Ion beam epitaxy （IBE） technology is a significant method for preparing high pure and high quality rare-earth functional films at low growth temperatue. A new method of preparing rare-earth functional films by ion b...Ion beam epitaxy （IBE） technology is a significant method for preparing high pure and high quality rare-earth functional films at low growth temperatue. A new method of preparing rare-earth functional films by ion beam epitaxy was reviewed in details. The recent developments and application of IBE on rare-earth functional films is focused, particularly for high-K materials CeO2, photoluminescence materials Gd2O3 and magnetic semiconductor materials Si1-x Gdx.展开更多
文摘Ion beam epitaxy （IBE） technology is a significant method for preparing high pure and high quality rare-earth functional films at low growth temperatue. A new method of preparing rare-earth functional films by ion beam epitaxy was reviewed in details. The recent developments and application of IBE on rare-earth functional films is focused, particularly for high-K materials CeO2, photoluminescence materials Gd2O3 and magnetic semiconductor materials Si1-x Gdx.
