Fabrication of Tm-Doped Fibers for High Power and 121W Output All-Fiber Tm-Doped Fiber Laser

We fabricate the Tm-doped double cladding silica fiber by using the vapor-solution hybrid-doping method, then build up an all-fiber Tin-doped fiber laser which can provide the output power of up to 121 W, corresponding to a slope efficiency of 51% and an optical-optical efficiency of 48%. By using the domestic Tin-doped fiber, it is the first time a hundred-watt level output at 1915nm has been achieved, to the best of our knowledge. The thermal effect of Tm-doped fiber laser is also analyzed.

Research on the Effect of High Power Microwave on Low Noise Amplifier and Limiter Based on the Injection Method

The reliability of electronic device is threatened in high power microwave (HPM) environment. In accordance with the situation that the emulation is ineffective in evaluating the accuracy and precision of the HPM effect to electronic device, the experimental method is used to resolve the problem. Low Noise Amplifier (LNA) and Limiter are selected as the objects for the experiments, the structural characteristic of the front-end of radar receiver is described, the phenomena and criterion are elaborated and analyzed using injection method due to its ability to get an accurate threshold avoiding the complex coupling, the basic principle of injection experiment is demonstrated, and the method and process of effect experiment about Low Noise Amplifier and Limiter are also explained. The experimental system is established, and the system is composed of low power microwave source such as TWT, test equipment for obtaining the effect parameters, and some of auxiliary equipments as camera, optical microscope or electron microscopy, attenuator, detector, and directional coupler etc. The microwave delivered from source is adjusted to the power infused by attenuator, and pour in the decanting point of effecter via directional coupler, then the couple signal created by directional coupler is input to the recording instrument after detecting by detector, finally the power of effecter is obtained. The value of power, which damages the effecter in the microwave pulse environment, is classified at the index of sensitivity, and the threshold is obtained by power diagnose and wave test. Some regular understandings of the HPM effect to electronic device are obtained based on the results of the experiments. It turns out that the index of electronic device is influenced significantly by the energy via front door coupling, the MOSFET made up of GaAs is the most wearing part to HPM in LNA, the damage threshold of LNA is about 40dBm under single pulse while in repetitive pulse the value is from 33.3dBm to 43.9dBm according to different wave band. The damage threshold of Limiter is about 56dBm to80dBm.

A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT

A C-band high efficiency and high gain two-stage power amplifier based on A1GaN/GaN high electron mobility transistor （HEMT） is designed and measured in this paper. The input and output impedances for the optimum power-added efficiency （PAE） are determined at the fundamental and 2nd harmonic frequency （f0 and 2f0）. The harmonic manipulation networks are designed both in the driver stage and the power stage which manipulate the second harmonic to a very low level within the operating frequency band. Then the inter-stage matching network and the output power combining network are calculated to achieve a low insertion loss. So the PAE and the power gain is greatly improved. In an operation frequency range of 5,4 GHz-5.8 GHz in CW mode, the amplifier delivers a maximum output power of 18.62 W, with a PAE of 55.15 % and an associated power gain of 28.7 dB, which is an outstanding performance.

Analysis of Drain Modulation for High Voltage GaN Power Amplifier Considering Parasitics

For high-voltage and high-power Gallium Nitride(GaN)power amplifiers,a drain modulation circuit with rapid rise and fall time is proposed in this paper.To decrease the rise and fall time,the high-side bootstrap drive circuit with an auxiliary discharge switch is proposed.The effect of the parasitics is analyzed based on calculation and the parallel bonding is proposed.The storage capacitance of power supply is calculated quantitatively to provide large pulse current.To ensure safe operation of the power amplifier,the circuit topology with the dead-time control and sequential control is proposed.Finally,a prototype is built to verify the drain modulation circuit design.The experiments prove that the rise time and fall time of the output pulse signal are both less than 100 ns.

High-efficiency S-band harmonic tuning GaN amplifier

In this paper, we present a high-efficiency S-band gallium nitride （GaN） power amplifier （PA）. This amplifier is fabri- cated based on a self-developed GaN high-electron-mobility transistor （HEMT） with 10 mm gate width on SiC substrate. Harmonic manipulation circuits are presented in the amplifier. The matching networks consist of microstrip lines and discrete components. Open-circuited stub lines in both input and output are used to tune the 2rid harmonic wave and match the GaN HEMT to the highest efficiency condition. The developed amplifier delivers an output power of 48.5 dBm （70 W） with a power-added efficiency （PAE） of 72.2% at 2 GHz in pulse condition. When operating at 1.8-2.2 GHz （20% relative bandwidth）, the amplifier provides an output power higher than 48 dBm （,-~ 65 W）, with a PAE over 70% and a power gain above 15 dB. When operating in continuous-wave （CW） operating conditions, the amplifier gives an output power over 46 dBm （40 W） with PAE beyond 60% over the whole operation frequency range.

A 600W Broadband Doherty Power Amplifier with Improved Linearity for Wireless Communication System

An asymmetric Doherty architecture based on three identical transistors is proposed in this paper. This proposed three.way topology reduces the difficulty in designing matching networks brought by the low optimal impedance of high power transistors. And the inverted Doherty topology as well as carefully chosen value of load impedance makes it possible to extend the bandwidth of high power amplifiers. Besides, bias networks of this proposed three.way architecture are also carefully considered to improve the linearity. The proposed high power three.way Doherty power amplifier(3W.DPA) is designed and fabricated based on theoretic analysis. Its maximum output power is about 600 Watts and the drain efficiency is above 35.5% at 9d B back off output power level from 1.9GHz to 2.2 GHz and the saturated drain efficiency is above 47% across the whole frequency band. The measured concurrent two.tone results suggest that the linearity of DPA is improved by at least 5d B.

Design of 35 GHz 1 Watt GaAs pHEMT Power Amplifier MMIC

By using 0.15 μm GaAs pHEMT （pseudomorphic high electron mobility transistor） technology,a design of millimeter wave power amplifier microwave monolithic integrated circuit （MMIC） is presented.With careful optimization on circuit structure,this two-stage power amplifier achieves a simulated gain of 15.5 dB with fluctuation of 1 dB from 33 GHz to 37 GHz.A simulated output power of more than 30 dBm in saturation can be drawn from 3 W DC supply with maximum power added efficiency （PAE） of 26%.Rigorous electromagnetic simulation is performed to make sure the simulation results are credible.The whole chip area is 3.99 mm2 including all bond pads.

Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave

In this paper, we present the damage effect and mechanism of high power microwave （HPM） on AIGaAs/GaAs pseudomorphic high-electron-mobility transistor （pHEMT） of low-noise amplifier （LNA）. A detailed investigation is carried out by simulation and experiment study. A two-dimensional electro-thermal model of the typical GaAs pHEMT induced by HPM is established in this paper. The simulation result reveals that avalanche breakdown, intrinsic excitation, and thermal breakdown all contribute to damage process. Heat accumulation occurs during the positive half cycle and the cylinder under the gate near the source side is most susceptible to burn-out. Experiment is carried out by injecting high power microwave into GaAs pHEMT LNA samples. It is found that the damage to LNA is because of the burn-out at first stage pHEMT. The interiors of the damaged samples are observed by scanning electron microscopy （SEM） and energy dispersive spectrometer （EDS）. Experimental results accord well with the simulation of our model.

High-repetition-rate and high-power efficient picosecond thin-disk regenerative amplifier

We present an effective approach to realize a highly efficient,high-power and chirped pulse amplification-free ultrafast ytterbium-doped yttrium aluminum garnet thin-disk regenerative amplifier pumped by a zero-phonon line 969 nm laser diode.The amplifier delivers an output power exceeding 154 W at a pulse repetition rate of 1 MHz with custom-designed 48 pump passes.The exceptional thermal management on the thin disk through high-quality bonding,efficient heat dissipation and a fully locked spectrum collectively contributes to achieving a remarkable optical-to-optical efficiency of 61%and a near-diffraction-limit beam quality with an M2 factor of 1.06.To the best of our knowledge,this represents the highest conversion efficiency reported in ultrafast thin-disk regenerative amplifiers.Furthermore,the amplifier operates at room temperature and exhibits exceptional stability,with root mean square stability of less than 0.33%.This study significantly represents advances in the field of laser amplification systems,particularly in terms of efficiency and average power.This advantageous combination of high efficiency and diffraction limitation positions the thin-disk regenerative amplifier as a promising solution for a wide range of scientific and industrial applications.

Evolution of modes in double-clad Raman fiber amplifier

Stimulated Raman scattering in a double cladding optical fiber is studied with a continuous wave laser used as a pump source. Under various launch conditions, pump modes are differently excited. Considering the mode coupling effect among the pump modes, the evolution of the power in the Stokes modes is studied. The results show that the scattered waves （the Stokes waves） in the fiber core with 9%tm diameter and 0.14 NA could propagate predominantly in the fundamental mode of the fiber by carefully adjusting the pump light launching conditions.

All-fiber,high power single-frequency linearly polarized ytterbium-doped fiber amplifier

We report an all-fiber high power,single frequency large-mode area （LMA） linearly polarized ytterbiumdoped fiber amplifiers （YDFA） module,which is based on the master oscillator multi-stage power amplifiers （MOPA）.The maximum output power is 43.8 W at a wavelength of 1064 nm when 60-W launched pump light is coupled,with high slope efficiency of 88%,polarization extinction rate （PER） 17.2 dB and nearly diffraction-limited beam quality （M 2 1.1）.

Powerful 2 μm Silica Fiber Sources: A Review of Recent Progress and Prospects

A review on the progress of powerful 2 μm silica fiber sources in past decades is presented. We review the state-of-the-art records and representative achievements of 2 μm high-average-power continuous- wave, pulsed fiber lasers and amplifiers, and powerful superfluorescent sources. Challenges which limit the further power scaling of 2 μm silica fiber sources are discussed, including pumping brightness limitation, thermal problem and nonlinear effects. Potential and promising roadmaps to go beyond these limitations, like tandem pumping and beam combining, are discussed. Prospects of powerful 2 μm silica fiber sources are also presented in the end of paper.

A high-linearity InGaP/GaAs HBT power amplifier for IEEE 802.11a/n

A three-stage 4.8-6 GHz monolithic power amplifier（PA） compatible with IEEE 802.11a/n designed based on an advanced 2μm InGaP/GaAs hetero-junction bipolar transistor（HBT） process is presented.The PA integrates input matching and closed-loop power control circuits on chip.Under 3.3 V DC bias,the amplifier achieves a ~31 dB small signal gain,excellent wide band input and output matching among overall 1.2 GHz bandwidth,and up to 24.5 dBm linear output power below EVM 3%with IEEE 802.11a 64QAM OFDM input signal.

A 1.8–3 GHz-band high efficiency GaAs pHEMT power amplifier MMIC

This paper describes an S-band wideband high efficiency power amplifier based on the Nanjing Electron Device Institute＇s Ga As p HEMT monolithic microwave integrated circuit（MMIC） technology. To realize high efficiency, the two stage power amplifier is designed with a driver ratio of 1 ： 8. The low-pass filter/high-pass filter combined matching circuit is applied to the amplifier to reduce the chip size, as well as to realize the optimum impedances over a wide bandwidth for high efficiency at each stage. Biased at class AB under a drain supply voltage of 5 V, the amplifier delivers 33–34 dBm saturated output power across the frequency range of 1.8 to 3GHz with associated power-added efficiency of 35%–45% and very flat power gain of 25–26 dB in CW mode. The size of this MMIC is very compact with 2.72.75 mm^2.

Design of High-Efficiency broadband power amplifier using low-pass bias network

A novel design of high-efficiency broadband power amplifier （BPA） with the low-pass bias networkto enhance the efficiency and output power is presented in this paper. Compared with other bias networks, the proposed low-pass bias network shows a smaller baseband impedance, which can reduce the electrical memory effect. While it provides a larger radio frequency （RF） impedance, which can prevent the leakage of the output power from bias network. A BPA with the proposed bias network is designed using commercial GaN device Cree40025F. The designed BPA shows a fractional bandwidth of 40%, from 1.8 GHz to 2.7 GHz. The measured results exhibit 73.9 % drain efficiency （DE） value with output power of 43.5 dBm at 2.7 GHz, which appears an enhancement of 9.5% and 2.5 dBm comparing with that adopts LC bias network.

Mode control in a high gain relativistic klystron amplifier with3 GW output power

Higher mode excitation is very serious in the relativistic klystron amplifier, especially for the high gain relativistic amplifier working at tens of kilo-amperes. The mechanism of higher mode excitation is explored in the FIC simulation and it is shown that insufficient separation of adjacent cavities is the main cause of higher mode excitation. So RF lossy material mounted on the drift tube wall is adopted to suppress higher mode excitation. A high gain S-band relativistic klystron amplifier is designed for the beam current of 13 kA and the voltage of 1 MV. PIC simulation shows that the output power is 3.2 GW when the input power is only 2.8 kW.

Multi-mode multi-band power amplifier module with high low-power efficiency

Increasingly, mobile communications standards require high power efficiency and low currents in the low power mode. This paper proposes a fully-integrated multi-mode and multi-band power amplifier module （PAM） to meet these requirements. A dual-path PAM is designed for high-power mode （HPM）, medium-power mode （MPM）, and low-power mode （LPM） operations without any series switches for different mode selection. Good performance and significant current saving can be achieved by using an optimized load impedance design for each power mode. The PAM is tapeout with the InGaP/GaAs heterojunction bipolar transistor （HBT） process and the 0.18-μm complementary metal-oxide semiconductor （CMOS） process. The test results show that the PAM achieves a very low quiescent current of 3 mA in LPM. Meanwhile, across the 1.7-2.0 GHz frequency, the PAM performs well. In HPM, the output power is 28 dBm with at least 39.4% PAE and 240 dBc adjacent channel leakage ratio 1 （ACLR1）. In MPM, the output power is 17 dBm, with at least 21.3% PAE and -43 dBc ACLR1. In LPM, the output power is 8 dBm, with at least 18.2% PAE and -40 dBc ACLR1.

A broadband high-efficiency Doherty power amplifier using symmetrical devices

This paper proposes a method for broadband and high-efficiency amplification of Doherty power amplifier （DPA） using symmetric devices. In order to achieve the perfect load modulation, the carrier amplifier output circuit total power length is designed to odd multiple of 90°, and the peak amplifier output total power length is designed to even multiple of 180°. The proposed method is demonstrated by designing a broadband high-efficiency DPA using identical 10-W packaged GaN HEMT devices. Measurement results show that over 51% drain effi- ciency is achieved at 6-dB back-off power, over the frequency band of 1.9-2.4 GHz.

A High Power Conversion Efficiency L-Band Erbium Doped Fiber Amplifier

By using two sections of erbium doped fiber and a fiber optical reflector, a novel, highly efficient L-band amplifier is demonstrated with significantly power-conversion-efficiency enhancement and the gain increasing of as much as 13 dB.

Design and Analysis of 120-μm Core Rod-Type Photonic Crystal Fiber for High Power 1.5-μm Band Amplifier

We report the design and analysis of a rod-type photonic crystal fiber with Er-Yb co-doped for the high power 1.5-μm band amplifier.The fiber structure is designed to be the 120-μm extreme large core diameter,300-μm inner cladding diameter,and 1.5-mm outer cladding diameter that ensure the single mode output during high power amplification.Both the continuous wave(CW) and pulsed amplification characteristics are analyzed based on the exact modeling and simulation under the designed geometry.The 4-mJ pulse energy and 400-kW peak power are obtained in theory,so the 1.5-μm band amplifier that achieves milojoule level pulse energy meanwhile keeping single mode is firstly designed.