期刊文献+
共找到1篇文章
< 1 >
每页显示 20 50 100
The pulsed microwave damage trend of a bipolar transistor as a function of pulse parameters 被引量:1
1
作者 马振洋 柴常春 +3 位作者 任兴荣 杨银堂 赵颖博 乔丽萍 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第2期534-538,共5页
In the present paper we conduct a theoretical study of the thermal accumulation effect of a typical bipolar transistor caused by high power pulsed microwaves(HPMs),and investigate the thermal accumulation effect as ... In the present paper we conduct a theoretical study of the thermal accumulation effect of a typical bipolar transistor caused by high power pulsed microwaves(HPMs),and investigate the thermal accumulation effect as a function of pulse repetition frequency(PRF) and duty cycle.A study of the damage mechanism of the device is carried out from the variation analysis of the distribution of the electric field and the current density.The result shows that the accumulation temperature increases with PRF increasing and the threshold for the transistor is about 2 kHz.The response of the peak temperature induced by the injected single pulses indicates that the falling time is much longer than the rising time.Adopting the fitting method,the relationship between the peak temperature and the time during the rising edge and that between the peak temperature and the time during the falling edge are obtained.Moreover,the accumulation temperature decreases with duty cycle increasing for a certain mean power. 展开更多
关键词 bipolar transistor high power microwave pulse repetition frequency duty cycle
下载PDF
上一页 1 下一页 到第
使用帮助 返回顶部