The MOSFET gate currents of high k gate dielectrics due to direct tunneling are investigated by using a new direct tunneling current model developed.The model includes both the inversion layer quantization effect with...The MOSFET gate currents of high k gate dielectrics due to direct tunneling are investigated by using a new direct tunneling current model developed.The model includes both the inversion layer quantization effect with finite barrier height and the polysilicon depletion effect.The impacts of dielectric constant and conduction band offset as well as the band gap on the gate current are discussed.The results indicate that the gate dielectric materials with higher dielectric constant,larger conduction band offset and the larger band gap are necessary to reduce the gate current.The calculated results can be used as a guide to select the appropriate high k gate dielectric materials for MOSFETs.展开更多
The short-channel performance of typical 70nm MOSFETs with high K gate dielectric is widely studied by using a two dimensional(2-D) device simulator.The short-channel performance is degraded from the fringing field a...The short-channel performance of typical 70nm MOSFETs with high K gate dielectric is widely studied by using a two dimensional(2-D) device simulator.The short-channel performance is degraded from the fringing field and lower the source/drain junction resistance.The sidewall material is found very useful to eliminate the fringing-induced berrier lowing effect.展开更多
China is short of potassium resources, it only produces about 30 t of potash fertilizers per year. While China used about 650 t of potash fertilizer in 2000 by importing more than 95% of its potash fertilizers from Ca...China is short of potassium resources, it only produces about 30 t of potash fertilizers per year. While China used about 650 t of potash fertilizer in 2000 by importing more than 95% of its potash fertilizers from Canada or Europe. So, using varieties with high K utilization efficiency was very important.展开更多
A large amount of ultra-low-power consumption electronic devices are urgently needed in the new era of the internet of things,which demand relatively low frequency response.Here,atomic layer deposition has been utiliz...A large amount of ultra-low-power consumption electronic devices are urgently needed in the new era of the internet of things,which demand relatively low frequency response.Here,atomic layer deposition has been utilized to fabricate the ion polarization dielectric of the Li PON-Al_(2)O_(3) hybrid structure.The Li PON thin film is periodically stacked in the Al_(2)O_(3) matrix.This hybrid structure presents a frequency-dependent dielectric constant,of which k is significantly higher than the aluminum oxide matrix from 1 k Hz to 200 k Hz in frequency.The increased dielectric constant is attributed to the lithium ions shifting locally upon the applied electrical field,which shows an additional polarization to the Al_(2)O_(3) matrix.This work provides a new strategy with promising potential to engineers for the dielectric constant of the gate oxide and sheds light on the application of electrolyte/dielectric hybrid structure in a variety of devices from capacitors to transistors.展开更多
针对传统序列模式挖掘(SPM)不考虑模式重复性且忽略各项的效用(单价或利润)与模式长度对用户兴趣度影响的问题,提出一次性条件下top-k高平均效用序列模式挖掘(TOUP)算法。TOUP算法主要包括两个核心步骤:平均效用计算和候选模式生成。首...针对传统序列模式挖掘(SPM)不考虑模式重复性且忽略各项的效用(单价或利润)与模式长度对用户兴趣度影响的问题,提出一次性条件下top-k高平均效用序列模式挖掘(TOUP)算法。TOUP算法主要包括两个核心步骤:平均效用计算和候选模式生成。首先,提出基于各项出现位置与项重复关系数组的CSP(Calculation Support of Pattern)算法计算模式支持度,从而实现模式平均效用的快速计算;其次,采用项集扩展和序列扩展生成候选模式,并提出了最大平均效用上界,基于该上界实现对候选模式的有效剪枝。在5个真实数据集和1个合成数据集上的实验结果表明,相较于TOUP-dfs和HAOP-ms算法,TOUP算法的候选模式数分别降低了38.5%~99.8%和0.9%~77.6%;运行时间分别降低了33.6%~97.1%和57.9%~97.2%。TOUP的算法性能更优,能更高效地挖掘用户感兴趣的模式。展开更多
Recently,rare-earth oxide films have attracted more and more attention as gate dielectrics in metaloxide-semiconductor(MOS)devices,showing the advantages of high dielectric constant(k value),large band gap(Eg)and outs...Recently,rare-earth oxide films have attracted more and more attention as gate dielectrics in metaloxide-semiconductor(MOS)devices,showing the advantages of high dielectric constant(k value),large band gap(Eg)and outstanding physical and chemical stability in contact with silicon substrates.This paper reviews the recent development of rare earth oxide-based gate dielectric films.Aiming at the problem that k value of rare earth oxides(REOs)is generally inversely proportio nal to the band gap value,one of the biggest technical obstacles of high k films,we reviewed three strategies reported in recent papers,namely doping modification,nitriding treatment and multilayer composite,which can provide some insights for long-term development of MOS devices in integrated circuit(IC).展开更多
文摘The MOSFET gate currents of high k gate dielectrics due to direct tunneling are investigated by using a new direct tunneling current model developed.The model includes both the inversion layer quantization effect with finite barrier height and the polysilicon depletion effect.The impacts of dielectric constant and conduction band offset as well as the band gap on the gate current are discussed.The results indicate that the gate dielectric materials with higher dielectric constant,larger conduction band offset and the larger band gap are necessary to reduce the gate current.The calculated results can be used as a guide to select the appropriate high k gate dielectric materials for MOSFETs.
文摘The short-channel performance of typical 70nm MOSFETs with high K gate dielectric is widely studied by using a two dimensional(2-D) device simulator.The short-channel performance is degraded from the fringing field and lower the source/drain junction resistance.The sidewall material is found very useful to eliminate the fringing-induced berrier lowing effect.
文摘China is short of potassium resources, it only produces about 30 t of potash fertilizers per year. While China used about 650 t of potash fertilizer in 2000 by importing more than 95% of its potash fertilizers from Canada or Europe. So, using varieties with high K utilization efficiency was very important.
基金Project supported by the National Key Research and Development Program of China(Grant Nos.2018YFB2200500and 2018YFB2200504)the National Natural Science Foundation of China(Grant Nos.22090010,22090011,and61504070)。
文摘A large amount of ultra-low-power consumption electronic devices are urgently needed in the new era of the internet of things,which demand relatively low frequency response.Here,atomic layer deposition has been utilized to fabricate the ion polarization dielectric of the Li PON-Al_(2)O_(3) hybrid structure.The Li PON thin film is periodically stacked in the Al_(2)O_(3) matrix.This hybrid structure presents a frequency-dependent dielectric constant,of which k is significantly higher than the aluminum oxide matrix from 1 k Hz to 200 k Hz in frequency.The increased dielectric constant is attributed to the lithium ions shifting locally upon the applied electrical field,which shows an additional polarization to the Al_(2)O_(3) matrix.This work provides a new strategy with promising potential to engineers for the dielectric constant of the gate oxide and sheds light on the application of electrolyte/dielectric hybrid structure in a variety of devices from capacitors to transistors.
文摘针对传统序列模式挖掘(SPM)不考虑模式重复性且忽略各项的效用(单价或利润)与模式长度对用户兴趣度影响的问题,提出一次性条件下top-k高平均效用序列模式挖掘(TOUP)算法。TOUP算法主要包括两个核心步骤:平均效用计算和候选模式生成。首先,提出基于各项出现位置与项重复关系数组的CSP(Calculation Support of Pattern)算法计算模式支持度,从而实现模式平均效用的快速计算;其次,采用项集扩展和序列扩展生成候选模式,并提出了最大平均效用上界,基于该上界实现对候选模式的有效剪枝。在5个真实数据集和1个合成数据集上的实验结果表明,相较于TOUP-dfs和HAOP-ms算法,TOUP算法的候选模式数分别降低了38.5%~99.8%和0.9%~77.6%;运行时间分别降低了33.6%~97.1%和57.9%~97.2%。TOUP的算法性能更优,能更高效地挖掘用户感兴趣的模式。
基金MOST of China(2017YFB0405902,2018YFB1502102)China Postdoctoral Science Foundation(BX20200004)。
文摘Recently,rare-earth oxide films have attracted more and more attention as gate dielectrics in metaloxide-semiconductor(MOS)devices,showing the advantages of high dielectric constant(k value),large band gap(Eg)and outstanding physical and chemical stability in contact with silicon substrates.This paper reviews the recent development of rare earth oxide-based gate dielectric films.Aiming at the problem that k value of rare earth oxides(REOs)is generally inversely proportio nal to the band gap value,one of the biggest technical obstacles of high k films,we reviewed three strategies reported in recent papers,namely doping modification,nitriding treatment and multilayer composite,which can provide some insights for long-term development of MOS devices in integrated circuit(IC).
