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High-power High-efficient and Simplified High-frequency Switching Power Supply for Electrolytic Plating 被引量:6
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作者 MA Fujun LUO An XIAO Huagen 《中国电机工程学报》 EI CSCD 北大核心 2012年第21期I0001-I0022,共22页
针对大功率电解电镀开关电源的输入整流级引起的无功和谐波等电能质量问题,研究了一种基于高效PWM整流的高频开关电源。该电源前级整流器仅用4个开关管来进行PWM整流,后级采用半桥逆变器进行高频变换,显著减少了开关数量。针对三相四开... 针对大功率电解电镀开关电源的输入整流级引起的无功和谐波等电能质量问题,研究了一种基于高效PWM整流的高频开关电源。该电源前级整流器仅用4个开关管来进行PWM整流,后级采用半桥逆变器进行高频变换,显著减少了开关数量。针对三相四开关PWM整流器,推导一种基于开关模型的无差拍控制方法,该方法可实现系统的快速、无差整流。针对多台开关电源的并联均流问题,提出一种基于虚拟阻抗的自均流控制方法,可实现多台电源的均流稳定运行。通过仿真与实验验证了所提结构和控制方法的正确性。 展开更多
关键词 高频开关电源 电镀电源 电解 PWM整流器 高功率 半桥式逆变器 电能质量 HSPS
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A Novel Half-Bridge Power Supply for High Speed Drilling Electrical Discharge Machining
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作者 He Huang Jicheng Bai +1 位作者 Zesheng Lu Yongfeng Guo 《Journal of Electromagnetic Analysis and Applications》 2009年第2期108-113,共6页
High Speed Drilling Electrical Discharge Machining (HSDEDM) uses controlled electric sparks to erode the metal in a work-piece. Through the years, HSDEDM process has widely been used in high speed drilling and in manu... High Speed Drilling Electrical Discharge Machining (HSDEDM) uses controlled electric sparks to erode the metal in a work-piece. Through the years, HSDEDM process has widely been used in high speed drilling and in manufacturing large aspect ratio holes for hard-to-machine material. The power supplies of HSDEDM providing high power applica-tions can have different topologies. In this paper, a novel Pulsed-Width-Modulated (PWM) half-bridge HSDEDM power supply that achieves Zero-Voltage-Switching (ZVS) for switches and Zero-Current-Switching (ZCS) for the dis-charge gap has been developed. This power supply has excellent features that include minimal component count and inherent protection under short circuit conditions. This topology has an energy conservation feature and removes the need for output bulk capacitors and resistances. Energy used in the erosion process will be controlled by the switched IGBTs in the half-bridge network and be transferred to the gap between the tool and work-piece. The relative tool wear and machining speed of our proposed topology have been compared with that of a normal power supply with current limiting resistances. 展开更多
关键词 high Speed DRILLING Electrical Discharge Machining Half-Bridge power supply ZERO Current switchING ZERO Voltage switchING
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Design and Simulation of a Electrorheological(ER) Control High Voltage Power Supply
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作者 ZHU Shi-sha HUANG He-qing BAI Quan 《International Journal of Plant Engineering and Management》 2009年第3期142-146,共5页
Few applications with electrorheological (ER) fluids have been found in industry. One reason is high voltage power supplies cannot meet the requirement for ER effect. In this paper, an ER control high voltage power ... Few applications with electrorheological (ER) fluids have been found in industry. One reason is high voltage power supplies cannot meet the requirement for ER effect. In this paper, an ER control high voltage power supply for engineering application was designed which reduced power wastage by adopting soft switch technology; lessened its volume to satisfy micromation when adopting the planar transformer and improved its response character- istic by choosing an assistant discharging circuit. Simultaneously, a simulation analysis has been carried out. As results, the output voltage of this high voltage power supply is 5 kV, and the voltage can be continuously regulated and the voltage ripple is only 0. 7 %, so the requirement of stability is also achieved. 展开更多
关键词 ER control high voltage power supply application design soft switch technology SIMULATION
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Investigation on latch-up susceptibility induced by high-power microwave in complementary metal–oxide–semiconductor inverter 被引量:4
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作者 Yu-Hang Zhang Chang-Chun Chai +4 位作者 Xin-Hai Yu Yin-Tang Yang Yang Liu Qing-Yang Fan Chun-Lei Shi 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第2期492-498,共7页
The latch-up effect induced by high-power microwave(HPM) in complementary metal–oxide–semiconductor(CMOS) inverter is investigated in simulation and theory in this paper. The physical mechanisms of excess carrie... The latch-up effect induced by high-power microwave(HPM) in complementary metal–oxide–semiconductor(CMOS) inverter is investigated in simulation and theory in this paper. The physical mechanisms of excess carrier injection and HPM-induced latch-up are proposed. Analysis on upset characteristic under pulsed wave reveals increasing susceptibility under shorter-width pulsed wave which satisfies experimental data, and the dependence of upset threshold on pulse repetitive frequency(PRF) is believed to be due to the accumulation of excess carriers. Moreover, the trend that HPMinduced latch-up is more likely to happen in shallow-well device is proposed.Finally, the process of self-recovery which is ever-reported in experiment with its correlation with supply voltage and power level is elaborated, and the conclusions are consistent with reported experimental results. 展开更多
关键词 high-power microwave latch-up repetitive pulse frequency supply voltage dependence
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A Study on the Conducted Interference of Capacitor Charging Power Supply
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作者 Xiao Han Yinghui Gao +1 位作者 Yaohong Sun Ping Yan 《Energy and Power Engineering》 2013年第4期1134-1138,共5页
In this paper, a mathematical analysis of the EMI (Electromagnetic Interference) for a 20 kHz/10 kV capacitor charging power supply in frequency-domain is presented, and a related circuit model considering the transie... In this paper, a mathematical analysis of the EMI (Electromagnetic Interference) for a 20 kHz/10 kV capacitor charging power supply in frequency-domain is presented, and a related circuit model considering the transient switching interference is proposed. Due to the high working frequency and the device-switching transitions, the conducted EMI caused by the charging circuit which includes the harmonics of grid frequency, working frequency and device-switching transition frequencies. Thus under certain working situations or loads parallel power supply, the interference may cause charging failure. To solve this problem, a high frequency transformer modeled with stray capacitances and an approximation of the device-switching transition is applied in the Spice-based simulation model, and a mathematical analysis in frequency-domain is presented. 展开更多
关键词 CAPACITOR CHARGING power supply Electromagnetic Transient Distributed Parameter CIRCUITS high frequency and high Voltage Transformer frequency Domain Analysis
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A Novel Device for Real-Time Monitoring of High Frequency Phenomena in CENELEC PLC Band
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作者 Bashir Ahmed Siddiqui Pertti Pakonen Pekka Verho 《Smart Grid and Renewable Energy》 2012年第2期152-157,共6页
This paper proposes the design and development of a novel, portable and low-cost intelligent electronic device (IED) for real-time monitoring of high frequency phenomena in CENELEC PLC band. A high speed floating-poin... This paper proposes the design and development of a novel, portable and low-cost intelligent electronic device (IED) for real-time monitoring of high frequency phenomena in CENELEC PLC band. A high speed floating-point digital signal processor (DSP) along with 4 MSPS analog-to-digital converter (ADC) is used to develop the intelligent electronic device. An optimized algorithm to process the analog signal in real-time and to extract the meaningful result using signal processing techniques has been implemented on the device. A laboratory environment has setup with all the necessary equipment including the development of the load model to evaluate the performance of the IED. Smart meter and concentrator is also connected to the low voltage (LV) network to monitor the PLC communication using the IED. The device has been tested in the laboratory and it has produced very promising results for time domain as well as frequency domain analysis. Those results imply that the IED is fully capable of monitoring high frequency disturbances in CENELEC PLC band. 展开更多
关键词 power Line communication (PLC) DIGITAL Signal PROCESSOR (DSP) Analog-to-Digital Converter (ADC) Fast FOURIER Transform (FFT) high frequency (HF) Interference
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Communication Resources Allocation for Time Delay Reduction of Frequency Regulation Service in High Renewable Penetrated Power System
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作者 Hongjie He Ning Zhang +3 位作者 Chongqing Kang Song Ci Fei Teng Goran Strbac 《CSEE Journal of Power and Energy Systems》 SCIE EI CSCD 2024年第2期468-480,共13页
The high renewable penetrated power system has severe frequency regulation problems.Distributed resources can provide frequency regulation services but are limited by com-munication time delay.This paper proposes a co... The high renewable penetrated power system has severe frequency regulation problems.Distributed resources can provide frequency regulation services but are limited by com-munication time delay.This paper proposes a communication resources allocation model to reduce communication time delay in frequency regulation service.Communication device resources and wireless spectrum resources are allocated to distributed resources when they participate in frequency regulation.We reveal impact of communication resources allocation on time delay reduction and frequency regulation performance.Besides,we study communication resources allocation solution in high renewable energy penetrated power systems.We provide a case study based on the HRP-38 system.Results show communication time delay decreases distributed resources'ability to provide frequency regulation service.On the other hand,allocating more communication resources to distributed resources'communica-tion services improves their frequency regulation performance.For power systems with renewable energy penetration above 70%,required communications resources are about five times as many as 30%renewable energy penetrated power systems to keep frequency performance the same.Index Terms-Communication resources allocation,commun-ication time delay,distributed resource,frequency regulation,high renewable energy penetrated power system. 展开更多
关键词 communication resources allocation communication time delay distributed resource frequency regulation high renewable energy penetrated power system
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Photonics-assisted THz wireless communication enabled by wide-bandwidth packaged backilluminated modified uni-traveling-carrier photodiode
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作者 Yuxin Tian Boyu Dong +11 位作者 Yaxuan Li Bing Xiong Junwen Zhang Changzheng Sun Zhibiao Hao Jian Wang Lai Wang Yanjun Han Hongtao Li Lin Gan Nan Chi Yi Luo 《Opto-Electronic Science》 2024年第7期20-29,共10页
This paper presents a wide-bandwidth back-illuminated modified uni-traveling-carrier photodiode(MUTC-PD)packaged with standard WR-5 rectangular waveguide for high-speed wireless communications.With optimized epitaxy s... This paper presents a wide-bandwidth back-illuminated modified uni-traveling-carrier photodiode(MUTC-PD)packaged with standard WR-5 rectangular waveguide for high-speed wireless communications.With optimized epitaxy structure and coplanar waveguide electrodes,the fabricated 4-μm-diameter PD exhibits ultra-flat frequency response and high saturation power.Integrated passive circuits including low-loss bias-tee and E-plane probe are designed to package the PD into a compact module with waveguide output.The packaged PD module has demonstrated a flat frequency response with fluctuations within±2.75 d B over a broadband of 140–220 GHz and a high saturated output power of-7.8 d Bm(166μW)at 140 GHz.For wireless communication applications,the packaged PD is used to implement 1-m free space transmission at carrier frequencies of 150.5 and 210.5 GHz,with transmission rates of 75 and 90 Gbps,respectively. 展开更多
关键词 modified uni-traveling-carrier photodiode integrated bias-tee E-plane probe flat frequency response high saturation power WR-5 output THz wireless communications
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基于TOPSwitchⅡ的开关电源设计 被引量:6
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作者 黄海宏 王海欣 《现代电子技术》 2006年第4期16-18,共3页
TOPSwitchⅡ系列芯片是PowerIntegration公司生产的开关电源专用集成电路,他将脉宽调制电路与高压MOSFET开关管及驱动电路等集成在一起,具备完善的保护功能。使用该芯片设计的小功率开关电源,可大大减少外围电路,降低成本,提高可靠性。... TOPSwitchⅡ系列芯片是PowerIntegration公司生产的开关电源专用集成电路,他将脉宽调制电路与高压MOSFET开关管及驱动电路等集成在一起,具备完善的保护功能。使用该芯片设计的小功率开关电源,可大大减少外围电路,降低成本,提高可靠性。介绍其内部结构和工作原理,给出几种应用于反激式功率变换电路的典型用法,并给出一种反激式开关电源的实用电路。 展开更多
关键词 开关电源 TOPswitch 反激 高压MOSFET开关管
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基于TOPSwitch-GX反激式变换器的高频变压器的设计 被引量:1
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作者 邱云兰 《现代电子技术》 2009年第21期179-181,185,共4页
随着电力电子技术的发展,开关电源的应用越来越广泛。反激式变换器以其设计简单,体积小巧等优势,广泛应用于小功率场合。其中,高频变压器承担了传递功率、隔离等作用,是设计中极为关键的一环。介绍TOPSwich-GX系列芯片的工作原理,并以... 随着电力电子技术的发展,开关电源的应用越来越广泛。反激式变换器以其设计简单,体积小巧等优势,广泛应用于小功率场合。其中,高频变压器承担了传递功率、隔离等作用,是设计中极为关键的一环。介绍TOPSwich-GX系列芯片的工作原理,并以一个基于它的单输出反激式变换器为例,详细阐述了高频变压器设计的原理和步骤,对设计实践有很好的指导意义。 展开更多
关键词 TOPswitch-GX 反激式变换器 高频变压器 开关电源
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基于TinySwitch-Ⅱ的双路隔离输出开关电源设计 被引量:1
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作者 黄以华 刘燕林 +1 位作者 廖世文 蔡如海 《通信电源技术》 2010年第2期1-4,共4页
在某些特定电路场合,需要提供多路的隔离直流电源。对于多路隔离输出的开关电源,不能采用多路共地输出开关电源的常用方法来提高其交叉调整率,而隔离式的方法却设计复杂。文中设计了一种基于TinySwitch-Ⅱ芯片TNY264的小功率双路隔离输... 在某些特定电路场合,需要提供多路的隔离直流电源。对于多路隔离输出的开关电源,不能采用多路共地输出开关电源的常用方法来提高其交叉调整率,而隔离式的方法却设计复杂。文中设计了一种基于TinySwitch-Ⅱ芯片TNY264的小功率双路隔离输出的开关电源,采用线性稳压芯片对辅助回路进行稳压的方法,设计简单易行,并给出了高频变压器的详细设计过程。设计结果测试表明,设计的开关电源具有很好的电压调整率和负载调整率。 展开更多
关键词 开关电源 TNY264 多路隔离输出 高频变压器
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TOPSwitch-Ⅱ系列芯片在功率集成开关电源中应用的研究
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作者 侯晓霞 高宁 《电气传动》 北大核心 2005年第4期58-60,共3页
TOPSwitch- 器件为三端单片开关电源,是一种将PWM和MOSF ET合二为一的新型集成芯片。与普通线性稳压电源相比其优点为体积小、重量轻,并且密度高、价格低;采用它制作高频开关电源,不仅简化了电路,同时可以改善电源的电磁兼容性能,且降... TOPSwitch- 器件为三端单片开关电源,是一种将PWM和MOSF ET合二为一的新型集成芯片。与普通线性稳压电源相比其优点为体积小、重量轻,并且密度高、价格低;采用它制作高频开关电源,不仅简化了电路,同时可以改善电源的电磁兼容性能,且降低了制作成本。介绍了一个多路输出开关电源的设计。 展开更多
关键词 集成开关电源 Ⅱ系列 三端单片开关电源 多路输出开关电源 应用 功率 MOSFET 线性稳压电源 高频开关电源 电磁兼容性能 集成芯片 合二为一 制作成本 PWM 体积小 重量轻 器件
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TOPSwitch-HX系列开关电源在雷达物位计样机的应用
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作者 冷建伟 贾旭 《化工自动化及仪表》 CAS 2014年第4期406-409,461,共5页
根据雷达物位计原理样机的设计规格需求,设计了一个以TOPSwitch-HX系列单片开关电源为控制芯片的单端反激式电源,介绍了该单片开关电源的特点、优势和隔离式稳压开关电源的完整设计方案,并给出了变压器的设计和电路板的布局。
关键词 单片开关电源 雷达物位计样机 TOPswitch-HX 高频变压器
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基于DPA-Switch的蓄电池供电系统开关电源设计
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作者 邵建设 唐帅 《黄冈师范学院学报》 2013年第6期48-52,共5页
采用美国Power Integration(PI)公司的单片集成DC-DC开关电源芯片DPA-Switch,设计并制作了一种DC-DC反激式高频开关电源,能够在12~48V电压等级蓄电池供电的电力电子系统中作为控制电源。介绍了以DPA-Switch系列DPA425芯片作为控制核心... 采用美国Power Integration(PI)公司的单片集成DC-DC开关电源芯片DPA-Switch,设计并制作了一种DC-DC反激式高频开关电源,能够在12~48V电压等级蓄电池供电的电力电子系统中作为控制电源。介绍了以DPA-Switch系列DPA425芯片作为控制核心的开关电源的工作原理,着重讨论了工作频率达400kHz的高频变压器的设计与制作。研究结果表明,该电源能够在12~48V电压等级蓄电池系统中稳定工作,输出±15V(0.3A)和±5V(0.5A)四路直流电压,各路输出电压波动小于5%,满足设计要求,该开关电源具有较好的工程实用性。 展开更多
关键词 蓄电池供电系统 反激式开关电源 DPA—switch正负多路输出 高频变压器
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第四代TOPSwitch-GX系列单片开关电源
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作者 吴芳 黄声华 《电源技术应用》 2002年第10期39-41,共3页
TOPSwitch-GX是美国Power Integrations公司在继TOPSwitch-Ⅰ、Ⅱ、FX三个系列之后,开发的最新单片开关电源系列,该系列芯片通过改进布局,扩展了电源功率,增加了大量新功能,从而有效地提高了电源设计的灵活性及电源效率。介绍了新型TOPS... TOPSwitch-GX是美国Power Integrations公司在继TOPSwitch-Ⅰ、Ⅱ、FX三个系列之后,开发的最新单片开关电源系列,该系列芯片通过改进布局,扩展了电源功率,增加了大量新功能,从而有效地提高了电源设计的灵活性及电源效率。介绍了新型TOPSwitch-GX系列中TOP242-250芯片的性能特点。 展开更多
关键词 第四代TOPswitch-GX系列 单片开关电源 软启动 高效率 电源电路
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基于TOPSwitch-GX系列的伺服系统多输出开关电源
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作者 孙兵成 李波 安群涛 《国外电子元器件》 2006年第5期42-46,共5页
用TOPSwitch-GX系列单片开关电源中的TOP244Y型电路设计了一种用于交流永磁同步电动机伺服系统的高交叉调整率的单端反激式多输出辅助开关电源。文中介绍TOPSwitch-GX的工作原理和结构特点,重点论述单端反激式多输出开关电源的设计及高... 用TOPSwitch-GX系列单片开关电源中的TOP244Y型电路设计了一种用于交流永磁同步电动机伺服系统的高交叉调整率的单端反激式多输出辅助开关电源。文中介绍TOPSwitch-GX的工作原理和结构特点,重点论述单端反激式多输出开关电源的设计及高频变压器的设计,并对设计的电源进行了试验。试验表明该电源在工作现场能稳定运行并满足系统的需求。 展开更多
关键词 开关电源 TOPswitch—GX 反激式 交叉调整 高频变压器
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TOPSwitch器件在电源中的应用 被引量:3
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作者 柏松 陆鸣 《电源技术应用》 2001年第1期19-23,共5页
采用 PWM 控制器和 MOSFET 功率开关一体化的集成控制芯片是新一代开关电源设计的重要特点和趋势。本文介绍美国功率集成公司(Power Integrations Inc.)于九十年代中期研制推出的三端 PWM/MOSFET 二合一集成控制器件 TOPSwitch 系列及... 采用 PWM 控制器和 MOSFET 功率开关一体化的集成控制芯片是新一代开关电源设计的重要特点和趋势。本文介绍美国功率集成公司(Power Integrations Inc.)于九十年代中期研制推出的三端 PWM/MOSFET 二合一集成控制器件 TOPSwitch 系列及其在开关电源设计中的应用,同时介绍如何应用 EXCEL 电子表格设计与 TOPSwitch 相匹配的高频功率变压器的程序。 展开更多
关键词 开关电源 TOPSwithch器件 集成控制芯片 MOSFET器件
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TOPSwitch-GX系列单片开关电源的应用 被引量:4
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作者 沙占友 王晓君 王彦朋 《电源技术应用》 2001年第8期385-388,共4页
介绍了 TOPSwitch-GX 系列产品在通用开关电源、DC/DC 变换式开关电源和多路输出式开关电源中的应用。
关键词 单片开关电源 TOPswitch-GX系列 电磁兼容 电源模块
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基于PowerEsim的开关电源的高频变压器设计 被引量:1
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作者 杨文广 杨玉岗 +1 位作者 李洪珠 高奇 《仪器仪表用户》 2009年第2期70-71,共2页
高频开关电源中,变压器受更多寄生参数的影响,对开关电源的影响也越来越大。因此,高频开关电源设计时,高频变压器的设计是重中之重。本文对高频变压器的设计进行了分析,应用PowerEsim软件对变压器的参数进行了优化,提高了开关电源的效率。
关键词 高频开关电源 高频变压器 powerEsim
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基于TOPSwitch-II的单片开关电源设计 被引量:2
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作者 张小华 张春喜 《通信电源技术》 2008年第1期43-45,48,共4页
TOPSwich-II器件为三端单片开关电源,是一种将PWM和MOSFET合二为一的新型集成芯片。与普通线性稳压电源相比其优点为体积小、重量轻,并且密度高、价格低;采用它制作高频开关电源,不仅简化了电路,同时可以改善电源的电磁兼容性能,且降低... TOPSwich-II器件为三端单片开关电源,是一种将PWM和MOSFET合二为一的新型集成芯片。与普通线性稳压电源相比其优点为体积小、重量轻,并且密度高、价格低;采用它制作高频开关电源,不仅简化了电路,同时可以改善电源的电磁兼容性能,且降低了制作成本。文章介绍了基于TOPSwitch-II单片开关电源的设计方法,实现了用于某温控仪表的四路输出开关电源。 展开更多
关键词 单片开关电源 TOPSwich-II 高频变压器 反激变换
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