We report an AlGaN channel high electron mobility transistor （HEMT） on a sapphire substrate with a 1000-nm A1xGa1-xN （x = 0-0.18）/GaN composite buffer layer, With a significant improvement of crystal quality, the ...We report an AlGaN channel high electron mobility transistor （HEMT） on a sapphire substrate with a 1000-nm A1xGa1-xN （x = 0-0.18）/GaN composite buffer layer, With a significant improvement of crystal quality, the device features a high product orris. #n. The AIGaN channel HEMTs presented show improved performance with respect to the conventional AIGaN channel HEMTs, including the on-resistance reduced from 31.2 to 8.1 Ω.mm, saturation drain current at 2 V gate bias promoted from 218 to 540 mA/mm, peak transconductance at 10 V drain bias promoted from 100 to a state-of-the-art value of 174 mS/ram, and reverse gate leakage current reduced from 1.85 × 10-3 to 2.15 × 10-5 mA/mm at VOD = -20 V.展开更多
On the basis of thermodynamic and kinetic consideration of Ge-O system,high-pressure oxidation(HPO)on Ge was proposed to suppress the GeO desorption during the thermal oxidation and significant improvements of Ge/GeO2...On the basis of thermodynamic and kinetic consideration of Ge-O system,high-pressure oxidation(HPO)on Ge was proposed to suppress the GeO desorption during the thermal oxidation and significant improvements of Ge/GeO2-based gate stacks have been achieved.It is found that the post oxidation annealing at lower temperatures is helpful to passivate the interface defects at the Ge/GeO2 stack generated by the conventional thermal oxidation,while the high-quality GeO2 bulk properties can only be achieved by HPO that grows GeO2 film at high temperatures without the GeO desorption.This paper reviews the advantage of HPO on the formation of Ge/GeO2 stacks in terms of Ge/GeO2 interface and GeO2 bulk properties.展开更多
基金Supported by the National Science and Technology Major Project of China under Grant No 2013ZX02308-002National Natural Science Foundation of China under Grant Nos 11435010 and 61474086
文摘We report an AlGaN channel high electron mobility transistor （HEMT） on a sapphire substrate with a 1000-nm A1xGa1-xN （x = 0-0.18）/GaN composite buffer layer, With a significant improvement of crystal quality, the device features a high product orris. #n. The AIGaN channel HEMTs presented show improved performance with respect to the conventional AIGaN channel HEMTs, including the on-resistance reduced from 31.2 to 8.1 Ω.mm, saturation drain current at 2 V gate bias promoted from 218 to 540 mA/mm, peak transconductance at 10 V drain bias promoted from 100 to a state-of-the-art value of 174 mS/ram, and reverse gate leakage current reduced from 1.85 × 10-3 to 2.15 × 10-5 mA/mm at VOD = -20 V.
基金The author would like to thank Prof.Akira Toriumi,Prof.Kita Koji,Prof.Kosuke Nagashio,and Dr.Tomonori Nishimura at the University of Tokyo for their continuous support and encouragement,which induced the main results reviewed in this paper.
文摘On the basis of thermodynamic and kinetic consideration of Ge-O system,high-pressure oxidation(HPO)on Ge was proposed to suppress the GeO desorption during the thermal oxidation and significant improvements of Ge/GeO2-based gate stacks have been achieved.It is found that the post oxidation annealing at lower temperatures is helpful to passivate the interface defects at the Ge/GeO2 stack generated by the conventional thermal oxidation,while the high-quality GeO2 bulk properties can only be achieved by HPO that grows GeO2 film at high temperatures without the GeO desorption.This paper reviews the advantage of HPO on the formation of Ge/GeO2 stacks in terms of Ge/GeO2 interface and GeO2 bulk properties.
