High valence metals engineering strategies of Fe/Co/Ni-based catalysts for boosted OER electrocatalysis

Electrocatalysis for the oxygen evolution reactions(OER)has attracted much attention due to its important role in water splitting and rechargeable metal-air batteries.Therefore,designing highly efficient and low-cost catalysts for OER process is essential as the conventional catalysts still rely on precious metals.Transition metal-based compounds have been widely investigated as active OER catalysts,and renewed interest in the high valence metals engineered compounds has been achieved for superior catalytic activity and stability.However,an in-depth understanding of the construction strategies and induced effects for the high valence metals engineered catalysts is still lacking and desired.In this review,we have summarized the construction strategies of high valence metals as dopants or formed heterostructures with the iron/cobalt/nickel(Fe/Co/Ni)-based catalysts.Then the induced effects on Fe/Co/Ni-based catalysts by incorporating high valence metals,e.g.,accelerating the surface reconstruction,forming amorphous structure,generating vacancies/defects,and acting as stabilizers,are highlighted.The impacts of high valence metals on OER performance are elucidated based on different elements,including molybdenum(Mo),tungsten(W),cerium(Ce),vanadium(V),chromium(Cr),manganese(Mn),niobium(Nb),zirconium(Zr).The correlations of construction strategies,induced effects,catalytic activity and OER reaction pathways are elaborated.Finally,the remaining challenges for further enhancements of OER performance induced by high valence metals are presented.

Novel ternary metals-based telluride electrocatalyst with synergistic effects of high valence non-3d metal and oxophilic Te for pH-universal hydrogen evolution reaction

Electrocatalyst designs based on oxophilic foreign atoms are considered a promising approach for developing efficient pH-universal hydrogen evolution reaction(HER)electrocatalysts by overcoming the sluggish alkaline HER kinetics.Here,we design ternary transition metals-based nickel telluride(Mo WNi Te)catalysts consisting of high valence non-3d Mo and W metals and oxophilic Te as a first demonstration of non-precious heterogeneous electrocatalysts following the bifunctional mechanism.The Mo WNi Te showed excellent HER catalytic performance with overpotentials of 72,125,and 182 mV to reach the current densities of 10,100,and 1000 mA cm^(-2),respectively,and the corresponding Tafel slope of 47,52,and 58 mV dec-1in alkaline media,which is much superior to commercial Pt/C.Additionally,the HER performance of Mo WNi Te is well maintained up to 3000 h at the current density of 100 mA cm^(-2).It is further demonstrated that the Mo WNi Te exhibits remarkable HER activities with an overpotential of 45 mV(31 mV)and Tafel slope of 60 mV dec-1(34 mV dec-1)at 10 mA cm^(-2)in neutral(acid)media.The superior HER performance of Mo WNi Te is attributed to the electronic structure modulation,inducing highly active low valence states by the incorporation of high valence non-3d transition metals.It is also attributed to the oxophilic effect of Te,accelerating water dissociation kinetics through a bifunctional catalytic mechanism in alkaline media.Density functional theory calculations further reveal that such synergistic effects lead to reduced free energy for an efficient water dissociation process,resulting in remarkable HER catalytic performances within universal pH environments.

Relationship between elongation and porosity for high porosity metal materials

A simplified model was proposed targeting at the isotropic high porosity metal materials with well distributed structure. From the model the mathematical relationship between elongation and porosity was deduced for those materials, and the relationship formula was derived generally for actual high porosity metals at last, whose validity is supported by the representative experiment on a nickel foam prepared by electrodeposition. A simplified model was proposed targeting at the isotropic high porosity metal materials with well distributed structure. From the model the mathematical relationship between elongation and porosity was deduced for those materials, and the relationship formula was derived generally for actual high porosity metals at last, whose validity is supported by the representative experiment on a nickel foam prepared by electrodeposition.

Dynamic fracture toughness of high strength metals under impact loading:increase or decrease

An elusive phenomenon is observed in previous investigations on dynamic fracture that the dynamic fracture toughness （DFT） of high strength metals always increases with the loading rate on the order of TPa.m1/2.s-1. For the purpose of verification, variation of DFT with the loading rate for two high strength steels commonly used in the aviation industry, 30CrMnSiA and 40Cr, is studied in this work. Results of the experiments are compared, which were conducted on the modified split Hopkinson pressure bar （SHPB） apparatus, with striker velocities ranging from 9.2 to 24.1 m/s and a constant value of 16.3 m/s for 30CrMnSiA and 40Cr, respectively. It is observed that for 30CrMnSiA, the crack tip loading rate increases with the increase of the striker velocity, while the fracture initiation time and the DFT simultaneously decrease. However, in the tests of 40Cr, there is also an increasing tendency of DFT, similar to other reports. Through an in-depth investigation on the relationship between the dynamic stress intensity factor （DSIF） and the loading rate, it is concluded that the generally increasing tendency in previous studies could be false, which is induced from a limited striker velocity domain and the errors existing in the experimental and numerical processes. To disclose the real dependency of DFT on the loading rate, experimentsneed to be performed in a comparatively large striker velocity range.

Distribution and Migration of Heavy Metals in Undisturbed Forest Soils:A High Resolution Sampling Method

The vertical distribution and migration of Cu,Zn,Pb,and Cd in two forest soil profiles near an industrial emission source were investigated using a high resolution sampling method together with reference element Ti.One-meter soil profile was sectioned horizontally at 2 cm intervals in the first 40 cm,5 cm intervals in the next 40 cm,and 10 cm intervals in the last 20 cm.The migration distance and rate of heavy metals in the soil profiles were calculated according to their relative concentrations in the profiles,as calibrated by the reference element Ti.The enrichment of heavy metals appeared in the uppermost layer of the forest soil,and the soil heavy metal concentrations decreased down the profile until reaching their background values.The calculated average migration rates of Cd,Cu,Pb,and Zn were 0.70,0.33,0.37,and 0.76 cm year-1,respectively,which were comparable to other methods.A simulation model was proposed,which could well describe the distribution of Cu,Zn,Pb,and Cd in natural forest soils.

Characteristics of highly differentiated granite and metallization of tungsten-tin, rare and rare earth metal in the eastern Nanling region, China

1 Introduction Massive tungsten-tin,rare and rare earth metals ore deposits were formed with the widespread granite magmatic activity in early Yanshanian period in the eastern Nanling region.Recent studies indicate that the Yanshanian highly differentiated-granite formation is closely related to the deposits of tungsten and tin,rare and rare earth metals mineralization in the region(Xiao

Non-Isothermal Crystallization Kinetics of a Rapidly Solidified as-Cast TiZrHfNiCu High Entropy Bulk Metallic Glass

This paper aims to investigate the thermal behavior and crystallization kinetics of TiZrHfNiCu high entropy bulk metallic glass (HE-BMG) alloy using the standard procedure of Differential Scanning Calorimetric (DSC) annealing technique. The alloy was produced using an arc melting machine with a critical diameter of 1.5 mm. The crystallization kinetics and phase transformation mechanism of TiZrHfNiCu HE-BMG was investigated under the isochronal condition at a single heating run based on the Johnson-Mehl- Avrami (JMA) theory. In isochronal heating, the apparent activation energy for glass transition and crystallization events was analyzed by Kissinger and Ozawa methods. The average activation energy value for crystallization of TiZrHfNiCu amorphous alloys in isochronal modes was 226.41 kJ/mol for the first crystallization and 297.72 kJ/mol for second crystallization stages. The crystallization mechanism of the first step was dominated by two- and three-dimensional growth with increasing nucleation rate, while the crystallization mechanism in the second stage was dominated by two-dimensional crystallization growth with a constant nucleation rate. The diffusion mechanism result proved the theory of sluggish atomic diffusion of HEA at elevated temperature.

FABRICATION OF HIGH-MELTING POINT METAL COATING

ＦＡＢＲＩＣＡＴＩＯＮＯＦＨＩＧＨＭＥＬＴＩＮＧＰＯＩＮＴＭＥＴＡＬＣＯＡＴＩＮＧ①ＴａｎｇＢｉｎ，ＨｕＸｉｎｆａｎｇ，ＸｕＫｅｗｅｉＳｃｈｏｏｌｏｆＭａｔｅｒｉａｌｓＳｃｉｅｎｃｅａｎｄＥｎｇｉｎｅｒｉｎｇ，Ｘｉ′ａｎＪｉａｏｔｏｎｇＵｎｉｖｅｒ...

Mechanical properties and grain refinement by acicular ferrite in high strength high toughness weld metal

The volume fraction and morphology of acicular ferrite evolution in a high strength high toughness weld metal were studied and the mechanical properties of weld metal under heat input of 21 kJ/cm with and without fast cooling were tested. The results show the weld metal can obtain a large proportion of acicular ferrite during a wide range of cooling rate and the sizes of acicular ferrite in length and thickness decrease with cooling rate increasing. The weld metal exhibited high tensile strength （895 MPa and 870 MPa） and good low temperature toughness （average AKv-30℃ 104 J and 79. 2 J）. The higher tensile strength and better low temperature toughness of the weld metal under fast cooling are due to the more refined grain of acicular ferrite.

Flux-measuring approach of high temperature metal liquid based on BP neural networks

A soft-measuring approach is presented to measure the flux of liquid zinc with high temperature andcausticity. By constructing mathematical model based on neural networks, weighing the mass of liquid zinc, the fluxof liquid zinc is acquired indirectly, the measuring on line and flux control are realized. Simulation results and indus-trial practice demonstrate that the relative error between the estimated flux value and practical measured flux value islower than 1.5%, meeting the need of industrial process.

Investigation of passivation effects in AlGaN/GaN metal-insulator-semiconductor high electron-mobility transistor by gate-drain conductance dispersion study

This paper studies the drain current collapse of A1GaN/GaN metal insulator-semiconductor high electron-mobility transistors （MIS-HEMTs） with NbA10 dielectric by applying dual-pulsed stress to the gate and drain of the device. For NbA10 MIS-HEMT, smaller current collapse is found thorough study of the gate-drain conductance dispersion especially when the gate static voltage is -8 V. Through a it is found that the growth of NbA10 can reduce the trap density of the AlGaN surface. Therefore, fewer traps can be filled by gate electrons, and hence the depletion effect in the channel is suppressed effectively. It is proved that the NbAIO gate dielectric can not only decrease gate leakage current but also passivate the A1GaN surface effectively, and weaken the current collapse effect accordingly.

A High-Fe Aluminum Matrix Welding Filler Metal for Hardfacing Aluminum-Silicon Alloys

A high Fe containing aluminum matrix filler metal for hardfacing aluminum silicon alloys has been developed by using iron,nickel,and silicon as the major strengthening elements,and by measuring mechanical properties,room temperature and high temperature wear tests,and microstructural analysis.The filler metal,which contains 3.0%-5.0% Fe and 11.0%-13.0% Si,exhibits an excellent weldability.The as cast and as welded microstructures for the filler metal are of uniformly distribution and its dispersed network of hard phase is enriched with Al Si Fe Ni.The filler metal shows high mechanical properties and wear resistance at both room temperature and high temperatures.The deposited metal has a better resistance to impact wear at 220℃ than that of substrate Al Si Mg Cu piston alloy;at room temperature,the deposited metal has an equivalent resistance to slide wear with lubrication as that of a hyper eutectic aluminum silicon alloy with 27% Si and 1% Ni.

Crystallization behavior of Fe_(78)Si_(13)B_9 metallic glass under high magnetic field

The effects of high magnetic field on the crystallization behavior of the Fe78Si13B9 metallic glass ribbon were studied. The samples were isothermal annealed for 30 min under high magnetic field and no field,respectively. Microstructure transformation during crystallization was identified by X-ray diffraction and transmission electron microscopy. It was found that the crystallizations of Fe78Si13B9 metallic glass processed under different conditions were that the precipitation of dendrite α-Fe（Si） and spherulite （Fe,Si）3B phases forms amorphous matrix and then the metastable （Fe,Si）3B phase transforms into the stable Fe2B phase. The grain size of the crystals is smaller and more homogeneous for the isothermal annealed samples under high magnetic field in comparison with that under no field indicating that the crystallization behavior of Fe78Si13B9 metallic glass is suppressed by high magnetic field.

Best practices for making high integrity lightweight metal castings-molten metal composition and cleanliness control

To make high integrity lightweight metal castings,best practices are required in various stages of casting and heat treatment processes,including liquid metal composition and quality control,casting and gating/riser system design,and process optimization.This paper presents best practices for liquid metal processing and quality assurance of molten metal in both melting and mold filling.Best practices for other aspects of lightweight metal casting will be published separately.

Statistical model for combustion of high-metal magnesium-based hydro-reactive fuel

We investigate experimentally and analytically the combustion behavior of a high-metal magnesium-based hydro- reactive fuel under high temperature gaseous atmosphere. The fuel studied in this paper contains 73% magnesium powders. An experimental system is designed and experiments are carried out in both argon and water vapor atmo- spheres. It is found that the burning surface temperature of the fuel is higher in water vapor than that in argon and both of them are higher than the melting point of magnesium, which indicates the molten state of magnesium particles in the burning surface of the fuel. Based on physical considerations and experimental results, a mathematical one-dimensional model is formulated to describe the combustion behavior of the high-metal magnesium-based hydro-reactive fuel. The model enables the evaluation of the burning surface temperature, the burning rate and the flame standoff distance each as a function of chamber pressure and water vapor concentration. The results predicted by the model show that the burning rate and the surface temperature increase when the chamber pressure and the water vapor concentration increase, which are in agreement with the observed experimental trends.

Challenges in Atomic-Scale Characterization of High-k Dielectrics and Metal Gate Electrodes for Advanced CMOS Gate Stacks

The decreasing feature sizes in complementary metal-oxide semiconductor （CMOS） transistor technology will require the replacement of SiO2 with gate dielectrics that have a high dielectric constant （high-k） because as the SiO2 gate thickness is reduced below 1.4 nm, electron tunnelling effects and high leakage currents occur in SiO2, which present serious obstacles to future device reliability. In recent years significant progress has been made on the screening and selection of high-k gate dielectrics, understanding their physical properties, and their integration into CMOS technology. Now the family of hafnium oxide-based materials has emerged as the leading candidate for high-k gate dielectrics due to their excellent physical properties. It is also realized that the high-k oxides must be implemented in conjunction with metal gate electrodes to get sufficient potential for CMOS continue scaling. In the advanced nanoscale Si-based CMOS devices, the composition and thickness of interfacial layers in the gate stacks determine the critical performance of devices. Therefore, detailed atomic- scale understandings of the microstructures and interfacial structures built in the advanced CMOS gate stacks, are highly required. In this paper, several high-resolution electron, ion, and photon-based techniques currently used to characterize the high-k gate dielectrics and interfaces at atomic-scale, are reviewed. Particularly, we critically review the research progress on the characterization of interface behavior and structural evolution in the high-k gate dielectrics by high-resolution transmission electron microscopy （HRTEM） and the related techniques based on scanning transmission electron microscopy （STEM）, including high-angle annular dark- field （HAADF） imaging （also known as Z-contrast imaging）, electron energy-loss spectroscopy （EELS）, and energy dispersive X-ray spectroscopy （EDS）, due to that HRTEM and STEM have become essential metrology tools for characterizing the dielectric gate stacks in the present and future generations of CMOS devices. In Section 1 of this review, the working principles of each technique are briefly introduced and their key features are outlined. In Section 2, microstructural characterizations of high-k gate dielectrics at atomic-scale by electron microscopy are critically reviewed by citing some recent results reported on high-k gate dielectrics. In Section 3, metal gate electrodes and the interfacial structures between high-k dielectrics and metal gates are discussed. The electron beam damage effects in high-k gate stacks are also evaluated, and their origins and prevention are described in Section 4. Finally, we end this review with personal perspectives towards the future challenges of atomic-scale material characterization in advanced CMOS gate stacks.

Motion behavior of non-metallic particles under high frequency magnetic field

Non-metallic particles, especially alumina, are the main inclusions in aluminum and its alloys. Numerical simulation and the corresponding experiments were carried out to study the motion behavior of alumina particles in commercial pure aluminum under high frequency magnetic field. At the meantime, multi-pipe experiment was also done to discuss the prospect of continuous elimination of non-metallic particles under high frequency magnetic field. It is shown that: 1) results of numerical simulation are in good agreement with the experimental results, which certificates the rationality of the simulation model; 2) when the intensity of high frequency magnetic field is 0.06 T, the 30 μm alumina particles in melt inner could migrate to the edge and be removed within 2 s; 3) multi-pipe elimination of alumina particles under high frequency magnetic field is also effective and has a good prospect in industrial application.

Transforming a Two-Dimensional Layered Insulator into a Semiconductor or a Highly Conductive Metal through Transition Metal Ion Intercalation

Atomically thin two-dimensional(2D) materials are the building bricks for next-generation electronics and optoelectronics, which demand plentiful functional properties in mechanics, transport, magnetism and photoresponse.For electronic devices, not only metals and high-performance semiconductors but also insulators and dielectric materials are highly desirable. Layered structures composed of 2D materials of different properties can be delicately designed as various useful heterojunction or homojunction devices, in which the designs on the same material(namely homojunction) are of special interest because preparation techniques can be greatly simplified and atomically seamless interfaces can be achieved. We demonstrate that the insulating pristine ZnPS_3, a ternary transition-metal phosphorus trichalcogenide, can be transformed into a highly conductive metal and an n-type semiconductor by intercalating Co and Cu atoms, respectively. The field-effect-transistor(FET) devices are prepared via an ultraviolet exposure lithography technique. The Co-ZnPS_3 device exhibits an electrical conductivity of 8 × 10^(4) S/m, which is comparable to the conductivity of graphene. The Cu-ZnPS_3 FET reveals a current ON/OFF ratio of 1-05 and a mobility of 3 × 10^(-2 )cm^(2)·V^(-1)·s^(-1). The realization of an insulator, a typical semiconductor and a metallic state in the same 2D material provides an opportunity to fabricate n-metal homojunctions and other in-plane electronic functional devices.

Key technologies for dual high-k and dual metal gate integration

The key technologies for the dual high-k and dual metal gate, such as the electrical optimization of metal insert poly-Si stack structure, the separating of high-k and metal gate of n/pMOS in different regions of the wafer, and the synchronous etching of n/pMOS gate stack, are successfully developed. First, reasonable flat-band voltage and equivalent oxide thickness of pMOS MIPS structure are obtained by further optimizing the HfSiAlON dielectric through incorporating more Al-O dipole at interface between HfSiAlON and bottom SiOx. Then, the separating of high-k and metal gate for n/pMOS is achieved by SC1（NH4OH：H2O2：H2O = 1 ： 1 ： 5） and DHF-based solution for the selective removing of n MOS TaN and Hf Si ON and by BCl3-based plasma and DHF-based solution for the selective removing of pMOS TaN/Mo and HfSiAlON.After that, the synchronous etching of n/pMOS gate stack is developed by utilizing optimized BCl3/SF6/O2/Ar plasma to obtain a vertical profile for TaN and TaN/Mo and by utilizing BCl3/Ar plasma combined with DHF-based solution to achieve high selectivity to Si substrate. Finally, good electrical characteristics of CMOS devices, obtained by utilizing these new developed technologies, further confirm that they are practicable technologies for DHDMG integration.

Preparation and Electrochemical Performances of Nickel Metal Hydride Batteries with High Specific Volume Capacity

有高特定的体积能力的圆柱的镍金属氢化物(Ni-MH ) 电池被使用 oxyhydroxide Ni 准备(哦) 2 并且 AB5 类型氢存储合金并且调整积极、否定的电极的设计参数。oxyhydroxide Ni (哦) 2 被氧化综合有化学方法的球形的 -Ni(OH)2。X 光检查衍射(XRD ) 模式和 Fourier 转变红外线(英尺红外) 系列显示 -NiOOH 在 oxyhydroxide Ni 上被形成(哦) 2 粉末，和一些 H2O 分子被插入到他们的晶体格子间距。当时，电池能力不能被改进 oxyhydroxide Ni (哦) 2 样品直接被用作积极活跃材料。然而，基于传导力和 oxyhydroxide Ni 的剩余能力(哦) 2 搽粉，与 2560 妈一起的 AA 尺寸 Ni-MH 电池？