractories have better thermal shock resistance and oxidation resistance than the carbon containing refractories,while similar slag resistance with low carbon Al2 O3-C refractories ; （3） h-BN can replace flake graphite as a starting material for the preparation of composite alumina refractories,considering the overall properties of the material.

Hexagonal boron nitride adsorbent: Synthesis, performance tailoring and applications

Hexagonal boron nitride(h-BN),with unique structural and properties,has shown enormous potentitoward variety of possible applications.By virtue of partially-ionic character of BN chemical bonds anusually large specific surface area,h-BN-related nanostructures exhibit appealing adsorption propertiewhich can be widely applied for separation and purification towards energy and environment treatmenIn this review,recent progress in designing h-BN micro,nano-structure,controlled synthesis,performancoptimizing as well as energy and environment-related adsorption applications are summarized.Strategieto tailor the h-BN can be classified as morphology control,element doping,defect control and surfacmodification,focusing on how to optimize the adsorption performance.In order to insight the intrinsimechanism of tuning strategies for property optimization,the significant adsorption applications of h-Btowards hydrogen storage,CO2 capture,pollutants removal from water and adsorption desulfurization arpresented.

N-hydroxyphthalimide anchored on hexagonal boron nitride as a metal-free heterogeneous catalyst for deep oxidative desulfurization

A metal-free N-hydroxyphthalimide/hexagonal boron nitride(NHPI/h-BN)catalytic system was developed for deep oxidative desulfurization(ODS)of fuel oils.Detailed experiments find that the heterogenization process of loading NHPI on h-BN not only benefits to the dispersion and utilization of NHPI,but also can significantly promote the catalytic performance.By employing NHPI/h-BN as the catalyst,azodiisobutyronitrile(AIBN)as the metal-free initiator,a 95%conversion of dibenzothiophene(DBT)can be acquired under the reaction conditions of 120°C and atmospheric pressure with molecular oxygen(O_(2))as oxidant.Moreover,the heterogenization is convenient for the regeneration of the catalyst with>94%DBT conversion after being recycled seven times.Characterizations illustrate that the promoted catalytic activity along with the regenerability originate from the interactions between NHPI and h-BN.The catalytic mechanism study shows that molecular oxygen is readily activated by the NHPI/h-BN to form a superoxide radical(O_(2)^(·-)),which oxidize DBT to DBTO2 for desulfurization.

Vibration of two-dimensional hexagonal boron nitride

The dynamic behavior of two-dimensional nanostructures is important to the future application of nano devices. The vibrational behaviors of single-layered hexagonal boron nitride(h-BN) are studied by molecular dynamics simulation and continuum plate model. The bending stiffness and Poisson’s ratios of h-BN along zigzag direction and armchair direction are calculated. H-BN is softer compared with graphene. The continuum plate model can predict the vibration of h-BN with four edge-clamped boundary conditions well. The electric fields in different directions have obvious influence on the vibration of h-BN. The natural frequency of h-BN changes linearly with the electric field intensity along the polarization direction. The natural frequency of h-BN decreases with the increase of electric field intensity along both positive and negative nonpolarization direction. While the natural frequency of h-BN increases with the increase of electric field intensity along both positive and negative transverse electric field.

Deposition of hexagonal boron nitride thin films on silver nanoparticle substrates and surface enhanced infrared absorption

Silver nanoparticle thin films with different average particle diameters are grown on silicon substrates. Boron nitride thin films are then deposited on the silver nanoparticle interlayers by radio frequency （RF） magnetron sputtering. The boron nitride thin films are characterized by Fourier transform infrared spectra. The average particle diameters of silver nanoparticle thin films are 126.6, 78.4, and 178.8 nm. The results show that the sizes of the silver nanoparticles have effects on the intensities of infrared spectra of boron nitride thin films. An enhanced infrared absorption is detected for boron nitride thin film grown on silver nanoparticle thin film. This result is helpful to study the growth mechanism of boron nitride thin film.

Optical properties of hexagonal boron nitride thin films deposited by radio frequency bias magnetron sputtering

The optical properties of hexagonal boron nitride （h-BN） thin films were studied in this paper. The films were characterized by Fourier transform infrared spectroscopy, UV-visible transmittance and reflection spectra, h-BN thin films with a wide optical band gap Eg （5.86 eV for the as-deposited film and 5.97 eV for the annealed film） approaching h-BN single crystal were successfully prepared by radio frequency （RF） bias magnetron sputtering and post-deposition annealing at 970 K. The optical absorption behaviour of h-BN films accords with the typical optical absorption characteristics of amorphous materials when fitting is made by the Urbach tail model. The annealed film shows satisfactory structure stability. However, high temperature still has a significant effect on the optical absorption properties, refractive index n, and optical conductivity σ of h-BN thin films. The blue-shift of the optical absorption edge and the increase of Eg probably result from stress relaxation in the film under high temperatures. In addition, it is found that the refractive index clearly exhibits different trends in the visible and ultraviolet regions. Previous calculational results of optical conductivity of h-BN films are confirmed in our experimental results.

Ultrafast battery heat dissipation enabled by highly ordered and interconnected hexagonal boron nitride thermal conductive composites

Heat dissipation involved safety issues are crucial for industrial applications of the high-energy density battery and fast charging technology.While traditional air or liquid cooling methods suffering from space limitation and possible leakage of electricity during charge process,emerging phase change materials as solid cooling media are of growing interest.Among them,paraffin wax(PW)with large latent heat capacity and low cost is desirable for heat dissipation and thermal management which mainly hindered by their relatively low thermal conductivity and susceptibility to leakage.Here,highly ordered and interconnected hexagonal boron nitride(h-BN)networks were established via ice template method and introduced into PW to enhance the thermal conductivity.The composite with 20 wt%loading amount of h-BN can guarantee a highly ordered network and exhibited high thermal conductivity(1.86 W m^(-1) K^(-1))which was 4 times larger compared with that of random dispersed h-BN involved PW and nearly 8 times larger compared with that of bare PW.The optimal thermal conductive composites demonstrated ultrafast heat dissipation as well as leakage resistance for lithium-ion batteries(LIBs),heat generated by LIBs can be effectively transferred under the working state and the surface temperature kept 6.9℃ lower at most under 2–5℃ continuous charge-discharge process compared with that of bare one which illustrated great potential for industrial thermal management.

Hexagonal boron nitride hollow capsules with collapsed surfaces:Chemical vapor deposition with single-source precursor ammonium fluoroborate

SBA-15（mesoporous SiO2） is used to stabilize and transfer F-in the NH4BF4 CVD reaction for the first time, and a large-scale crystalline h-BN phase can be prepared. We successfully fabricate hollow h-BN capsules with collapsed surfaces in our designed NH4BF4 CVD system. Optimum temperature conditions are obtained, and a detailed formation mechanism is further proposed. The successful SBA-15-assisted NH4BF4 CVD route is of importance and enriches the engineering technology in the h-BN single-source CVD reaction.

Van der Waals heterostructure of phosphorene and hexagonal boron nitride: First-principles modeling

We have studied the structural and electronic properties of a hybrid hexagonal boron nitride with phosphorene nanocomposite using ab initio density functional calculations. It is found that the interaction between the hexagonal boron nitride and phosphorene is dominated by the weak van der Waals interaction, with their own intrinsic electronic properties preserved. Furthermore, the band gap of the nanocomposite is dependent on the interfacial distance. Our results could shed light on the design of new devices based on van der Waals heterostructure.

Observation of resistive switching in a graphite/hexagonal boron nitride/graphite heterostructure memristor

With the atomically sharp interface and stable switching channel, van der Waals(vdW) heterostructure memristors have attracted extensive interests for the application of high-density memory and neuromorphic computing. Here, we demonstrate a new type of vdW heterostructure memristor device by sandwiching a single-crystalline h-BN layer between two thin graphites. In such a device, a stable bipolar resistive switching(RS) behavior has been observed for the first time. We also characterize their switching performance, and observe an on/off ratio of >10^(3) and a minimum RESET voltage variation coefficient of3.81%. Our work underscores the potential of 2D materials and vdW heterostructures for emerging memory and neuromorphic applications.

Dielectric Properties of Multi-Layers Hexagonal Boron Nitride

A higher value of the dielectric constant of h-BN makes it quite favourable material in energy storing device. The variation in dielectric constant was observed as a function of thickness. In this research work multilayers of Hexagonal Boron Nitride (h-BN) was fabricated by using the Chemical exfoliation method. Two solvents Dimethylformamide (DMF) and Isopropyl Alcohol (IPA) were used for the exfoliation of h-BN. Successful sonication of hexagonal boron nitride led to the formation of Boron Nitride nanosheets (BNNs). The stable dispersibility of h-BN in Dimethylformamide and Isopropyl Alcohol was confirmed by UV Visible Spectroscopy, X-ray diffraction (XRD) and Scanning electron microscopy (SEM) confirm the mono crystallite structure (002) and nanoflakes like morphology of h-BN respectively. This appropriate strategy offered a feasible route to produce multilayer of hexagonal boron nitride. After the successful fabrication of h-BN multilayers its dielectric properties were calculated by using LCR meter. Profilometer revealed the variation in thickness and value of Dielectric constant was calculated by using its formula.

Remote heteroepitaxy of transition metal dichalcogenides through monolayer hexagonal boron nitride

As a very promising epitaxy technology,the remote epitaxy has attracted extensive attention in recent years,in which graphene is the most used interlayer material.As an isomorphic of graphene,two-dimensional(2D)hexagonal boron nitride(h-BN),is another promising interlayer for the remote epitaxy.However,there is a current debate on the feasibility of using h-BN as interlayer in the remote epitaxy.Herein,we demonstrate that the potential field of sapphire can completely penetrate monolayer h-BN,and hence the remote epitaxy of ZrS_(2) layers can be realized on sapphire substrates through monolayer h-BN.The field of sapphire can only partially penetrate the bilayer h-BN and result in the mixing of remote epitaxy and van der Waals(vdWs)epitaxy.Due to the weak interfacial scattering and high crystalline quality of ZrS_(2) epilayer,the ZrS_(2) photodetector with monolayer h-BN shows the best performance,with an on/off ratio of more than 2×10^(5) and a responsivity up to 379 mA·W^(-1).This work provides an efficient approach to prepare single-crystal transition metal dichalcogenides and their heterojunctions with h-BN,which have great potential in developing large-area 2D electronic devices.

Understanding the Thermal Impedance of Silicone Rubber/Hexagonal Boron Nitride Composites as Thermal Interface Materials

Silicone rubber(SR) composites are most widely used as thermal interface materials(TIMs) for electronics heat dissipation. Thermal impedance as the main bottleneck limiting the performance of TIMs is usually neglected. Herein, the thermal impedance of SR composites loaded with different levels of hexagonal boron nitride(h-BN) as TIMs was elaborated for the first time by the ASTM D 5470 standard test and finite element analysis. It was found that elastic modulus and surface roughness of SR composites increased with the increase of h-BN content, indicating that the conformity was reduced. When the assembly pressure was 0.69 MPa, there existed an optimal h-BN content at which the contact resistance was minimum(0.39 K·cm^(2)·W^(-1)). Although the decreased bond line thickness(BLT) by increasing the assembly pressure was beneficial to reduce the thermal impedance, the proper assembly pressure should be selected to prevent the warpage of the contact surfaces and the increase in contact resistance, according to the compression properties of the SR composites. This study provides valuable insights into fabrication of high-performance TIMs for modern electronic device applications.

Hexagonal boron nitride based slippery liquid infused porous surface with anti-corrosion, anti-contaminant and anti-icing properties for protecting magnesium alloy

In an era where the concept of green development is deeply rooted, magnesium(Mg) alloy as a light metal has a long-term development prospect in the process of energy saving, emission reduction and environmental improvement. However, anti-corrosion performance of Mg alloy is poor due to the high chemical activity and low equilibrium potential, which limits the development of Mg alloy products.Herein, three-dimensional mesopore hollow polypyrrole spheres(MHPS) were prepared, and the MHPS was inserted into the middle of the stacked hexagon boron nitride(h-BN) lamellae, which allowed the hBN to be separated forming a further composite with abundant pore structure. Subsequently, the MHPS/hBN-OH composite was uniformly sprayed on the Mg alloy surface via simple spraying method to form the superhydrophobic surface(SHS). Finally, the slippery liquid infused porous surface(SLIPS) was successfully fabricated by applying drops of silicone lubricant on the superhydrophobic coating surface. After a series of characterization and testing, the results showed that the stacking of h-BN lamellae was significantly reduced after h-BN was successfully embedded by MHPS. In addition, the fabricated SLIPS have excellent self-cleaning, mechanical stability, anti-icing and anti-corrosion properties. Therefore, the method of embedding polymer microspheres not only offers a new strategy for h-BN exfoliation, but also the successful prepared SLIPS largely retards the corrosion of Mg alloy while providing new ideas for the development of SLIPS.

Recension of boron nitride phase diagram based on high-pressure and high-temperature experiments

Cubic boron nitride and hexagonal boron nitride are the two predominant crystalline structures of boron nitride.They can interconvert under varying pressure and temperature conditions.However,this transformation requires overcoming significant potential barriers in dynamics,which poses great difficulty in determining the c-BN/h-BN phase boundary.This study used high-pressure in situ differential thermal measurements to ascertain the temperature of h-BN/c-BN conversion within the commonly used pressure range(3-6 GPa)for the industrial synthesis of c-BN to constrain the P-T phase boundary of h-BN/c-BN in the pressure-temperature range as much as possible.Based on the analysis of the experimental data,it is determined that the relationship between pressure and temperature conforms to the following equation:P=a+1/bT.Here,P denotes the pressure(GPa)and T is the temperature(K).The coefficients are a=-3.8±0.8 GPa and b=229.8±17.1 GPa/K.These findings call into question existing high-pressure and high-temperature phase diagrams of boron nitride,which seem to overstate the phase boundary temperature between c-BN and h-BN.The BN phase diagram obtained from this study can provide critical temperature and pressure condition guidance for the industrial synthesis of c-BN,thus optimizing synthesis efficiency and product performance.

Boron Nitride-Integrated Lithium Batteries:Exploring Innovations in Longevity and Performance

The current global warming,coupled with the growing demand for energy in our daily lives,necessitates the development of more efficient and reliable energy storage devices.Lithium batteries(LBs)are at the forefront of emerging power sources addressing these challenges.Recent studies have shown that integrating hexagonal boron nitride(h-BN)nanomaterials into LBs enhances the safety,longevity,and electrochemical performance of all LB components,including electrodes,electrolytes,and separators,thereby suggesting their potential value in advancing eco-friendly energy solutions.This review provides an overview of the most recent applications of h-BN nanomaterials in LBs.It begins with an informative introduction to h-BN nanomaterials and their relevant properties in the context of LB applications.Subsequently,it addresses the challenges posed by h-BN and discusses existing strategies to overcome these limitations,offering valuable insights into the potential of BN nanomaterials.The review then proceeds to outline the functions of h-BN in LB components,emphasizing the molecular-level mechanisms responsible for performance improvements.Finally,the review concludes by presenting the current challenges and prospects of integrating h-BN nanomaterials into battery research.

Chemical vapor deposition growth of large-scale hexagonal boron nitride with controllable orientation

Chemical vapor deposition （CVD） synthesis of large-domain hexagonal boron nitride （h-BN） with a uniform thickness is very challenging, mainly due to the extremely high nucleation density of this material. Herein, we report the successful growth of wafer-scale, high-quality h-BN monolayer films that have large single-crystalline domain sizes, up to -72 μm in edge length, prepared using a folded Cu-foil enclosure. The highly confined growth space and the smooth Cu surface inside the enclosure effectively reduced the precursor feeding rate together and induced a drastic decrease in the nucleation density. The orientation of the as-grown h-BN monolayer was found to be strongly correlated to the crystallographic orientation of the Cu substrate： the Cu （111） face being the best substrate for growing aligned h-BN domains and even single-crystalline monolayers. This is consistent with our density functional theory calculations. The present study offers a practical pathway for growing high-quality h-BN films by deepening our fundamental understanding of the process of their growth by CVD.

High thermal conductivity of suspended few-layer hexagonal boron nitride sheets

The thermal conduction of suspended few-layer hexagonal boron nitride （h-BN） sheets was experimentally investigated using a noncontact micro-Raman spectroscopy method. The first-order temperature coefficients for monolayer （1L）, bilayer （2L） and nine-layer （9L） h-BN sheets were measured to be -（3.41 ± 0.12）× 10-2, -（3.15 ± 0.14） × 10-2 and -（3.78 ±0.16）× 10-2 cm-1.K-1, respectively. The room-temperature thermal conductivity of few-layer h-BN sheets was found to be in the range from 227 to 280 W.m-1-K-1, which is comparable to that of bulk h-BN, indicating their potential use as important components to solve heat dissipation problems in thermal management configurations.