On the high conductive layer near the Moho and the transitional zone between the crust and mantle in Tianshui region

On the basis of MTS and DSS data in and near Tianshui region,the deep structure contour of the region was expounded.The regional distribution of the high conductive layer near the Moho in the region becomes one of the most obvious characters of the conductivity structure in the crust and mantle,and it is corresponding to the low S wave velocity zone near the Moho and is guessed as the transitional zone between the crust and mantle in the region.In this paper,the behaviour of medium and the thermodynamic circumstance of the conductive low shear velocity layer near the Moho were demonstrated emphatically,and the cause of formation of the layer was roughly explained under specified conditions of geographical environment and deep structure characters in this region.

Transforming a Two-Dimensional Layered Insulator into a Semiconductor or a Highly Conductive Metal through Transition Metal Ion Intercalation

Atomically thin two-dimensional(2D) materials are the building bricks for next-generation electronics and optoelectronics, which demand plentiful functional properties in mechanics, transport, magnetism and photoresponse.For electronic devices, not only metals and high-performance semiconductors but also insulators and dielectric materials are highly desirable. Layered structures composed of 2D materials of different properties can be delicately designed as various useful heterojunction or homojunction devices, in which the designs on the same material(namely homojunction) are of special interest because preparation techniques can be greatly simplified and atomically seamless interfaces can be achieved. We demonstrate that the insulating pristine ZnPS_3, a ternary transition-metal phosphorus trichalcogenide, can be transformed into a highly conductive metal and an n-type semiconductor by intercalating Co and Cu atoms, respectively. The field-effect-transistor(FET) devices are prepared via an ultraviolet exposure lithography technique. The Co-ZnPS_3 device exhibits an electrical conductivity of 8 × 10^(4) S/m, which is comparable to the conductivity of graphene. The Cu-ZnPS_3 FET reveals a current ON/OFF ratio of 1-05 and a mobility of 3 × 10^(-2 )cm^(2)·V^(-1)·s^(-1). The realization of an insulator, a typical semiconductor and a metallic state in the same 2D material provides an opportunity to fabricate n-metal homojunctions and other in-plane electronic functional devices.

An Investigation of Deep Electrical Structure of Qiangtang Basin,Xizang(Tibet),China

In order to study the deep geoelectrical structure and the regional geological structure and detect potential oil and gas areas in Qiangtang basin in northern Xizang (Tibet ), 222 MT soundings were conducted along three N - S MT profiles across the basin .The MT results indicate that the south and north parts of the Qiangtang basin have a good contrast in the deep electri cal structure . In the south Qiangtang , there are generally two high conductivity layers in the crust . The first is at a depth of about 10 - 25 km and possesses a resistivity of about 10 - 80 Ωm .The second ,the high conductivity layer in the lower crust ,is at a depth of about 40 - 70 km with 3 - 50 Ωm .In the north Qiangtang .there is generally one high conductivity layer .It is at a depth of about 10 - 30 km and the resistivity is about 1-60 Ωm . The thickness of the second high conductivity layer in both the south Qiangtang and the Bangong-Nujiang suture is much greater than that of the first .The thickness of the lithosphere is about 110-120 km for the Bangong-Nujiang suture ,115 km for the south Qiangtang and 100-130 km for the north Qiangtang . On the difference of the deep electrical structures of the crust between the south and the north Qiangtang , we believe that it is related to the eastward flow of the crustal substance .