We have investigated the transient characteristics of discrete Raman Amplifiers and found that the response time caused by gain saturation is dependent upon the wavelength, which corresponds to the effective length of...We have investigated the transient characteristics of discrete Raman Amplifiers and found that the response time caused by gain saturation is dependent upon the wavelength, which corresponds to the effective length of the pump light.展开更多
This paper presents a high-gain wideband low-noise IF amplifier aimed for the ALMA front end system using 90-nm LP CMOS technology.A topology of three optimized cascading stages is proposed to achieve a flat and wideb...This paper presents a high-gain wideband low-noise IF amplifier aimed for the ALMA front end system using 90-nm LP CMOS technology.A topology of three optimized cascading stages is proposed to achieve a flat and wideband gain.Incorporating an input inductor and a gate-inductive gain-peaking inductor,the active shunt feedback technique is employed to extend the matching bandwidth and optimize the noise figure.The circuit achieves a flat gain of 30.5 dB with 3 dB bandwidth of 1-16 GHz and a minimum noise figure of 3.76 dB.Under 1.2 V supply voltage,the proposed IF amplifier consumes 42 mW DC power.The chip die including pads takes up 0.53 mm~2,while the active area is only 0.022 mm~2.展开更多
This paper presents a VHF（30-300 MHz） RF programmable gain amplifier（PGA） with an adaptive phase correction technique.The proposed technique effectively mitigates phase errors over the VHF band,and the RFPGA as a ...This paper presents a VHF（30-300 MHz） RF programmable gain amplifier（PGA） with an adaptive phase correction technique.The proposed technique effectively mitigates phase errors over the VHF band,and the RFPGA as a whole satisfies all the specifications of the China mobile multimedia broadcasting VHF band applications.The RFPGA is implemented with a TSMC 0.25μm CMOS process.Measurement results reveal a gain range of around 61 dB,an ⅡP3 of-7 dBm at maximum gain,a power consumption of 10.2 mA at maximum gain,and a phase imbalance of less than 0.3 degrees.展开更多
文摘We have investigated the transient characteristics of discrete Raman Amplifiers and found that the response time caused by gain saturation is dependent upon the wavelength, which corresponds to the effective length of the pump light.
基金supported by the National Basic Research Program of China(No.2010CB327404)the National Natural Science Foundation of China(No.60901012)support from the Institute of RF & OE ICs,Southeast University and Engineering Research Center of RF-ICs & RF-Systems,Ministry of Education
文摘This paper presents a high-gain wideband low-noise IF amplifier aimed for the ALMA front end system using 90-nm LP CMOS technology.A topology of three optimized cascading stages is proposed to achieve a flat and wideband gain.Incorporating an input inductor and a gate-inductive gain-peaking inductor,the active shunt feedback technique is employed to extend the matching bandwidth and optimize the noise figure.The circuit achieves a flat gain of 30.5 dB with 3 dB bandwidth of 1-16 GHz and a minimum noise figure of 3.76 dB.Under 1.2 V supply voltage,the proposed IF amplifier consumes 42 mW DC power.The chip die including pads takes up 0.53 mm~2,while the active area is only 0.022 mm~2.
文摘This paper presents a VHF（30-300 MHz） RF programmable gain amplifier（PGA） with an adaptive phase correction technique.The proposed technique effectively mitigates phase errors over the VHF band,and the RFPGA as a whole satisfies all the specifications of the China mobile multimedia broadcasting VHF band applications.The RFPGA is implemented with a TSMC 0.25μm CMOS process.Measurement results reveal a gain range of around 61 dB,an ⅡP3 of-7 dBm at maximum gain,a power consumption of 10.2 mA at maximum gain,and a phase imbalance of less than 0.3 degrees.
