The effects of Cd^(2+) ions on the microstructure,magnetic properties,and dielectric properties of Bi_(2)O_(3)-added MgFe_(2)O_(4) ferrites(Cd_(x)Mg_(1-x)Fe_(2)O_(4),x=0.00,0.15,0.30 and 0.45)are obtained by adopting ...The effects of Cd^(2+) ions on the microstructure,magnetic properties,and dielectric properties of Bi_(2)O_(3)-added MgFe_(2)O_(4) ferrites(Cd_(x)Mg_(1-x)Fe_(2)O_(4),x=0.00,0.15,0.30 and 0.45)are obtained by adopting the solid-state reaction method at a low temperature(910℃).The objective is to achieve matching impedances,low magnetic and dielectric losses(tanδμand tanδε,respectively),and a relatively large miniaturization factor to reduce antenna size.Experimental results indicate that the cations occupying the tetrahedral(A)and octahedral(B)ion sites are redistributed,resulting in an enhanced super-exchange interaction between the two sublattices.As a result,improved magnetization,including the increase in saturation magnetization(41.74 emu/g)and decrease in coercivity(63.75 Oe),is realized.The real part of permeability(μ')also increases with increasing concentration of Cd^(2+) ions.When x is 0.15,matching impedances with equivalent μ'and ε'values are obtained over a long frequency range(1–150MHz).Moreover,the formation of a dense microstructure guarantees that losses occur at low orders of magnitude(tanδμ≈10−2 and tanδε≈10−3).Accordingly,these properties afford wide application perspectives for the proposed compounds in the high-frequency region,i.e.,from high-frequency to very-high-frequency bands.展开更多
设计制作了一款ZVS移相全桥变换器的低压大电流开关电源,详细阐述了部分电路的设计过程和参数计算,并通过抑制桥式变换器中超前/滞后桥臂功率管的高频谐振,降低主电路中上下桥臂的直通风险。最后设计制作的3 k W(15 V/200 A)低压大电流...设计制作了一款ZVS移相全桥变换器的低压大电流开关电源,详细阐述了部分电路的设计过程和参数计算,并通过抑制桥式变换器中超前/滞后桥臂功率管的高频谐振,降低主电路中上下桥臂的直通风险。最后设计制作的3 k W(15 V/200 A)低压大电流电源验证了设计的可行性,给出了详细的实验结果,整机效率达90%以上,对电源开发者有一定的借鉴作用。展开更多
为了减小氮化镓驱动电路高频工作时的损耗,针对共栅共源氮化镓高电子迁移率晶体管(Cascode GaN HEMT)提出一种高频谐振驱动电路,采用储能元件替代传统驱动电路中的耗能元件,电感电流为GaN器件栅极电容充/放电,有源密勒钳位电路抑制桥臂...为了减小氮化镓驱动电路高频工作时的损耗,针对共栅共源氮化镓高电子迁移率晶体管(Cascode GaN HEMT)提出一种高频谐振驱动电路,采用储能元件替代传统驱动电路中的耗能元件,电感电流为GaN器件栅极电容充/放电,有源密勒钳位电路抑制桥臂串扰。该文重点研究高频谐振驱动电路的工作模态,对电路损耗进行详细分析,给出电感取值的选取原则,并利用PSIM软件对电路进行仿真。最终搭建实验平台对电路的性能进行测试。结果表明,电感为电容充/放电提供低阻抗通路,能有效减小GaN器件驱动电路的电压振荡,明显降低驱动电路的损耗。仿真和实验同时证明了所提出的电路具有较好的性能。展开更多
基金This work was supported by National Key Scientific Instrument and Equipment Development Project No.51827802by Major Science and Technology projects in Sichuan Province Nos.2019ZDZX0026 and 20ZDYF2818+1 种基金by the National Natural Science Foundation of China No.51872041by Foundation for University Teacher of Education of China No.ZYGX2019J011.
文摘The effects of Cd^(2+) ions on the microstructure,magnetic properties,and dielectric properties of Bi_(2)O_(3)-added MgFe_(2)O_(4) ferrites(Cd_(x)Mg_(1-x)Fe_(2)O_(4),x=0.00,0.15,0.30 and 0.45)are obtained by adopting the solid-state reaction method at a low temperature(910℃).The objective is to achieve matching impedances,low magnetic and dielectric losses(tanδμand tanδε,respectively),and a relatively large miniaturization factor to reduce antenna size.Experimental results indicate that the cations occupying the tetrahedral(A)and octahedral(B)ion sites are redistributed,resulting in an enhanced super-exchange interaction between the two sublattices.As a result,improved magnetization,including the increase in saturation magnetization(41.74 emu/g)and decrease in coercivity(63.75 Oe),is realized.The real part of permeability(μ')also increases with increasing concentration of Cd^(2+) ions.When x is 0.15,matching impedances with equivalent μ'and ε'values are obtained over a long frequency range(1–150MHz).Moreover,the formation of a dense microstructure guarantees that losses occur at low orders of magnitude(tanδμ≈10−2 and tanδε≈10−3).Accordingly,these properties afford wide application perspectives for the proposed compounds in the high-frequency region,i.e.,from high-frequency to very-high-frequency bands.
文摘设计制作了一款ZVS移相全桥变换器的低压大电流开关电源,详细阐述了部分电路的设计过程和参数计算,并通过抑制桥式变换器中超前/滞后桥臂功率管的高频谐振,降低主电路中上下桥臂的直通风险。最后设计制作的3 k W(15 V/200 A)低压大电流电源验证了设计的可行性,给出了详细的实验结果,整机效率达90%以上,对电源开发者有一定的借鉴作用。
文摘为了减小氮化镓驱动电路高频工作时的损耗,针对共栅共源氮化镓高电子迁移率晶体管(Cascode GaN HEMT)提出一种高频谐振驱动电路,采用储能元件替代传统驱动电路中的耗能元件,电感电流为GaN器件栅极电容充/放电,有源密勒钳位电路抑制桥臂串扰。该文重点研究高频谐振驱动电路的工作模态,对电路损耗进行详细分析,给出电感取值的选取原则,并利用PSIM软件对电路进行仿真。最终搭建实验平台对电路的性能进行测试。结果表明,电感为电容充/放电提供低阻抗通路,能有效减小GaN器件驱动电路的电压振荡,明显降低驱动电路的损耗。仿真和实验同时证明了所提出的电路具有较好的性能。
